sfh1617a document number 83552 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 1 2 4 3 e c a c 17907 pb p b -free e3 optocoupler, high reliability, 5300 v rms , 110 c rated features ? operating temperature from - 55 c to + 110 c good ctr linearity depending on forward current isolation test voltage, 5300 v rms high collector-emitter voltage, v ceo = 70 v low saturation voltage fast switching times low ctr degradation temperature stable low coupling capacitance end-stackable, .100 " (2.54 mm) spacing high common-mode interference immunity lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection csa 93751 din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 applications ac adapter smps plc factory automation game consoles description the 110 c rated sfh1617a (dip) feature a high cur- rent transfer ratio, low coupling capacitance and high isolation voltage. these couplers have a gaas infra- red diode emitter, which is optically coupled to a sili- con planar phototransistor detector, and is incorporated in a plastic dip-4 package. the coupling devices are designed for signal trans- mission between two electric ally separated circuits. the couplers are end-stackable with 2.54 mm spac- ing. creepage and clearance distances of > 8.0 mm are achieved with option 6. this version complies with iec 60950 (din vde 0805) for reinforced insulation up to an operation voltage of 400 v rms or dc. spec- ifications subject to change. order information for additional information on t he available options refer to option information. part remarks sfh1617a-1 ctr 40 - 80 %, dip-4 sfh1617a-2 ctr 63 - 125 %, dip-4 SFH1617A-3 ctr 100 - 200 %, dip-4 sfh1617a-4 ctr 160 - 320 %, dip-4
www.vishay.com 2 document number 83552 rev. 1.4, 26-oct-04 sfh1617a vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit reverse voltage v r 6.0 v dc forward current i f 60 ma surge forward current t 10 si fsm 2.5 a power dissipation p diss 100 mw derate linearly from 25 c 0.95 mw/c parameter test condition symbol value unit collector-emitter voltage v ce 70 v emitter-collector voltage v ec 7.0 v collector current i c 50 ma t 1.0 ms i c 100 ma power dissipation p diss 150 mw derate linearly from 25 c 1.54 mw/c parameter test condition symbol value unit isolation test voltage between emitter and detector, refer to climate din 40046, part 2, nov. 74 v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm insulation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vdeo 303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 110 c soldering temperature max. 10 s. dip soldering distance to seating plane 1.5 mm t sld 260 c
sfh1617a document number 83552 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input (ir gaas) output (si phototransistor) coupler current transfer ratio parameter test condition symbol min ty p. max unit forward voltage i f = 60 ma v f 1.25 1.65 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 13 pf parameter test condition part symbol min ty p. max unit collector-emitter capacitance v ce = 5 v, f = 1.0 mhz c ce 5.2 pf collector-emitter leakage current v ce = 10 v sfh1617a-1 i ceo 2.0 50 na sfh1617a-2 i ceo 2.0 50 na SFH1617A-3 i ceo 5.0 100 na sfh1617a-4 i ceo 5.0 100 na parameter test condition symbol min ty p. max unit collector-emitter saturation voltage i f = 10 ma, f = 1.0 mhz v cesat 0.4 0.25 v coupling capacitance c c 0.4 pf parameter test condition part symbol min ty p. max unit i c /i f i f = 10 ma, v ce = 5.0 v sfh1617a-1 ctr 40 80 % sfh1617a-2 ctr 63 125 % SFH1617A-3 ctr 100 200 % sfh1617a-4 ctr 160 320 % i f = 1.0 ma, v ce = 5.0 v sfh1617a-1 ctr 13 30 % sfh1617a-2 ctr 22 45 % SFH1617A-3 ctr 34 70 % sfh1617a-4 ctr 56 90 %
