silicon photo transistor the KDT3002A is high sensitivity npn silicon photo dimensions [unit : mm] transistor mounted in 3mm(t-1) all plastic mold type. this photo transistor is both compact and easy to mount. features higly sensitive photo transistor visable ray cut off mold type applications vcr, camcoders floppy disk drivers optical detectors/switch absolute maximum ratings [t a = 25 ] collector-emitter voltage emitter-collector voltage collector current collector power dissipation operating temperature storage temperature notes : 1. for max. 5 seconds at the position of 3 mm from the package. electro- optical characteristics 1 color tem p . =2856k standard tun g sten lam p ? response time(fall time) tf peek wavelength viewing angle tr - 2.5 - ? dark current light current spectral sensitivity response time(rise time) - 4.7 - v r =0v - v cc =10v, ic=1? rl=100? 880 - nm ? - - 30 - deg. p ma - 700~1050 nm i cel v ce =10v, e v =500lx 1 2.5 5.0 - max. unit i ceo v ce =10v, e e =0 - - 200 na tstg. -20~+85 -30~+85 typ. description v eco symbol condition min. soldering temperature* 1 tsol topr. KDT3002A v ceo v symbol unit 35 rating parameter v i c ma 20 p c 6 75 240 mw - 1 -
silicon photo transistor KDT3002A dynamic characteristics + 1 0 0 1 0 0 5 0 0 5 0 + 2 0 + 6 0 + 4 0 angle (deg.) 50 0 - 4 0 - 2 0 - 8 0 - 1 0 0 - 6 0 1 0 0 ta=25 + 8 0 power dissipation vs. ambient temperature collector current vs. irradiance dark current vs. ambient temperature collector current vs. collector-emitter voltage relative sensitivity vs. wavelength radiant pattern response time vs. load resistance irradiance e e (mw/cm 2 ) collector current i c (ma) dark current i ceo (na) a mbient temperature t a ( ) collector-emitter voltage v ce (v) wavelength (nm) relative sensitivity s (% ) relative intensity (%) load resistance r l (
) 100 0 25 50 75 100 0 20406080100 0 0.2 0.4 0.6 0.8 0246810 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 10 2 10 3 10 4 10 5 0 20 40 400 500 600 700 800 900 1000 1100 60 80 10 -1 10 0 10 1 10 2 0 120 80 100 20 40 60 ta=25 e e =0.5mw/cm 2 v ce =5v ta=25 v ce =10v ta=25 v ce =2v i c =2ma ta=25 tr tf 125 v out v cc r l i c i f t f t r 10% 90% output input swi tchi ng ti me me asuremen t circuit a mbient temperature t a ( ) e e =1.0mw/cm 2 e e =1.5mw/cm 2 e e =2.0mw/cm 2 e e =2.5mw/cm 2 e e =3.0mw/cm 2 1.0 - 2 -
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