inchange semiconductor product specification silicon npn power transistors 2SD2129 description ? with to-220f package ? darlington ?high dc current gain ? low collector saturation voltage applications ? high power switching applications ? hammer drive,pulse motor drive applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i cm collector current-peak 5 a i b base current 0.5 a t a =25 ?? 2 p c collector dissipation t c =25 ?? 20 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD2129 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =30ma ;i b =0 100 v v cesat-1 collector-emitter saturation voltage i c =1.5a ;i b =3ma 1.5 v v cesat-2 collector-emitter saturation voltage i c =3a ;i b =12ma 2.0 v v besat base-emitter saturation voltage i c =1.5a ;i b =3ma 2.0 v i cbo collector cut-off current v cb =100v; i e =0 100 | a i ebo emitter cut-off current v eb =6v; i c =0 2.5 ma h fe-1 dc current gain i c =1.5a ; v ce =3v 2000 15000 h fe-2 dc current gain i c =3a ; v ce =3v 1000 switching times t on turn-on time 1.0 | s t s storage time 5.0 | s t f fall time i b1 =-i b2 =3ma v cc ?? 30v ,r l =20 |? 2.0 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SD2129 package outline fig.2 outline dimensions
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