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inch pound the documentation and process conversion measures necessary to comply with this revision shall be completed by 30 september 1999 mil-prf-19500/382c 28 july 1999 superseding mil-s-19500/382b 4 october 1993 performance specification semiconductor device, transistor, pnp, silicon, low-power type 2n2944a, 2n2945a, and 2n2946a jan, jantx, jantxv, and jans this specification is approved for use by all depart- ments and agencies of the department of defense. 1. scope 1.1 scope. this specification covers the performance requirements for low-power, high-speed chopper, pnp, silicon transistors . four levels of product assurance are provided for each device type as specified in mil-prf-19500. 1.2 physical dimension. see figure 1 (similar to t0-46). 1.3 maximum ratings. types p t 1/ t a = +25 c v ebo v cbo v ceo v eco i c t j and t stg 2n2944a 2n2945a 2n2946a mw 400 400 400 v dc -15 -25 -40 v dc -15 -25 -40 v dc -10 -20 -35 v dc -10 -20 -35 ma dc -100 -100 -100 c -65 to +200 -65 to +200 -65 to +200 1/ derate linearly 2.3 mw/ c above t a = +25 c. 1.4 primary electrical characteristis. limits h fe1 v ce = -0.5 v dc i c = -1 ma dc h fe (inv) 1 v ec = -0.5 v dc i b = -200 a dc r ec (on) 2 i b = -1 ma dc i e = 100 a ac(rms) i e = 0; f = 1 khz c ibo v eb = -6 v dc i c = 0 100 khz f 1 mhz 2n2944a 2n2945a 2n2946a 2n2944a 2n2945a 2n2946a 2n2944a 2n2945a 2n2946a min max 100 70 50 50 30 20 ohms 4 ohms 6 ohms 8 pf 6 v ec (ofs) h fe c obo limits i b = -200 a dc i e = 0 i r = -1.0 ma dc i e = 0 f = 1 mhz v ce = -6 v dc i c = -1 ma dc v cb = -6 v dc i e = 0 100 khz f 1 mhz 2n2944a 2n2945a 2n2946a 2n2944a 2n2945a 2n2946a 2n2944a 2n2945a 2n2946a min max mv dc -0.3 mv dc -0.5 mv dc -0.8 mv dc -0.6 mv dc -1.0 mv dc -2.0 15 55 10 55 5 55 pf 10 amsc n/a fsc 5961 distribution statement a. approved for public release; distribution is unlimited. beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this docume nt should be addressed to: commander, defense supply center columbus, attn: dscc-vac, 3990 east broad st., columbus, oh 43216-5000, by using the addressed standardization document improvement proposal (dd form 1426) appearing at the end of this document or by le tter.
mil-prf-19500/382c 2 2. applicable documents 2.1 general. the documents listed in this section are specified in sections 3 and 4 of this specification. this section does no t include documents cited in other sections of this specification or recommended for additional information or as examples. whil e every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specif ied requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents. 2.2.1 specifications, standards, and handbooks. the following specifications, standards, and handbooks form a part of this docu ment to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - performance specification semiconductor devices, general specification for. standard military mil-std-750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the defense automated printing sevice, 700 robbins avenue, building 4d (dpm-dodssp), philadelphia, pa 19111-5094.) 2.3 order of precedence. in the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. nothing in this docume nt, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 qualification. devices furnished under this specification shall be products that are authorized by the qualifying activit y for listing on the applicable qualified products list before contract award (see 4.2 and 6.4). 3.2 associated specification. the individual item requirements shall be in accordance with mil-prf-19500 and as specified her ein. 3.3 abbreviations, symbols, and definitions. abbreviations, symbols, and definitions used herein shall be as specified in mil-prf-19500, and as follows: v (br)eco - - - breakdown voltage, emitter to collector, with base open-circuited. h fe (inv) - - forward-current transfer ratio except that the collector and emitter shall be interchanged, i.e., i e /i b . i e - - - - - - emitter current (rms). r ec (on)- - - small-signal emitter-collector on-state resistance. v ec (ofs) - - emitter to collector offset voltage, i.e., open-circuit voltage between emitter collector when the base-collector jun ction is forward-biased. v ec - - - - - emitter to collector voltage (rms). 3.4 interface requirements and physical dimensions. the interface requirements and physical dimensions shall be as specified in mil-prf-19500, and herein. 3.4.1 lead finish. unless otherwise specified herein, lead finish shall be solderable in accordance with mil-prf-19500, mil-std-750, and herein. 3.5 marking. marking shall be in accordance with mil-prf-19500. 3.6 electrical performance characteristics. unless otherwise specified herein, the electrical performance characteristics are as specified in table i. 3.7 electrical test requirements. the electrical test requirements shall be the subgroups specified in table i herein.
