inchange semiconductor isc product specification isc silicon npn power transistor 2SD380 description high breakdown voltage- : v cbo = 1500v (min) high switching speed applications designed for line-operated horiz ontal deflection output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ces collector-emitter voltage 1500 v v ceo collector-emitter voltage 700 v v ebo emitter-base voltage 5 v i c collector current- continuous 5 a i cm collector current-peak 7 a i bm base current-peak 3.5 a p c collector power dissipation @ t c 90 50 w t j junction temperature 130 t stg storage temperature range -65~130 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD380 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 1a b 10 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1a b 1.6 v v cb = 750v ; i e = 0 100 a i cbo collector cutoff current v cb = 1500v ; i e = 0 1 ma h fe dc current gain i c = 5a ; v ce = 10v 5 15 t f fall time 0.9 s t stg storage time i c = 5a, i b end = 1.5a, l b = 5 h 11 s isc website www.iscsemi.cn 2
|
