0.5 C 12 ghz general purpose gallium arsenide fet technical data features ? high associated gain: 13.0 db typical at 4 ghz ? low bias: v ds = 2 v, i ds = 25 ma ? high output power: 20.0 dbm typical p 1 db at 4 ghz ? low noise figure: 1.2 db typical at 4 ghz ? cost effective ceramic microstrip package ? tape-and-reel packaging option available [1] ATF-10736 36 micro-x package description the ATF-10736 is a high perfor- mance gallium arsenide schottky- barrier-gate field effect transistor housed in a cost effective microstrip package. its noise figure makes this device appropri- ate for use in the gain stages of low noise amplifiers operating in the 0.5-12 ghz frequency range. this gaas fet device has a nominal 0.3 micron gate length using airbridge interconcnects between drain fingers. total gate periphery is 500 microns. proven gold based metallization systems and nitride passivation assure a rugged, reliable device. electrical specifications, t a = 25 c symbol parameters and test conditions units min. typ. max. nf o optimum noise figure: v ds = 2 v, i ds = 25 ma f = 2.0 ghz db 0.9 f = 4.0 ghz db 1.2 1.4 f = 6.0 ghz db 1.4 g a gain @ nf o ; v ds = 2 v, i ds = 25 ma f = 2.0 ghz db 16.5 f = 4.0 ghz db 12.0 13.0 f = 6.0 ghz db 10.5 p 1 db power output @ 1 db gain compression f = 4.0 ghz dbm 20.0 v ds = 4 v, i ds = 70 ma g 1 db 1 db compressed gain: v ds = 4 v, i ds = 70 ma f = 4.0 ghz db 12.0 g m transconductance: v ds = 2 v, v gs = 0 v mmho 70 140 i dss saturated drain current: v ds = 2 v, v gs = 0 v ma 70 130 180 v p pinchoff voltage: v ds = 2 v, i ds = 1 ma v -4.0 -1.3 -0.5 note: 1. refer to packaging section, tape-and-reel packaging for surface mount semiconductors.
2 ATF-10736 absolute maximum ratings absolute symbol parameter units maximum [1] v ds drain-source voltage v +5 v gs gate-source voltage v -4 v gd gate-drain voltage v -7 i ds drain current ma i dss p t total power dissipation [2,3] mw 430 t ch channel temperature c 175 t stg storage temperature [4] c -65 to +175 notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case temperature = 25 c. 3. derate at 2.9 mw/ c for t case > 25 c. 4. storage above +150 c may tarnish the leads of this package difficult to solder into a circuit. after a device has been soldered into a circuit, it may be safely stored up to 175 c. 5. the small spot size of this tech- nique results in a higher, though more accurate determination of q jc than do alternate methods. see measurements section for more information. part number ordering information part number devices per reel reel size ATF-10736-tr1 1000 7" ATF-10736-str 10 strip for more information, see tape and reel packaging for semiconductor devices. ATF-10736 typical performance, t a = 25 c thermal resistance: q jc = 350 c/w; t ch = 150 c liquid crystal measurement: 1 m m spot size [5] ATF-10736 noise parameters: v ds = 2 v, i ds = 25 ma freq. nf o g opt ghz db mag ang r n /50 1.0 0.8 0.88 41 0.52 2.0 0.9 0.75 85 0.27 4.0 1.2 0.48 159 0.08 6.0 1.4 0.46 -122 0.08 8.0 1.7 0.53 -71 0.43 frequency (ghz) nf o (db) figure 3. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ds = 4 v, i ds = 70 ma. frequency (ghz) gain (db) 2.0 1.5 1.0 0.5 0 18 15 12 9 6 g a (db) 2.0 6.0 4.0 8.0 10.0 12.0 g a nf o |s 21 | 2 msg msg mag 0.5 1.0 2.0 4.0 6.0 8.0 12.0 30 25 20 15 10 5 0 figure 1. optimum noise figure and associated gain vs. frequency. v ds = 2 v, i ds = 25 ma, t a = 25 c. figure 2. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ds = 2 v, i ds = 25 ma. frequency (ghz) gain (db) |s 21 | 2 msg mag 0.5 1.0 2.0 4.0 6.0 8.0 12.0 30 25 20 15 10 5 0
3 typical scattering parameters, common source, z o = 50 w , t a =25 c, v ds =2 v, i ds = 25 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.5 .96 -20 15.4 5.90 162 -32.4 .024 77 .50 -10 1.0 .92 -40 15.2 5.77 144 -26.7 .046 66 .48 -21 2.0 .77 -76 13.8 4.92 109 -21.3 .086 52 .39 -34 3.0 .59 -107 12.5 4.20 83 -20.0 .111 40 .33 -45 4.0 .49 -136 11.2 3.64 57 -17.3 .137 24 .26 -61 5.0 .43 -179 10.0 3.15 32 -15.5 .167 9 .14 -65 6.0 .49 138 8.6 2.74 8 -14.9 .179 -5 .05 22 7.0 .57 106 7.3 2.32 -13 -14.8 .183 -18 .19 60 8.0 .68 81 5.6 1.92 -32 -14.7 .185 -33 .33 57 9.0 .73 62 4.2 1.62 -50 -14.8 .183 -40 .42 46 10.0 .77 47 3.0 1.41 -66 -14.8 .182 -52 .46 38 11.0 .82 36 1.0 1.12 -81 -14.6 .186 -67 .50 27 12.0 .85 22 -0.2 0.98 -97 -14.5 .189 -75 .51 15 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ds =4 v, i ds = 70 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.5 .90 -32 19.0 8.95 147 -34.9 .018 77 .40 -7 1.0 .79 -53 18.0 7.96 128 -28.6 .037 70 .38 -17 2.0 .57 -96 15.5 5.99 90 -22.5 .075 56 .34 -38 3.0 .43 -129 13.3 4.60 64 -19.5 .106 43 .31 -50 4.0 .36 -163 11.6 3.78 39 -17.3 .136 31 .28 -51 5.0 .35 156 10.1 3.21 16 -15.6 .166 14 .22 -45 6.0 .47 110 8.8 2.76 -11 -14.5 .189 -5 .15 -4 7.0 .65 78 7.0 2.23 -36 -14.2 .196 -23 .28 35 8.0 .77 58 5.1 1.80 -56 -14.1 .198 -38 .42 37 9.0 .83 44 3.5 1.50 -72 -14.2 .195 -48 .51 33 10.0 .86 30 2.4 1.32 -88 -14.5 .188 -64 .55 26 11.0 .87 16 1.1 1.13 -106 -14.8 .182 -77 .60 18 12.0 .91 1 0.1 0.99 -123 -15.3 .171 -91 .65 7 a model for this device is available in the device models section.
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-8698e (11/99) 36 micro-x package dimensions 1 3 4 2 source source drain gate 2.15 (0.085) 2.11 (0.083) dia. 0.508 (0.020) 2.54 (0.100) 4.57 0.25 0.180 0.010 0.15 0.05 (0.006 0.002) notes: 1. dimensions are in millimeters (inches) 2. tolerances: in .xxx = 0.005 mm .xx = 0.13 0.56 (0.022) 1.45 0.25 (0.057 0.010) 107
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