www.vishay.com 4 document number 83552 rev. 1.4, 26-oct-04 sfh1617a vishay semiconductors switching characteristics without saturation with saturation typical characteri stics (tamb = 25 c unless otherwise specified) parameter te s t c o n d i t i o n symbol min ty p. max unit turn-on time i f = 10 ma, v cc = 5.0 v, r l = 75 ? t on 3.0 s rise time i f = 10 ma, v cc = 5.0 v, r l = 75 ? t r 2.0 s turn-off time i f = 10 ma, v cc = 5.0 v, r l = 75 ? t off 2.3 s fall time i f = 10 ma, v cc = 5.0 v, r l = 75 ? t f 2.0 s cut-off frequency i f = 10 ma, v cc = 5.0 v, f ctr 250 khz parameter te s t c o n d i t i o n part symbol min ty p. max unit turn-on time i f = 20 ma sfh1617a-1 t on 3.0 s i f = 10 ma sfh1617a-2 t on 4.2 s SFH1617A-3 t on 4.2 s i f = 5.0 ma sfh1617a-4 t on 6.0 s rise time i f = 20 ma sfh1617a-1 t r 2.0 s i f = 10 ma sfh1617a-2 t r 3.0 s SFH1617A-3 t r 3.0 s i f = 5.0 ma sfh1617a-4 t r 4.6 s turn-off time i f = 20 ma sfh1617a-1 t off 18 s i f = 10 ma sfh1617a-2 t off 23 s SFH1617A-3 t off 23 s i f = 5.0 ma sfh1617a-4 t off 25 s fall time i f = 20 ma sfh1617a-1 t f 11 s i f = 10 ma sfh1617a-2 t f 14 s SFH1617A-3 t f 14 s i f = 5.0 ma sfh1617a-4 t f 15 s figure 1. permissible power diss ipation vs. ambient temperature 0 50 100 150 200 0 20406080100120 18778 p Cpower dissipation (mw) tot detector led t amb C ambient temperature ( q c ) figure 2. forward voltag e s. forward current 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.10 1.00 10.00 100.00 i f C forward current ( ma ) 17592 v C forward voltage ( v ) f 110 q c 0 q c 50 q c 25 q c C55 q c
sfh1617a document number 83552 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 3. collector current vs . collector emitter voltage figure 4. collector to emitter dark current vs. ambient temperature figure 5. normalized current vs. collector emitter saturation voltage 0 5 10 15 20 25 30 35 40 45 50 0123456789101112131415 v C collector emitter voltage (v) 18733 i C collector current (ma) c ce i = 30 ma i =1ma i=5ma i = 10 ma i=15ma i = 20 ma f f f f f f 0.10 1 10 100 1000 10000 C75 C25 25 75 125 t C ambient temperature ( c ) 18734 ce0 i(na) amb 40 v 12 v 24 v 0 10 20 30 0.0 0.1 0.2 0.3 0.4 0.5 0.6 v C collector to emitter voltage (v) 18735 i (ma) 25 ma 10 ma 5ma 1ma 2ma c ce figure 6.ormaliecurrent traneratio.ambient temperature figure 7.ormaliect.temperature figure 8.ormaliect .forarcurrent 0.0 0.2 0.4 0.6 0.8 1.0 1.2 C55 C35 C15 5 25 45 65 85 105 125 t amb C ambient temperature ( q c ) 17593 ctr C normalized output current normalized to i f = 10 ma, t amb = 25 c, v ce = 0.4 v, saturated norm i f = 5 ma 10 ma 1 ma 0.00 0.20 0.40 0.60 0.80 1.00 1.20 C55 C35 C15 5 25 45 65 85 105 125 t C ambient temperature (c) 18737 ctr C normalized output current 10 ma 5ma 1ma normalized to temp=25c@ i = 10 ma and v =5v norm amb f ce 1.10 0.90 0.70 0.50 0.30 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.10 1.00 10.00 100.00 i f C forward current ( ma ) 17594 ctr C normalized output current norm normalized to i f = 10 ma, t amb = 25 c, v ce = 5 v, nonCsaturated C4 C1 C3 C2
www.vishay.com 6 document number 83552 rev. 1.4, 26-oct-04 sfh1617a vishay semiconductors figure 9. normalized ctr vs. forward current figure 10. forward resistance vs. forward current figure 11. forward resistance vs. forward current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.10 1.00 10.00 100.00 i f C forward current ( ma ) 17595 C4 C1 C3 C2 ctr C normalized output current norm normalized to i f = 10 ma, t amb = 25 c, v ce = 0.4 v, saturated 1 10 100 1000 0.1 1.0 10.0 100.0 r C load resistance (k ? ) 18340 switching time ( s) toff ton pulse width = 100 ms i = 10 ma duty cycle = 50 % l f 1 10 100 1000 0.1 1 10 100 r C load resistance (k ? ) 18341 switching time (ms) t t pulse width = 100 ms i = 10 ma duty cycle = 50 % l f rise fall
sfh1617a document number 83552 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 7 package dimensions in inches (mm) i178027 .255 (6.48) .268 (6.81) 1 2 4 3 .179 (4.55) .190 (4.83) pin one id .030 (.76) .045 (1.14) 4 typ. .100 (2.54) .130 (3.30) .150 (3.81) .020 (.508 ) .035 (.89) 10 3C9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) .050 (1.27) iso method a
www.vishay.com 8 document number 83552 rev. 1.4, 26-oct-04 sfh1617a vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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