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the documentation and process conversion inch pound measures necessary to comply with this revision shall be completed by 08 march 1998. mil-prf-19500/555g 08 december 1997 superseding mil-s-19500/555f 31 march 1995 performance specification sheet semiconductor device, field effect transistor, n-channel, silicon types 2n6788, 2n6788u, 2n6790, 2n6790u, 2n6792, 2n6792u, 2n6794 and 2n6794u jan, jantx, jantxv, jans, janhc, and jankc this specification is approved for use by all depart- ments and agencies of the department of defense. 1. scope 1.1 scope. this specification covers the performance requirements for an n-channel, enhancement-mode, mosfet, power transistor. four levels of product assurance are provided for each device type as specified in mil-prf-19500. two levels of product assurance are provided for each unencapsulated device type. 1.2 physical dimensions. see figures 1 (to-205af), 3 (lcc), and figures 4, 5, 6, and 7 for janhc and jankc (die) dimensions. 1.3 unless otherwise specified, maximum ratings at t a = +25 ( c. type 4/ p t 1/ t c = +25 ( c p t t c = +25 ( c v ds v dg v gs i d1 t c = +25 ( c i d2 t c = +100 ( c i s i dm 3/ t j and t stg v ds and v dg 100k ft. altitude r jc 2n6788 2n6790 2n6792 2n6794 w 20 20 20 20 w 0.8 0.8 0.8 0.8 v dc 100 200 400 500 v dc 100 200 400 500 v dc 20 20 20 20 a dc 6.0 3.5 2.0 1.5 a dc 3.5 2.25 1.25 1.0 a dc 6.0 3.5 2.0 1.5 a (pk) 24 14 8 6 ( c -55 q to +150 q 300 300 ( c/w 6.25 6.25 6.25 6.25 1/ derate linearly 0.16 w/ ( c for t c > +25 ( c. 2/ d j( ) c jx) ds(on) j( ) i = t - t ( r x ( r at t max max q 3/ i dm = 4i d1 ; i d1 as calculated in footnote 2 /. 4/ electrical characteristics for "u" suffix devices are identical to the corresponding non"u" suffix devices unless otherwise specified. beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: commander, defense supply center columbus, attn: dscc-vat, 3990 east broad st., columbus, oh 43216-5000, by using the addressed standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter. amsc/na fsc 5961 distribution statement a. approved for public release; distribution is unlimited. t j( ) c jx p = t - t r max q
mil-prf-19500/555g 2 1.4 unless otherwise specified, primary electrical characteristics at t c = +25 ( c. type 2/ min v (br)dss v gs = 0 i d = 1.0 ma dc v gs(th)1 v ds v gs i d = 0.25 ma max i dss1 v gs = 0 max r ds(on) 1/ v gs = 10 v dc i d = i d2 v ds = 80 percent of rated v ds t j = +25 ( ct j = +150 ( c 2n6788 2n6790 2n6792 2n6794 v dc 100 200 400 500 v dc min max 2.0 4.0 2.0 4.0 2.0 4.0 2.0 4.0 a dc 25 25 25 25 ohms 0.30 0.80 1.80 3.00 ohms 0.60 1.80 4.50 7.50 1/ pulsed (see 4.5.1). 2/ electrical characteristics for "u" suffix devices are identical to the corresponding non"u" suffix devices unless otherwise specified. 2. applicable documents 2.1 government documents. 2.1.1 specifications, standards, and handbooks. the following specifications, standards, and handbooks form a part of this document to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification military mil-prf-19500 - semiconductor devices, general specification for. standard military mil-std -750 - test methods for semiconductor devices. (unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the defense printing service detachment office, building 4d (customer service), 700 robbins avenue, philadelphia, pa 19111-5094.) 2.2 order of precedence. in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 associated specification. the individual item requirements shall be in accordance with mil-prf-19500 and as specified herein. 3.2 abbreviations, symbols, and definitions. abbreviations, symbols, and definitions used herein shall be as specified in mil-prf- 19500. 3.3 interface requirements and physical dimensions. the interface requirements and physical dimensions shall be as specified in mil-prf-19500, and figures 1 (t0-205), 3 (lcc), 4, 5, 6, and 7 (die) herein.
