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2000-02-22 page 1 bts 452 t smart power high-side-switch features overload protection current limitation short circuit protection thermal shutdown with restart overvoltage protection (including load dump) fast demagnetization of inductive loads reverse battery protection with external resistor cmos compatible input loss of gnd and loss of v bb protection esd - protection very low standby current product summary overvoltage protection v bb(az) 62 v operating voltage v bb(on) 6...52 v on-state resistance r on 200 m w nominal load current i l(iso) 1.8 a application all types of resistive, inductive and capacitive loads c compatible power switch for 12 v, 24 v and 42 v dc applications replaces electromechanical relays and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input, monolithically integrated in smart sipmos a technology. fully protected by embedded protection functions.
2000-02-22 page 2 bts 452 t block diagram + v bb in signal gnd esd miniprofet a out gnd logic voltage source charge pump level shifter temperature sensor rectifier limit for unclamped ind. loads gate protection current limit load gnd load v logic overvoltage protection pin symbol function 1 gnd logic ground 2 in input, activates the power switch in case of logic high signal 3 vbb positive power supply voltage 4 nc not connected 5 out output to the load tab vbb positive power supply voltage
2000-02-22 page 3 bts 452 t maximum ratings at t j = 25c, unless otherwise specified parameter symbol value unit supply voltage v bb 52 v supply voltage for full short circuit protection v bb(sc) 50 continuous input voltage v in -10 ... +16 load current (short - circuit current, see page 5) i l self limited a current through input pin (dc) i in 5 ma operating temperature t j -40 ...+150 c storage temperature t stg -55 ... +150 power dissipation 1) p tot 41.6 w inductive load switch-off energy dissipation 1)2) single pulse, (see page 8) tj =150 c, i l = 1 a e as 150 mj load dump protection 2) v loaddump 3) = v a + v s r i =2 w , t d =400ms, v in = low or high, v a =13,5v r l = 13.5 w r l = 27 w v /rdggxps 73.5 88.5 v e lectro s tatic d ischarge voltage (human body model) according to ansi eos/esd - s5.1 - 1993 esd stm5.1 - 1998 input pin all other pins v esd 1 5 kv thermal characteristics junction - case: r thjc - - 3 k/w thermal resistance @ min. footprint r th(ja) - 80 - k/w thermal resistance @ 6 cm 2 cooling area 1) r th(ja) - 45 60 1 device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air. (see page 16) 2 not tested, specified by design 3 v loaddump is setup without the dut connected to the generator per iso 7637-1 and din 40839 . supply voltages higher than v bb(az) require an external current limit for the gnd pin, e.g. with a 150 w resistor in gnd connection. a resistor for the protection of the input is integrated.
2000-02-22 page 4 bts 452 t electrical characteristics parameter and conditions symbol values unit dw 7 m ?& 9 ee 9 xqohvvrwkhuzlvhvshflilhg min. typ. max. load switching capabilities and characteristics on-state resistance t j = 25 c, i l = 1 a, v bb = 9...52 v t j = 150 c r on - - 150 270 200 380 m w nominal load current; device on pcb 1) t c = 85 c, v on = 0.5 v i l(iso) 1.8 2.2 - a turn-on time to 90% v out r l = 47 w t on - 80 180 s turn-off time to 10% v out r l = 47 w t off - 80 200 slew rate on 10 to 30% v out , r l = 47 w , v bb = 13.5 v dv/dt on - 0.7 2 v/s slew rate off 70 to 40% v out , r l = 47 w , v bb = 13.5 v -dv/dt off - 0.9 2 operating parameters operating voltage v bb(on) 6 - 52 v undervoltage shutdown of charge pump t j = -40...+85 c t j = 150 c v bb(under) - - - - 4 5.5 undervoltage restart of charge pump v bb(u cp) - 4 5.5 standby current t j = -40...+85 c, v in = low t j = +150 c 2) , v in = low i bb(off) - - - - 15 18 a leakage output current (included in i bb(off) ) v in = low i l(off) - - 5 operating current v in = high i gnd - 0.8 2 ma 1 device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air. (see page 16) 2 higher current due temperature sensor
2000-02-22 page 5 bts 452 t electrical characteristics parameter and conditions symbol values unit dw 7 m ?& 9 ee 9 xqohvvrwkhuzlvhvshflilhg min. typ. max. protection functions initial peak short circuit current limit (pin 3 to 5) t j = -40 c, v bb = 20 v, t m = 150 s t j = 25 c t j = 150 c t j = -40...+150 c, v bb > 40 v , ( see page 11 ) i l(scp) - - 4 - - 6.5 - 5 1) 9 - - - a repetitive short circuit current limit t j = t jt (see timing diagrams) v bb < 40 v v bb > 40 v i l(scr) - - 6 4.5 - - output clamp (inductive load switch off) at v out = v bb - v on(cl) , i bb = 4 ma v on(cl) 59 63 - v overvoltage protection 2) i bb = 4 ma v bb(az) 62 - - thermal overload trip temperature t jt 150 - - c thermal hysteresis d t jt - 10 - k reverse battery reverse battery 3) - v bb - - 52 v drain-source diode voltage ( v out > v bb ) t j = 150 c - v on - 600 - mv 1 not tested, specified by design 2 see also v on(cl) in circuit diagram on page 7 3 requires a 150 w resistor in gnd connection. the reverse load current through the intrinsic drain-source diode has to be limited by the connected load. power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. the temperature protection is not active during reverse current operation! input current has to be limited (see max. ratings page 3).
