km616v4000c, KM616U4000C family cmos sram revision 0.11 june 1998 1 preliminary document title 256kx16 bit low power and low voltage cmos static ram revision history revision no 0.0 0.1 0.11 remark advance preliminary history initial draft revised - speed bin change commercial : 70/85ns ? 70/85/100ns industrial : 85/100ns ? 70/85/100ns - dc characteristics change i cc : 5ma at read/write ? 4ma at read i cc1 : 5ma ? 6ma i cc2 : 50ma ? 45ma i sb : 0.5ma ? 0.3ma i sb1 : 10 m a ? 15 m a for commercial parts errata correction draft date january 13, 1998 june 12, 1998 august 13, 1998 the attached datasheets are provided by samsung electronics. samsung electronics co., ltd. reserve the right to change the speci fications and products. samsung electronics will answer to your questions about device. if you have any questions, please contact the samsung branch offices.
km616v4000c, KM616U4000C family cmos sram revision 0.11 june 1998 2 preliminary 256kx16 bit low power and low voltage cmos static ram general description the km616v4000c and KM616U4000C families are fabricated by samsung s advanced cmos process technology. the families support various operating temperature ranges and have various package types for user flexibility of system design. the families also support low data retention voltage for battery back-up operation with low data retention current. features process technology : tft organization : 256k x16 power supply voltage km616v4000c family : 3.0~3.6v KM616U4000C family : 2.7~3.3v low data retention voltage : 2v(min) three state output and ttl compatible package type : 44-tsop2-400f/r pin description name function name function cs chip select input vcc power oe output enable input vss ground we write enable input lb lower byte (i/o 1~8 ) a 0 ~a 17 address inputs ub upper byte (i/o 9~16 ) i/o 1 ~i/o 16 data input/output n.c no connection product family 1. the parameter is measured with 30pf test load. product family operating temperature vcc range speed(ns) power dissipation pkg type standby (i sb1 , max) operating (i cc2 , max) km616v4000cl-l km616v4000cli-l commercial(0~70 c) 3.0~3.6v 70 1) /85/100 15 m a 45ma 44-tsop2-f/r industrial(-40~85 c) 3.0~3.6v 70 1) /85/100 20 m a KM616U4000Cl-l KM616U4000Cli-l commercial(0~70 c) 2.7~3.3v 70 1) /85/100 15 m a industrial(-40~85 c) 2.7~3.3v 70 1) /85/100 20 m a a4 a3 a2 a1 a0 cs i/oi i/o2 i/o3 i/o4 vcc vss i/o5 i/o6 i/o7 i/o8 we a17 a16 a15 a14 a5 a6 a7 oe ub lb i/o16 i/o15 i/o14 i/o13 vss vcc i/o12 i/o11 i/o10 i/o9 n.c a8 a9 a10 44-tsop2 forward 44-tsop2 reverse 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 a5 a6 a7 oe ub lb i/o16 i/o15 i/o14 i/o13 vss vcc i/o12 i/o11 i/o10 i/o9 n.c a8 a9 a10 a11 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 a13 a12 a11 a12 a4 a3 a2 a1 a0 cs i/oi i/o2 i/o3 i/o4 vcc vss i/o5 i/o6 i/o7 i/o8 we a17 a16 a15 a14 a13 samsung electronics co., ltd. reserves the right to change products and specifications without notice. functional block diagram clk gen. row select a5 a6 a7 a8 a9 a11 a10 a0 a1 a2 a3 a4 a13 a14 a15 we oe ub cs i/o 1 ~i/o 8 a16 data cont data cont data cont lb i/o 9 ~i/o 16 vcc vss a17 a12 precharge circuit. memory array 1024 rows 256 16 columns i/o circuit column select control logic
km616v4000c, KM616U4000C family cmos sram revision 0.11 june 1998 3 preliminary product list commercial temp product(0~70 c) industrial temp products(-40~85 c) part name function part name function km616v4000clt-7l km616v4000clt-8l km616v4000clt-10l km616v4000clr-7l km616v4000clr-8l km616v4000clr-10l KM616U4000Clt-7l KM616U4000Clt-8l KM616U4000Clt-10l KM616U4000Clr-7l KM616U4000Clr-8l KM616U4000Clr-10l 44-tsop2-f, 70ns, 3.3v, ll 44-tsop2-f, 85ns, 3.3v, ll 44-tsop2-f, 100ns, 3.3v, ll 44-tsop2-r, 70ns, 3.3v, ll 44-tsop2-r, 85ns, 3.3v, ll 44-tsop2-r, 100ns, 3.3v, ll 44-tsop2-f, 70ns, 3.0v, ll 44-tsop2-f, 85ns, 3.0v, ll 44-tsop2-f, 100ns, 3.0v, ll 44-tsop2-r, 70ns, 3.0v, ll 44-tsop2-r, 85ns, 3.0v, ll 44-tsop2-r, 100ns, 3.0v, ll km616v4000clti-7l km616v4000clti-8l km616v4000clti-10l km616v4000clri-7l km616v4000clri-8l km616v4000clri-10l KM616U4000Clti-7l KM616U4000Clti-8l KM616U4000Clti-10l KM616U4000Clri-7l KM616U4000Clri-8l