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bipolar analog integrated circuit m m m m PC8116GR 500 mhz, am/ask receiver ic preliminary data sheet document no. p12361ej2v0ds00 (2nd edition) date published october 1999 n cp(k) printed in japan ? 1997, 1999 the mark shows major revised points. description m PC8116GR is a silicon monolithic ic designed for am/ask receiver. this ic consists of mixer, oscillator, if amplifier, limitter amplifier, op amp., and builts in power save function and rssi function. the package is 20 pin ssop (shrink small outline package) suitable for high-density surface mount. features ? broadband operation : f rf = 100 to 500 mhz ? low power dissipation : 12.3 mw at v cc = 3 v, 23.5 mw at v cc = 5 v ? on-chip power save function : i p/s 1 m a ? packaged in 20 pin ssop suitable for high-density surface mount. ordering information part number package package style m PC8116GR-e1 20 pins plastic ssop (225mil) embossed tape 12 mm wide. 2.5 k/reel pin 1 indicates pull-out direction of tape *: for evaluation sample order, please contact your local nec office. (order name: m PC8116GR) please refer to quality grade on nec semiconductor devices (document number c11531e) published by nec corporation to know the specification of quality grade on the devices and its recommended applications. caution electro-static sensitive device the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information.
preliminary data sheet p12361ej2v0ds00 2 m m m m PC8116GR inetrnal block diagram and pin configuration (top view) 1 rf in 2 mixer out 3 if amp in 4 bypass + 5 bypass - 6 rssi 7 v cc 8 gnd 9 op amp + 10 20 19 18 17 16 15 14 13 12 11 op amp - gnd osc-c osc-e power save if out gnd lim in bypass + bypass - op amp out if amp. op amp. limitter amp. rssi p/s
preliminary data sheet p12361ej2v0ds00 3 m m m m PC8116GR pin explanation pin no symbol pin volt typ. (v) function and explanation equivalent circuit 1 mix in 1.95 rf signal input pin. 2 mix out 2.1 output pin of mixer. this pin is assigned for emitter follower output with low-impedance 3 if in 2.38 if signal input pin. 4 bypass + (if) 2.38 bypass pin for if amplifier. capacitor for filter should be connected between 4 pin and 5 pin. 5 bypass - (if) 2.38 6 rssi out 0.9 rssi signal output pin. 7v cc 3.0 power supply pin. 8 gnd 0.0 ground pin for op-amp. 9 0p amp + 2.1 input pin of op-amp. in case of single input, 9 pin or 10 pin should be grounded through capacitor. 10 0p amp - 2.1 v cc 6 v cc 9 10 11 1 k 2 1 v cc 3 v cc 4 5
preliminary data sheet p12361ej2v0ds00 4 m m m m PC8116GR pin no symbol pin volt typ. (v) function and explanation equivalent circuit 11 op amp out 0.77 output pin of op-amp. this pin is assigned for emitter follower output. 12 bypass - 2.38 bypass pin for op-amp. capacitor for filter should be connected between 12 pin and 13 pin. 13 bypass + 2.38 14 lim in 2.38 input pin of limitter amplifier. 15 gnd 0.0 ground pin for limitter amp., rssi, and regulator. 16 if out 1.55 if signal output pin. generally, crystal filter is connected between 16 pin and 14 pin. 17 power save 0 to 3 power save control pin can be controlled on/sleep state with bias as follows; 18 osc-e 1.31 oscillator signal input pins. oscillator circuit should be connected between 18 pin and 19 pin. 19 osc-c 3.0 20 gnd 0.0 ground pin for mixer, if amplifier, and oscillator. v p/s (v) state v cc on gnd sleep v cc 13 12 14 v cc 16 230 17 v cc 19 18 v cc 11 1 k
