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CSD16411Q3 www.ti.com slps206a ? august 2009 ? revised september 2010 n-channel nexfet ? power mosfets check for samples: CSD16411Q3 1 features product summary 2 ? ultra low qg and qgd v ds drain to source voltage 25 v ? low thermal resistance q g gate charge total (4.5v) 2.9 nc ? avalanche rated q gd gate charge gate to drain 0.7 nc ? pb free terminal plating v gs = 4.5v 12 m ? r ds(on) drain to source on resistance v gs = 10v 8 m ? ? rohs compliant v gs(th) threshold voltage 2 v ? halogen free ? son 3.3mm x 3.3mm plastic package ordering information device package media qty ship applications son 3.3 3.3 tape and CSD16411Q3 13-inch reel 2500 ? point-of-load synchronous buck converter plastic package reel for applications in networking, telecom and computing systems absolute maximum ratings ? optimized for control fet applications t a = 25 c unless otherwise stated value unit v ds drain to source voltage 25 v description v gs gate to source voltage +16 / ? 12 v the nexfet ? power mosfet has been designed continuous drain current, t c = 25 c 56 a i d to minimize losses in power conversion applications. continuous drain current (1) 14 a i dm pulsed drain current, t a = 25 c (2) 138 a top view p d power dissipation (1) 2.7 w t j , operating junction and storage ? 55 to 150 c t stg temperature range avalanche energy, single pulse e as 16 mj i d = 18a, l = 0.1mh, r g = 25 ? (1) r q ja = 47 c/w on 1in 2 cu (2 oz.) on 0.060 " thick fr4 pcb. (2) pulse width 300 m s, duty cycle 2% r ds(on) vs v gs gate charge 1 please be aware that an important notice concerning availability, standard warranty, and use in critical applications of texas instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 nexfet is a trademark of texas instruments. production data information is current as of publication date. copyright ? 2009 ? 2010, texas instruments incorporated products conform to specifications per the terms of the texas instruments standard warranty. production processing does not necessarily include testing of all parameters. dd d d d 5 g 6 s 7 s 8 s p0095-01 qg ? gate charge ? nc 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 v g ? gate v oltage ? v g003 i d = 10a v ds = 12.5v v gs ? gate to source v oltage ? v r ds(on) ? on-state resistance ? m w g006 0 5 10 15 20 25 30 0 2 4 6 8 10 12 t c = 125 c i d = 10a t c = 25 c
CSD16411Q3 slps206a ? august 2009 ? revised september 2010 www.ti.com electrical characteristics (t a = 25 c unless otherwise stated) parameter test conditions min typ max unit static characteristics bv dss drain to source voltage v gs = 0v, i d = 250 m a 25 v i dss drain to source leakage current v gs = 0v, v ds = 20v 1 m a i gss gate to source leakage current v ds = 0v, v gs = +16 / ? 12 100 na v gs(th) gate to source threshold voltage v ds = v gs , i d = 250 m a 1.7 2 2.3 v v gs = 4.5v, i d = 10a 12 15 m ? r ds(on) drain to source on resistance v gs = 10v, i d = 10a 8 10 m ? g fs transconductance v ds = 15v, i d = 10a 30 s dynamic characteristics c iss input capacitance 440 570 pf c oss output capacitance v gs = 0v, v ds = 12.5v, f = 1mhz 330 430 pf c rss reverse transfer capacitance 33 43 pf r g series gate resistance 0.8 1.6 ? q g gate charge total (4.5v) 2.9 3.8 nc q gd gate charge gate to drain 0.7 nc v ds = 12.5v, i d = 10a q gs gate charge gate to source 1.5 nc qg(th) gate charge at vth 0.9 nc q oss output charge v ds = 12.5v, v gs = 0v 6.5 nc t d(on) turn on delay time 5.3 ns t r rise time 7.8 ns v ds = 12.5v, v gs = 