? semiconductor components industries, llc, 2002 april, 2002 rev. 0 1 publication order number: nsr15dw1/d nsr15dw1 dual rf schottky diode these diodes are designed for analog and digital applications, including dc based signal detection and mixing applications. features: ? low capacitance (<1 pf) ? low v f (390 mv typical @ 1 ma) ? low v f (1 mv typical @ 1 ma) benefits: ? reduced parasitic losses ? accurate signal measurement maximum ratings rating symbol max unit peak reverse voltage v r 15 v forward current i f 30 ma operating and storage temperature range t j , t stg 65 to +150 c esd rating: class 1 per human body model esd rating: class a per machine model thermal characteristics characteristic symbol value unit maximum thermal resistance junction to ambient r ja 500 c/w rf schottky barrier diodes 15 volts, 30 ma marking diagram device package shipping ordering information nsr15dw1t1 sc88 3000/tape & reel 1 2 3 sc88 case 419b style 21 6 5 4 r5 = specific device code m = date code r5 m 12 3 654 http://onsemi.com
nsr15dw1 http://onsemi.com 2 electrical characteristics characteristic symbol min typ max unit breakdown voltage (i r = 10 a) v br 15 20 v reverse leakage (v r = 1 v) i r 2 50 na forward voltage (i f = 1 ma) v f1 390 415 mv forward voltage (i f = 10 ma) v f2 530 680 mv delta v f (i f = 1 ma, all diodes) v f 1 15 mv capacitance (v f = 0 v, f = 1 mhz) c t 0.8 1 pf figure 1. forward current versus forward voltage at temperatures v f , forward voltage (v) 100 10 1 0.1 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 figure 2. reverse current versus reverse voltage v r , reverse voltage (v) 15 10 5 0 10 k 1 k 100 10 1 0.01 100 k i f , forward current (ma) i r , reverse current (na) figure 3. total capacitance versus reverse voltage v r , reverse voltage (v) 1 0.9 0.7 0.6 8 6 5 4 3 2 1 0 figure 4. dynamic resistance versus forward current i f , forward current (ma) 100 10 1 0.1 100 10 1 0.5 1000 c t , capacitance (pf) r d , dynamic resistance ( ) 7 0.8 125 c 25 c 75 c 25 c 125 c 75 c 25 c
nsr15dw1 http://onsemi.com 3 figure 5. typical v f match at mixer bias levels v f , forward voltage (v) 100 10 1 0.1 0.7 0.6 0.5 0.4 0.3 0.8 figure 6. typical v f match at detector bias levels v f , forward voltage (v) 0.225 0.175 100 10 i f , forward current (ma) i f , forward current ( a) v f , forward voltage difference (mv) 0.275 0.325 1 0.1 1 10 v f , forward voltage differential (mv) i f (left scale) v f (right scale) 0.1 1 10 100 i f (left scale) v f (right scale) figure 7. typical output voltage versus input power, small signal detector operating at 850 mhz p in , input power (dbm) 1 0.1 0.01 0 5 15 20 25 30 35 40 figure 8. typical output voltage versus input power, large signal detector operating at 915 mhz p in , input power (dbm) 15 10 5 20 1 0.1 0.01 0.001 0.000001 0.001 10 v det , (vdc) figure 9. typical conversion loss versus l.o. drive, 2.0 ghz local oscillator power (dbm) 12 10 8 7 12 8 6 4 2 0 2 6 conversion loss (db) 10 9 10 15 10 5 0 30 25 20 0.0001 0.00001 v det , (vdc) 18 nh 3.3 nh v o rf in 100 pf 100 k nsr15dw1 68 v o rf in 100 pf 4.7 k nsr15dw1 dc bias = 3 a
nsr15dw1 http://onsemi.com 4 package dimensions sc88 (sot363) case 419b02 issue j notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 123 a g s h c n j k 654 b d 6 pl on semiconductor is a trademark and is a registered trademark of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circui t, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may b e provided in scillc data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its paten t rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. nsr15dw1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
|