KM616U4000Clri-10l 44-tsop2-f, 70ns, 3.3v, ll 44-tsop2-f, 85ns, 3.3v, ll 44-tsop2-f, 100ns, 3.3v, ll 44-tsop2-r, 70ns, 3.3v, ll 44-tsop2-r, 85ns, 3.3v, ll 44-tsop2-r, 100ns, 3.3v, ll 44-tsop2-f, 70ns, 3.0v, ll 44-tsop2-f, 85ns, 3.0v, ll 44-tsop2-f, 100ns, 3.0v, ll 44-tsop2-r, 70ns, 3.0v, ll 44-tsop2-r, 85ns, 3.0v, ll 44-tsop2-r, 100ns, 3.0v, ll absolute maximum ratings 1) 1. stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. functional oper ation should be restricted to recommended operating condition. exposure to absolute maximum rating conditions for extended periods may affect r eliability. item symbol ratings unit remark voltage on any pin relative to vss v in ,v out -0.5 to v cc +0.5 v - voltage on vcc supply relative to vss v cc -0.3 to 4.6 v - power dissipation p d 1.0 w - storage temperature t stg -65 to 150 c - operating temperature t a 0 to 70 c km616v4000c,KM616U4000C -40 to 85 c km616v4000ci,KM616U4000Ci functional description 1. x means don t care. (must be in low or high state) cs oe we lb ub i/o 1~8 i/o 9~16 mode power h x 1) x 1) x 1) x 1) high-z high-z deselected standby l h h x 1) x 1) high-z high-z output disabled active l x 1) x 1) h h high-z high-z output disabled active l l h l h dout high-z lower byte read active l l h h l high-z dout upper byte read active l l h l l dout dout word read active l x 1) l l h din high-z lower byte write active l x 1) l h l high-z din upper byte write active l x 1) l l l din din word write active
km616v4000c, KM616U4000C family cmos sram revision 0.11 june 1998 4 preliminary recommended dc operating conditions 1) note: 1. commercial product : t a =0 to 70 c, otherwise specified industrial product : t a =-40 to 85 c, otherwise specified 2. overshoot : v cc +2.0v in case of pulse width 30ns 3. undershoot : -2.0v in case of pulse width 30ns 4. overshoot and undershoot are sampled, not 100% tested. item symbol product min typ max unit supply voltage vcc km616v4000c family KM616U4000C family 3.0 2.7 3.3 3.0 3.6 3.3 v ground vss all family 0 0 0 v input high voltage v ih km616v4000c, KM616U4000C family 2.2 - vcc+0.3 2) v input low voltage v il km616v4000c, KM616U4000C family -0.3 3) - 0.6 v capacitance 1) (f=1mhz, t a =25 c) 1. capacitance is sampled, not 100% tested item symbol test condition min max unit input capacitance c in v in =0v - 8 pf input/output capacitance c io v io =0v - 10 pf dc and operating characteristics 1. industrial product = 20 m a item symbol test conditions min typ max unit input leakage current i li v il =vss to vcc -1 - 1 m a output leakage current i lo cs =v ih or oe =v ih or we =v il v io =vss to vcc -1 - 1 m a operating power supply current i cc i io =0ma, cs =v il , v in =v il or v ih , read - - 4 ma average operating current i cc1 cycle time=1 m s, 100% duty, i io =0ma cs 0.2v,v in 0.2v or v in 3 vcc-0.2v - - 6 ma i cc2 cycle time=min, 100% duty, i io =0ma, cs =v il, v in =v ih or v il - - 45 ma output low voltage v ol i ol =2.1ma - - 0.4 v output high voltage v oh i oh =-1.0ma 2.2 - - v standby current(ttl) i sb cs =v ih , other inputs = v il or v ih - - 0.3 ma standby current(cmos) i sb1 cs 3 vcc-0.2v, other inputs=0~vcc - - 15 1) m a
km616v4000c, KM616U4000C family cmos sram revision 0.11 june 1998 5 preliminary c l 1 ) 1.including scope and jig capacitance ac operating conditions test conditions ( test load and input/output reference) input pulse level : 0.4 to 2.2v input rising and falling time : 5ns input and output reference voltage :1.5v output load(see right) : c l =100pf+1ttl c l =30pf+1ttl data retention characteristics 1. industrial product = 20 m a item symbol test condition min typ max unit vcc for data retention v dr cs 3 vcc-0.2v 2.0 - 3.6 v data retention current i dr vcc=3.0v, cs 3 vcc-0.2v - 0.5 15 1) m a data retention set-up time t sdr see data retention waveform 0 - - ms recovery time t rdr 5 - - ac characteristics (km616v4000c family : vcc=3.0~3.6v, KM616U4000C family : vcc=2.7~3.3v commercial product :t a =0 to 70 c, industrial product : t a =-40 to 85 c) parameter list symbol speed bins units 70ns 85ns 100ns min max min max min max read read cycle time t rc 70 - 85 - 100 - ns address access