? 2004 ixys all rights reserved v ces = 900 v i c25 = 75 a v ce(sat) = 2.7 v t fi typ = 200 ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c50 a v ge = 0 v t j = 150 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c110 , v ge = 15 v 2.2 2.7 v t j = 125 cv symbol test conditions maximum ratings v ces t j = 25 c to 150 c 900 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 900 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c50a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 100 a (rbsoa) clamped inductive load @ 600v p c t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque (to-247) 1.13/10nm/lb.in. weight to-247 ad 6 g to-268 4 g ds99377(04/05) g = gate, c = collector, e = emitter, tab = collector features z high frequency igbt z high current handling capability z mos gate turn-on - drive simplicity applications z pfc circuits z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z high power density z very fast switching speeds for high frequency applications hiperfast tm igbt ixgh 50n90b2 ixgt 50n90b2 to-268 (ixgt) c (tab) c (tab) g c e to-247 (ixgh) e g b2-class high speed igbts advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 50n90b2 ixgt 50n90b2 ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c110 a; v ce = 10 v, 25 40 s pulse test, t 300 s, duty cycle 2 % c ies 2500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 180 pf c res 75 pf q g 135 nc q ge i c = i c110 a, v ge = 15 v, v ce = 0.5 v ces 23 nc q gc 50 nc t d(on) 20 ns t ri 28 ns t d(off) 350 500 ns t fi 200 ns e off 4.7 7.5 mj t d(on) 20 ns t ri 28 ns e on 0.7 mj t d(off) 400 ns t fi 420 ns e off 8.7 mj r thjc 0.31 k/w r thck (to-247) 0.25 k/w inductive load, t j = 25 c i c = i c110 a, v ge = 15 v v ce = 720 v, r g = r off = 5 ? inductive load, t j = 125 c i c = i c110 a, v ge = 15 v v ce = 720 v, r g = r off = 5 ? to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-268 outline min. recommended footprint (dimensions in inches and mm)
? 2004 ixys all rights reserved ixgh 50n90b2 ixgt 50n90b2 fig. 2. extended output characteristics @ 25 o c 0 50 100 150 200 250 300 03691215 v c e - volts i c - amperes v ge = 15v 7v 9v 11v 13 v 5v fig. 3. output characteristics @ 125 o c 0 10 20 30 40 50 60 70 80 90 100 00.511.522.533.544.5 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v c e - volts i c - amperes v ge =15v 13v 11v 9v 5v 7v fig. 4. dependence of v ce( sat ) on temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalized i c = 50a i c = 25a v ge = 15v i c = 100a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 5 6 7 8 9 10 11 12 13 14 15 v g e - volts v c e - volts t j = 25 o c i c = 100a 50a 25a fig. 6. input adm ittance 0 25 50 75 100 125 150 175 200 225 250 3456789101112 v g e - volts i c - amperes t j = -40 o c 25 o c 125 o c
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 50n90b2 ixgt 50n90b2 ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 0 25 50 75 100 125 150 175 200 225 i c - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 8. dependence of turn-off energy loss on r g 0 5 10 15 20 25 30 35 40 0 30 6090120150 r g - ohms e o f f - millijoules i c = 25a t j = 125 o c v ge = 15v v ce = 720v i c = 50a i c = 100a fig. 9. dependence of turn-off energy loss on i c 0 2 4 6 8 10 12 14 16 18 20 20 30 40 50 60 70 80 90 100 i c - amperes e o f f - millijoules r g = 5 ? v ge = 15v v ce = 720v t j = 125 o c t j = 25 o c fig. 10. dependence of turn-off energy loss on temperature 0 2 4 6 8 10 12 14 16 18 20 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoules i c = 100a r g = 5 ? v ge = 15v v ce = 720v i c = 50a i c = 25a fig. 11. dependence of turn-off switching time on r g 200 300 400 500 600 700 800 900 1000 1100 1200 1300 5 101520253035404550 r g - ohms switching time - nanoseconds t d( off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 720v i c = 100a 50a 25a i c = 25a 50a 100a fig. 12. dependence of turn-off sw itching tim e on i c 150 200 250 300 350 400 450 500 550 600 20 30 40 50 60 70 80 90 100 i c - amperes switching time - nanoseconds t d( off) t fi - - - - - r g = 5 ? , v ge = 15v v ce = 720v t j = 125 o c t j = 25 o c
? 2004 ixys all rights reserved ixgh 50n90b2 ixgt 50n90b2 fig. 14. gate charge 0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15 0 20 40 60 80 100 120 140 q g - nanocoulombs v g e - volts v ce = 450v i c = 50a i g = 10ma fig. 15. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off switching time on temperature 150 200 250 300 350 400 450 500 550 600 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds t d(off) t fi - - - - - - r g = 5 ? v ge = 15 v v ce = 720v i c = 100a 50a 25a i c = 25a 50a 100a fig. 16. re ve r s e - bias saf e operating area 0 10 20 30 40 50 60 70 80 90 100 110 100 200 300 400 500 600 700 800 900 v c e - volts i c - amperes t j = 125 o c r g = 10 ? dv/dt < 10v/ns fig. 17. maxim um transient therm al resistance 0.01 0.1 1 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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