mil-prf-19500/555g 3 ltr dimensions inches millimeters notes min max min max cd .305 .335 7.75 8.51 6 ch .160 .180 4.07 4.57 hd .335 .370 8.51 9.40 4 lc .200 tp 5.08 tp 7 ld .016 .021 0.41 0.53 8, 9 ll .500 .750 12.70 19.05 8, 9 lu .016 .019 0.41 0.48 8, 9 l 1 .050 1.27 8, 9 l 2 .250 6.35 8, 9 p .100 2.54 6 q .050 1.27 5 r .010 0.25 10 tl .029 .045 0.74 1.14 4 tw .028 .034 0.71 0.86 3 45 tp 45 tp 7 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. beyond radius (r) maximum, j shall be held for a minimum length of .011 inch (0.028 mm). 4. dimension k measured from maximum hd. 5. outline in this zone is not controlled. 6. dimension cd shall not vary more than .010 inch (0.25 mm) in zone p. this zone is controlled for automatic handling. 7. leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods or by the gauge and gauging procedure shown on figure 2. 8. lu applies between l 1 and l 2 . ld applies between l 2 and ll minimum. diameter is uncontrolled in l 1 and beyond l minimum. 9. all three leads. 10. radius (r) applies to both inside corners of tab. 11. drain is electrically connected to the case. 12, in accordance with ansi y14.5m, diameters are equivalent to 1 x symbology. figure 1. physical dimensions for to-205af.
mil-prf-19500/555g 4 ltr dimensions inches millimeters notes min max min max 1 b 1 .0595 .0605 1.51 1.54 1 b 2 .0325 .0335 0.83 0.85 e .1995 .2005 5.07 5.09 e 1 .0995 .1005 2.53 2.55 h .150 nominal 3.81 nominal j .0175 .0180 0.44 0.46 j 1 .0350 .0355 0.89 0.90 k .009 .011 0.23 0.28 k 1 .125 nominal 3.18 nominal l .372 .378 9.45 9.60 l 1 .054 .055 1.37 1.40 5 s .182 .199 4.62 5.05 3 44.90 ( 45.10 ( 44.90 ( 45.10 ( notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. the location of the tab locator within the limits indicated will be determined by the tab and flange dimensions of the device being checked. 4. gauging procedure. the device being measured shall be inserted until its seating plane is .125 .010 inch (3.18 0.25 mm) from the seating surface of the gauge. a force of 8 .5 ounces shall then be applied parallel and symmetrical to the device's cylindrical axis. the seating plane of the device shall be seated against the gauge. the use of a pin straightener prior to insertion in the gauge is permissible. 5. gauging plane. 6. drill angle. figure 2. gauge for lead and tab locations.
mil-prf-19500/555g 5 sym. inches millimeters min max min max bl .345 .360 8.77 9.14 bw .280 .295 7.12 7.49 ch .095 .115 2.42 2.92 ll1 .040 .055 1.02 1.39 ll2 .055 .065 1.40 1.65 ls .050 bsc 1.27 bsc ls1 .025 bsc 0.635 bsc notes: 1. dimensions are in inches. metric equivalents are ls2 .008 bsc 0.203 bsc given for information only. 2. in accordance with ansi y14.5m, diameters are lw .020 .030 0.51 0.76 equivalent to 1 x symbology. q1 .105 ref 2.67 ref q2 .120 ref 3.05 ref q3 .045 .055 1.15 1.39 tl .070 .080 1.78 2.03 tw .120 .130 3.05 3.30 figure 3. physical dimensions for lcc.
mil-prf-19500/555g 6 a version dimensions - 2n6788 dimensions - 2n6790 dimensions - 2n6792, 2n6794 ltr inches millimeters inches millimeters inches millimeters min max min max min max min max min max min max a .107 .121 2.72 3.07 .094 .112 2.39 2.85 .131 .147 3.33 3.73 b .078 .088 1.98 2.24 .083 .099 2.11 2.52 .090 .106 2.29 2.69 c .020 .030 0.51 0.76 .018 .028 0.46 0.71 .022 .032 0.56 0.81 d .027 .037 0.69 0.94 .028 .038 0.71 0.97 .028 .038 0.71 0.97 e .013 .023 0.33 0.58 .015 .025 0.38 0.64 .015 .025 0.38 0.64 f .019 .029 0.48 0.74 .018 .028 0.46 0.71 .020 .030 0.51 0.76 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. die thickness = .019 .005 inch (0.48 0.13 mm). 4. back metal: cr - ni - ag. 5. top metal: al. 6. back contact: drain. 7. layout of gate fingers shown is typical, specific layout register in accordance with form 36d. figure 4. physical dimensions janhca and jankca.
