View IPA65R660CFD_2984372.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

industrial & multimarket data sheet rev. 2.0, 2011-02-01 final coolmos cfd 650v coolmos? cfd power transistor ipx65r660cfd mosfet metal oxide semiconductor field effect transistor www..net
drain pin 2 gate pin 1 source pin 3 650v coolmos? cfd power transistor ipd65r660cfd ipb65r660cfd, ipp65r660cfd IPA65R660CFD final data sheet 2 rev. 2.0, 2011-02-01 1 description coolmos? is a revolutionary technology for high voltage power mosfets, designed according to the superjunction (sj) principle and pioneered by infineon technologies. 650v coolmos? cfd series combines the experience of the leading sj mosfet supplier with high class innovation. the resulting devi ces provide all benefits of a fast switching sj mosfet while offering an extremely fast and robust body diode. this combination of extrem ely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more e fficient, lighter, and cooler features ? ultra-fast body diode ? very high commutation ruggedness ? extremely low losses due to very low fom rdson*qg and eoss ? easy to use/drive ? qualified for industrial grade applications according to jedec 1) ? pb-free plating, halogen free mold compound applications 650v coolmos? cfd is especially su itable for resonant switching pwm stages for e.g. pc silverbox, lc d tv, lighting, server,telecom. please note: for mosfet paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 1) j-std20 and jesd22 table 1 key performance parameters parameter value unit v ds @ t j,max 700 v r ds(on),max 0.66 ? q g,typ 20 nc i d,pulse 17 a e oss @ 400v 1.8 j body diode d i /d t 500 a/s type / ordering code package marking related links ipd65r660cfd pg-to252 ifx coolmos webpage ipb65r660cfd pg-to263 ifx design tools ipp65r660cfd pg-to220 65f660 IPA65R660CFD pg-to220 fullpak ipi65r660cfd pg-to262 ipw65r660cfd pg-to247
650v coolmos? cfd power transistor ipx65r660cfd table of contents final data sheet 3 rev. 2.0, 2011-02-01 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 table of contents
650v coolmos? cfd power transistor ipx65r660cfd maximum ratings final data sheet 4 rev. 2.0, 2011-02-01 2 maximum ratings at t j = 25 c, unless otherwise specified. table 2maximum ratings parameter symbol values unit note / test condition min. typ. max. continuous drain current 1) 1) limited by t j,max. i d - - 6.0 a t c = 25 c 3.8 t c = 100c pulsed drain current 2) 2) pulse width t p limited by t j,max i d,pulse - - 17 a t c =25 c avalanche energy, single pulse e as - - 115 mj i d =1.2 a, v dd =50 v avalanche energy, repetitive e ar - - 0.21 i d =1.2 a, v dd =50 v avalanche current, repetitive i ar - - 1.2 a mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...480 v gate source voltage v gs -20 - 20 v static -30 30 ac (f>1 hz) power dissipation for non fullpak p tot - - 63 w t c =25 c power dissipation for fullpak p tot - - 28 w t c =25 c operating and storage temperature t j , t stg -55 - 150 c mounting torque non fullpak - - 60 ncm m3 and m3.5 screws mounting torque fullpak 50 m2.5 screws continuous diode forward current i s - - 6.0 a t c =25 c diode pulse current 2) i s,pulse - - 17 a t c =25 c reverse diode dv/dt 3) 3) identical low side and high side switch with identical r g dv/dt - - 15 v/ns v ds =0...480 v, i sd ? i d , ? t j =125 c maximum diode commutation speed 3) di f /dt 500 a/s
650v coolmos? cfd power transistor ipx65r660cfd thermal characteristics final data sheet 5 rev. 2.0, 2011-02-01 3 thermal characteristics table 3 thermal characteristics to-220; to-247 & to-262 parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc -- 2.0c/w thermal resistance, junction - ambient r thja - - 62 leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from case for 10 s table 4 thermal characteristics to-220fullpak parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc -- 4.5c/w thermal resistance, junction - ambient r thja - - 80 leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from case for 10 s table 5 thermal characteristics to-263 and to-252 parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc -- 2.0c/w thermal resistance, junction - ambient r thja - - 62 smd version, device on pcb, minimal footprint 35 smd version, device on pcb, 6cm 2 cooling area 1) 1) device on 40mm*40mm*1.5 epoxy pcb fr4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without air stream cooling. so ld er ing tem p er a tu re , wave- & reflowsoldering allowed t sold - - 260 c reflow msl1