4.5v, i d = 10a r g = 2 ? t d(off) turn off delay time 6 ns t f fall time 3.1 ns diode characteristics v sd diode forward voltage i s = 10a, v gs = 0v 0.85 1 v q rr reverse recovery charge v dd = 12.5v, i f = 10a, di/dt = 300a/ m s 11.7 nc t rr reverse recovery time v dd = 12.5v, i f = 10a, di/dt = 300a/ m s 15.5 ns thermal characteristics (t a = 25 c unless otherwise stated) parameter min typ max unit r q jc thermal resistance junction to case (1) 3.5 c/w r q ja thermal resistance junction to ambient (1) (2) 59 c/w (1) r q jc is determined with the device mounted on a 1 inch square 2 oz. cu pad on a 1.5 1.5 in .060 inch thick fr4 board. r q jc is specified by design while r q ja is determined by the user ? s board design. (2) device mounted on fr4 material with 1 inch 2 of 2 oz. cu. 2 submit documentation feedback copyright ? 2009 ? 2010, texas instruments incorporated product folder link(s): CSD16411Q3
CSD16411Q3 www.ti.com slps206a ? august 2009 ? revised september 2010 max r q ja = 165 c/w max r q ja = 59 c/w when mounted on when mounted on minimum pad area of 2 1inch 2 of 2 oz. cu. oz. cu. typical mosfet characteristics (t a = 25 c unless otherwise stated) figure 1. transient thermal impedance copyright ? 2009 ? 2010, texas instruments incorporated submit documentation feedback 3 product folder link(s): CSD16411Q3 gate source drain m0161-02 t p C pulse durationCs z q ja C normalizedthermal impedance C c/w g012 0.0001 0.01 0.1 10 1 0.001 0.01 0.1 1 10 100 10k 0.001 1k 0.0001 0.1 0.05 0.01 0.5 0.02 0.3 single pulse duty cycle = t /t 1 2 r thja = 133 c/w (min cu) o t j = p x z q q ja ja x r j t 1 t 2 p gate source drain m0161-01
CSD16411Q3 slps206a ? august 2009 ? revised september 2010 www.ti.com typical mosfet characteristics (continued) (t a = 25 c unless otherwise stated) figure 2. saturation characteristics figure 3. transfer characteristics figure 4. gate charge figure 5. capacitance figure 6. threshold voltage vs. temperature figure 7. on resistance vs. gate voltage 4 submit documentation feedback copyright ? 2009 ? 2010, texas instruments incorporated product folder link(s): CSD16411Q3 t c ? case t emperature ? c 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 ?75 ?25 25 75 125 175 v gs(th) ? threshold v oltage ? v g005 i d = 250 m a v gs ? gate to source v oltage ? v 0 5 10 15 20 25 30 1.5 2.0 2.5 3.0 3.5 4.0 4.5 i d ? drain current ? a g002 v ds = 5v t c = ?55 c t c = 25 c t c = 125 c v ds ? drain to source v oltage ? v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 c ? capacitance ? nf g004 f = 1mhzv gs = 0v c rss = c gd c oss = c ds + c gd c iss = c gd + c gs qg ? gate charge ? nc 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 v g ? gate v oltage ? v g003 i d = 10a v ds = 12.5v v ds ? drain to source v oltage ? v 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d ? drain current ? a g001 v gs = 3v v gs = 4.5v v gs = 10v v gs = 3.5v v gs = 4v v gs ? gate to source v oltage ? v r ds(on) ? on-state resistance ? m w g006 0 5 10 15 20 25 30 0 2 4 6 8 10 12 t c = 125 c i d = 10a t c = 25 c