mil-prf-19500/555g 7 b version dimensions ltr inches millimeters min max min max a .114 .118 2.9 3.0 b .120 .124 3.0 3.1 c .018 .022 0.46 0.56 d .028 .032 0.71 0.81 e .018 .022 0.46 0.56 f .029 .033 0.74 0.84 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. die thickness = .014 .005 inch (0.36 0.13 mm). 4. back metal: al - ti - ni. 5. top metal: al. 6. back contact: drain. figure 5. physical dimensions janhcb and jankcb.
mil-prf-19500/555g 8 c version dimensions 2n6788, 2n6790 ltr inches millimeters min max min max a .0858 .0898 2.18 2.28 b .087 .091 2.21 2.31 c .0258 .0298 0.65 0.76 d .0253 .0293 0.64 0.74 e .017 .021 0.43 0.53 f .016 .020 0.41 0.51 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. die thickness = .015 .005 inch (0.38 0.13 mm). 4. back metal: ag - ti - ni. 5. top metal: al. 6. back contact: drain. figure 6. physical dimensions janhcc and jankcc.
mil-prf-19500/555g 9 d version dimensions 2n6792 and 2n6794 ltr inches millimeters min max min max a .093 .102 2.36 2.59 b .140 .144 3.56 3.66 c .025 .029 0.64 0.74 d .026 .030 0.66 0.76 e .016 .020 0.41 0.51 f .017 .021 0.43 0.53 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. die thickness = .015 .005 inch (0.38 0.13 mm). 4. back metal: ag - ti - ni. 5. top metal: al. 6. back contact: drain. figure 7. physical dimensions janhcd and jankcd.
mil-prf-19500/555g 10 3.3.1 lead material and finish. lead material shall be kovar or alloy 52; a copper core is permitted (for t0-205af). lead finish shall be solderable in accordance with mil-prf-19500, mil -std -750, and herein. where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.4). 3.3.2 internal construction. multiple chip construction shall not be permitted. 3.4 marking. marking shall be in accordance with mil-prf-19500. 3.5 electrostatic discharge protection. the devices covered by this specification require electrostatic protection. 3.5.1 handling. mos devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. however, the following handling practices are recommended (see 3.5). a. devices should be handled on benches with conductive and grounded surface. b. ground test equipment, tools, and personnel handling devices. c. do not handle devices by the leads. d. store devices in conductive foam or carriers. e. avoid use of plastic, rubber, or silk in mos areas. f. maintain relative humidity above 50 percent, if practical. g. care should be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. gate must be terminated to source. r 100 k, whenever bias voltage is to be applied drain to source. 3.6 electrical performance characteristics. unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i. 3.7 electrical test requirements. the electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3. 3.8 qualification. devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.2 ). 4. verification 4.1 classification of inspections. the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3) c. conformance inspection (see 4.4). 4.2 qualification inspection. qualification inspection shall be in accordance with mil-prf-19500. alternate flow is allowed for qualification inspection in accordance with mil-prf-19500. 4.2.1 group e. group e inspection shall be conducted in accordance with mil-prf-19500, and table ii herein.
