? semiconductor components industries, llc, 2001 may, 2001 rev. 1 1 publication order number: 1smb5913bt3/d 1smb5913bt3 series 3 watt plastic surface mount zener voltage regulators this complete new line of 3 watt zener diodes offers the following advantages. specification features: ? zener voltage range 3.3 v to 200 v ? esd rating of class 3 (>16 kv) per human body model ? flat handling surface for accurate placement ? package design for top side or bottom circuit board mounting mechanical characteristics: case: void-free, transfer-molded plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 260 c for 10 seconds leads: modified lbend providing more contact area to bond pads polarity: cathode indicated by polarity band flammability rating: ul94 v0 maximum ratings rating symbol value unit maximum steady state power dissipation @ t l = 75 c measured at zero lead length derate above 75 c thermal resistance from junction to lead p d r jl 3.0 40 25 w mw/ c c/w maximum steady state power dissipation @ t a = 25 c (note 1.) derate above 25 c thermal resistance from junction to ambient p d r ja 550 4.4 226 mw mw/ c c/w operating and storage temperature range t j , t stg 65 to +150 c 1. fr4 board, within 1 to device, using on semiconductor minimum recommended footprint, as shown in case 403a outline dimensions spec. plastic surface mount zener voltage regulator diodes 3.3200 volts 3 watt dc power devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. device package shipping ordering information 1smb59xxbt3 smb 2500/tape & reel smb case 403a plastic http://onsemi.com cathode anode y = year ww = work week 9xxb = specific device code = (see table page 3) yww 9xxb marking diagram 2the at3o suffix refers to a 13 inch reel.
zener voltage regulator i f v i i r i zt v r v z v f 1smb5913bt3 series http://onsemi.com 2 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max. @ i f = 200 ma(dc) for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f i zm maximum dc zener current
1smb5913bt3 series http://onsemi.com 3 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max. @ i f = 200 ma(dc) for all types) zener voltage (note 3.) zener impedance (note 4.) leakage current device device v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r i zm d ev i ce (note 2.) d ev i ce marking min nom max ma ma m a volts ma(dc) 1smb5913bt3 913b 3.13 3.3 3.47 113.6 10 500 1 100 1 454 1smb5914bt3 914b 3.42 3.6 3.78 104.2 9 500 1 75 1 416 1smb5915bt3 915b 3.70 3.9 4.10 96.1 7.5 500 1 25 1 384 1smb5916bt3 916b 4.08 4.3 4.52 87.2 6 500 1 5 1 348 1smb5917bt3 917b 4.46 4.7 4.94 79.8 5 500 1 5 1.5 319 1smb5918bt3 918b 4.84 5.1 5.36 73.5 4 350 1 5 2 294 1smb5919bt3 919b 5.32 5.6 5.88 66.9 2 250 1 5 3 267 1smb5920bt3 920b 5.89 6.2 6.51 60.5 2 200 1 5 4 241 1smb5921bt3 921b 6.46 6.8 7.14 55.1 2.5 200 1 5 5.2 220 1smb5922bt3 922b 7.12 7.5 7.88 50 3 400 0.5 5 6 200 1smb5923bt3 923b 7.79 8.2 8.61 45.7 3.5 400 0.5 5 6.5 182 1smb5924bt3 924b 8.64 9.1 9.56 41.2 4 500 0.5 5 7 164 1smb5925bt3 925b 9.5 10 10.5 37.5 4.5 500 0.25 5 8 150 1smb5926bt3 926b 10.45 11 11.55 34.1 5.5 550 0.25 1 8.4 136 1smb5927bt3 927b 11.4 12 12.6 31.2 6.5 550 0.25 1 9.1 125 1smb5928bt3 928b 12.35 13 13.65 28.8 7 550 0.25 1 9.9 115 1smb5929bt3 929b 14.25 15 15.75 25 9 600 0.25 1 11.4 100 1smb5930bt3 930b 15.2 16 16.8 23.4 10 600 0.25 1 12.2 93 1smb5931bt3 931b 17.1 18 18.9 20.8 12 650 0.25 1 13.7 83 1smb5932bt3 932b 19 20 21 18.7 14 650 0.25 1 15.2 75 1smb5933bt3 933b 20.9 22 23.1 17 17.5 650 0.25 1 16.7 68 1smb5934bt3 934b 22.8 24 25.2 15.6 19 700 0.25 1 18.2 62 1smb5935bt3 935b 25.65 27 28.35 13.9 23 700 0.25 1 20.6 55 1smb5936bt3 936b 28.5 30 31.5 12.5 28 750 0.25 1 22.8 50 1smb5937bt3 937b 31.35 33 34.65 11.4 33 800 0.25 1 25.1 45 1smb5938bt3 938b 34.2 36 37.8 10.4 38 850 0.25 1 27.4 41 1smb5939bt3 939b 37.05 39 40.95 9.6 45 900 0.25 1 29.7 38 1smb5940bt3 940b 40.85 43 45.15 8.7 53 950 0.25 1 32.7 34 1smb5941bt3 941b 44.65 47 49.35 8 67 1000 0.25 1 35.8 31 1smb5942bt3 942b 48.45 51 53.55 7.3 70 1100 0.25 1 38.8 29 1smb5943bt3 943b 53.2 56 58.8 6.7 86 1300 0.25 1 42.6 26 1smb5944bt3 944b 58.9 62 65.1 6 100 1500 0.25 1 47.1 24 1smb5945bt3 945b 64.6 68 71.4 5.5 120 1700 0.25 1 51.7 22 1smb5946bt3 946b 71.25 75 78.75 5 140 2000 0.25 1 56 20 1smb5947bt3 947b 77.9 82 86.1 4.6 160 2500 0.25 1 62.2 18 1smb5948bt3 948b 86.45 91 95.55 4.1 200 3000 0.25 1 69.2 16 1smb5949bt3 949b 95 100 105 3.7 250 3100 0.25 1 76 15 1smb5950bt3 950b 104.5 110 115.5 3.4 300 4000 0.25 1 83.6 13 1smb5951bt3 951b 114 120 126 3.1 380 4500 0.25 1 91.2 12 1smb5952bt3 952b 123.5 130 136.5 2.9 450 5000 0.25 1 98.8 11 1smb5953bt3 953b 142.5 150 157.5 2.5 600 6000 0.25 1 114 10 1smb5954bt3 954b 152 160 168 2.3 700 6500 0.25 1 121.6 9 1smb5955bt3 955b 171 180 189 2.1 900 7000 0.25 1 136.8 8 1smb5956bt3 956b 190 200 210 1.9 1200 8000 0.25 1 152 7 2. tolerance and type number designation the type numbers listed indicate a tolerance of 5%. 3. zener voltage (v z ) measurement nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature at 25 c. 4. zener impedance (z z ) derivation z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) with the ac frequency = 60 hz.
