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page 1 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram 1gb m-die ddr2 sdram specification version 1.1 january 2005
page 2 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram contents 0. ordering information 1. key feature 2. package pinout/mechnical dimension & addressing 2.1 package pintout & mechnical dimension 2.2 input/output function description 2.3 addressing 3. absolute maximum rating 4. ac & dc operating condi tions & specifications
page 3 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram 1.key features note : this data sheet is an abstract of full ddr2 specification and does not co ver the common features which are described in ?ddr2 sdram device operation & timing diagram?. speed ddr2-533 4-4-4 ddr2-400 3-3-3 units cas latency 43 tck trcd(min) 15 15 ns trp(min) 15 15 ns trc(min) 55 55 ns 0. ordering information note : speed bin is in order of cl-trcd-trp organization ddr2-533 4-4-4 ddr2-400 3-3-3 package 256mx4 k4t1g044qm-zcd5 k4t1g044qm-zccc lead-free 128mx8 k4t1g084qm-zcd5 K4T1G084QM-ZCCC lead-free 64mx16 k4t1g164qm-zcd5 k4t1g164qm-zccc lead-free ? jedec standard 1.8v 0.1v power supply ? vddq = 1.8v 0.1v ? 200 mhz f ck for 400mb/sec/pin, 267mhz f ck for 533mb/sec/pin. ? 8 banks ?posted cas ? programmable cas latency: 3, 4, 5 ? programmable additive latency: 0, 1 , 2 , 3 and 4 ? write latency(wl) = read latency(rl) -1 ? burst length: 4 , 8(interleave/nibble sequential) ? programmable sequential / interleave burst mode ? bi-directional differential data-strobe (single-ended data-strobe is an optional feature) ? off-chip driver(ocd) impedance adjustment ? on die termination ? average refresh period 7.8us at lower than t case 85 c, 3.9us at 85 c < t case < 95 c ? package: 68ball fbga - 256mx4/128mx8 , 92ball fbga - 64mx16 ? all of lead-free products are compliant for rohs the 1gb ddr2 sdram is organized as a 32mbit x 4 i/os x 8 banks, 16mbit x 8 i/os x 8b anks or 8mbit x 16 i/os x 8 banks device. this synchronous device achieves high speed double-data-rate transfer rates of up to 533mb/sec/pin (ddr2-533) for general applications. the chip is designed to comply with the following key ddr2 sdram features such as posted cas with additive latency, write latency = re ad latency - 1, off-chip driver(ocd) impedance adjustment and on die termina- tion. all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. inputs are latched at the crosspoint of differential clocks (ck rising and ck falling). all i/os are sy nchronized with a pair of bidirectional strobes (dqs and dqs ) in a source synchro- nous fashion. the address bus is used to convey row, col- umn, and bank address information in a ras /cas multiplexing style. for example, 1gb(x4) device receive 14/11/3 addressing. the 1gb ddr2 device operates with a single 1.8v 0.1v power supply and 1.8v 0.1v vddq. the 1gb ddr2 device is available in 68ball fbgas(x4/x8) and in 92ball fbgas(x16). note: the functionality described and the timing specifica- tions included in this data sheet are for the dll enabled mode of operation.
