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d a t a sh eet product speci?cation supersedes data of 1997 aug 13 1999 jun 11 discrete semiconductors but18f; but18af silicon diffused power transistors
1999 jun 11 2 philips semiconductors product speci?cation silicon diffused power transistors but18f; but18af description high-voltage, high-speed, glass-passivated npn power transistor in a sot186 package with electrically isolated mounting base. applications converters inverters switching regulators motor control systems. pinning pin description 1 base 2 collector 3 emitter mb mounting base; electrically isolated from all pins a ndbook, halfpage mbk109 1 23 fig.1 simplified outline (sot186) and symbol. 3 2 1 mbb008 quick reference data thermal characteristics notes 1. mounted without heatsink compound and 30 5 n force on centre of package. 2. mounted with heatsink compound and 30 5 n force on centre of package. symbol parameter conditions max. unit v cesm collector-emitter peak voltage v be =0 but18f 850 v but18af 1000 v v ceo collector-emitter voltage open base but18f 400 v but18af 450 v v cesat collector-emitter saturation voltage see fig.7 1.5 v i csat collector saturation current 4 a i c collector current (dc) see fig.4 6 a i cm collector current (peak value) see fig.4 12 a p tot total power dissipation t h 25 c; see fig.2 33 w t f fall time resistive load; see figs 10 and 11 0.8 m s symbol parameter conditions value unit r th j-h thermal resistance from junction to external heatsink note 1 6.15 k/w note 2 3.65 k/w
1999 jun 11 3 philips semiconductors product speci?cation silicon diffused power transistors but18f; but18af limiting values in accordance with the absolute maximum rating system (iec 134). notes 1. without heatsink compound. 2. with heatsink compound. isolation characteristics characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min. max. unit v cesm collector-emitter peak voltage v be =0 but18f - 850 v but18af - 1000 v v ceo collector-emitter voltage open base but18f - 400 v but18af - 450 v i csat collector saturation current - 4a i c collector current (dc) see fig.4 - 6a i cm collector current (peak value) see fig.4 - 12 a i b base current (dc) - 3a i bm base current (peak value) - 6a p tot total power dissipation t h 25 c; see fig.2; note 1 - 20 w t h 25 c; see fig.2; note 2 - 33 w t stg storage temperature - 65 +150 c t j junction temperature - 150 c symbol parameter typ. max. unit v isolm isolation voltage from all terminals to external heatsink (peak value) - 1500 v c isol isolation capacitance from collector to external heatsink 12 - pf symbol parameter conditions min. typ. max. unit v ceosust collector-emitter sustaining voltage i c = 100 ma; i boff =0; l = 25 mh; see figs 3 and 6 but18f 400 -- v but18af 450 -- v v cesat collector-emitter saturation voltage i c = 4 a; i b = 800 ma; see fig.7 -- 1.5 v v besat base-emitter saturation voltage i c = 4 a; i b = 800 ma; see fig.8 -- 1.3 v i ces collector-emitter cut-off current v ce =v cesmmax ; v be =0; note 1 -- 1ma v ce =v cesmmax ; v be =0; t j = 125 c; note 1 -- 2ma i ebo emitter-base cut-off current v eb =9v; i c =0 -- 10 ma
1999 jun 11 4 philips semiconductors product speci?cation silicon diffused power transistors but18f; but18af note 1. measured with a half-sinewave voltage (curve tracer). h fe dc current gain v ce =5v; i c = 10 ma; see fig.9 10 18 35 v ce =5v; i c = 1 a; see fig.9 10 20 35 switching times resistive load (see figs 10 and 11) t on turn-on time i con =4a; i bon = - i boff = 800 ma -- 1 m s t s storage time i con =4a; i bon = - i boff = 800 ma -- 4 m s t f fall time i con =4a; i bon = - i boff = 800 ma -- 0.8 m s switching times inductive load (see figs 10 and 13) t s storage time i con = 4 a; i bon = 800 ma - 1.6 2.5 m s t f fall time i con = 4 a; i bon = 800 ma - 150 400 ns symbol parameter conditions min. typ. max. unit fig.2 power derating curve. handbook, halfpage 050 t h ( o c) 100 150 120 0 40 80 mgk674 p tot max (%) fig.3 test circuit for collector-emitter sustaining voltage. h andbook, halfpage mge252 + 50 v 100 to 200 w 30 to 60 hz l 6 v oscilloscope vertical horizontal 1 w 300 w
