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savantic semiconductor product specification silicon npn power transistors 2SC4370 d escription with to-220f package complement to type 2sa1659 high transition frequency applications high voltage applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 160 v v ebo emitter-base voltage open collector 5 v i c collector current 1.5 a i b base current 0.15 a p c collector dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4370 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 160 v v cesat collector-emitter saturation voltage i c =0.5a; i b =50ma 1.5 v v be base-emitter on voltage i c =0.5a;v ce =5v 1.0 v i cbo collector cut-off current v cb =160v; i e =0 1.0 a i ebo emitter cut-off current v eb =5v; i c =0 1.0 a h fe dc current gain i c =0.1a ; v ce =5v 70 240 f t transition frequency i c =0.1a ; v ce =10v 100 mhz c ob collector output capacitance f=1mhz;v cb =10v 25 pf h fe classifications o y 70-140 120-240
savantic semiconductor product specification 3 silicon npn power transistors 2SC4370 package outline fig.2 outline dimensions (unindicated tolerance:0.10mm)

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