page 4 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram 2. package pinout/mechnical dimension & addressing 2.1 package pinout notes: 1. pin e3 has identical capacitance as pin e7. 2. vddl and vssdl are power and ground for the dll. x4 package pinout (top view) : 68ball fbga package (60balls + 8balls of dummy balls) a b c d e f g h j k l vdd nc vss nc vssq dm vddq vddq vddq vssq vssq dqs dqs nc dq0 vddq dq2 vssq nc vssdl vdd ck ras ck cas cs a2 a6 a4 a11 a8 nc a13 nc a12 a9 a7 a5 a0 vdd a10/ap vss vddq vssq dq1 dq3 nc vddl a1 a3 ba1 vref vss cke we ba0 1 2 3 7 8 9 vdd vss odt ba2 ball locations (x4) : populated ball + : depopulated ball top view (see the balls through the package) nc nc nc nc m n p r t u v w nc nc nc nc + + + + + + + + + + + + + + + + + + + + + + + + + + ++ + + 123456789 a b c d e f g h j k l + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + ++ + + + + + + + + + + + + + + + + + + + + + + + + + + + +++ ++ +++ +++ m n p r t u v w +
page 5 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram notes: 1. pins f3 and e2 have identical capacitance as pins f7 and e8. 2. for a read, when enabled, strobe pair rdqs & rdqs are identical in function and timing to strobe pair dqs & dqs and input masking function is disabled. 3. the function of dm or rdqs/rdqs are enabled by emrs command. 4. vddl and vssdl are power and ground for the dll. x8 package pinout (top view) : 68ball fbga package (60balls + 8balls of dummy balls) a b c d e f g h j k l vdd nu/ vss dq6 vssq vddq vddq vddq vssq vssq dqs dqs dq7 dq0 vddq dq2 vssq dq5 vssdl vdd ck ras ck cas cs a2 a6 a4 a11 a8 nc a13 nc a12 a9 a7 a5 a0 vdd a10/ap vss vddq vssq dq1 dq3 dq4 vddl a1 a3 ba1 vref vss cke we ba0 1 2 3 7 8 9 vdd vss odt ba2 nc nc nc nc m n p r t u v w nc nc nc nc ball locations (x8) : populated ball + : depopulated ball top view (see the balls through the package) + + + + + + + + + + + + + + + + + + + + + + + + + + ++ + + 123456789 a b c d e f g h j k l + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + ++ + + + + + + + + + + + + + + + + + + + + + + + + + + + +++ ++ +++ +++ m n p r t u v w dm/ rdqs rdqs +
page 6 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram note : 1. vddl and vssdl are power and ground for the dll. x16 package pinout (top view) : 92ball fbga package (84balls + 8balls of dummy balls) a b c d e f g h j k l vdd nc vss dq14 vssq udm vddq vddq vddq vssq vssq udqs udqs dq15 dq8 vddq dq10 vssq dq13 vssq vddq ras ck cas cs a2 a6 a4 a11 a8 nc nc nc a12 a9 a7 a5 a0 vdd a10/ap vss vddq vssq dq9 dq11 dq12 vdd a1 a3 ba1 nc vss cke we ba0 1 2 3 7 8 9 vdd vss odt ba2 ball locations (x16) : populated ball + : depopulated ball top view (see the balls through the package) nc nc nc nc m n p r t u v w dq6 vssq ldm vddq vddq vssq ldqs dq7 dq0 vddq dq2 vssq dq5 vssdl vdd ck vddq vssq dq1 dq3 dq4 vddl vref vss ldqs x aa nc nc nc nc 123456789 + + + + + + + + + + + + + + + + + + + + + + + + + + ++ + + + + + + + + + + + + + + + + + + + + + + + + + ++ + + + + + + + + + + + + + + + + + + +++ ++ +++ +++ +++ + + + + + + + + + a b c d e f g h j k l m n p r t u v w x aa +
page 7 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram fbga package dimension(x4/x8) 21.70 0.10 11.00 0.10 (5.50) (0.90) (1.80) 21.70 0.10 11.00 0.10 #a1 0.45 0.05 0.10max 0.35 0.05 max.1.20 # a1 index mark
page 8 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram fbga package dimension(x16) 21.70 0.10 11.00 0.10 (5.50) (0.90) (1.80) 21.70 0.10 11.00 0.10 #a1 0.10max 0.35 0.05 max.1.20 # a1 index mark 0.45 0.05
page 9 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram 2.2 input/output functional description symbol type function ck, ck input clock: ck and ck are differential clock inputs. all address and control input signals are sampled on the crossing of the positive edge of ck and negative edge of ck . output (read) data is refer- enced to the crossings of ck and ck (both directions of crossing). cke input clock enable: cke high activates, and cke low deactivates, internal clock signals and device input buffers and output drivers. taking cke low provides precharge power-down and self refresh operation (all banks idle), or active power-down (row active in any bank). cke is syn- chronous for power down entry and exit, and for self refresh entry. cke is asynchronous for self refresh exit. after v ref has become stable during the power on and initialization swquence, it must be maintained for proper operation of the cke receiver. for proper self-refresh