mil-prf-19500/382c 3 symbol inches millimeter note min max min max cd .178 .195 4.52 4.95 ch .065 .085 1.65 2.16 hd .209 .230 5.31 5.84 lc .707 tp 1.80 tp 4 ld .021 .53 2, 6 ll .500 12.70 6 lu .016 .019 .41 .48 3, 6 l 1 .050 1.27 l 2 .250 6.35 tl .028 .048 .71 1.22 tw .036 .046 .91 1.17 p .100 2.54 q .040 1.02 r .007 .18 45 tp 45 tp notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. symbol tl is measured from hd maximum. 4. details of outline in this zone are optional. 5. symbol cd shall not vary more than 0.010 inch (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at gauge plane 0.054 inch (1.37 mm) +0.001 inch (0.03 mm) -0.000 inch (0.00 mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of tp relative to tab. device may be measured by direct methods or by gauge. 7. symbol lu applies between l 1 and l 2 . dimensions ld applies between l 2 and ll minimum. lead diameter shall not exceed 0.042 inch (1.07 mm) within l 1 and beyond ll minimum. 8. lead designation, shall be as follows: 1 - emitter; 2 - base; 3 - collector 9. collector is electrically connected to case. 10. beyond r maximum, tw shall be held for a minimum length of 0.011 inch (0.28 mm). 11. symbol r applied to both inside corners of tab. 12. in accordance with ansi y14.5m, diameters are equivalent to x symbology. figure 1. physical dimensions (similar to t0-46).
mil-prf-19500/382c 4 4. verification 4.1 classification of inspections. the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3) c. conformance inspection (see 4.4). 4.2 qualification inspection. qualification inspection shall be in accordance with mil-prf-19500. 4.3 screening (jans, jan, jantx, and jantxv levels only). screening shall be in accordance with mil-prf-19500 (table iv) and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see table iv measurement of mil-prf-19500) jans jan, jantx and jantxv 9 i cbo1 and h fe (inv) 1 n/a 11 i cbo1 ; h fe (inv) 1 ; i cbo1 = 100 percent of initial value or 0.2 na dc for 2n2944 and 2n2945, 0.5 na dc for 2n2946 h fe (inv) 1 = 25% of initial value. i cbo1 and h fe (inv) 1 12 see 4.3.1 see 4.3.1 13 subgroups 2 and 3 of table i herein; i cbo1 = 100 percent of initial value or 0.2 na dc for 2n2944 and 2n2945, 0.5 na dc for 2n2946; h fe (inv) 1 = 25% of initial value. subgroups 2 of table i herein; i cbo1 = 100 percent of initial value or 0.2 na dc for 2n2944a and 2n2945a, 0.5 na dc for 2n2946a; h fe (inv) 1 = 25% of initial value. 4.3.1 power burn-in conditions. power burn-in conditions are as follows: t a = room ambient as defined in the general requirements of mil-std-750, paragraph 4.5; p t = +400 mw 2n2944a: v cb = -8 v dc 2n2945a: v cb = -16 v dc 2n2946a: v cb = -28 v dc 4.4 conformance inspection. conformance inspection shall be in accordance with mil-prf-19500. 4.4.1 group a inspection. group a inspection shall be conducted in accordance with mil-prf-19500 and table i herein. 4.4.2 group b inspection. group b inspection shall be conducted in accordance with the conditions specified for subgroup test ing in via (jans) of 19500 and 4.4.2.1 herein. electrical measurements (end-points) requirements shall be in accordance with group a, subgroup 2 herein. delta requirements shall be in accordance with 4.5.6 herein. see 4.4.2.2 herein for jan, jantx, and jantxv group b testing. electrical measurements (end-points) requirements shall be in accordance with group a, subgroup 2 herein. de lta requirements shall be in accordance with 4.5.6 herein. 4.4.2.1 group b inspection, table via (jans) of mil-prf-19500. subgroup method condition b3 2037 condition a b4 1037 p t = 400 mw; t a = room ambient as defined in the general requirements of mil-std-750, section 4.5; t on = t off = 3 minutes minimum for 2,000 cycles. no heat sink or forced air cooling on the devices shall be permitted. v cb = -8 v dc (2n2944a); v cb = -16 v dc (2n2945a); v cb = -28 v dc (2n2946a). b5 1027 t a = 125 c 25 c; for 96 hours; p t = 400 mw at 100 c or adjusted as required by the chosen t a to give an average lot t j = 275 c. marking legibility requirements shall not apply; v cb = -8 v dc (2n2944a); v cb = -16 v dc (2n2945a); v cb = -28 v dc (2n2946a).