2000-02-22 page 6 bts 452 t parameter and conditions symbol values unit dw 7 m ?& 9 ee 9 xqohvvrwkhuzlvhvshflilhg min. typ. max. input input turn-on threshold voltage v in(t+) - - 2.2 v input turn-off threshold voltage v in(t-) 0.8 - - input threshold hysteresis d v in(t) - 0.4 - off state input current v in = 0.7 v i in(off) 1 - 25 a on state input current v in = 5 v i in(on) 3 - 25 input resistance (see page 7) r i 2 3.5 5 k w
2000-02-22 page 7 bts 452 t terms inductive and overvoltage output clamp profet v in out gnd bb v in i in v bb i bb i l v out i gnd v on r gnd + v bb out gnd v z v on v on clamped to 59v min. overvoltage protection of logic part input circuit (esd protection) + v bb in gnd gnd r signal gnd logic v z2 i r v z1 in gnd i r zd i i i esd- 7khxvhri(6']hqhuglrghvdvyrowdjhfodps dw'&frqglwlrqvlvqrwuhfrpphqghg v z1 =6.1v typ., v z2 =v bb(az) =62v min., r i =3.5 k w typ., r gnd =150 w reverse battery protection internal output pull down v out signal gnd r o v bb gnd logic in out l r power gnd gnd r signal gnd power inverse i r v bb - diode r gnd =150 w , r i =3.5k w typ., temperature protection is not active during inverse current r o = 200 k w typ.
2000-02-22 page 8 bts 452 t v bb disconnect with charged inductive load profet v in out gnd bb v bb high gnd disconnect profet v in out gnd bb v bb v in v gnd inductive load switch-off energy dissipation profet v in out gnd bb = e e e e as bb l r e load r l l ^ l z gnd disconnect with gnd pull up profet v in out gnd bb v bb v gnd v in energy stored in load inductance: e l = ? * l * i l 2 while demagnetizing load inductance, the enrgy dissipated in profet is e as = e bb + e l - e r = v on(cl) * i l (t) dt, with an approximate solution for r l > 0 w : e il r vv ir v as l l bb out cl ll out cl =+ + * * *( | )*ln( * || ) ()| () 2 1
2000-02-22 page 9 bts 452 t typ. transient thermal impedance z thja =f( t p ) @ 6cm 2 heatsink area parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t p -2 10 -1 10 0 10 1 10 2 10 k/w z thja d=0 d=0.01 d=0.02 d=0.05 d=0.1 d=0.2 d=0.5 typ. transient thermal impedance z thja =f( t p ) @ min. footprint parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t p -2 10 -1 10 0 10 1 10 2 10 k/w z thja d=0 d=0.01 d=0.02 d=0.05 d=0.1 d=0.2 d=0.5 typ. on-state resistance r on = f( v bb ) ; i l = 1 a ; v in = high 0 5 10 15 20 25 30 35 40 v 50 v bb 0 50 100 150 200 250 300 m w 400 r on -40c 25c 150c typ. on-state resistance r on = f( t j ) ; v bb = 13,5v ; v in = high -40 -20 0 20 40 60 80 100 120 c 160 t j 0 50 100 150 200 m w 300 r on
2000-02-22 page 10 bts 452 t typ. turn off time t off = f( t j ) ; r l = 47 w -40 -20 0 20 40 60 80 100 120 c 160 t j 0 20 40 60 80 100 120 s 160 t off 9...42v typ. turn on time t on = f( t j ) ; r l = 47 w -40 -20 0 20 40 60 80 100 120 c 160 t j 0 20 40 60 80 100 120 s 160 t on 9v 13.5v 42v typ. slew rate on dv/dt on = f( t j ) ; r l = 47 w -40 -20 0 20 40 60 80 100 120 c 160 t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v/s 2.0 d v d t on 9v 13.5v 42v typ. slew rate off dv/dt off = f( t j ) ; r l = 47 w -40 -20 0 20 40 60 80 100 120 c 160 t j 0.0 0.5 1.0 1.5 2.0 2.5 v/s 3.5 -d v d t off 9v 13.5v 42v