entry and exit, v ref must be maintained to this input. cke must be maintained high throughout read and write accesses. input buffers, excluding ck, ck , odt and cke are disabled during power-down. input buffers, excluding cke, are disabled during self refresh. cs input chip select: all commands are masked when cs is registered high. cs provides for external rank selection on systems with multiple ranks. cs is considered part of the command code. odt input on die termination: odt (registered high) enables termination resistance internal to the ddr2 sdram. when enabled, odt is only applied to each dq, dqs, dqs , rdqs, rdqs, and dm signal for x4/x8 configurations. for x16 configuration, odt is applied to each dq, udqs/udqs , ldqs/ldqs , udm, and ldm signal. the odt pin will be ignored if the extended mode register set(emrs) is programmed to disable odt. ras , cas , we input command inputs: ras , cas and we (along with cs ) define the command being entered. dm input input data mask: dm is an input mask signal for write data. input data is masked when dm is sampled high coincident with that input data during a write access. dm is sampled on both edges of dqs. although dm pins are input only, the dm loading matches the dq and dqs load- ing. for x8 device, the function of dm or rdqs/rdqs is enabled by emrs command. ba0 - ba2 input bank address inputs: ba0, ba1 and ba2 define to which bank an active, read, write or pre- charge command is being applied. bank address also determines if the mode register or extended mode register is to be accessed during a mrs or emrs cycle. a0 - a13 input address inputs: provided the row address for active commands and the column address and auto precharge bit for read/write commands to select one location out of the memory array in the respective bank. a10 is sampled during a precharge command to determine whether the pre- charge applies to one bank (a10 low) or all banks (a10 high). if only one bank is to be pre- charged, the bank is selected by ba0, ba1 and ba2. the address inputs also provide the op-code during mode register set commands. dq input/output data input/ output: bi-directional data bus. dqs, (dqs ) (ldqs), (ldqs ) (udqs), (udqs ) (rdqs), (rdqs ) input/output data strobe: output with read data, input with write data. edge-aligned with read data, centered in write data. for the x16, ldqs corresponds to the data on dq0-dq7; udqs corresponds to the data on dq8-dq15. for the x8, an rdqs option using dm pin can be enabled via the emrs(1) to simplify read timing. the data strobes dqs, ldqs, udqs, and rdqs may be used in single ended mode or paired with optional complementary signals dqs , ldqs , udqs , and rdqs to provide differential pair signaling to the system during both reads and writes. an emrs(1) control bit enables or disables all complementary data strobe signals. nc no connect: no internal electrical connection is present. v dd /v ddq supply power supply: 1.8v +/- 0.1v, dq power supply: 1.8v +/- 0.1v v ss /v ssq supply ground , dq ground v ddl supply dll power supply: 1.8v +/- 0.1v v ssdl supply dll ground v ref supply reference voltage in this data sheet, "diffe rential dqs signals" refers to any of the following with a10 = 0 of emrs(1) x4 dqs/dqs x8 dqs/dqs if emrs(1)[a11] = 0 x8 dqs/dqs , rdqs/rdqs , if emrs(1)[a11] = 1 x16 ldqs/ldqs and udqs/udqs "single-ended dqs signals" refers to any of the following with a10 = 1 of emrs(1) x4 dqs x8 dqs if emrs(1) [a11] = 0 x8 dqs, rdqs, if emrs(1) [a11] = 1 x16 ldqs and udqs
page 10 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram 2.3 1gb addressing * reference information: the following tables are address mapping information for other densities. 256mb 512mb 2gb 4gb configuration 256mb x4 128mb x 8 64mb x16 # of bank 8 8 8 bank address ba0 ~ ba2 ba0 ~ ba2 ba0 ~ ba2 auto precharge a 10 /ap a 10 /ap a 10 /ap row address a 0 ~ a 13 a 0 ~ a 13 a 0 ~ a 12 column address a 0 ~ a 9, a 11 a 0 ~ a 9 a 0 ~ a 9 configuration 64mb x4 32mb x 8 16mb x16 # of bank 4 4 4 bank address ba0,ba1 ba0,ba1 ba0,ba1 auto precharge a 10 /ap a 10 /ap a 10 /ap row address a 0 ~ a 12 a 0 ~ a 12 a 0 ~ a 12 column address a 0 ~ a 9, a 11 a 0 ~ a 9 a 0 ~ a 8 configuration 128mb x4 64mb x 8 32mb x16 # of bank 4 4 4 bank address ba0,ba1 ba0,ba1 ba0,ba1 auto precharge a 10 /ap a 10 /ap a 10 /ap row address a 0 ~ a 13 a 0 ~ a 13 a 0 ~ a 12 column address a 0 ~ a 9, a 11 a 0 ~ a 9 a 0 ~ a 9 configuration 512mb x4 256mb x 8 128mb x16 # of bank 8 8 8 bank address ba0 ~ ba2 ba0 ~ ba2 ba0 ~ ba2 auto precharge a 10 /ap a 10 /ap a 10 /ap row address a 0 ~ a 14 a 0 ~ a 14 a 0 ~ a 13 column address a 0 ~ a 9, a 11 a 0 ~ a 9 a 0 ~ a 9 configuration 1 gb x4 512mb x 8 256mb x16 # of bank 8 8 8 bank address ba0 ~ ba2 ba0 ~ ba2 ba0 ~ ba2 auto precharge a 10 /ap a 10 /ap a 10 /ap row address a 0 - a 15 a 0 - a 15 a 0 - a 14 column address/page size a 0 - a 9, a 11 a 0 - a 9 a 0 - a 9
