comset semiconductors 1/4 bdy23, 180 t2 bdy24, 181 t2 bdy25, 182 t2 absolute maximum ratings symbol ratings value unit bdy23, 180t2 60 bdy24, 181t2 90 v ceo collector-emitter voltage bdy25, 182t2 140 v bdy23, 180t2 60 bdy24, 181t2 100 v cbo collector-base voltage bdy25, 182t2 200 v v ebo emitter-base voltage bdy23, 180t2 bdy24, 181t2 bdy25, 182t2 10 v i c collector current bdy23, 180t2 bdy24, 181t2 bdy25, 182t2 6 a i b base current bdy23, 180t2 bdy24, 181t2 bdy25, 181t2 3 a p tot power dissipation @ t c = 25 bdy23, 180t2 bdy24, 181t2 bdy25, 182t2 87.5 watts t j junction temperature t stg storage temperature bdy23, 180t2 bdy24, 181t2 bdy25, 182t2 200 -65 to +200 c lf large signal power amplification high current fast switching npn silicon transistors, diffused mesa
comset semiconductors 2/4 bdy23, 180 t2 bdy24, 181 t2 bdy25, 182 t2 thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case bdy23, 180t2 bdy24, 181t2 bdy25, 182t2 2c/w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit bdy23, 180t2 60 - - bdy24, 181t2 90 - - v ceo(br) collector-emitter breakdown voltage (*) i c =50 ma, i b =0 bdy25, 182t2 140 - - v bdy23, 180t2 60 - - bdy24, 181t2 100 - - v (br)cbo collector-base breakdown voltage (*) i c =3 ma bdy25, 182t2 200 - - v v ce =60 v bdy23 -- v ce =90 v bdy24 -- i ceo collector-emitter cutoff current v ce =140 v bdy25 -- 1.0 ma i ebo emitter-base cutoff current v eb =10 v bdy23, 180t2 bdy24, 181t2 bdy25, 182t2 --1.0ma v ce =60 v v be =0 v bdy23, 180t2 --0.5 v ce =100 v v be =0 v bdy24, 181t2 --1.0 i ces collector-emitter cutoff current v ce =180 v v be =0 v bdy25, 182t2 --1.0 ma bdy23, 180t2 --1 bdy24, 181t2 --0.6 v ce(sat) collector-emitter saturation voltage (*) i c =2.0 a, i b =0.25 a bdy25, 182t2 --0.6 v
comset semiconductors 3/4 bdy23, 180 t2 bdy24, 181 t2 bdy25, 182 t2 symbol ratings test condition(s) min typ mx unit bdy23, 180t2 --2.0 bdy24, 181t2 --1.2 v be(sat) base-emitter voltage (*) i c =2.0 a, i b =0.25 a bdy25, 182t2 --1.2 v a - 55 - b - 65 - v ce =4 v, i c =1 a c - 90 - a 15 20 45 b 30 45 90 h 21e static forward current transfer ratio (*) v ce =4 v, i c =2 a c 75 82 100 - f t transition frequency v ce =15 v, i c =0.5 a, f=10 mhz bdy23, 180t2 bdy24, 181t2 bdy25, 182t2 10 - - mhz t d + t r turn-on time i c =5 a, i b =1 a bdy23, 180t2 bdy24, 181t2 bdy25, 182t2 -0.30.5 s t s + t f turn-off time i c =5 a, i b1 =1 a, i b2 =-0.5 a bdy23, 180t2 bdy24, 181t2 bdy25, 182t2 -1.52.0 s (*) pulse width 300 s, duty cycle 2.0%
comset semiconductors 4/4 bdy23, 180 t2 bdy24, 181 t2 bdy25, 182 t2 mechanical data case to-3 dimensions mm inches a 25,45 1 b 38,8 1,52 c 30,09 1,184 d 17,11 0,67 e 9,78 0,38 g 11,09 0,43 h 8,33 0,32 l 1,62 0,06 m 19,43 0,76 n 1 0,04 p 4,08 0,16 pin 1 : base pin 2 : emitter case : collector
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