preliminary data sheet p12361ej2v0ds00 5 m m m m PC8116GR absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol test condition rating unit supply voltage v cc 6.0 v power dissipation p d t a = 85 c *1 430 mw operation temperature range t a - 40 to +85 c storage temperature range t stg - 55 to +150 c *1 mounted on 50 50 1.6 mm epoxy glass board. recommended operating range parameter symbol min. typ. max. unit supply voltage v cc 2.7 3.0 5.5 v operation temperature range t a - 40 +25 +85 c electrical characteristics (t a = 25 c, v cc = vp/s = 3 v) parameter symbol min. typ. max. unit test conditions total block circuit current i cc 2.6 4.1 5.7 ma no input signal rssi sensitivity rssisen -- 95 - 90 dbm f rf = 315 mhz, f osc = 304.3 mhz, p osc = - 10 dbm, d v rssi 3 3 mv/db *2 powersave current ip/s -- 1.0 m a 17 pin = gnd *2 mixer block rf input frequency range bw rf 100 - 500 mhz f if = 10.7 mhz, f rf > f osc , - 3 db down *3 lo input frequency range bw lo 100 - 500 mhz f if = 10.7 mhz, f rf > f osc , - 3 db down *3 mixer gain g mix 81114dbf rf = 315 mhz, p rf = - 50 dbm, f osc = 304.3mhz, p osc = - 10 dbm, input:lc matching *2 if amp block if output frequency range bw if 0.3 - 15 mhz pin = - 80 dbm, - 3db down *3 op amp block op amp input frequency range bw op 1 -- mhz pin = - 50 dbm, - 3db down *3 op amp gain g op 50 57 - db fin = 200 khz, pin = - 50 dbm *3
preliminary data sheet p12361ej2v0ds00 6 m m m m PC8116GR standard characteristics (t a = 25 c, v cc = vp/s = 3 v; *2 ) parameter symbol value for reference unit test condition if amplifier gain g if 55 db fin = 10.7 mhz, pin = - 100 dbm, input:lc matching *2 rssi linearity d rssi/ d p rf 3dbf rf = 315 mhz, f osc = 304.3 mhz, p osc = - 10 dbm, p rf = - 30 to - 90 dbm *2 lo to rf isolation lo-rfiso - 50 dbm f osc = 304.3 mhz/ - 10 dbm *2 rf to lo isolation rf-loiso - 50 dbm f rf = 315 mhz/ - 30 dbm *2 *2 by measurement circuit 1 *3 by measurement circuit 2
preliminary data sheet p12361ej2v0ds00 7 m m m m PC8116GR typical characteristics (t a = 25 c) 7 v cc vs. i cc v cc - supply voltage - v i cc - circuit current - ma 6 5 4 3 2 1 0 0123456 no input signal t a = 85 c t a = 25 c t a = - 40 c - 10 pin vs. pout pin - input power -dbm pout - outout power - dbm v cc = 3 v f rf = 315 mhz f osc = 304.3 mhz p osc = - 10 dbm input:lc matching - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 60 - 40 - 20 0 p osc vs. pout p osc - osc input power - dbm p out - output power - dbm - 30 - 40 - 50 - 60 - 70 - 80 - 90 - 60 - 50 - 40 - 30 - 20 - 10 0 70 f in vs. gain (op amp) fin - input frequency - mhz gain - db v cc = 3 v f rf = 315 mhz f osc = 304.3 mhz p rf = - 50 dbm input:lc matching 60 50 40 30 20 0 10 0.01 0.1 1 10 v cc = 3 v pin = - 50 dbm
preliminary data sheet p12361ej2v0ds00 8 m m m m PC8116GR standard characteristics (t a = 25 c) 2.8 p rf vs. rssi voltage p rf - input power - dbm pin = - 60 dbm op amplifier output pin = - 90 dbm rssi voltage - v 2.6 2.4 2.2 2.0 - 120 - 100 - 80 - 60 - 40 - 20 0 v cc = 3 v f rf = 315 mhz f osc = 304.3 mhz p osc = - 10 dbm input:lc matching 4.8 p rf vs. rssi voltage p rf - input power - dbm rssi voltage - v 4.6 4.4 4.2 4.0 - 120 - 100 - 80 - 60 - 40 - 20 0 v cc = 5 v f rf = 315 mhz f osc = 304.3 mhz p osc = - 10 dbm input:lc matching f rf = 315 mhz f osc = 304.3 mhz am : 1 khz, 90 % v cc = 3 v 500 mv/div 200 sec/div test conditions m
preliminary data sheet p12361ej2v0ds00 9 m m m m PC8116GR measurement circuit1 1 2 3 4 5 6 7 8 9 10 10 nf 10 nf 100 nf 3.3 nf 3.3 nf 3.3 nf 39 n 270 2 pf 56 pf 330 3.3 nf 100 nf 1.8 nf 20 19 18 17 16 15 14 13 12 11 if amp. op amp. limitter amp. rssi p/s 10 k 1 f m 1.8 nf 3.3 nf 3.3 nf 3.3 nf 3.3 nf op amp out 330 1.8 nf 330 pf 330 pf 1 f m sg1 100 k w 100 k w band pass filter 10.7 mhz spectrum analyzer power save sg2 v cc 10.7 mhz v cc v * : measured by high-impedance probe (1 mhz, 1.5pf) 17 pin: gnd, 11 pin: open in case of measurement of powersave current measurement circuit2 1 2 3 4 5 6 7 8 9 10 100 nf 3.3 nf 3.3 nf 100 nf 50 1000 pf 3.3 nf 100 nf 50 20 19 18 17 16 15 14 13 12 11 if amp. op amp. limitter amp. rssi p/s 100 nf 1.8 nf 3.3 nf 3.3 nf 3.3 nf 100 nf 1000 pf 1 f m sg1 sg3 sg4 100 k 100 k spectrum analyzer oscilloscope spectrum analyzer power save sg2 v cc v cc * : measured by high-impedance probe (1 mhz, 1.5pf)
preliminary data sheet p12361ej2v0ds00 10 m m m m PC8116GR application circuit example (@f rf = 433.6 mhz) 1 2 3 4 5 6 7 8 9 10 3.3 nf 200 nf 100 nf 3.3 nf 3.3 nf 1.4 to 3.0 pf 56 pf 3.3 nf 200 nf 20 19 18 17 16 15 14 13 12 11 if amp. op amp. limitter amp. rssi p/s 3.3 nf 3.3 nf 3.3 nf op amp out 56 1 nf 100 nf 7 pf 7 pf 47 nh 100 nf 1000 pf 100 k 100 k 10 k w crystal filter 10.7 mhz power save v cc 10.7 mhz rssi v cc 23 nh 10 pf rf in 1.2 k saw 423.2 m the application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
preliminary data sheet p12361ej2v0ds00 11 m m m m PC8116GR illustration of the application circuit assembled on evaluation board 3.3 n 3.3 n 3.3 n 23 n 10.7 m bpf 56 p 10 p 100 n 47 n 3.3 n 3.3 n 3.3 n 3.3 n 100 n 100 k 100 k 10 k 100 n 1 n 56 10.7 m bpf 1.4 to 3 p sam 1.2 k 7 p 7 p 1000 p 200 n 200 n v cc v cc power save notes *1) *2) *3) shows through holes pattern should be removed on this application shows short circuited strip for ground
preliminary data sheet p12361ej2v0ds00 12 m m m m PC8116GR package dimensions 20 pin plastic ssop (225 mil) (unit: mm) 20 detail of lead end 1.8 max. 3? +7? C3? 0.65 0.10 m 0.15 0.5 0.2 11 110 6.7 0.3 1.5 0.1 0.1 0.1 0.22 +0.10 C0.05 0.575 max. 0.15 +0.10 C0.05 6.4 0.2 4.4 0.1 1.0 0.2 note each lead centerline is located within 0.10 mm of its true position (t.p.) at maximum material condition.
preliminary data sheet p12361ej2v0ds00 13 m m m m PC8116GR recommended soldering conditions the following conditions (see table below) must be met when soldering this product. please consult with our sales officers in case other soldering process is used or in case soldering is done under different conditions. for details of recommended soldering conditions for surface mounting, refer to information document semiconductor device mounting technology manual (c10535e). m m m m PC8116GR soldering process soldering conditions symbol infrared ray reflow peak packages surface temperature: 235 c or below, reflow time: 30 seconds or below (210 c or higher), number of reflow process: 3, exposure limit note : none ir35-00-3 vps peak packages surface temperature: 215 c or below, reflow time: 40 seconds or below (200 c or higher), number of reflow process: 3, exposure limit note : none vp15-00-3 wave soldering solder temperature: 260 c or below, reflow time: 10 seconds or below, number of reflow process: 1, exposure limit note : none ws60-00-1 partial heating method terminal temperature: 300 c or below, flow time: 3 seconds or below, exposure limit note : none note exposure limit before soldering after dry-pack package is opened. storage conditions: 25 c and relative humidity at 65 % or less. caution do not apply more than single process at once, except for partial heating method.
preliminary data sheet p12361ej2v0ds00 14 m m m m PC8116GR [memo]
preliminary data sheet p12361ej2v0ds00 15 m m m m PC8116GR [memo]
m m m m PC8116GR nesat (nec silicon advanced technology) is a trademark of nec corporation. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. ? no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. ? nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. ? descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. nec corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. ? while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. ? nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. m7 98. 8

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