page 11 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram 3. absolute maximum dc ratings 4. ac & dc operating conditions recommended dc operating conditions (sstl - 1.8) symbol parameter rating units notes vdd voltage on vdd pin relative to vss - 1.0 v ~ 2.3 v v 1 vddq voltage on vddq pin relative to vss - 0.5 v ~ 2.3 v v 1 vddl voltage on vddl pin relative to vss - 0.5 v ~ 2.3 v v 1 v in , v out voltage on any pin relative to vss - 0.5 v ~ 2.3 v v 1 t stg storage temperature -55 to +100 c 1, 2 1. stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operati onal sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect r eli- ability. 2. storage temperature is the case surface temperature on the center/top side of the dram. for the measurement conditions, plea se refer to jesd51-2 standard. symbol parameter rating units notes min. typ. max. vdd supply voltage 1.7 1.8 1.9 v vddl supply voltage for dll 1.7 1.8 1.9 v 4 vddq supply voltage for output 1.7 1.8 1.9 v 4 vref input reference voltage 0.49*vddq 0.50*vddq 0.51*vddq mv 1,2 vtt termination voltage v ref -0.04 v ref v ref +0.04 v 3 there is no specific device vdd supply voltage requirement for sstl-1.8 compliance. however under all conditions vddq must be less than or equal to vdd. 1. the value of vref may be selected by the user to provide optimum noise margin in the system. typically the value of vref is expected to be about 0.5 x vddq of the transmitting device and vref is expected to track variations in vddq. 2. peak to peak ac noise on vref may not exceed +/-2% vref(dc). 3. vtt of transmitting device must track vref of receiving device. 4. ac parameters are measured with vdd, vddq and vddl tied together.
page 12 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram operating temper ature condition 1. operating temperature is the case surface temperature on the center/top side of the dram. for the measurement conditions, please refer to jesd51.2 standard. 2. at 85 - 95 c operation temperature range, doubling refresh commands in frequency to a 32ms period ( trefi=3.9 us ) is required, and to enter to self refresh mode at this temperature range, an emrs command is required to change internal refresh rate. input dc logic level input ac logic level ac input test conditions notes: 1. input waveform timing is referenced to the input signal crossing through the v ih/il (ac) level applied to the device under test. 2. the input signal minimum slew rate is to be maintained over the range from v ref to v ih (ac) min for rising edges and the range from v ref to v il (ac) max for falling edges as shown in the below figure. 3. ac timings are referenced with input waveforms switching from v il (ac) to v ih (ac) on the positive transitions and v ih (ac) to v il (ac) on the negative transitions. symbol parameter rating units notes toper operating temperature 0 to 95 c 1, 2, 3 symbol parameter min. max. units notes v ih (dc) dc input logic high v ref + 0.125 v ddq + 0.3 v v il (dc) dc input logic low - 0.3 v ref - 0.125 v symbol parameter min. max. units notes v ih (ac) ac input logic high v ref + 0.250 - v v il (ac) ac input logic low -v ref - 0.250 v symbol condition value units notes v ref input reference voltage 0.5 * v ddq v1 v swing(max) input signal maximum peak to peak swing 1.0 v 1 slew input signal minimum slew rate 1.0 v/ns 2, 3 v ddq v ih (ac) min v ih (dc) min v ref v il (dc) max v il (ac) max v ss < ac input test signal waveform > v swing(max) delta tr delta tf v ref - v il (ac) max delta tf falling slew = rising slew = v ih (ac) min - v ref delta tr
