power transistors 1 ordering can be made by the common rank (pq rank h fe2 = 90 to 260) in the rank classification. (2sd1445a only) 2sd1445, 2sd1445a2sd1445, 2sd1445a 2sd1445, 2sd1445a2sd1445, 2sd1445a 2sd1445, 2sd1445a silicon npn epitaxial planar type for power amplification, power switching and low-voltage switching complementary to 2sb0948 ( 2 s b 9 48 ) and 2sb0948a ( 2 s b 9 4 8 a ) features ? low collector to emitter saturation voltage v ce(sat) ? high-speed switching ? satisfactory linearity of forward current transfer ratio h fe ? large collector current i c ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t c = 25 c 1: base 2: collector 3: emitter eiaj: sc-67 to-220f package unit: mm 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 note) * : rank classification rank q p h fe2 90 to 180 130 to 260 electrical characteristics t c = 25 c parameter symbol conditions min typ max unit collector cutoff 2sd1445 i cbo v cb = 40 v, i e = 0 50 a current 2sd1445a v cb = 50 v, i e = 0 50 emitter cutoff current i ebo v eb = 5 v, i c = 0 50 a collector to emitter 2sd1445 v ceo i c = 10 ma, i b = 0 20 v voltage 2sd1445a 40 forward current transfer ratio h fe1 v ce = 2 v, i c = 0.1 a 45 h fe2 * v ce = 2 v, i c = 3 a 90 260 collector to emitter saturation voltage v ce(sat) i c = 10 a, i b = 0.33 a 0.6 v base to emitter saturation voltage v be(sat) i c = 10 a, i b = 0.33 a 1.5 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 10 mhz 120 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 200 pf turn-on time t on i c = 3 a, i b1 = 0.1 a, i b2 = ? 0.1 a, 0.3 s storage time t stg v cc = 20 v 0.4 s fall time t f 0.1 s parameter symbol rating unit collector to base 2sd1445 v cbo 40 v voltage 2sd1445a 50 collector to 2sd1445 v ceo 20 v emitter voltage 2sd1445a 40 emitter to base voltage v ebo 5v peak collector current i cp 20 a collector current i c 10 a collector power t c = 25 cp c 40 w dissipation t a = 25 c2 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c
power transistors 2 2sd1445, 2sd1445a v be(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce v ce(sat) ? i c t on , t stg , t f ? i c area of safe operation (aso) 0 0 160 40 120 80 140 20 100 60 20 60 40 80 10 50 30 70 (1)t c =ta (2)with a 100 100 2mm al heat sink (3)without heat sink (p c =2.0w) (1) (2) (3) ambient temperature t a ( ?c ) collector power dissipation p c ( w ) 06 15 24 3 0 2 4 6 10 8 t c =25 ? c i b =100ma 90ma 80ma 70ma 60ma 50ma 40ma 30ma 20ma 10ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 30 10 3 1 0.3 0.1 0.01 0.03 0.1 0.3 1 3 10 i c /i b =20 t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.1 30 10 1 0.3 3 0.01 0.03 0.1 0.3 1 3 10 i c /i b =20 25 ? c 25 ? c t c =100 ? c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.1 30 10 1 0.3 3 1 3 10 30 100 300 1000 v ce =10v t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.1 1 10 100 1000 0.03 0.3 3 0.3 3 30 300 v ce =10v f=10mhz t c =25 ? c collector current i c ( a ) transition frequency f t ( mhz ) 0.01 0.03 0.1 0.3 1 3 10 30 100 05 4 3 2 1 pulsed t w =1ms duty cycle=1% i c /i b =30(i b1 = i b2 ) v cc =30v t c =25 ? c t stg t f t on collector current i c ( a ) switching time t on ,t stg ,t f ( s ) 0.01 0.03 13 0.1 0.3 1 3 10 30 100 10 30 100 300 1000 non repetitive pulse t c =25 ? c i cp i c t=10ms t=1ms dc 2sd1445 2sd1445a collector to emitter voltage v ce ( v ) collector current i c ( a )
power transistors 3 2sd1445, 2sd1445a r th(t) ? t 10 2 10 1 1 10 10 3 10 2 10 4 10 4 10 3 10 2 10 1 10 1 10 2 10 3 (1) (2) (1)without heat sink (2)with a 100 100 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ? c/w )
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