time t aa - 70 - 85 - 100 ns chip select to output t co - 70 - 85 - 100 ns output enable to valid output t oe - 35 - 40 - 50 ns lb , ub valid to data output t ba - 35 - 40 - 50 ns chip select to low-z output t lz 10 - 10 - 10 - ns output enable to low-z output t olz 5 - 5 - 5 - ns lb , ub enable to low-z output t blz 5 - 5 - 5 - ns output hold from address change t oh 10 - 10 - 15 - ns chip disable to high-z output t hz 0 25 0 25 0 30 ns oe disable to high-z output t ohz 0 25 0 25 0 30 ns lb , ub disable to high-z output t bhz 0 25 0 25 0 30 ns write write cycle time t wc 70 - 85 - 100 - ns chip select to end of write t cw 60 - 70 - 80 - ns address set-up time t as 0 - 0 - 0 - ns address valid to end of write t aw 60 - 70 - 80 - ns write pulse width t wp 55 - 60 - 70 - ns write recovery time t wr 0 - 0 - 0 - ns write to output high-z t whz 0 25 0 25 0 30 ns data to write time overlap t dw 30 - 35 - 40 - ns data hold from write time t dh 0 - 0 - 0 - ns end write to output low-z t ow 5 - 5 - 5 - ns lb , ub valid to end of write t bw 60 - 70 - 80 - ns
km616v4000c, KM616U4000C family cmos sram revision 0.11 june 1998 6 preliminary address data out previous data valid data valid timming diagrams timing waveform of read cycle(1) (address controlled , cs = oe =v il , we =v ih , ub or/and lb =v il ) timing waveform of read cycle(2) ( we =v ih ) data valid high-z t rc cs address ub , lb oe data out t aa t rc t oh t oh t aa t co t ba t oe t olz t blz t lz t ohz t bhz t hz notes (read cycle) 1. t hz and t ohz are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. at any given temperature and voltage condition, t hz (max.) is less than t lz (min.) both for a given device and from device to device interconnection.
km616v4000c, KM616U4000C family cmos sram revision 0.11 june 1998 7 preliminary timing waveform of write cycle(1) ( we controlled) address cs data undefined ub , lb we data in data out timing waveform of write cycle(2) ( cs controlled) address cs data valid ub , lb we data in data out high-z high-z t wc t cw(2) t wr(4) t aw t bw t wp(1) t as(3) t dh t dw t whz t ow t wc t cw(2) t aw t bw t wp(1) t dh t dw t wr(4) high-z high-z data valid t as(3)
km616v4000c, KM616U4000C family cmos sram revision 0.11 june 1998 8 preliminary address cs data valid ub , lb we data in data out high-z high-z timing waveform of write cycle(3) ( ub , lb controlled) notes (write cycle) 1. a wri t e occurs during the overlap(t wp ) of low cs and low we . a write begins when cs goes low and we goes low with asserting ub or lb for single byte operation or simultaneously asserting ub and lb for double byte operation. a write ends at the earliest transi- tion when cs goes high and we goes high. the t wp is measured from the beginning of write to the end of write. 2. t cw is measured from the cs going low to end of write. 3. t as is measured from the address valid to the beginning of write. 4. t wr is measured from the end or write to the address change. t wr applied in case a write ends as cs or we going high. t wc t cw(2) t bw t wp(1) t dh t dw t wr(4) t aw data retention wave form cs controlled v cc 3.0/2.7v 2.2v v dr cs gnd data retention mode cs 3 v cc - 0.2v t sdr t rdr t as(3)
km616v4000c, KM616U4000C family cmos sram revision 0.11 june 1998 9 preliminary unit : millimeter(inch) package dimensions 44 pin thin small outline package type ii (400r) 0 . 0 0 2 #1 0 . 0 5 #22 #44 #23 0.35 0.10 0.014 0.004 0.80 0.0315 m i n . 0.047 1.20 max. 0.741 18.81 max. 18.41 0.10 0.725 0.004 11.76 0.20 0.463 0.008 + 0 . 1 0 - 0 . 0 5 0.50 + 0 . 0 0 4 - 0 . 0 0 2 0 . 1 5 0 . 0 0 6 0.020 1 0 . 1 6 0 . 4 0 0 0.10 0.004 0~8 0.45 ~0.75 0.018 ~ 0.030 0.25 ( ) 0.010 ( ) 0.805 0.032 ( ) max 1.00 0.10 0.039 0.004 44 pin thin small outline package type ii (400f) 0 . 0 0 2 #1 0 . 0 5 #22 #44 #23 0.35 0.10 0.014 0.004 0.80 0.0315 m i n . 0.047 1.20 max. 0.741 18.81 max. 18.41 0.10 0.725 0.004 11.76 0.20 0.463 0.008 + 0 . 1 0 - 0 . 0 5 0.50 + 0 . 0 0 4 - 0 . 0 0 2 0 . 1 5 0 . 0 0 6 0.020 1 0 . 1 6 0 . 4 0 0 0.10 0.004 0~8 0.45 ~0.75 0.018 ~ 0.030 0.25 ( ) 0.010 ( ) 0.805 0.032 ( ) max 1.00 0.10 0.039 0.004
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