mil-prf-19500/382c 5 4.4.2.2 group b inspection, (jan, jantx, and jantxv). 1 / electrical endpoints shall be in accordance with group a, subgroup 2, herein. step method condition 1 1039 steady-state life: test condition b, 340 hours, v cb = -8 v dc (2n2944a), v cb = -16 v dc (2n2945a), v cb = -28 v dc (2n2946a), adjust to achieve t j = 150 c min. no heat sink on the device shall be permitted. n = 45 devices, c = 0. 2 1039 the steady state life test of step 1 shall be extended to 1000 hours for each die design. samples shall be selected from a wafer lot ever twelve months of wafer production, however, group b shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high-temperature life (non-operating), t a = +200 c. n = 22, c = 0. 1/ separate samples may be used for each step. in the event of a group b failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. if the new assembly lot option is exercised, the failed assembly lot shall be scrapped. 4.4.2.3 group b sample selection. samples selected from group b inspection shall meet all of the following requirements: a. for jan, jantx, and jantxv samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. for jans, samples shall be selected from each inspection lot. see mil-prf-19500. b. must be chosen from an inspection lot that has been submitted to and passed group a, subgroup 2, conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups b4 and b5 for jans, and group b for jan, jantx, and jantxv) may be pulled prior to the application of final lead finish. 4.4.3 group c inspection. group c inspection shall be conducted in accordance with the conditions specified for subgroup testing in table vii of mil-prf-19500, and 4.4.3.1 (jans), and 4.4.3.2 (jan, jantx, and jantxv) herein for group c testing. electrical measurements (end-points) and delta requirements shall be in accordance with group a, subgroup 2 and 4.5.6 herein. 4.4.3.1 group c inspection, table vii (jans) of mil-prf-19500. subgroup method conditions c2 2036 test condition e. c6 1037 intermittent operation life (sampling plan); v cb = -8 v dc (2n2944a), v cb = -16 v dc (2n2945a), v cb = -28 v dc (2n2946a) t j = +150 c. no heat sink or forced-air cooling on the devices. 4.4.3.2 group c inspection, table vii (jan, jantx, and jantxv) of mil-prf-19500. subgroup method conditions c2 2036 test condition e. c6 1037 not applicable 4.4.3.3 group c inspection sample selection. samples for subgroups in group c shall be chosen at random from any lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group a tests for conformance inspection. testing of a group using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.5 methods of inspection. methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 input capacitance. this test shall be conducted in accordance with mil-std-750, method 3240, except the output capacitor shall be omitted. 4.5.2 emitter to collector breakdown voltage. method of test shall be in accordance with method 3011 of mil-std-750, condition d, except that all references to the collector and the emitter of the transistor shall be interchanged. 4.5.3 forward-current transfer ratio (inverted connection). method of test shall be in accordance with method 3076 of mil-std - 750, except that all references to the collector and the emitter of the transistor shall be interchanged. then: h fe (inv) = i e / i b 4.5.4 emitter to collector offset voltage. the transistor shall be tested in the circuit of figure 2. the base current shall be adjusted to the specified value. the voltage between the emitter and collector shall then be measured using a voltmeter with a n input impedance high enough that halving it does not change the measured value within the required accuracy of the measurement.
mil-prf-19500/382c 6 4.5.5 small-signal emitter-collector on-state resistance. the transistor shall be tested in the circuit of figure 3. the bas e current shall be adjusted to the specified value and an ac sinusoidal signal current, i e , of the specified rms value shall be applied between the emitter and collector. the rms voltage, v ec , between the emitter and collector shall be measured using an ac voltmeter with an input impedance high enough that halving it does not change the measured value within the required accuracy of the measurement. the small-signal emitter-collector on-state resistance shall then be determined as follows: r ec (on) = v ec / i e where v ec is the rms voltage between the emitter and collector. 4.5.6 delta requirements. delta requirements shall be as specified below: step inspection mil-std-750 symbol limit unit method conditions min max 1 collector to base cutoff current 2n2944a 2n2945a 2n2946a 3036 bias condition d: i e = 0 v ce = -15 v dc v ce = -25 v dc v ce = -40 v dc i cbo1 100 percent of initial value 2 forward-current transfer ratio (inverted connection) 3076 v ec = -0.5 v dc; i b = 200 a dc; (see 4.5.3) h fe (inv) 1 25 percent of initial value 1/ the electrical measurements for table via (jans) of mil-prf-19500 are as follows: a. subgroup 5, see 4.5.6 herein, steps 1 and 2. 2/ the electrical measurements for table vib (jantx and jantxv) of mil-prf-19500 are as follows: a. subgroups 3 and 6, see 4.5.6 herein, step 2. 3/ the electrical measurements for table vii of mil-prf-19500 are as follows: a. subgroup 6, steps 1 and 2 (jans) and 2 (jan, jantx and jantxv).
