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| Datasheet File OCR Text: |
| geometry principal device types cfsh2-3l gross die per 5 inch wafer 80,698 process CPD104R schottky diode low vf schottky diode chip process details die size 14.6 x 14.6 mils die thickness 3.9 mils anode bonding pad area 11.8 x 11.8 mils top side metalization al - 30,000? back side metalization au - 12,000? www.centralsemi.com r0 (1-february 2011)
process CPD104R typical electrical characteristics www.centralsemi.com r0 (1-february 2011) |
Price & Availability of CPD104R
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