mil-prf-19500/555g 11 4.3 screening (jans, jantx, and jantxv levels only). screening shall be in accordance with table iv of mil-prf-19500, and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. measurement screen (see table iv of mil-std -19500) jans level jantx and jantxv levels 1/ gate stress test (see 4.5.5) gate stress test (see 4.5.5) 1/ 2/ method 3470 (see 4.5.4) method 3470 (see 4.5.4) 1/ method 3161 (see 4.5.3) method 3161 (see 4.5.3) 3 temperature cycling, mil -std -750, temperature cycling, mil -std -750, method 1051, test condition g method 1051, test condition g 9 1/ i gss1, i dss1 11 subgroup 2 of table i herein subgroup 2 of table i herein i gss1 , i dss1 , r ds(on)1 , v gs(th)1 i gss1 , i dss1 , r ds(on)1 , of table i, subgroup 2 herein; v gs(th)1 i gss1 = 20 na dc or 100 percent of initial value, whichever is greater. i dss1 = 25 a dc or 100 percent of initial value, whichever is greater. 12 3/ mil-std -750, method 1042, mil-std -750, method 1042, condition a; condition a or accelerated test t a = +175 ( c, t = 48 hours 13 subgroups 2 and 3 of table i herein; subgroup 2 of table i herein; i gss1 = 20 na dc or 100 percent i gss1 = 20 na dc or 100 percent of initial value, whichever is of initial value, whichever is greater. greater. i dss1 = 25 a dc or 100 percent i dss1 = 25 a dc or 100 percent of initial value, whichever is of initial value, whichever is greater. greater. r ds(on)1 = 20 percent of initial r ds(on)1 = 20 percent initial value. value. v gs(th)1 = 20 percent of initial v gs(th)1 = 20 percent initial value. value. 1/ shall be performed anytime before screen 4. 2/ this test method in no way implies a repetitive avalanche energy rating. this is a stress test designed to ensure a rugged product. this test need not be performed in group a when performed as a screen. 3/ use of accelerated screening option (specified in screen 12 of mil-prf-19500) requires a 1,000 hour life test in accordance with the applicable group e, subgroup 2 life test and end-points specified herein. this data shall be provided to the qualifying activity for review and acceptance. 4.3.1 screening (janhc and jankc). screening of die shall be in accordance with mil-prf-19500, as a minimum, die shall be 100 percent probed in accordance with group a, subgroup 2, except test current shall not exceed 20 a.
mil-prf-19500/555g 12 4.3.2 janhc and jankc die. qualification shall be in accordance with mil-prf-19500. 4.4 conformance inspection. conformance inspection shall be in accordance with mil-prf-19500. alternate flow is allowed for conformance inspection in accordance with mil-prf-19500. 4.4.1 group a inspection. group a inspection shall be conducted in accordance with mil-prf-19500 and table i herein. electrical measurements (end-points) shall be in accordance with the inspections of table i, group a, subgroup 2 herein. 4.4.2 group b inspection. group b inspection shall be conducted in accordance with the conditions specified for subgroup testing in table via (jans) and table vib (jantx and jantxv) of mil-prf-19500 and as follows. electrical measurements (end-points) shall be in accordance with the inspections of table i, group a, subgroup 2 herein. 4.4.2.1 group b inspection table via (jans) of mil-prf-19500. subgroup method conditions b3 1051 test condition g. b3 2037 test condition a. all internal wires for each device shall be pulled separately. if group b3 is to be continued to c6, strength test may be performed after c6. b4 1042 test condition d, 2,000 cycles. the heating cycle shall be 1 minute minimum. no heat sink nor forced air cooling on the device shall be permitted during the "on" cycle. b5 1042 a separate sample may be pulled for each test. accelerated steady-state reverse bias; test condition a, v ds = rated, t a = +175 ( c, t = 120 hours, read and record v br(dss) (pre and post) at i d = -1 ma. read and record i dss (pre and post). b5 1042 accelerated steady-state gate stress; test condition b, v gs = rated, t a = +175 ( c, t = 24 hours. b6 see 4.5.2 4.4.2.2 group b inspection table vib (jantx and jantxv) of mil-prf-19500. subgroup method conditions b2 1051 test condition g. b3 1042 test condition d, 2,000 cycles. the heating cycle shall be 1 minute minimum. no heat sink nor forced air cooling on the device shall be permitted during the "on" cycle. b3 2037 test condition a. all internal wires for each device shall be pulled separately. if group b3 is to be continued to c6, bond strength test may be performed after c6. b6 not applicable. 4.4.3 group c inspection. group c inspection shall be conducted in accordance with the conditions specified for subgroup testing in table vii of mil-prf-19500 and as follows. electrical measurements (end-points) shall be in accordance with the inspections of table i, group a, subgroup 2 herein. 4.4.3.1 group c inspection (table vii of mil-prf-19500). subgroup method conditions c2 2036 test condition e (not required for lcc). c6 1042 test condition d, 6,000 cycles. the heating cycle shall be 1 minute minimum. no heat sink nor forced air cooling on the device shall be permitted during the "on" cycle.