mil-prf-19500/382c 7 table i. group a inspection. inspection 1/ mil-std-750 symbol limits unit method conditions min max subgroup 1 2 / visual and mechanical 3/ examination solderability 3/ 4 / resistance to 3/ 4 / 5 / solvent temp cycling 3/ 4 / heremetic seal 4/ fine leak gross leak electrical measurements 4/ bond strength 3/ 4 / 2071 2026 1022 1051 1071 2037 n = 45 devices, c = 0 n = 15 leads, c = 0 n = 15 devices, c = 0 test condition c, 25 cycles. n = 22 devices, c = o n = 22 devices, c = 0 group a, subgroup 2 herein precondition t a = +250 c at t = 24 hrs or t a = +300 c at t = 2 hrs, n = 11 wires, c = 0 subgroup 2 breakdown voltage collector to emitter 3011 bias condition d; i c = -10 a dc v (br)ceo 2n2944a 2n2945a 2n2946a -10 -20 -35 v dc v dc v dc collector to base cutoff current 3036 bias condition d; i c = -10 a dc i cbo1 2n2944a 2n2945a 2n2946a v cb = -15 v dc v cb = -25 v dc v cb = -40 v dc 10 10 10 a dc a dc a dc emitter to base cutoff current 3061 bias condition d; i ebo1 10 a dc breakdown voltage, emitter to collector 3011 bias condition b; i e = -10 a dc; i b = 0; (see 4.5.2) v (br)eco 2n2944a 2n2945a 2n2946a -10 -20 -35 v dc v dc v dc collector to base cutoff current 3036 bias condition d; i cbo2 2n2944a 2n2945a 2n2946a v cb = -15 v dc v cb = -25 v dc v cb = -40 v dc -0.1 -0.2 -0.5 na dc na dc na dc emitter to base cutoff current 3061 bias condition d; i ebo2 2n2944a 2n2945a 2n2946a v eb = -15 v dc v eb = -25 v dc v eb = -40 v dc -0.1 -0.2 -0.5 na dc na dc na dc see footnote at the end of table.
mil-prf-19500/382c 8 table i. group a inspection. -continued inspection 1/ mil-std-750 symbol limits unit method conditions min max subgroup 2 - continued. forward-current transfer ratio 3076 v ce = -0.5 v dc; i c = -1.0 ma dc h fe1 2n2944a 2n2945a 2n2946a 100 70 50 forward-current transfer ratio (inverted connection) 3076 v ec = -0.5 v dc; i b = -200 a dc; (see 4.5.3) h fe (inv) 1 2n2944a 2n2945a 2n2946a 50 30 20 emitter to collector offset voltage - - - i b = -200 a dc; i e = 0; (see 4.5.4 and figure 2). v ec (ofs) 1 2n2944a 2n2945a 2n2946a -0.3 -0.5 -0.8 mv dc mv dc mv dc emitter to collector offset voltage - - - i b = -1 ma dc; i e = 0; (see 4.5.4 and figure 2). v ec (ofs) 2 2n2944a 2n2945a 2n2946a -0.6 -1.0 -2.0 mv dc mv dc mv dc emitter to collector offset voltage - - - i b = -2 ma dc; i e = 0; (see 4.5.4 and figure 2). v ec (ofs) 3 2n2944a 2n2945a 2n2946a -1.0 -1.6 -2.5 mv dc mv dc mv dc subgroup 3 high-temperature operation: t a = +100 c collector to base cutoff current 3036 bias condition d; i c = 0 i cbo3 2n2944a 2n2945a 2n2946a v cb = -15 v dc v cb = -25 v dc v cb = -40 v dc -10 -20 -25 na dc na dc na dc emitter to base cutoff current 3061 bias condition d; i c = 0 i ebo3 2n2944a 2n2945a 2n2946a v cb = -15 v dc v cb = -25 v dc v cb = -40 v dc -10 -15 -20 na dc na dc na dc low-temperature operation: t a = -55 c forward-current transfer ratio 2n2944a 2n2945a 2n2946a 3076 v ce = -0.5 v dc; i c = -1 ma dc h fe2 35 25 20 see footnote at the end of table.
