2sb566(k), 2sb566a(k) silicon pnp triple diffused application low frequency power amplifier power switching complementary pair with 2sd476(k) and 2sd476a(k) outline 1 2 3 1. base 2. collector (flange) 3. emitter to-220ab absolute maximum ratings (ta = 25 c) ratings item symbol 2sb566(k) 2sb566a(k) unit collector to base voltage v cbo C70 C70 v collector to emitter voltage v ceo C50 C60 v emitter to base voltage v ebo C5 C5 v collector current i c C4 C4 a collector peak current i c(peak) C8 C8 a collector power dissipation p c * 1 40 40 w junction temperature tj 150 150 c storage temperature tstg C55 to +150 C55 to +150 c note: 1. value at t c = 25 c.
2sb566(k), 2sb566a(k) 2 electrical characteristics (ta = 25 c) 2sb566(k) 2sb566a(k) item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo C70 C70 v i c = C10 m a, i e = 0 collector to emitter breakdown voltage v (br)ceo C50 C60 v i c = C50 ma, r be = emitter to base breakdown voltage v (br)ebo C5 C5 v i e = C10 m a, i c = 0 collector cutoff current i cbo C1 C1 m av cb = C50 v, i e = 0 dc current tarnsfer ratio h fe1 * 1 60 200 60 200 v ce = C4 v, i c = C1 a h fe2 35 35 v ce = C4 v, i c = C0.1 a collector to emitter saturation voltage v ce(sat) C1.0 C1.0 v i c = C2 a, i b = C0.2 a base to emitter saturation voltage v be(sat) C1.2 C1.2 v i c = C2 a, i b = C0.2 a gain bandwidth product f t 7 7 mhz v ce = C4 v, i c = C0.5 a turn on time t on 0.3 0.3 m sv cc = C10.5 v i c = 10i b1 = C10i b2 = C0.5 a turn off time t off 3.0 3.0 m s storage time t stg 2.5 2.5 m s note: 1. the 2sb566(k) and 2sb566a(k) are grouped by h fe1 as follows. bc 60 to 120 100 to 200
2sb566(k), 2sb566a(k) 3 60
40
20 0 50 100 150 c collector power dissipation p (w) case temperature t c ( c) maximum collector dissipation curve ?0 ? collector current i c (a) ? ? ?.0 ?.5 ?.2 ?.1 ? ?0 ? ?0 ?0 ?00 (?0 v, ?.15 a)
2sb566a k i c max (continuous) dc operation t c = 25 c (?0 v, ?.22 a)
2sb566 k area safe operation collector to emitter voltage v ce (v) 0 collector current i c (a) ?
?
?
?
? t c = 25 c ? ? ? ? ?0 i b = 0 ?0 ma ?0 ?0 ?0 ?0 ?0 ?0 typical output characteristics collector to emitter voltage v ce (v) 0 collector current i c (a) ? v ce = ? v ? ?.0 ?.2 ?.1 ?.05 ?.02 ?.01 ?.5 ?.4 ?.8 ?.2 ?.4 ?.0 ?.6 ?.2 t c = 75 c 25 ?5 typical transfer characteristics base to emitter voltage v be (v) 1,000 ?.01 dc current transfer ratio h fe t c = 75 c 500 200 100 50 20 10 5 v ce = ?v ?5 c ?.02 ?.05 ?.1 ?.2 ? ?.0 ?.5 ? 25 c dc current transfer ratio
vs. collector current collector current i c (a) ?.4 ?.01 collector to emitter
saturation voltage v ce(sat) (v) ?.2 ?.0 ?.8 ?.6 ?.4 ?.2 ?.02 ?.05 ?.1 ?.2 ?.5 ?.0 ? ? 0 25 c t c = 75 c ?5 c i c = 10 i b collector to emitter saturation voltage
vs. collector current collector current i c (a)
2sb566(k), 2sb566a(k) 4 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
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