ha1127/p/fp 5 transistor arrays ade-204-062 (z) rev. 0 dec. 2000 ordering information application type no. package commercial use ha1127 dp-14 industrial use ha1127p dp-14 ha1127fp fp-14da pin arrangement 1 2 3 4 5 6 7 14 13 12 11 10 9 8 c 5 e 5 (substrate) b 5 c 4 e 4 b 4 c 3 c 1 b 1 e 1 b 2 c 2 b 2 e 2 (top view) note: use pin 13 as the lowest potential for this ic.
ha1127/p/fp 2 absolute maximum ratings (ta = 25?) item symbol rating unit collector-base voltage v cbo 20 v collector-substrate voltage v cio 20 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 5v collector current i c 50 ma collector power dissipation p c * 1 300 mw collector power dissipation p c 750* 2 mw 625* 3 operating temperature topr ?5 to +125 c storage temperature tstg ?5 to +125 c notes: 1. allowable value per individual transistor. this is the allowable value up to ta = 25 c. derate at 3 mw/ c above that temperature. 2. allowable value for the whole package. (ha1127/p) this is the allowable value up to ta = 35 c for the ha1127p. derate at 8.3 mw/ c above that temperature. 3. allowable value for the whole package. (ha1127fp) see notes on sop package usage in reliability section. 100 450 300 150 0 allowable collector power p c , (mw) ambient temperature ta ( c) allowable collector power ambient temperature variation 50 150 0
ha1127/p/fp 3 electrical characteristics (ta = 25?) item symbol min typ max unit test condition collector-base breakdown voltage v (br)cbo 20v i c = 10 m a, i e = 0 collector-emitter breakdown voltage v (br)ceo 15v i c = 1 ma, r be = collector-substrate breakdown voltage v (br)cio 20v i c = 10 m a, i e = 0, ib = 0 emitter-base breakdown voltage v (br)ebo 5 v i e = 10 m a, i c = 0 collector cutoff i cbo 0.002 40 na v cb = 10 v, i e = 0 current i ceo 0.5 m av ce = 10 v, r be = collector-emitter saturation voltage v ce(sat) 0.17 v i c = 10 ma, i b = 1 ma base-emitter v be 0.72 v v ce = 3 v i c = 1 ma voltage 0.80 v i c = 10 ma dc current h fe 40 140 v ee = 3 v i c = 1 ma amplification ratio 120 i c = 10 ma gain-bandwidth product f t 460 mhz v ce = 3 v, i c = 3 ma collector output capacitance cob 1.7 pf v cb = 3 v, i e = 0, f = 1 mhz emitter input capacitance cib 2.0 pf v cb = 3 v, i e = 0, f = 1 mhz switching time t on 35 ns v cc = 10 v, i c = 10i b1 = ?0i b2 = 10 ma t off 130 ns t stg ?5 ns
ha1127/p/fp 4 6 k 50 v bb v cc 50 50 0.002 0.002 to oscilloscope 1 k unit: r: w c: m f p.g. t r , t f 15 ns pw 3 5 m s duty ratio 10% zout = 50 w input output 0 0 10% 90% 10% 10% 90% t on t d t stg t off symbol unit bias switching time test circuit response waveform operating conditions i c ma 10 i b1 ma +1.0 i b2 ma ?.0 v cc v 10.3 v bb v ?.0 v in v +13.0 6 k + 90% +
ha1127/p/fp 5 0.9 0.8 0.7 0.6 25 50 40 30 20 10 0 collector current i c (ma) collector-emitter voltage v ce (v) emitter-ground output static characteristics (1) 134 10 25 10 8 6 4 2 0 collector current i c (ma) collector-emitter voltage v ce (v) emitter-ground output static characteristics (2) 5152030 0.005 0.02 0.2 1.0 5 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 collector-emitter voltage v ce (v) base current i b (ma) collector-emitter voltage vs. base current characteristics 0.01 0.05 2 0.5 2 20 240 200 160 120 80 40 0 dc current amplification ratio h fe collector current i c (ma) dc current amplification ratio vs. collector current characteristics 1.0 5 10 50 10 20 50 0.1 0.5 0.5 0.4 0.3 0.2 0.1 ma i b = 0 i b = 0 0.01 ma 0.02 0.03 0.04 0.05 0.06 0.07 0.08 i c = 1 ma 2 5 10 20 50 v ce = 3 v ta = 125 c 75 25 ?5 ?5
ha1127/p/fp 6 50 5 0.5 2 20 2,000 collector-emitter saturation voltage v ce(sat) (mv) collector current i c (ma) collector-emitter saturation voltage vs. collector current characteristics 1.0 5 10 50 ?0 0 75 125 1.1 1.0 0.9 0.8 0.7 0.6 0.5 base-emitter voltage v be (v) ambient temperature ta ( c) base-emitter voltage vs. ambient temperature characteristics ?5 25 50 100 15 50 500 400 300 200 100 0 gain-bandwidth product f t (mhz) collector current i c (ma) gain-bandwidth product vs. collector current characteristics 21020 0.2 1.0 10 2.5 2.0 1.5 1.0 0.5 0 emitter input capacitance cib (pf) emitter output capacitance cob (pf) collector-base voltage v cb (v) emitter-base voltage v eb (v) input and output capacitances vs. voltage characteristics 0.5 2 5 20 1,000 500 200 100 50 20 10 20 v ce = 3 v c ob (i e = 0) c ib (i c = 0) f = 1 mhz ta = 125 c 75 25 ?5 ?5 2 1 i c = 0.5 ma i c = 10i b
ha1127/p/fp 7 i c = 10i b1 = ?0i b2 0.5 2 20 1.0 switching time t ( m s) collector current i c (ma) switching time vs. collector current characteristics 1.0 5 10 0.5 0.2 0.1 0.005 0.01 0.02 0.05 50 switching time test circuit response waveform to oscilloscope r c 10 v 0.002 + + 50 50 0.002 4 v 50 r s +9 v 0 unit: r: w c: m f p.g. t r , t f 15 ns pw 3 20 m s duty ratio 10% 0 0 t on t d t stg t off 90% 10% 10% 10% 90% 90% t off t stg t on t d
ha1127/p/fp 8 package dimensions hitachi code jedec eiaj mass (reference value) dp-14 conforms conforms 0.97 g unit: mm 7.62 0.25 0 ?15 19.20 20.32 max 1 8 14 7 1.30 2.54 0.25 0.48 0.10 6.30 7.40 max 0.51 min 2.54 min 5.06 max + 0.10 ?0.05 2.39 max hitachi code jedec eiaj mass (reference value) fp-14da conforms 0.23 g unit: mm *dimension including the plating thickness base material dimension *0.22 0.05 *0.42 0.08 0.70 0.20 0.12 0.15 0 ?8 m 0.10 0.10 2.20 max 5.5 10.06 1.42 max 14 8 1 7 10.5 max + 0.20 ?0.30 7.80 1.15 1.27 0.40 0.06 0.20 0.04
ha1127/p/fp 9 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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