mil-prf-19500/555g 13 4.5 methods of inspection. methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 pulse measurements. conditions for pulse measurement shall be as specified in section 4 of mil -std -750. 4.5.2 thermal resistance. thermal resistance measurements shall be performed in accordance with method 3161 of mil -std -750. r jc(max) = 6.25 ( c/w. a. i m measuring current ................................................................................. 10 ma. b. i h drain heating current.............................................................................. 1 a minimum. c. t h heating time ........................................................................................... steady state (see mil -std -750, method 3161). d. v h drain-source heating voltage ................................................................ 14 v minimum. e. t md measurement time delay ..................................................................... 30 to 60 s. f. t sw sample window time ........................................................................... 10 s maximum. 4.5.3 thermal response (z jx measurements) . the z jx measurements shall be performed in accordance with method 3161 of mil -std -750. the maximum limit (not to exceed figure 8, thermal impedance curves and the group a subgroup 2 limits) for z jx in screening (table iv of mil-prf-19500) shall be derived by each vendor by means of statistical process control. when the process has exhibited control and capability, the capabliity data shall be used to establish the fixed screening limit. in addition to screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the applicable x, r chart. if a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for engineering evaluation and disposition. this procedure may be used in lieu of an inline process monitor. a. i m measuring current ................................................................................. 10 ma. b. i h drain heating current.............................................................................. 1 a minimum. c. t h heating time ........................................................................................... 10 ms. d. v h drain-source heating voltage ................................................................ 14 v minimum. e. t md measurement time delay ..................................................................... 10 to 80 s. f. t sw sample window time ........................................................................... 10 s maximum. 4.5.4 single pulsed unclamped inductive switching. a. peak current, i d ......................................................................................... 2.2 a. b. peak gate voltage, v gs ............................................................................. 10 v. c. gate to source resistor, r gs ..................................................................... 25 r g 200 6 . d. initial case temperature .............................................................................. +25 ( c, +10 ( c, -5 ( c. e. inductance, l ............................................................................................. 100 h 10 percent. f. number of pulses to be applied.................................................................. 1 pulse. 4.5.5 gate stress test. v gs = 30 v minimum; t = 250 s minimum.
mil-prf-19500/555g 14 table i. group a inspection. inspection 1/, 4 / mil-std -750 symbol limits unit method conditions min max subgroup 1 visual and mechanical 2071 inspection subgroup 2 thermal impedance 2/ 3161 see 4.5.3 z jc 2.3 q c/w breakdown voltage, 3407 i d = 1.0 ma dc, v (br)dss drain to source bias condition c, v gs = 0 v dc 2n6788 100 v dc 2n6790 200 v dc 2n6792 400 v dc 2n6794 500 v dc gate to source voltage 3403 v ds v gs , v gs(th)1 2.0 4.0 v dc (threshold) i d = .25 ma gate current 3411 v gs = +20 v dc and -20 v dc, i gss1 100 na dc bias condition c, v ds = 0 drain current 3413 v ds = 80 percent of rated v ds , i dss1 25 a dc bias condition c, v gs = 0 static drain to source 3421 v gs = 10 v dc, condition a, r ds(on)1 "on"-state resistance pulsed (see 4.5.1), i d = rated i d2 (see 1.3) 2n6788 0.30 6 2n6790 0.80 6 2n6792 1.80 6 2n6794 3.00 6 static drain to source 3421 v gs = 10 v dc, pulsed, r ds(on)2 "on"-state resistance (see 4.5.1); condition a, i d = rated i d1 (see 1.3) 2n6788 0.35 6 2n6790 0.85 6 2n6792 1.90 6 2n6794 3.10 6 forward voltage 4011 pulsed (see 4.5.1), v sd (source drain diode) i s = i d1 2n6788 1.8 v 2n6790 1.5 v 2n6792 1.4 v 2n6794 1.2 v see footnotes at end of table.
