for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 HMC669LP3 / 669lp3e gaas phemt mmic lna w/ failsafe bypass mode, 1700 - 2200 mhz v04.0709 general description features functional diagram the h m c669 lp 3( e ) is a versatile, high dynamic range gaas mmi c l ow noise amplifer that integrates a low loss l na bypass mode on the i c. the amplifer is ideal for receivers and l na modules operating be - tween 1.7 and 2.2 ghz and provides 1.4 db noise fgure, 17 db of gain and +29 dbm ip 3 from a single supply of +5v @ 86ma. i nput and output return losses are excellent and no external matching components are required. a single control line is used to switch between l na mode and a low loss bypass mode. f ailsafe topology also enables the l na bidirectional bypass path when no dc power is available. noise f igure: 1.4 db o utput ip 3: +29 dbm gain: 17 db f ailsafe o peration: bypass is enabled when l na is unpowered s ingle s upply: +3v or +5v 16 l ead 3x3mm q fn p ackage: 9 mm 2 electrical specifcations, t a = +25 c, rbias = 15 ohm typical applications the h m c669 lp 3( e ) is ideal for: ? cellular/3g and l t e / w i m ax/4g ? bt s & i nfrastructure ? r epeaters and f emtocells ? tower m ounted amplifers ? test & m easurement e quipment p arameter l na m ode bypass m ode f ailsafe m ode units vdd = +3v vdd = +5v m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. f requency r ange 1.7 - 2.2 1.7 - 2.2 1.7 - 2.2 1.7 - 2.2 ghz gain 12 15 14 17 -3 -2.1 -3 -2.1 db gain variation o ver temperature 0.015 0.014 0.0008 0.0008 db / c noise f igure 1.4 1.65 1.4 1.65 db i nput r eturn l oss 10 11 12 12 db o utput r eturn l oss 13 13 12 12 db r everse i solation 28 30 - - db p ower for 1db compression ( p 1db) [1] 11.5 12 21 24 dbm third o rder i ntercept ( ip 3) [2] 25 29 25 25 dbm s upply current ( i dd) 49 59 86 105 0.04 - ma s witching s peed l na m ode to bypass m ode bypass m ode to l na m ode 80 - ns ns 100 100 [1] p 1db for l na m ode is referenced to rfo ut while p 1db for bypass and f ailsafe m odes are referenced to rfi n. [2] ip 3 for l na m ode is referenced to rfo ut while ip 3 for bypass and f ailsafe m odes are referenced to rfi n.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 HMC669LP3 / 669lp3e v04.0709 gaas phemt mmic lna w/ failsafe bypass mode, 1700 - 2200 mhz lna - gain vs. temperature [1] lna - broadband gain & return loss lna - return loss vs. temperature [1] lna - gain vs. temperature [2] lna - noise figure vs. temperature [3] 10 12 14 16 18 20 22 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 vdd=5v vdd=3v frequency (ghz) response (db) s11 s21 s22 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 vdd=5v vdd=3v frequency (ghz) noise figure (db) +85c +25c -40c 10 12 14 16 18 20 22 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) gain (db) lna - output ip3 vs. temperature, output power @ 0 dbm 14 18 22 26 30 34 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) ip3 (dbm) vdd=5v vdd=3v [1] vdd = 5v [2] vdd = 3v [3] m easurement reference plane shown on evaluation p cb drawing. -30 -25 -20 -15 -10 -5 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) return loss (db) input return loss output return loss
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 HMC669LP3 / 669lp3e v04.0709 gaas phemt mmic lna w/ failsafe bypass mode, 1700 - 2200 mhz lna - reverse isolation vs. temperature [1] lna - output p1db vs. temperature [2] lna - output p1db, gain & noise figure [3] vs. vdd @ 1900 mhz lna - output p1db vs. temperature [1] 2 4 6 8 10 12 14 16 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) p1db (dbm) 2 4 6 8 10 12 14 16 18 20 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) p1db (dbm) 8 10 12 14 16 18 22 26 30 34 38 42 40 45 50 55 gain (db) , p1db (dbm) ip3 (dbm) idd (ma) ip3 gain p1db 8 10 12 14 16 18 25 29 33 37 41 45 70 75 80 85 90 95 gain (db) , p1db (dbm) ip3 (dbm) idd (ma) ip3 gain p1db 8 10 12 14 16 18 20 0.8 1 1.2 1.4 1.6 1.8 2 3 3.5 4 4.5 5 p1db gain nf gain (db) & p1db (dbm) noise figure (db) voltage supply (v) -40 -35 -30 -25 -20 -15 -10 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) isolation (db) [1] vdd = 5v [2] vdd = 3v [3] m easurement reference plane shown on evaluation p cb drawing. lna - gain, p1db, output ip3 vs. current [2] @ 1900 mhz lna - gain, p1db, output ip3 vs. current [1] @ 1900 mhz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 HMC669LP3 / 669lp3e v04.0709 gaas phemt mmic lna w/ failsafe bypass mode, 1700 - 2200 mhz bypass mode - input ip3 vs. output power @ 1900 mhz bypass mode - broadband gain & return loss bypass mode - insertion loss vs. temperature bypass mode - output return loss vs. temperature bypass mode - input return loss vs. temperature bypass mode - input ip3 vs. temperature, output power @ 5 dbm 16 20 24 28 32 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) ip3 (dbm) -5 -4 -3 -2 -1 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) gain (db) -25 -20 -15 -10 -5 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) return loss (db) -20 -15 -10 -5 