1 technische information / technical information fs75r12ke3_b3 igbt-module igbt-modules
vorl?ufige daten preliminary data igbt-wechselrichter / igbt-inverter h?chstzul?ssige werte / maximum rated values !"#
$ #$ %&'()* +,-. + !/$
# / %,(0* %,()* 1,234 1, ) 5 5 6
!7
# ! 8(#
9%,(0* 1,:; ) 5 <
#+
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$ $#!$ +?-. @a + charakteristische werte / characteristic values # #b !"#c$$
$ #
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$
%&'()* ?j2> k "$$
!7c (lm79%&'()* 9+,-()+9+?-(+ jnd )9 o p!=!$
!7c
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# # +,-(+9+?-(+9%&'()* 1,-. )9 #5 <"#
# $#!$ +,-(+9+?-(+9%&'()* 1?-. r 5 "
7s$$
7tu
v #tv 1,()59+,-(g+ +?-(w)+9?32(r9k9%&'()* +?-(w)+9?32(r9k9%&'()* x32 9g 9y i
i
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v
#tv 1,()59+,-(g+ +?-(w)+9?32(r9k9%&'()* +?-(w)+9?32(r9k9%&'()* q 9 9) i
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7tu
v #tv 1,()59+,-(g+ +?-(w)+9?3zz(r9k9%&'()* +?-(w)+9?3zz(r9k9%&'()* x3zz 9r 9) i
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v #tv 1,()59+,-(g+ +?-(w)+9?3zz(r9k9%&'()* +?-(w)+9?3zz(r9k9%&'()* z 9 9y i
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"
$6
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2 technische information / technical information fs75r12ke3_b3 igbt-module igbt-modules
vorl?ufige daten preliminary data diode-wechselrichter / diode-inverter h?chstzul?ssige werte / maximum rated values 6
7
$ !
$ %&'()* +::; + /$
# / = 1c ) 5 6
7
# != 8(#
1c:; ) 5 <7
$ 1d +:(+98(#
9%&'()* 1d 5d
charakteristische werte / characteristic values # #b /
$ =$ 1c()59+?-(+9%&'()* 1c()59+?-(+9%&'()* +c 9g) 9g) 9) + + p!
#
7 !
1c()59ca(5ai
+:(g+9+?-()+9%&'()* +:(g+9+?-()+9%&'()* 1:; y9 5 5 7s$$
$ $ 1c()59ca(5ai
+:(g+9+?-()+9%&'()* +:(g+9+?-()+9%&'()* hq 9 r9 i i 5
$6
$ 1c()59ca(5ai
+:(g+9+?-()+9%&'()* +:(g+9+?-()+9%&'()* "qne 9 g9 #[ #[ 1c#=
#
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/ >fb, 9)0 a strommesswiderstand / shunt # #b f=
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!
%e(0* 6 a
#
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m/ #
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3 technische information / technical information fs75r12ke3_b3 igbt-module igbt-modules
vorl?ufige daten preliminary data modul / module 1
6p
$
$ l9()m79(# +n.op 9) !+ ll$ ##
lp1
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= ,,wx--w 90 #k ms
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$$ #$y a
=l) l 9 g9 f# <= =$ < $ mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but guarantees no characteristics. it is valid with the appropriate technical explanations.
4 technische information / technical information fs75r12ke3_b3 igbt-module igbt-modules
vorl?ufige daten preliminary data 5
$$
!1 %&'()* 5
$$
!1 %&'()* %&'()* %&'()* +,-z+{ 1,z5{ 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 150 135 120 105 90 75 60 45 30 15 0 +?-(y+ +?-(+ +?-()+ +?-(+ +?-(+ +?-(y+ s$$
!
!1 %&'()*
1 %&'()* %&'()* %&'()* 1,z5{ "z#[{ 0 25 50 75 100 125 150 20 18 16 14 12 10 8 6 4 2 0 "32 "3zz
5 technische information / technical information fs75r12ke3_b3 igbt-module igbt-modules
vorl?ufige daten preliminary data
1 +?-(w)+91,()59+,-(g+9%&'()* +?-(w)+91,()59+,-(g+9%&'()* +?-(w)+91,()59+,-(g+9%&'()* ?zk{ "z#[{ 0 5 10 15 20 25 30 35 40 45 20 18 16 14 12 10 8 6 4 2 0 "32 "3zz %
c#=
1fb,(tv |>fb,(tv |>fb,(tv |>fb,(tv z
{ |>fb,z a{ 0,001 0,01 0,1 1 10 0,01 0,1 1 |>fb, 1 +?-(w)+9?3zz(r9k9%&'()* +?-(w)+9?3zz(r9k9%&'()* +?-(w)+9?3zz(r9k9%&'()* +,-z+{ 1,z5{ 0 200 400 600 800 1000 1200 1400 175 150 125 100 75 50 25 0 1,9l 1,9 /\!/
t
v /\!/
t
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t
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t
v =
tv =
tv =
tv =
tv 1c(t+cv 1c(t+cv 1c(t+cv 1c(t+cv +cz+{ 1cz5{ 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 150 135 120 105 90 75 60 45 30 15 0 %&'()* %&'()*
6 technische information / technical information fs75r12ke3_b3 igbt-module igbt-modules
vorl?ufige daten preliminary data
/
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tv "qne(t1cv "qne(t1cv "qne(t1cv "qne(t1cv ?32(r9k9+,-(g+9%&'()* ?32(r9k9+,-(g+9%&'()* ?32(r9k9+,-(g+9%&'()* ?32(r9k9+,-(g+9%&'()* 1cz5{ "z#[{ 0 25 50 75 100 125 150 10 9 8 7 6 5 4 3 2 1 0 "qne
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tv "qne(t?v "qne(t?v "qne(t?v "qne(t?v 1c()59+,-(g+9%&'()* 1c()59+,-(g+9%&'()* 1c()59+,-(g+9%&'()* 1c()59+,-(g+9%&'()* ?zk{ "z#[{ 0 5 10 15 20 25 30 35 40 45 8 7 6 5 4 3 2 1 0 "qne %
c#=
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{ |>fb,z a{ 0,001 0,01 0,1 1 10 0,01 0,1 1 |>fb, / jz a{ jz
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7 technische information / technical information fs75r12ke3_b3 igbt-module igbt-modules
vorl?ufige daten preliminary data schaltplan / circuit diagram geh?useabmessungen / package outlines
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