CSD16411Q3 www.ti.com slps206a ? august 2009 ? revised september 2010 typical mosfet characteristics (continued) (t a = 25 c unless otherwise stated) figure 8. on resistance vs. temperature figure 9. typical diode forward voltage figure 10. maximum safe operating area figure 11. single pulse unclamped inductive switching figure 12. maximum drain current vs. temperature copyright ? 2009 ? 2010, texas instruments incorporated submit documentation feedback 5 product folder link(s): CSD16411Q3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd ? source to drain v oltage ? v g008 t c = 25 c t c = 125 c 100 1 0.01 0.0001 0.001 0.1 10 i sd ? source to drain current ? a t c ? case t emperature ? c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ?75 ?25 25 75 125 175 normalized on-state resistance g007 i d = 10a v gs = 10v v ds ? drain to source voltage ? v g009 1k 10 0.01 1 100 i d ? drain current ? a 0.1 0.01 0.1 10 100 1 single pulser q ja = 133 c/w (min cu) 1s 10ms 100ms dc area limitedby r ds(on) 1ms t c ? case t emperature ? c 0 10 20 30 40 50 60 70 80 ?50 ?25 0 25 50 75 100 125 150 175 i d ? drain current ? a g011 t (av) ? t ime in a valanche ? ms g010 100 10 1 i (av) ? peak a valanche current ? a 0.01 0.1 10 100 1 t c = 25 c t c = 125 c
CSD16411Q3 slps206a ? august 2009 ? revised september 2010 www.ti.com mechanical data q3 package dimensions millimeters inches dim min nom max min nom max a 0.950 1.000 1.100 0.037 0.039 0.043 a1 0.000 0.000 0.050 0.000 0.000 0.002 b 0.280 0.340 0.400 0.011 0.013 0.016 c 0.150 0.200 0.250 0.006 0.008 0.010 d 3.200 3.300 3.400 0.126 0.130 0.134 d1 ? ? ? ? ? ? d2 1.650 1.750 1.800 0.065 0.069 0.071 e 3.200 3.300 3.400 0.126 0.130 0.134 e1 ? ? ? ? ? ? e2 2.350 2.450 2.550 0.093 0.096 0.100 e 0.650 typ 0.026 h 0.35 0.450 0.550 0.014 0.018 0.022 l 0.35 0.450 0.550 0.014 0.018 0.022 l1 ? ? ? ? ? ? q ? ? ? ? ? ? 6 submit documentation feedback copyright ? 2009 ? 2010, texas instruments incorporated product folder link(s): CSD16411Q3 m0142-01 d2 d l1 c 1 2 3 4 5 6 7 8 l h b e2 top view bottom view front view side view 5 6 7 8 1 2 3 4 a d e q a1 e e
CSD16411Q3 www.ti.com slps206a ? august 2009 ? revised september 2010 recommended pcb pattern for recommended circuit layout for pcb designs, see application note slpa005 ? reducing ringing through pcb layout techniques . q3 tape and reel information notes: 1. 10 sprocket hole pitch cumulative tolerance 0.2 2. camber not to exceed 1mm in 100mm, noncumulative over 250mm 3. material:black static dissipative polystyrene 4. all dimensions are in mm (unless otherwise specified) 5. thickness: 0.30 0.05mm 6. msl1 260 c (ir and convection) pbf reflow compatible copyright ? 2009 ? 2010, texas instruments incorporated submit documentation feedback 7 product folder link(s): CSD16411Q3 0.63 0.50 typ. 0.65 typ. 0.41 1 4 5 8 m0143-01 3.50 2.45 2.31 1 4 5 8 0.56 4.00 0.10 (see note 1) 2.00 0.05 3.60 3.60 1.30 1.75 0.10 m0144-01 8.00 0.10 12.00 +0.30 C0.10 5.50 0.05 ? 1.50 +0.10 C0.00
CSD16411Q3 slps206a ? august 2009 ? revised september 2010 www.ti.com revision history changes from original (august 2009) to revision a page ? the package marking information section ............................................................................................................................. 7 8 submit documentation feedback copyright ? 2009 ? 2010, texas instruments incorporated product folder link(s): CSD16411Q3
tape and reel information *all dimensions are nominal device package type package drawing pins spq reel diameter (mm) reel width w1 (mm) a0 (mm) b0 (mm) k0 (mm) p1 (mm) w (mm) pin1 quadrant CSD16411Q3 son dqg 8 2500 330.0 12.8 3.6 3.6 1.2 8.0 12.0 q1 package materials information www.ti.com 21-jan-2011 pack materials-page 1
*all dimensions are nominal device package type package drawing pins spq length (mm) width (mm) height (mm) CSD16411Q3 son dqg 8 2500 335.0 335.0 32.0 package materials information www.ti.com 21-jan-2011 pack materials-page 2
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