1 - 2 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m 600 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c20a i dm t c = 25 c, pulse width limited by t jm 80 a i ar t c = 25 c20a e ar t c = 25 c30mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 ad 6 g to-268 4 g to-247 ad (ixfh) g = gate d = drain s = source tab = drain (tab) 98549a (6/99) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = a 600 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 0.35 pulse test, t 300 s, duty cycle d 2 % to-268 (ixft) case style (tab) g s hiperfet tm power mosfets q-class features ? ixys advanced low gate charge process international standard packages low gate charge and capacitance - easier to drive - faster switching low r ds (on) unclamped inductive switching (uis) rated molding epoxies meet ul 94 v-0 flammability classification advantages easy to mount space savings high power density advanced technical information n-channel enhancement mode avalanche rated, high dv/dt gate charge and capacitances ixfh 20n60q v dss = 600 v ixft 20n60q i d25 = 20 a r ds(on) = 0.35 t rr 250ns ixys reserves the right to change limits, test conditions, and dimensions.
2 - 2 ? 2000 ixys all rights reserved ixfh 20n60q ixft 20n60q symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 10 24 s c iss 3700 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 400 pf c rss 90 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 20 ns t d(off) r g = 1.5 (external) 45 ns t f 20 ns q g(on) 95 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 25 nc q gd 45 nc r thjc 0.42 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 20 a i sm repetitive; pulse width limited by t jm 80 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm i f = i s, -di/dt = 100 a/ s, v r = 100 v 0.85 c i rm 8a to-247 ad (ixfh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 to-268aa (d 3 pak) min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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