1999 jun 11 5 philips semiconductors product speci?cation silicon diffused power transistors but18f; but18af fig.4 forward bias soar. mounted without heatsink compound and 30 5 n force on centre of package. t mb <25 c i - region of permissible dc operation. ii - permissible extension for repetitive pulse operation. handbook, full pagewidth mgb922 1 10 110 2 10 3 10 4 ii i v ce (v) 10 10 - 1 10 2 10 - 2 10 - 4 10 - 3 i c (a) dc i cm max i c max but18f but18af
1999 jun 11 6 philips semiconductors product speci?cation silicon diffused power transistors but18f; but18af fig.5 transient thermal impedance. handbook, full pagewidth mgb866 10 10 - 1 10 - 2 10 - 3 10 - 4 10 - 3 10 - 2 10 - 1 t p (s) 110 2 10 1 z th j - mb (k/w) 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 0 d = 1 fig.6 oscilloscope display for collector-emitter sustaining voltage. handbook, halfpage mge239 i c (ma) 250 200 100 0 min v ceosust v ce (v) fig.7 collector-emitter saturation voltage as a function of base current. t j =25 c. (1) i c =1a. (2) i c =2a. (3) i c =4a. handbook, halfpage 2 0 10 - 2 10 - 1 110 mgb884 1 v cesat (v) i b (a) (1) (2) (3)
1999 jun 11 7 philips semiconductors product speci?cation silicon diffused power transistors but18f; but18af fig.8 base-emitter saturation voltage as a function of base current. t j =25 c. (1) i c =4a. (2) i c =2a. (3) i c =1a. handbook, halfpage 1.5 0.5 10 - 2 10 - 1 110 mgb880 1 v besat (v) i b (a) (1) (3) (2) fig.9 dc current gain; typical values. v ce = 5 v; t j =25 c. handbook, halfpage mbc097 10 2 10 - 2 10 - 1 11010 2 10 1 i c (a) h fe v ce = 5 v 1v fig.10 test circuit resistive load. v cc = 250 v; t p =20 m s; v im = - 6 to +8 v; t p /t = 0.01. the values of r b and r l are selected in accordance with i con and i bon requirements. handbook, halfpage mge244 v cc d.u.t. r l r b v im t p t 0 fig.11 switching times waveforms with resistive load. t r 20 ns. handbook, halfpage mbb731 t 90% 10% 90% 10% i c i b i b on i b off i c on t r 30 ns t s t f t on t
1999 jun 11 8 philips semiconductors product speci?cation silicon diffused power transistors but18f; but18af fig.12 test circuit inductive load. v cl = 300 v; v cc = 30 v; v be = - 5 v; l b =1 m h; l c = 200 m h. handbook, halfpage mge246 + i b - v be l b l c v cc d.u.t. v cl fig.13 switching time waveforms with inductive load. handbook, halfpage mge238 t r 90% 10% i b i b on - i b off i c on 90% 10% i c t t t s t off t f
1999 jun 11 9 philips semiconductors product speci?cation silicon diffused power transistors but18f; but18af package outline references outline version european projection issue date iec jedec eiaj sot186 to-220 0 5 10 mm scale plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead to-220 exposed tabs sot186 a a 1 q c note 1. terminal dimensions within this zone are uncontrolled. terminals in this zone are not tinned. d d 1 l l 2 l 1 m q e 1 e b w m 1 23 e 1 e p b 1 unit d b 1 d 1 e q q p l c l 2 e 1 a 5.08 mm 4.4 4.0 a 1 2.9 2.5 b 0.9 0.7 1.5 1.3 0.55 0.38 17.0 16.4 7.9 7.5 e 10.2 9.6 5.7 5.3 e 1 2.54 14.3 13.5 10 0.4 l 1 (1) 4.8 4.0 1.4 1.2 4.4 4.0 w 3.2 3.0 m 0.9 0.5 dimensions (mm are the original dimensions) 97-06-11
1999 jun 11 10 philips semiconductors product speci?cation silicon diffused power transistors but18f; but18af definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1999 jun 11 11 philips semiconductors product speci?cation silicon diffused power transistors but18f; but18af notes
? philips electronics n.v. sca all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. internet: http://www.semiconductors.philips.com 1999 66 philips semiconductors C a worldwide company netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero 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3263 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2886, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: yukari dudullu, org. san. blg., 2.cad. nr. 28 81260 umraniye, istanbul, tel. +90 216 522 1500, fax. +90 216 522 1813 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 208 730 5000, fax. +44 208 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 800 943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 62 5344, fax.+381 11 63 5777 for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 02 67 52 2531, fax. +39 02 67 52 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5057 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 middle east: see italy printed in the netherlands 135002/02/pp12 date of release: 1999 jun 11 document order number: 9397 750 06093

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