1smb5913bt3 series http://onsemi.com 4 figure 1. steady state power derating 0 25 50 75 100 125 150 6 5 4 3 2 0 t, temperature ( c) p , maximum power dissipation (watts) d 10 20 30 50 100 200 300 500 1k 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 pw, pulse width (ms) p , peak surge power (watts) pk figure 2. maximum surge power rectangular nonrepetitive waveform t j =25 c prior to initial pulse figure 3. zener voltage e to 12 volts 2 4 6 8 10 12 10 8 6 4 2 0 -2 -4 v z , zener voltage (volts) , temperature coefficient (mv/ c) q vz 012345678910 100 50 30 20 10 1 0.5 0.3 0.2 0.1 v z , zener voltage (volts) 2 5 3 0 10 203040 50 607080 90100 v z , zener voltage (volts) 100 50 30 20 10 1 0.5 0.3 0.2 0.1 2 5 3 1 v z @ i zt t l t a figure 4. zener voltage e 14 to 200 volts 200 100 70 50 30 20 10 10 20 30 50 70 100 200 v z , zener voltage (volts) v z @ i zt , temperature coefficient (mv/ c) q vz figure 5. v z = 3.3 thru 10 volts figure 6. v z = 12 thru 82 volts i zt , reverse current (ma) i zt , reverse current (ma)
1smb5913bt3 series http://onsemi.com 5 figure 7. effect of zener voltage v z , zener voltage (volts) 5 7 10 20 30 50 70 100 200 100 70 50 30 20 10 7 5 3 2 z , dynamic impedance (ohms) z 10ma i z(dc) = 1ma 20ma i z(rms) = 0.1 i z(dc) figure 8. effect of zener current i z , zener test current (ma) 1k 500 200 100 50 20 10 5 2 1 0.5 1 2 5 10 20 50 100 200 500 z , dynamic impedance (ohms) z t j = 25 c i z(rms) = 0.1 i z(dc) v z =150v 91v 62v 22v 12v 6.8v rating and typical characteristic curves (t a = 25 c) t a = 25 c pw (i d ) is defined as the point where the peak current decays to 50% of i pp . 10 m s peak value i ppm half value - i pp /2 10/1000 m s waveform as defined by r.e.a. t d 1000 figure 9. capacitance curve figure 10. typical pulse rating curve breakdown voltage (volts) figure 11. pulse waveform figure 12. pulse waveform 10 100 100 10 0.01 10 0.1 1 10 1 0.1 0.01 t p , pulse width (ms) 120 100 80 60 40 0 01 2 3 4 t, time (ms) 120 0 0.1 t, time (ms) measured @ zero bias measured @ v z /2 t j = 25 c c, capacitance (pf) p pk i ppm , peak pulse current (%) nonrepetitive, exponential pulse waveform, t j = 25 c 20 5 100 80 60 40 20 0.04 0.06 0.08 8/20 m s waveform as defined by ansi c62.1 and iec 801-5. 0.5 i peak 0.9 i peak 0.1 i peak t t = 8 m s 20 m s 0 0.02 i ppm , peak pulse current (%) , peak power (kw)
1smb5913bt3 series http://onsemi.com 6 outline dimensions 3 watt dc power zener voltage regulator diodes surface mounted smb do214aa case 403a03 issue d smb footprint a s d b j p k c h notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. dim min max min max millimeters inches a 0.160 0.180 4.06 4.57 b 0.130 0.150 3.30 3.81 c 0.075 0.095 1.90 2.41 d 0.077 0.083 1.96 2.11 h 0.0020 0.0060 0.051 0.152 j 0.006 0.012 0.15 0.30 k 0.030 0.050 0.76 1.27 p 0.020 ref 0.51 ref s 0.205 0.220 5.21 5.59 mm inches 0.085 2.159 0.108 2.743 0.089 2.261
1smb5913bt3 series http://onsemi.com 7 notes
1smb5913bt3 series http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. 1smb5913bt3/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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