sep.2000 h p g r tab #250, t = 0.8 tab #110, t = 0.5 r l r l b e j f f k m q r d a c n p n uvw b u pe u pb v pe v pb w pe w p b u ne u nb v ne v nb w ne w n s - dia. (2 typ.) p n (bup) gup (bvp) gvp (bwp) gwp (bun) gun (bvn) gvn (bwn) gwn eup eun u evp v evn ewp w ewn dimensions inches millimeters a 5.00 127.0 b 4.33 0.01 110.0 0.2 c 3.86 98.0 d 2.20 56.0 e 1.57 40.0 f 1.12 28.5 g 1.04 26.5 h 1.01 25.6 j 0.98 25.0 dimensions inches millimeters k 0.85 21.5 l 0.83 21.0 m 0.75 19.0 n 0.71 18.0 p 0.69 17.5 q 0.65 16.5 r 0.30 7.5 s 0.22 dia. dia. 5.5 description: mitsubishi igbt modules are de- signed for use in switching appli- cations. each module consists of six igbts in a three phase bridge configuration, with each transistor having a reverse-connected super- fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified sys- tem assembly and thermal man- agement. features: u low drive power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u isolated baseplate for easy heat sinking applications: u ac motor control u motion/servo control u ups u welding power supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM50TF-12H is a 600v (v ces ), 50 ampere six- igbt module. type current rating v ces amperes volts (x 50) cm 50 12 outline drawing and circuit diagram mitsubishi igbt modules CM50TF-12H medium power switching use insulated type
sep.2000 mitsubishi igbt modules CM50TF-12H medium power switching use insulated type absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 50 amperes peak collector current i cm 100* amperes emitter current** (t c = 25 c) i e 50 amperes peak emitter current i em 100* amperes maximum collector dissipation (t c = 25 c, tj 150 c) p c 250 watts mounting torque, m5 mounting C 1.47 ~ 1.96 n m weight C 390 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms *pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 5ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 50a, v ge = 15v C 2.1 2.8** volts i c = 50a, v ge = 15v, t j = 150 c C 2.15 C volts total gate charge q g v cc = 300v, i c = 50a, v ge = 15v C 150 C nc emitter-collector voltage v ec i e = 50a, v ge = 0v C C 2.8 volts ** pulse width and repetition rate should be such that device junction temperature rise is negligible. dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies C C 5 nf output capacitance c oes v ge = 0v, v ce = 10v C C 1.8 nf reverse transfer capacitance c res C C 1 nf resistive turn-on delay time t d(on) C C 200 ns load rise time t r v cc = 300v, i c = 50a, C C 300 ns switching turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 13 w C C 200 ns times fall time t f C C 300 ns diode reverse recovery time t rr i e = 50a, di e /dt = C100a/ m s C C 110 ns diode reverse recovery charge q rr i e = 50a, di e /dt = C100a/ m s C 0.14 C m c thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) per igbt C C 0.50 c/w thermal resistance, junction to case r th(j-c) per fwdi C C 1.00 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C C 0.042 c/w
sep.2000 mitsubishi igbt modules CM50TF-12H medium power switching use insulated type collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 0 v ge = 20v 15 12 11 8 7 t j = 25 o c 10 9 100 75 50 25 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 100 75 50 25 0 v ce = 10v t j = 25 c t j = 125 c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 5 0 25 50 75 100 4 3 2 1 0 v ge = 15v t j = 25 c t j = 125 c gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25 c i c = 20a i c = 100a i c = 50a 0 0.8 1.6 2.4 3.2 4.0 10 0 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 1 10 2 emitter current, i e , (amperes) t j = 25 c collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 1 10 0 10 -1 v ge = 0v 10 1 c ies c oes c res emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 0 10 1 10 2 10 2 10 1 t rr i rr di/dt = -100a/ m sec t j = 25 c 10 1 10 0 10 -1 reverse recovery current, i rr , (amperes) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 50 100 150 200 250 16 12 8 4 0 v cc = 200v v cc = 300v collector current, i c , (amperes) switching time, (ns) half-bridge switching characteristics (typical) 10 3 10 0 10 1 10 2 10 2 10 1 t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 13 w t j = 125 c t f i c = 50a
sep.2000 mitsubishi igbt modules CM50TF-12H medium power switching use insulated type time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.5 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 1.0 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3
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