2sk3270-01 n-channel mos-fet trench gate mosfet 60v 6,5m w 80a 135w > features > outline drawing - high current - low on-resistance - no secondary breakdown - low driving power - avalanche rated > applications - motor control - general purpose power amplifier - dc-dc converters > maximum ratings and characteristics > equivalent circuit - absolute maximum ratings (t c =25c), unless otherwise specified item symbol rating unit drain-source-voltage v ds 60 v continous drain current i d 80 a pulsed drain current i d(puls) 320 a gate-source-voltage v gs + 30 / -20 v maximum avalanche energy e av 613 mj* max. power dissipation p d 135 w operating and storage temperature range t ch 150 c t stg -55 ~ +150 c * l=0,13mh, v cc =24v - electrical characteristics (t c =25c), unless otherwise specified item symbol test conditions min. typ. max. unit drain-source breakdown-voltage bv dss i d =1ma v gs =0v 60 v gate threshhold voltage v gs(th) i d =10ma v ds= v gs 2,5 3,0 3,5 v zero gate voltage drain current i dss v ds =60v t ch =25c 1,0 100,0 a v gs =0v t ch =125c 10,0 500,0 a gate source leakage current i gss v gs =30v v ds =0v 10 100 na drain source on-state resistance r ds(on) i d =40a v gs =10v 5,0 6,5 m w forward transconductance g fs i d =40a v ds =10v 25 50 s input capacitance c iss v ds =25v 9000 pf output capacitance c oss v gs =0v 1250 pf reverse transfer capacitance c rss f=1mhz 700 pf turn-on-time t on ( t on =t d(on) +t r ) t d(on) v cc =30v 50 ns t r vgs=10v 200 ns turn-off-time t off (t on =t d(off) +t f ) t d(off) id=80a 150 ns t f r gs =10 w 135 ns avalanche capability i av l = 100h t ch =25c 80 a diode forward on-voltage v sd i f =80a v gs =0v t ch =25c 1,0 1,5 v reverse recovery time t rr i f =50a v gs =0v 85 ns reverse recovery charge q rr -di f /d t =100a/s t ch =25c 0,25 c - thermal characteristics item symbol test conditions min. typ. max. unit thermal resistance r th(ch-a) channel to ambient 75,0 c/ w r th(ch-c) channel to case 0,926 c/ w
n-channel mos-fet 2sk3270-01 60v 6,5m w 80a 135w trench gate mosfet > characteristics typical output characteristics drain-source on-state resistance vs. t ch typical transfer characteristics - i d =f(v ds ); 80s pulse test; t c =25c - r ds(on) = f(t ch ); i d =25a; v gs =10v - i d =f(v gs ); 80s pulse test; v ds =25v; t ch =25c i d [a] 1 r ds(on) [m w ] 2 i d [a] 3 v ds [v] ? t ch [c] ? v gs [v] ? typical drain-source on-state-resistance vs. i d typical forward transconductance vs. i d gate threshold voltage vs. t ch - r ds(on) =f(i d ); 80s pulse test; t c =25c - g fs =f(i d ); 80s pulse test; v ds =25v; t ch =25c - v gs(th) =f(t ch ); i d =1ma; v ds =v gs r ds(on) [m w ] 4 g fs [s] 5 v gs(th) [v] 6 i d [a] ? i d [a] ? t ch [c] ? typical capacitances vs. v ds typical gate charge characteristic forward characteristics of reverse diode - c=f(v ds ); v gs =0v; f=1mhz - v gs =f(qg); i d =80a; tch=25c - - i f =f(v sd ); 80s pulse test; t ch =25c c [f] 7 v ds [v] 8 v gs [v] i f [a] 9 v ds [v] ? qg [nc] ? v sd [v] ? maximum avalanche energy vs. starting t ch safe operation area e av =f(starting t ch ): v cc =24v; i av 80a i d =f(v ds ): d=0,01, tc=25c - z th(ch-c) [k/w] transient thermal impedance - 10 - 12 z thch =f(t) parameter:d=t/t e av [mj] i d [a] starting t ch [c] ? v ds [v] ? t [s] ? this specification is subject to change without notice!
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