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| savantic semiconductor product specification silicon npn power transistors BU546 description with to-3 package high voltage fast switching speed applications for color tv horizontal deflection circuits. pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1300 v v ceo collector-emitter voltage open base 550 v v ebo emitter-base voltage open collector 7 v i c collector current 6 a p t total power dissipation t c =25 100 w t j junction temperature 175 t stg storage temperature -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.0 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BU546 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0; 550 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0; 7 v v cesat collector-emitter saturation voltage i c =3.2a;i b =0.8a 2.0 v v besat base-emitter saturation voltage i c =3.2a;i b =0.8a 1.3 v i cbo collector cut-off current v cb =1300v;i e =0 1.0 ma i ebo emitter cut-off current v eb =5v;i c =0 0.1 ma h fe dc current gain i c =1.5a ; v ce =5v 8 savantic semiconductor product specification 3 silicon npn power transistors BU546 package outline fig.2 outline dimensions |
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