650v coolmos? cfd power transistor ipx65r660cfd electrical characteristics final data sheet 6 rev. 2.0, 2011-02-01 4 electrical characteristics electrical characteristics, at t j=25 c, unless otherwise specified table 6 static characteristics parameter symbol values unit note / test condition min. typ. max. drain-source breakdown voltage v (br)dss 650 - - v v gs =0 v, i d =1.0 ma gate threshold voltage v gs(th) 3.5 4 4.5 v ds = v gs , i d =0.21 ma zero gate voltage drain current i dss -- 5a v ds =600 v, v gs =0 v, t j =25 c -600- v ds =600 v, v gs =0 v, t j =150 c gate-source leakage current i gss - - 100 na v gs =20 v, v ds =0 v drain-source on-state resistance r ds(on) -0.590.66 ? v gs =10 v, i d =2.1 a, t j =25 c -1.54- v gs =10 v, i d =2.1 a, t j =150 c gate resistance r g -6.5- ? f =1 mhz, open drain table 7 dynamic characteristics parameter symbol values unit note / test condition min. typ. max. input capacitance c iss -615- pf v gs =0 v, v ds =100 v, f =1 mhz output capacitance c oss -33- effective output capacitance, energy related 1) 1) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss c o(er) -21- v gs =0 v, v ds =0...480 v effective output capacitance, time related 2) 2) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss c o(tr) -88- i d =constant, v gs =0 v v ds =0...480v turn-on delay time t d(on) -9- ns v dd =400 v, v gs =13 v, i d =3.2a, r g =6.8 ? rise time t r -8- turn-off delay time t d(off) -40- fall time t f -10-
650v coolmos? cfd power transistor ipx65r660cfd electrical characteristics final data sheet 7 rev. 2.0, 2011-02-01 table 8 gate charge characteristics parameter symbol values unit note / test condition min. typ. max. igate to source charge q gs -3.5- nc v dd =480 v, i d =3.2 a, v gs =0 to 10 v gate to drain charge q gd -12- gate charge total q g -22- gate plateau voltage v plateau -6.4- v table 9 reverse diode characteristics parameter symbol values unit note / test condition min. typ. max. diode forward voltage v sd -0.9- v v gs =0 v, i f =3.2 a, t j =25 c reverse recovery time t rr -65- ns v r =400 v, i f =3.2 a, d i f /d t =100 a/s reverse reco very charge q rr -0.20- c peak reverse recovery current i rrm -4.5- a
650v coolmos? cfd power transistor ipx65r660cfd electrical characteristics diagrams final data sheet 8 rev. 2.0, 2011-02-01 5 electrical characteristics diagrams table 10 power dissipation non fullpak power dissipation fullpak p tot = f( t c ) p tot = f( t c ) table 11 max. transient thermal impedance non fullpak max. transient thermal impedance fullpak z (thjc) =f(tp); parameter: d=t p /t z (thjc) =f(tp); parameter: d=t p /t
650v coolmos? cfd power transistor ipx65r660cfd electrical characteristics diagrams final data sheet 9 rev. 2.0, 2011-02-01 table 12 safe operating area t c =25 c non fullpak safe operating area t c =25 c fullpak i d =f(v ds ); t c =25 c; v gs > 7.5v; d=0; parameter t p i d =f(v ds ); t c =25 c; v gs > 7.5v; d=0; parameter t p table 13 safe operating area t c =80 c non fullpak safe operating area t c =80 c fullpak i d =f(v ds ); t c =80 c; v gs > 7.5v; d=0; parameter t p i d =f(v ds ); t c =80 c; v gs > 7.5v; d=0; parameter t p
650v coolmos? cfd power transistor ipx65r660cfd electrical characteristics diagrams final data sheet 10 rev. 2.0, 2011-02-01 table 14 typ. output characteristics t j =25 c typ. output characteristics t j =125 c i d =f( v ds ); t j =25 c; parameter: v gs i d =f( v ds ); t j =125 c; parameter: v gs table 15 typ. drain-source on-state resistance drain-source on-state resistance r ds(on) =f( i d ); t j =125 c; parameter: v gs r ds(on) =f( t j ); i d =2.1 a; v gs =10 v
650v coolmos? cfd power transistor ipx65r660cfd electrical characteristics diagrams final data sheet 11 rev. 2.0, 2011-02-01 table 16 typ. transfer characteristics typ. gate charge i d =f( v gs ); v ds =20v v gs =f( q gate ), i d =3.2 a pulsed table 17 avalanche energy drain-source breakdown voltage e as =f( t j ); i d =1.2 a; v dd =50 v v br(dss) =f( t j ); i d =1.0 ma
