APTGF75DH120T3G APTGF75DH120T3G ? rev 0 april, 2009 www.microsemi.com 1-5 application ? ac and dc motor control ? switched mode power supplies features ? non punch through (npt) fast igbt - low voltage drop - low tail current - switching frequency up to 50 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated - symmetrical design ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor fo r temperature monitoring benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive tc of vcesat ? rohs compliant absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 100 i c continuous collector current t c = 80c 75 i cm pulsed collector current t c = 25c 150 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 500 w rbsoa reverse bias safe operating area t j = 150c 150a @ 1200v these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com 23 r1 32 30 cr3 cr1 q4 cr2 cr4 31 29 19 7 22 3 4 18 8 q1 15 16 13 14 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? v ces = 1200v i c = 75a @ tc = 80c asymmetrical - bridge npt igbt power module
APTGF75DH120T3G APTGF75DH120T3G ? rev 0 april, 2009 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 125c 500 a t j = 25c 3.2 3.7 v ce(sat) collector emitter saturation voltage v ge =15v i c = 75a t j = 125c 3.9 v v ge(th) gate threshold voltage v ge = v ce , i c = 2.5 ma 4.5 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 500 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 5.1 c oes output capacitance 0.7 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.4 nf q g gate charge v ge =15v, i c =75a v ce =600v 0.8 c t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 310 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 75a r g = 7.5 20 ns t d(on) turn-on delay time 130 t r rise time 60 t d(off) turn-off delay time 360 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 75a r g = 7.5 30 ns e on turn-on switching energy t j = 125c 9 e off turn-off switching energy v ge = 15v v bus = 600v i c = 75a r g = 7.5 t j = 125c 4 mj i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 125c 450 a diode ratings and characteristics (cr2 & cr3) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 100 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 60 a i f = 60a 2.5 3 i f = 120a 3 v f diode forward voltage i f = 60a t j = 125c 1.8 v t j = 25c 265 t rr reverse recovery time t j = 125c 350 ns t j = 25c 560 q rr reverse recovery charge i f = 60a v r = 800v di/dt =200a/s t j = 125c 2890 nc cr1 & cr4 are igbt protection diodes only
APTGF75DH120T3G APTGF75DH120T3G ? rev 0 april, 2009 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.25 r thjc junction to case thermal resistance diode 0.9 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTGF75DH120T3G APTGF75DH120T3G ? rev 0 april, 2009 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 25 50 75 100 125 150 0123456 v ce (v) i c (a) output characteristics v ge =15v v ge =12v v ge =20v v ge =9v 0 25 50 75 100 125 150 0123456 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c 0 25 50 75 100 125 150 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 4 8 12 16 20 24 28 0 25 50 75 100 125 150 i c (a) e (mj) v ce = 600v v ge = 15v r g = 7.5 ? t j = 125c eon eoff 0 5 10 15 20 25 30 35 0 10203040506070 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 75a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 150 175 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =125c r g =7.5 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGF75DH120T3G APTGF75DH120T3G ? rev 0 april, 2009 www.microsemi.com 5-5 forward characteristic of diode t j =25c t j =125c 0 25 50 75 100 125 150 00.511.522.533.5 v f (v) i f (a) hard switching zcs zvs 0 20 40 60 80 100 0 20406080100 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =7.5 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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