a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 s p ecifications are sub j ect to chan g e without notice. characteristics t c = 25c symbol none test conditions minimum typical maximum units bv ces i c = 200 ma 65 v bv ceo i c = 200 ma 35 v bv ebo i e = 10 ma 4.0 v i cbo v cb = 30 v 2.0 ma h fe v ce = 5.0 v i c = 200 ma 10 100 --- c ob v cb = 30 v f = 1.0 mhz 40 50 pf p g c v cc = 28 v p out = 15 w f = 175 mhz p in = 1.0 w 10 50 11 60 db % npn silicon rf power transistor BLY92C description: the asi BLY92C is designed for class c fm amplifier applications up to 250 mhz. features: ? p g = 11 db typical at 175 mhz ? high vswr capability ? omnigold ? metalization system maximum ratings i c 4.0 a v cbo 65 v v ceo 35 v v ebo 4.0 v p diss 40 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +150 c jc 4.4 c/w package style .380 4l stud 1 = collector 2&3 = emitter 4 = base minimum inches / mm .004 / 0.10 .370 / 9.40 .320 / 8.13 b c d e f g a maximum .385 / 9.78 .330 / 8.38 .130 / 3.30 .007 / 0.18 inches / mm h .090 / 2.29 .100 / 2.54 dim .220 / 5.59 .230 / 5.84 .490 / 12.45 .450 / 11.43 i j .155 / 3.94 .175 / 4.45 .750 / 19.05 .980 / 24.89 .100 / 2.54 e f d ?c b .112x45 g h j i a #8-32 unc-2a 1 4 23
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