mil-prf-19500/555g 15 table i. group a inspection - continued. inspection 1/, 4 / mil-std -750 symbol limits unit method conditions min max subgroup 3 high temperature operation: t c = t j = +125 ( c gate to source voltage 3403 v ds v gs v gs(th)2 1.0 v dc (threshold) i d = .25 ma dc gate current 3411 v gs = +20 v dc and -20 v dc, i gss2 200 na dc bias condition c, v ds = 0 drain current 3413 v ds = 80 percent rated, i dss2 .25 ma dc bias condition c, pulsed (see 4.5.1) static drain to source 3421 v gs = 10 v dc, r ds(on)3 "on"-state resistance pulsed (see 4.5.1), i d = rated i d2 (see 1.3) 2n6788 0.54 6 2n6790 1.50 6 2n6792 4.00 6 2n6794 6.60 6 low temperature operation: t c = t j = -55 ( c gate to source voltage 3403 v ds v gs , v gs(th)3 5.0 v dc (threshold) i d = .25 ma dc subgroup 4 switching time test 3472 i d = rated i d1 (see 1.3), v gs = 10 v dc, gate drive impedance = 7.5 6 turn -on delay time t d(on) 2n6788 v dd = 35 v dc 40 ns 2n6790 v dd = 74 v dc 40 ns 2n6792 v dd = 175 v dc 40 ns 2n6794 v dd = 225 v dc 40 ns rise time t r 2n6788 v dd = 35 v dc 70 ns 2n6790 v dd = 74 v dc 50 ns 2n6792 v dd = 175 v dc 35 ns 2n6794 v dd = 225 v dc 30 ns see footnotes at end of table.
mil-prf-19500/555g 16 table i. group a inspection - continued. inspection 1/, 4 / mil-std -750 symbol limits unit method conditions min max subgroup 4 - continued turn -off delay time t d(off) 2n6788 v dd = 35 v dc 40 ns 2n6790 v dd = 74 v dc 50 ns 2n6792 v dd = 175 v dc 60 ns 2n6794 v dd = 225 v dc 60 ns fall time t f 2n6788 v dd = 35 v dc 70 ns 2n6790 v dd = 74 v dc 50 ns 2n6792 v dd = 175 v dc 35 ns 2n6794 v dd = 225 v dc 30 ns subgroup 5 safe operating area test 3474 see figure 9, v ds = 80 percent of rated v ds , v ds 200 v, t p = 10 ms electrical measurements see table i, group a herein single pulse unclamped 3/ 3470 see 4.5.4, 116 devices, inductive switching c = 0 electrical measurements see table i, group a herein subgroup 6 not applicable subgroup 7 gate charge 3471 condition b on-state gate charge q g(on) nc 2n6788 17.0 2n6790 14.3 2n6792 15.5 2n6794 16.7 see footnotes at end of table.
mil-prf-19500/555g 17 table i. group a inspection - continued. inspection 1/, 4 / mil-std -750 symbol limits unit method conditions min max subgroup 7 - continued charge gate to source q gs nc 2n6788 4.0 2n6790 3.0 2n6792 2.6 2n6794 3.0 charge gate to drain q gd nc 2n6788 8.0 2n6790 9.0 2n6792 8.3 2n6794 8.7 reverse recovery time 3473 v dd 50 v, d i /d t 100 t rr ns a/ s, i f = i d1 2n6788 240 2n6790 400 2n6792 650 2n6794 900 1/ for sampling plan, see mil-prf-19500. 2/ this test is required for the following end point measurements only (not intended for screen 13): jans - group b, subgroups 3 and 4; jan, jantx, and jantxv - group b, subgroups 2 and 3; group c, subgroup 6; group e, subgroup 1 3/ this test need not be performed in group a when performed as a 100 percent screen. 4/ electrical characteristics for "u" suffix devices are identical to the corresponding non"u" suffix devices unless otherwise specified.