mil-prf-19500/382c 9 table i. group a inspection - continued. inspection 1/ mil-std-750 symbol limits unit method conditions min max subgroup 3 -continued forward-current transfer ratio (inverted connection) 2n2944a 2n2945a 2n2946a 3076 v ec = -0.5 v dc; i b = -200 a dc (see 4.5.3) h fe (inv) 2 25 15 10 subgroup 4 small-signal emitter- collector on-state resistance 2n2944a 2n2945a 2n2946a i b = -100 a dc; i e = 0; i e = 100 a ac (rms) f = 1 khz (see 4.5.5 and figure 3) r ec (on) 1 10 12 14 small-signal emitter- collector on-state resistance - - - i b = -1 a dc; i e = 0; i e = 100 a ac (rms) f = 1 khz (see 4.5.4 and figure 2). r ec (on) 2 2n2944a 2n2945a 2n2946a 4 6 8 magnitude of common- emitter small-signal short-circuit forward-current transfer ratio - - - v ce = -6 v dc; i c = -1 ma dc; f = 1 mhz h fe 2n2944a 2n2945a 2n2946a 15 10 5 55 55 55 open circuit output capacitance 3236 v cb = -6 v dc; i e = 0; 100 khz f 1 mhz c obo 10 pf input capacitance (output open-circuited) 3240 v eb = -6 v dc; i c = 0; 100 khz f 1 mhz (see 4.5.1) c ibo 6.0 pf pulse response: delay time rise time storage time fall time 3251 3251 3251 3251 test condition b (see figure 4) test condition b (see figure 4) test condition b (see figure 4) test condition b (see figure 4) t d t r t s t f 50 100 350 100 ns ns ns ns subgroups 5, 6, and 7 not applicable 1/ for sampling plan, see mil-prf-19500. 2/ for resubmission of failed subgroup a1, double the sample size of the failed test or sequence of tests. 3/ separate samples may be used. 4/ not required for jans. 5/ not required for laser marked devices.
mil-prf-19500/382c 10 figure 2. emitter to collector offset voltage test circuit. figure 3. emitter to collector offset voltage test circuit.
mil-prf-19500/382c 11 notes: 1. the rise time (t r ) and fall time (t f ) of the applied pulse shall be 10 ns, duty cycle 2%. the input pulse width shall be 500 ns. 3. output monitored with an oscilloscope with the following characteristics: z in 1 m , t r 1 ns. figure 4. pulse response test circuit.
mil-prf-19500/382c 12 5. packaging 5.1 packaging. for acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). when actual packaging of material is to be performed by dod personnel, these personnel need to contact the responsible packagin g activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging activity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense agency's automated packaging files, cd - rom products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 notes. the notes specified in mil-prf-19500 are applicable to this specification. 6.2 acquisition requirements. acquisition documents should specify the following: a. issue of dodiss to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see 2.2.1). b. lead finish (see 3.3.1). c. type designation and product assurance level. d. packaging requirements (see 5.1). 6.3 changes from previous issue. marginal notations are not used in this revision to identify changes with respect to the pre vious issue due to the extent of the changes. 6.4 qualification. with respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in qualified manufacturers list qml-19500 whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arran ge to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligi ble to be awarded contracts or purchase orders for the products covered by this specification. information pertaining to qualification o f products may be obtained from defense supply center columbus, dscc-vqe, columbus, oh 43216. concluding material custodians: preparing activity: army - cr dla -cc navy - ec air force - 11 (project 5961-1845) nasa - na dla - cc review activities: army - av air force - 19, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. i recommend a change: 1. document number mil-s-19500/382c 2. document date (yymmdd) 3. document title semiconductor device, transistor, pnp, silicon, low-power type 2n2944a, 2n2945a, and 2n2946a jan, jantx, jantxv, and jans 4. nature of change (identify paragraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) (1) commercial (2) dsn (if applicable) (3) e-mail 7. date submitted (yymmdd) 8. preparing activity a. name alan barone b. telephone (include area code) (1) commercial (2) dsn (3) e-mail (614) 692-0510 850-0510 alan_barone@dscc.dla.mil c. address (include zip code) defense supply center columbus, dscc-vac, columbus, oh 43216 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman road, suite 2533 fort belvoir, vaginia 22060-6888 telephone (703) 767-6888 dsn 427-6888 dd form 1426, feb 1999 previous editions are obsolete 198/290

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