vishay siliconix SIR428DP new product document number: 64987 s09-1093-rev. a, 15-jun-09 www.vishay.com 1 n-channel 30-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? synchronous rectification ?vrm ? server product summary v ds (v) r ds(on) ( ) i d (a) a, g q g (typ.) 30 0.0075 at v gs = 10 v 30 g 9.5 nc 0.0095 at v gs = 4.5 v 30 g ordering information: SIR428DP-t1-ge3 (lead (pb)-free and halogen-free) 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak ? so-8 bottom view n-channel mosfet g d s notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak so-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulatio n process in manufacturing. a solder fill et at the exposed copper tip cannot be guara nteed and is not required to ensure adequate botto m side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 70 c/w. g. package limited. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 30 g a t c = 70 c 30 g t a = 25 c 17.4 b, c t a = 70 c 13.8 b, c pulsed drain current i dm 60 continuous source-drain diode current t c = 25 c i s 30 g t a = 25 c 3.7 b, c single pulse avalanche current l = 0.1 mh i as 20 single pulse avalanche energy e as 20 mj maximum power dissipation t c = 25 c p d 22.7 w t c = 70 c 14.5 t a = 25 c 4.1 b, c t a = 70 c 2.6 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 10 s r thja 22 30 c/w maximum junction-to-case (drain) steady state r thjc 4.5 5.5
www.vishay.com 2 document number: 64987 s09-1093-rev. a, 15-jun-09 vishay siliconix SIR428DP new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient v ds /t j i d = 250 a 27 mv/c v gs(th) temperature coefficient v gs(th) /t j - 4.4 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 10 a 0.0061 0.0075 v gs = 4.5 v, i d = 10 a 0.0077 0.0095 forward transconductance a g fs v ds = 10 v, i d = 10 a 46 s dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 1117 pf output capacitance c oss 274 reverse transfer capacitance c rss 80 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 10 a 21 32 nc v ds = 15 v, v gs = 4.5 v, i d = 10 a 9.5 14.5 gate-source charge q gs 2.8 gate-drain charge q gd 2.8 gate resistance r g f = 1 mhz 0.2 0.5 1.0 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 10 v, r g = 1 816 ns rise time t r 10 20 turn-off delay time t d(off) 17 34 fall time t f 816 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 1 i d ? 10 a, v gen = 4.5 v, r g = 1 16 32 rise time t r 11 22 turn-off delay time t d(off) 18 36 fall time t f 918 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 30 a pulse diode forward current a i sm 60 body diode voltage v sd i s = 3 a 0.75 1.1 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 22 40 ns body diode reverse recovery charge q rr 15.5 28 nc reverse recovery fall time t a 14 ns reverse recovery rise time t b 8
document number: 64987 s09-1093-rev. a, 15-jun-09 www.vishay.com 3 vishay siliconix SIR428DP new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 12 24 36 4 8 60 0.0 0.5 1.0 1.5 2.0 2.5 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10 v thr u 4 v v gs =3 v 0.005 0.006 0.007 0.00 8 0.009 0.010 0 1224364 8 60 - on-resistance ( r ds(on) w ) i d - drain c u rrent (a) v gs =4.5 v v gs =10 v 0 2 4 6 8 10 0.0 4.4 8 . 8 13.2 17.6 22.0 i d =10a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =20 v v ds =10 v v ds =15 v transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 012345 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c =25 c t c = 125 c t c =--55 c c rss 0 300 600 900 1200 1500 0 6 12 1 8 24 30 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) ( n ormalized) r ds(on) - on-resistance v gs =4.5 v i d =10a v gs =10 v
www.vishay.com 4 document number: 64987 s09-1093-rev. a, 15-jun-09 vishay siliconix SIR428DP new product typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c - 1 . 0 - 0 . 7 - 0 . 4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) i d =5 ma on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.000 0.006 0.012 0.01 8 0.024 0.030 01234567 8 910 r ds(on) - on-resistance ( ) v gs - gate-to-so u rce v oltage ( v ) t j = 25 c t j = 125 c i d = 10 a 0 40 8 0 120 160 200 0 1 1 1 0 0 . 00.01 time (s) po w er ( w ) 0.1 safe operating area, junction-to-ambient 0.01 100 1 100 0.01 i d - drain c u rrent (a) 0.1 v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 1ms 10 ms 100 ms 0.1 1 10 10 t a = 25 c single p u lse limited b yr ds(on) * 1s dc 10 s b v dss limited
document number: 64987 s09-1093-rev. a, 15-jun-09 www.vishay.com 5 vishay siliconix SIR428DP new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 9 1 8 27 36 45 t c - case temperat u re (c) i d - drain c u rrent (a) 0 25 50 75 100 125 150 package limited power, junction-to-case 0.0 5.6 11.2 16. 8 22.4 2 8 .0 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) power, junction-to-ambient 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 t a - am b ient temperat u re (c) po w er ( w )
www.vishay.com 6 document number: 64987 s09-1093-rev. a, 15-jun-09 vishay siliconix SIR428DP new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64987 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 70 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 0.02 normalized thermal transient impedance, junction-to-case 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse 0.02 0.05
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