650v coolmos? cfd power transistor ipx65r660cfd electrical characteristics diagrams final data sheet 12 rev. 2.0, 2011-02-01 table 18 typ. capacitances typ. c oss stored energy c=f( v ds ); v gs =0 v; f =1 mhz e oss =f( v ds ) table 19 forward characteristics of reverse diode i f =f( v sd ); parameter: t j
650v coolmos? cfd power transistor ipx65r660cfd test circuits final data sheet 13 rev. 2.0, 2011-02-01 6 test circuits table 20 switching times test circui t and waveform for inductive load switching times test circuit for i nductive load switching time waveform table 21 unclamped inductive load test circuit and waveform unclamped inductive load test circuit unclamped inductive waveform table 22 test circuit and waveform for diode characteristics test circuit for diode characteristics diode recovery waveform v ds v gs v ds v gs t d(on) t d( o f f) t r t on t f t off 10% 90% v ds i d v ds v d v (br)ds i d v ds v ds i d r g1 r g2 r g1 = r g2 f d it /d t rr 10% 90% rrm rrm t rrm v sil00088 q f v i f q s rrm v s tt f /d i d rr t rr tt s t f =+ = rr qq sf + q
650v coolmos? cfd power transistor ipx65r660cfd package outlines final data sheet 14 rev. 2.0, 2011-02-01 7 package outlines figure 1 outlines to-252, dimensions in mm/inches
650v coolmos? cfd power transistor ipx65r660cfd package outlines final data sheet 15 rev. 2.0, 2011-02-01 figure 2 outlines to-220, dimensions in mm/inches
650v coolmos? cfd power transistor ipx65r660cfd package outlines final data sheet 16 rev. 2.0, 2011-02-01 figure 3 outlines to-220 fullpak, dimensions in mm/inches
650v coolmos? cfd power transistor ipx65r660cfd package outlines final data sheet 17 rev. 2.0, 2011-02-01 figure 4 outlines to-263, dimensions in mm/inches
650v coolmos? cfd power transistor ipx65r660cfd package outlines final data sheet 18 rev. 2.0, 2011-02-01 figure 5 outlines to-262, dimensions in mm/inches
650v coolmos? cfd power transistor ipx65r660cfd package outlines final data sheet 19 rev. 2.0, 2011-02-01 figure 6 outlines to-247, dimensions in mm/inches millimeters 5.44 (bsc) c q e3 e2 d e d1 d2 l1 e l n s ?p e1 b1 a a1 b a2 b2 dim 0.55 6.04 5.49 1.00 3.68 4.10 20.80 16.25 15.70 0.95 3.50 19.80 13.10 3 min 1.90 4.83 2.27 1.07 1.85 1.90 0.238 0.216 0.039 0.145 0.161 0.075 0.819 0.640 0.618 0.022 0.190 0.089 0.042 0.073 0.037 0.075 0.138 0.780 0.516 0.68 6.30 6.00 17.65 2.60 5.10 14.15 3.70 21.10 16.13 20.32 1.35 4.47 2.41 5.21 2.54 1.33 2.16 max 2.16 0.027 0.214 (bsc) 3 0.248 0.236 0.695 0.557 0.102 0.201 0.831 0.635 0.053 0.146 0.800 0.176 inches min max 0.095 0.205 0.100 0.052 0.085 0.085 to247-3-21/-41/-44 european projection issue date 0 scale 7.5mm 5 5 0 revision 09-07-2010 05 document no. z8b00003327 b3 b4 2.87 2.87 0.113 0.113 3.38 3.13 0.133 0.123
650v coolmos? cfd power transistor ipx65r660cfd revision history final data sheet 20 rev. 2.0, 2011-02-01 8 revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com edition 2011-02-01 published by infineon technologies ag 81726 munich, germany ? 2011 infineon technologies ag all rights reserved. legal disclaimer the information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. with respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including wit hout limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for in formation on the types in question, please contact the neares t infineon technologies office. the infineon technologies component described in this data sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applicat ions or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or s ystem or to affect the safe ty or effectiveness of that device or system. life support devices or systems are inte nded to be implanted in the human body or to support and/or maintain and sustain and/or protec t human life. if they fail, it is reason able to assume that the health of the user or other persons may be endangered. revision history: 2011-02-01, rev. 2.0 previous revision: revision subjects (major ch anges since last revision) 2.0 release of final data sheet

▲Up To Search▲

Price & Availability of IPA65R660CFD

	To Download IPA65R660CFD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .