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? power management in notebook computer, portable equipment and battery powered systems.

apm2306 handling code temp. range package code package code a : sot-23 operating junction temp. range c : -55 to 150c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm2306 a : m06x xxxxx - date code lead free code top view of sot-23 n-channel mosfet ? 30v/3.5a , r ds(on) =42m ? (typ.) @ v gs =10v r ds(on) =70m ? (typ.) @ v gs =5v ? super high dense cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? lead free available (rohs compliant) d g s g s d note: anpec lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with rohs and compatible with both snpb and lead-free soldiering operations. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j std-020c for msl classifica- tion at lead-free peak reflow temperature.
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(t a = 25 c unless otherwise noted) !
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(t a = 25 c unless otherwise noted) symbol parameter rating unit v dss drain-source voltage 30 v gss gate-source voltage 20 v i d * continuous drain current 3.5 i dm * 300 s pulsed drain current v gs =10v 14 a i s * diode continuous forward current 1.3 a t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c t a =25 c 0.83 p d * maximum power dissipation t a =100 c 0.3 w r ja * thermal resistance-junction to ambient 150 c/w note: *surface mounted on 1in 2 pad area, t 10sec. apm2306a symbol parameter test condition min. typ. max. unit static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =250 a 30 v v ds =24v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 a v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 1 1.5 2 v i gss gate leakage current v gs =20v, v ds =0v 100 na v gs =10v, i ds =3.5a 42 65 r ds(on) a drain-source on-state resistance v gs =5v, i ds =2.8a 70 90 m ? v sd a diode forward voltage i sd =1.25a, v gs =0v 0.8 1.3 v gate charge characteristics b q g total gate charge 12.5 16 q gs gate-source charge 2.4 q gd gate-drain charge v ds =15v, v gs =10v, i ds =3.5a 1.3 nc
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$"%& (t a = 25 c unless otherwise noted) apm2306a symbol parameter test condition min. typ. max. unit dynamic characteristics b r g gate resistance v gs =0v,v ds =0v,f=1mhz 1.5 ? c iss input capacitance 400 c oss output capacitance 80 c rss reverse transfer capacitance v gs =0v, v ds =25v, frequency=1.0mhz 45 pf t d(on) turn-on delay time 10 19 t r turn-on rise time 8 15 t d(off) turn-off delay time 19 35 t f turn-off fall time v dd =15v, r l =15 ? , i ds =1a, v gen =10v, r g =6 ? 6.2 12 ns notes: a : pulse test ; pulse width 300 s, duty cycle 2%. b : guaranteed by design, not subject to production testing.
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- 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 150 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 '(
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i d - drain current (a) drain current t j - junction temperature ( c) safe operation area v ds - drain - source voltage (v) thermal transient impedance square wave pulse duration (sec) power dissipation p tot - power (w) t j - junction temperature ( c) i d - drain current (a) 0 20406080100120140160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t a =25 o c 0 20406080100120140160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t a =25 o c,v g =10v 0.01 0.1 1 10 100 0.01 0.1 1 10 50 rds(on) limit 1s t a =25 o c 10ms 300 s 1ms 100ms dc normalized transient thermal resistance
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& r ds(on) - on - resistance (m ? ) drain-source on resistance i d - drain current (a) t j - junction temperature ( c) gate threshold voltage v ds - drain - source voltage (v) i d - drain current (a) output characteristics transfer characteristics v gs - gate - source voltage (v) i d - drain current (a) normalized threshold voltage '(
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$"%& 012345 0 2 4 6 8 10 12 14 3v 4v v gs = 5, 6, 7, 8, 9, 10v 0246810 0 20 40 60 80 100 120 v gs =5v v gs =10v 01234567 0 2 4 6 8 10 12 14 t j =-55 o c t j =25 o c t j =125 o c -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 ?
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. v ds - drain - source voltage (v) drain-source on resistance normalized on resistance t j - junction temperature ( c) c - capacitance (pf) v sd - source - drain voltage (v) source-drain diode forward i s - source current (a) capacitance gate charge q g - gate charge (nc) v gs - gate - source voltage (v) '(
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$"%& -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 42m ? v gs = 10v i ds = 3.5a 0.0 0.4 0.8 1.2 1.6 2.0 1 10 20 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 100 200 300 400 500 600 frequency=1mhz crss coss ciss 0 2 4 6 8 10 12 14 0 2 4 6 8 10 v ds = 15v i d = 3.5a
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sot-23 d e h e a a1 l c b 3 2 1 millimeters inches dim min. max. min. max. a 1.00 1.30 0.039 0.051 a1 0.00 0.10 0.000 0.004 b 0.35 0.51 0.014 0.020 c 0.10 0.25 0.004 0.010 d 2.70 3.10 0.106 0.122 e 1.40 1.80 0.055 0.071 e 1.90/2.1 bsc. 0.075/0.083 bsc. h 2.40 3.00 0.094 0.118 l 0.37 0.015
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0 terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb), 100%sn lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p )" (ir/convection or vpr reflow) "

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profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat temperature min (tsmin) temperature max (tsmax) time (min to max) (ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: temperature (t l ) time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak/classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface.
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1 test item method description solderability mil-std-883d-2003 245 c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100% rh, 121 c tst mil-std 883d-1011.9 -65 c ~ 150 c, 200 cycles "
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table 2. pb-free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350-2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb entectic process ? package peak reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 <2.5 mm 240 +0/-5 c 225 +0/-5 c 2.5 mm 225 +0/-5 c 225 +0/-5 c "

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!% " * , anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 ", '
application carrier width cover tape width devices per reel sot- 23 8 5.3 3000 "
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+ a j b t2 t1 c application a b c j t1 t2 w p e 178 1 60 1.0 12.0 2.5 0.15 9.0 0.5 1.4 8.0+ 0.3 - 0.3 4.0 1.75 f d d1 po p1 ao bo ko t sot-23 3.5 0.05 1.5 +0.1 0.1min 4.0 2.0 0.05 3.1 3.0 1.3 0.2 0.03 (mm)

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