a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv ceo i c = 5.0 ma 30 v bv ces i c = 5.0 ma 55 v bv ebo i e = 5.0 ma 4.0 v i cbo v cb = 30 v 500 a h fe v ce = 5.0 v i c = 100 ma 10 100 --- c ob v cb = 30 v f = 1.0 mhz 2.0 pf p g c v cc = 24 v p out = 2.0 v f = 900 mhz 9.0 55 db % npn silicon rf power transistor mrf890 description: the asi mrf890 is designed for uhf class a amplifier applications in cellular base station equipment. features: ? pg = 9.0 db min. @ 900 mhz ? p 1db = 2.0 watts min. at 900 mhz ? omnigold ? metalization system maximum ratings i c 0.5 a v cbo 55 v v cer 30 v v ebo 4.0 v p diss 7.0 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +150 c jc 25 c/w package style .205 4l stud 1 = collector 2 = emitter 3 = base a b h e f .098 / 2.500 .161 / 4.100 .028 / 0.700 .976 / 24.800 .138 / 3.500 .976 / 24.800 inches / mm minimum a g f e d c b 1.000 / 25.4000 .110 / 2.800 .196 / 5.000 1.000 / 25.4000 maximum inches / mm .031 / 0.800 c d h i j .200 / 5.100 .425 / 10.800 .004 / 0.100 .006 / 0.150 .465 / 11.800 2.05 / 5.200 g j #8-32unc .200 / 5.100 .208 / 5.300 dim e 2 3 1
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