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) return loss (db) 15 20 25 30 35 40 -10 -5 0 5 10 15 +25c +85c -40c pout (dbm) ip3 (dbm) -16 -14 -12 -10 -8 -6 -4 -2 0 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 s21 s11 s22 frequency (ghz) response (db)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 HMC669LP3 / 669lp3e v04.0709 gaas phemt mmic lna w/ failsafe bypass mode, 1700 - 2200 mhz failsafe mode - input ip3 vs. output power @ 1900 mhz failsafe mode - broadband gain & return loss failsafe mode - insertion loss vs. temperature failsafe mode - output return loss vs. temperature failsafe mode - input return loss vs. temperature failsafe mode - input ip3 vs. temperature, output power @ 5 dbm 16 20 24 28 32 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) ip3 (dbm) -5 -4 -3 -2 -1 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) gain (db) -25 -20 -15 -10 -5 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) return loss (db) -20 -15 -10 -5 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c -40c frequency (ghz) return loss (db) 15 20 25 30 35 40 -10 -5 0 5 10 15 +25c +85c -40c pout (dbm) ip3 (dbm) -16 -14 -12 -10 -8 -6 -4 -2 0 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 s21 s11 s22 frequency (ghz) response (db)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 typical supply current vs. vdd r bias ? i dd (ma) vdd= 3v vdd= 5v 0 55 95 15 49 86 47 41 73 180 [1] 28 50 [1] r ecommended maximum r bias drain bias voltage (vdd) +6 vdc control voltage (vctl) +6 vdc rf i nput p ower ( rfi n) l na m ode bypass / f ail safe m ode +5 dbm +20 dbm channel temperature 150 c continuous p diss (t = 85 c) (derate 10.71 m w /c above 85 c) 0.70 w thermal r esistance (channel to ground paddle) 93.33 c/ w s torage temperature -65 to +150 c o perating temperature -40 to +85 c es d s ensitivity (hb m ) class 1a absolute maximum ratings l na m ode vctl = vdd = 3 to 5v bypass m ode vctl= 0v, vdd = 3 to 5v f ailsafe m ode vctl = vdd = n/c truth table ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s HMC669LP3 / 669lp3e v04.0709 gaas phemt mmic lna w/ failsafe bypass mode, 1700 - 2200 mhz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 7 HMC669LP3 / 669lp3e v04.0709 gaas phemt mmic lna w/ failsafe bypass mode, 1700 - 2200 mhz outline drawing n ot es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d ime n sio n s a re i n i nch es [ millime t ers ] 3. le ad sp ac i ng t oler anc e is n o n-cu m u l at i v e 4. p ad bu rr le ngth s ha ll b e 0.15mm m ax im u m . p ad bu rr h ei ght s ha ll b e 0.05mm m ax im u m . 5. p ackag e w a rp s ha ll n ot e xc ee d 0.05mm. 6. a ll g ro und le ad s and g ro und p add le m u s t b e sol d ere d to p cb rf g ro und. 7. refer to h i tt i t e a ppli cat io n n ot e for s ugg es t e d l and p att er n. p art number p ackage body m aterial l ead f inish msl r ating p ackage m arking [3] h m c669 lp 3 l ow s tress i njection m olded p lastic s n/ p b s older msl 1 [1] 669 xxxx h m c669 lp 3 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] 669 xxxx [1] m ax peak refow temperature of 235 c [2] m ax peak refow temperature of 260 c [3] 4-digit lot number xxxx package information
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 8 pin descriptions p in number f unction description i nterface s chematic 1, 2, 5, 8, 11, 12, 13, 15 n/c these pins are not connected internally; however, all data shown herein was measured with these pins connected to rf /dc ground externally. 3 rfi n this pin is dc coupled. o ff-chip dc blocking capacitor required. 4, 9 gnd these pins and the exposed ground paddle must be connected to rf /dc ground. 6 acg ac ground. attach bypass capacitor per application circuit. 7 res e xternal resistor pin for current control. s ee table for external resistor value vs. bias current data. 10 rfo ut this pin is matched to 50 o hms 14 vdd p ower s upply voltage pin. e xternal bypass capacitors required. 16 vctl control voltage pin for l na / bypass m odes. s etting voltage equal to vdd enables l na m ode. e xternal bypass capacitor required. HMC669LP3 / 669lp3e v04.0709 gaas phemt mmic lna w/ failsafe bypass mode, 1700 - 2200 mhz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 9 HMC669LP3 / 669lp3e v04.0709 gaas phemt mmic lna w/ failsafe bypass mode, 1700 - 2200 mhz application circuit
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 10 i tem description j1 - j2 p cb m ount sm a connector j3 - j4 dc p in c1 82 p f capacitor, 0402 p kg. c2 8200 p f capacitor, 0402 p kg. c3 10 n f capacitor, 0603 p kg. c4 1 f capacitor, 0603 p kg. c5 100 p f capacitor, 0603 p kg. r 1 15 o hm r esistor, 0402 p kg. r 2 0 o hm r esistor, 0402 p kg. u1 h m c669 lp 3( e ) amplifer p cb [2] 118911 e valuation board [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 evaluation pcb the circuit board used in the application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 121923 [1] HMC669LP3 / 669lp3e v04.0709 gaas phemt mmic lna w/ failsafe bypass mode, 1700 - 2200 mhz
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