mil-prf-19500/555g 18 table ii. group e inspection (all product assurance levels). mil-std -750 qualification inspection conformance method conditions inspection subgroup 1 22 devices, c = 0 temperature cycling 1051 condition g, 200 cycles hermetic seal 1071 electrical measurements see table i, group a, subgroup 2 subgroup 2 22 devices, c = 0 steady-state reverse bias 1042 condition a, 1,000 hours electrical measurements see table i, group a, subgroup 2 steady-state gate bias 1042 condition b, 1,000 hours, v gs = 80 percent of rated (see 3.1) electrical measurements see table i, group a, subgroup 2 subgroup 3 not applicable subgroup 4 10 devices, c = 0 thermal resistance 3161 r jc = 6.25 ( c/w (maximum), see 4.5.2 subgroup 5 5 devices, c = 0 barometric pressure 1001 test condition c, v iso = v ds (reduced) maximum limit; i iso = .25 ma dc 2n6792 v ds = 300 v 2n6794 v ds = 300 v
mil-prf-19500/555g 19 figure 8. transient thermal response.
mil-prf-19500/555g 20 2n6788, 2n6788u figure 9. maximum safe operating area.
mil-prf-19500/555g 21 2n6790, 2n6790u figure 9. maximum safe operating area - continued.
mil-prf-19500/555g 22 2n6792, 2n6792u figure 9. maximum safe operating area - continued.
mil-prf-19500/555g 23 2n6792, 2n6792u figure 9. maximum safe operating area - continued.
mil-prf-19500/555g 24 5. packaging 5.1 packaging. for acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). when actual packaging of material is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging activity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense agency's automated packaging files, cd-rom products, or by contacting the responsible packaging activity. 5.2 marking. unless otherwise specified (see 6.2), marking shall be in accordance with mil-prf-19500. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 notes. the notes specified in mil -prf -19500 are applicable to this specification. 6.2 acquisition requirements. acquisition documents should specify the following: a. issue of dodiss to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see 2.2.1). b. lead finish (see 3.3.1). c. type designation and product assurance level. d. packaging requirements (see 5.1). 6.3 cross -reference complement list. parts from this specification may be used to supersede the following commercial part or identifying number (pin) listed below. complementary transistors are covered by mil-prf-19500/564: preferred types 1/ commercial types 2n6788 irff120 2n6790 irff220 2n6792 irff320 2n6794 irff420 2n6788u irfe120 2n6790u irfe220 2n6792u irfe320 2n6794u irfe420 1/ prefixes are jan, jantx, jantxv, or jans 6.4 changes from previous issue. marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. 6.5 qualification. with respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in qualified products list qpl-19500 whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. information pertaining to qualification of products may be obtained from defense supply center columbus, dscc-vqe, columbus, oh 43216.
mil-prf-19500/555g 25 6.6 suppliers of janhc and jankc die. the qualified die suppliers with the applicable letter version (example, janhca2n6782) will be identified on the qpl. janc ordering information manufacturer pin 59993 18722 17856 2n6788 janhca2n6788 janhcb2n6788 janhcc2n6788 jankca2n6788 jankcb2n6788 jankcc2n6788 2n6790 janhca2n6790 janhcb2n6790 janhcc2n6790 jankca2n6790 jankcb2n6790 jankcc2n6790 2n6792 janhca2n6792 janhcb2n6792 janhcd2n6792 jankca2n6792 jankcb2n6792 jankcd2n6792 2n6794 JANHCA2N6794 janhcb2n6794 janhcd2n6794 jankca2n6794 jankcb2n6794 jankcd2n6794 6.7 changes from previous issue. marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. concluding material custodians: preparing activity: army - er dla - cc navy - ec air force - 17 (project 5961-1957) nasa - na review activities: army - ar, mi, sm navy - as, cg, mc air force - 13, 19, 85, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. i recommend a change: 1. document number mil-prf-19500/555g 2. document date (yymmdd) 97/12/08 3. document title semiconductor device, field effect transistor, n-channel, silicon types 2n6788, 2n6788u, 2n6790, 2n6790u, 2n6792, 2n6792u, 2n6794 and 2n6794u jan, jantx, jantxv, jans, janhc, and jankc 4. nature of change (identify paragraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) (1) commercial (2) autovon (if applicable) 7. date submitted (yymmdd) 8. preparing activity a. name alan barone b. telephone (include area code) (1) commercial (2) autovon 614-692-0510 850-0510 c. address (include zip code) defense supply center columbus attn: dscc-vat columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense quality and standardization office 5203 leesburg pike, suite 1403, falls church, va 22041-3466 telephone (703) 756-2340 autovon 289-2340 dd form 1426, oct 89 previous editions are obsolete 198/290

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