1 power transistors 2SD2158, 2SD2158a silicon npn triple diffusion planar type for power amplification with high forward current transfer ratio n features l high foward current transfer ratio h fe l satisfactory linearity of foward current transfer ratio h fe l full-pack package which can be installed to the heat sink with one screw n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current base current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c i b p c t j t stg ratings 80 100 60 80 6 4 2 0.5 20 2 150 C55 to +150 unit v v v a a a w ?c ?c 2SD2158 2SD2158a 2SD2158 2SD2158a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency collector output capacitance turn-on time storage time fall time symbol i cbo i ceo i ebo v ceo h fe * v ce(sat) v be(sat) f t c ob t on t stg t f conditions v cb = 80v, i e = 0 v cb = 100v, i e = 0 v ce = 40v, i b = 0 v eb = 6v, i c = 0 i c = 25ma, i b = 0 v ce = 4v, i c = 300ma i c = 1a, i b = 25ma i c = 1a, i b = 25ma v ce = 12v, i c = 200ma, f = 10mhz v cb = 10v, i e = 0, f = 1mhz i c = 1a, i b1 = 25ma, i b2 = C25ma, v cc = 50v min 60 80 500 typ 40 30 0.6 2.5 1 max 100 100 100 100 2500 1 1.2 unit m a m a m a v v v mhz pf m s m s m s 2SD2158 2SD2158a 2SD2158 2SD2158a * h fe rank classification rank q p o h fe 500 to 1000 800 to 1500 1200 to 2500 unit: mm 1:base 2:collector 3:emitter toC220 full pack package(a) 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip 4.0 0.5 +0.2 ?.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.25 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 f 3.1 0.1
2 power transistors 2SD2158, 2SD2158a p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c f t i c t on , t stg , t f i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 40 30 10 20 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) without heat sink (p c =2w) (1) (3) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 i b =3ma t c =25?c 2ma 1ma 0.8ma 0.6ma 0.4ma 0.2ma 0.1ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.01 3 1 0.1 0.03 0.3 0.01 0.03 0.1 0.3 1 3 10 i c /i b =40 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 3 1 0.1 0.03 0.3 0.01 0.03 0.1 0.3 1 3 10 i c /i b =40 25?c 100?c t c =?5?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 10 30 100 300 1000 3000 10000 30000 100000 v ce =4v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 v ce =12v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) 02.5 2.0 0.5 1.5 1.0 0.01 0.03 0.1 0.3 1 3 10 30 100 pulsed t w =1ms duty cycle=1% i c /i b =40 (i b1 =? b2 ) v cc =50v t c =25?c t stg t f t on collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25?c 10ms t=1ms dc 2SD2158 2SD2158a i cp i c collector to emitter voltage v ce ( v ) collector current i c ( a )
3 power transistors 2SD2158, 2SD2158a r th(t) t 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 0.1 1 10 100 10000 1000 note: r th was measured at ta=25?c and under natural convection. (1) p t =10v 0.2a (2w) and without heat sink (2) p t =10v 1.0a (10w) and with a 100 100 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w )
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