absolute maximum ratings (ta = 25?) item symbol rating unit collector to base voltage v cbo 400 v collector to emitter voltage v ceo 300 v emitter to base voltage v ebo 7v collector current i c 6a collector peak current i c(peak) 10 a collector power dissipation p c *1 50 w junction temperature tj 150 ? storage temperature tstg ?5 to ? +150 note: 1. value at t c = 25?. electrical characteristics (ta = 25?) item symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo 400 v i c = 0.1 ma, i e = 0 collector to emitter sustain voltage v ceo(sus) 300 v i c = 4 a, pw = 50 ?, f = 50 hz, l = 10 mh emitter to base breakdown voltage v (br)ebo 7 v i e = 50 ma, i c = 0 collector cutoff current i ceo 100 ? v ce = 300 v, r be = dc current transfer ratio h fe 500 v ce = 2 v, i c = 4 a *1 collector to emitter saturation voltage v ce(sat) 1.5 v i c = 4 a, i b = 40 ma *1 base to emitter saturation voltage v be(sat) 2.0 v turn on time t on 2.0 s i c = 4 a, i b1 = ? b2 = 40 ma turn off time t off ?3 s note: 1. pulse test. see characteristics curves of 2sd991 k . 1 2 3 300 ? typ 150 ? typ 2 3 1 1. base 2. collector (flange) 3. emitter to-220ab 2sd1114 k silicon npn triple diffused high voltage switching, igniter
maximum collector dissipation curve case temperature t c (?) 60 40 20 0 50 100 150 collector peak current p c (w) 2sd1114 k
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