2000-02-22 page 11 bts 452 t typ. leakage current i l(off) = f( t j ) ; v bb = 42v ; v in = low -40 -20 0 20 40 60 80 100 120 c 160 t j 0.0 0.5 1.0 1.5 a 2.5 i l(off) typ. standby current i bb(off) = f( t j ) ; v bb = 42v ; v in = low -40 -20 0 20 40 60 80 100 120 c 160 t j 0 2 4 6 a 10 i bb(off) typ. initial peak short circuit current limit i l(scp) = f( v bb ) 0 10 20 30 40 v 60 v bb 0 2 4 6 a 10 i l(scp) -40c 25c 150c typ. initial short circuit shutdown time t off(sc) = f( t j,start ) ; v bb = 20v -40 -20 0 20 40 60 80 100 120 c 160 t j 0 1 2 3 4 ms 6 t off(sc)
2000-02-22 page 12 bts 452 t typ. input current i in = f( v in ) ; v bb = 13.5v 0 1 2 3 4 5 6 v 8 v in 0 10 20 30 a 50 i in -40...25c 150c typ. input current i in(on/off) = f( t j ) ; v bb = 13,5v; v in = low/high v in low 0,7v; v in high = 5v -40 -20 0 20 40 60 80 100 120 c 160 t j 0 2 4 6 8 a 12 i in on off typ. input threshold voltage v in(th) = f( t j ) ; v bb = 13,5v -40 -20 0 20 40 60 80 100 120 c 160 t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v 2.0 v in(th) on off typ. input threshold voltage v in(th) = f( v bb ) ; t j = 25c 0 10 20 30 v 50 v bb 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v 2.0 v in(th) on off
2000-02-22 page 13 bts 452 t maximum allowable load inductance for a single switch off l = f( i l ) ; t jstart =150c, r l =0 w 0.0 0.2 0.5 0.8 1.0 1.2 1.5 a 2.0 i l 0 500 1000 1500 2000 2500 3000 3500 mh 4500 l 13.5v 42v maximum allowable inductive switch-off energy, single pulse e as = f( i l ); t jstart = 150c, v bb = 13,5v 0.0 0.2 0.5 0.8 1.0 1.2 1.5 a 2.0 i l 0 200 400 600 800 mj 1200 e as
2000-02-22 page 14 bts 452 t timing diagrams figure 2b: switching a lamp, figure 1a: vbb turn on: in out l t i in v out v bb t figure 2a: switching a resistive load, turn-on/off time and slew rate definition figure 2c: switching an inductive load in t v out i l t t on off 90% dv/dton d v /d to ff 10% in l t v i out
2000-02-22 page 15 bts 452 t figure 3a: turn on into short circuit, shut down by overtemperature, restart by cooling t i in l l(scr) i i l(scp) t off(sc) t m t +hdwlqjxsriwkhfklspd\uhtxluhvhyhudoploolvhfrqgvghshqglqj rqh[whuqdofrqglwlrqv figure 4 : overtemperature: reset if t j < t jt figure 5: undervoltage restart of charge pump v o n v b b ( u n d e r ) v b b ( u c p ) v b b in out j t v t
2000-02-22 page 16 bts 452 t package and ordering code all dimensions in mm ordering code: q67060-s7406 gpt09161 5.4 0.1 -0.10 6.5 +0.15 a 0.5 9.9 6.22 -0.2 1 0.1 0.15 0.8 0.15 max 0.1 per side 5x0.6 1.14 4.56 +0.08 -0.04 0.9 2.3 -0.10 +0.05 b 0.51 min 0.1 1 +0.08 -0.04 0.5 0...0.15 b a 0.25 m 0.1 all metal surfaces tin plated, except area of cut. (4.17) printed circuit board (fr4, 1.5mm thick, one layer 70m, 6cm 2 active heatsink area ) as a reference for max. power dissipation p tot nominal load current i l(nom) and thermal resistance r thja published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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