page 13 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram differential input ac logic level notes: 1. v id (ac) specifies the input differential voltage |v tr -v cp | required for switching, where v tr is the true input signal (such as ck, dqs, ldqs or udqs) and v cp is the complementary input signal (such as ck , dqs , ldqs or udqs ). the minimum value is equal to v ih (ac) - v il (ac). 2. the typical value of v ix (ac) is expected to be about 0.5 * vddq of the transmitting device and v ix (ac) is expected to track variations in vddq . v ix (ac) indicates the voltage at which differential input signals must cross. differential ac output parameters note : 1. the typical value of v ox (ac) is expected to be about 0.5 * vddq of the transmitting device and v ox (ac) is expected to track variations in vddq . v ox (ac) indicates the voltage at which differential output signals must cross. symbol parameter min. max. units notes v id(ac) ac differential input voltage 0.5 v ddq + 0.6 v 1 v ix(ac) ac differential cross point voltage 0.5 * vddq - 0.175 0.5 * vddq + 0.175 v 2 symbol parameter min. max. units note v ox (ac) ac differential cross point voltage 0.5 * vddq - 0.125 0.5 * vddq + 0.125 v 1 v ddq crossing point v ssq v tr v cp v id v ix or v ox < differential signal levels >
page 14 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram ocd default characteristics notes: 1. absolute specifications (0c t case +95c; vdd = +1.8v 0.1v, vddq = +1.8v 0.1v) 2. impedance measurement condition for output source dc current: vddq = 1.7v; vout = 1420mv; (vout-vddq)/ioh must be less than 23.4 ohms fo r values of vout between vddq and vddq- 280mv. impedance measurement condition for output sink dc current: vddq = 1.7v; vout = 280mv; vout/iol must be less than 23.4 ohms fo r values of vout between 0v and 280mv. 3. mismatch is absolute value be tween pull-up and pull-dn, both are measured at same temperature and voltage. 4. slew rate measured from v il (ac) to v ih (ac). 5. the absolute value of the slew rate as measured from dc to dc is equal to or greater than the slew rate as measured from ac to ac. this is guaranteed by design and characterization. 6. this represents the step size when the ocd is near 18 ohms at nominal conditions across all process and represents only the dram uncertainty. output slew rate load : 7. dram output slew rate specification applies to 400mb/sec/pin and 533mb/sec/pin speed bins. 8. timing skew due to dram output slew rate mis-match between dqs / dqs and associated dqs is included in tdqsq and tqhs specification. description parameter min nom max unit notes output impedance 12.6 18 23.4 ohms 1,2 output impedance step size for ocd calibration 01.5ohms6 pull-up and pull-down mismatch 0 4 ohms 1,2,3 output slew rate sout 1.5 5 v/ns 1,4,5,6,7,8 25 ohms v tt output (v out) reference point
page 15 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram idd specification paramete rs and test conditions (idd values are for full operating range of voltage and temperature, notes 1 - 5) symbol proposed conditions units notes idd0 operating one bank active-precharge current ; t ck = t ck(idd), t rc = t rc(idd), t ras = t rasmin(idd); cke is high, cs\ is high between valid commands; address bus inputs are switching; data bus inputs are switching ma idd1 operating one bank active-read-precharge current ; iout = 0ma; bl = 4, cl = cl(idd), al = 0; t ck = t ck(idd), t rc = t rc (idd), t ras = t ras- min(idd), t rcd = t rcd(idd); cke is high, cs\ is high between valid commands; address busin- puts are switching; data pattern is same as idd4w ma idd2p precharge power-down current ; all banks idle; t ck = t ck(idd); cke is low; other control and address bus inputs are stable; data bus inputs are floating ma idd2q precharge quiet standby current ; all banks idle; t ck = t ck(idd); cke is high, cs\ is high; other control and address bus inputsare stable; data bus inputs are floating ma idd2n precharge standby current ; all banks idle; t ck = t ck(idd); cke is high, cs\ is high; other control and address bus inputs are switching; data bus inputs are switching ma idd3p active power-down current ; all banks open; t ck = t ck(idd); cke is low; other control and address bus inputs are stable; data bus inputs are floating fast pdn exit mrs(12) = 0ma ma slow pdn exit mrs(12) = 1ma ma idd3n active standby current ; all banks open; t ck = t ck(idd), t ras = t rasmax(idd), t rp = t rp(idd); cke is high, cs\ is high between valid commands; other control and address bus inputs are switching; data bus inputs are switching ma idd4w operating burst write current ; all banks open, continuous burst writes; bl = 4, cl = cl(idd), al = 0; t ck = t ck(idd), t ras = t rasmax(idd), t rp = t rp(idd); cke is high, cs\ is high between valid commands; address bus inputs are switching; data bus inputs are switching ma idd4r operating burst read current ; all banks open, continuous burst reads, iout = 0ma; bl = 4, cl = cl(idd), al = 0; t ck = t ck(idd), t ras = t rasmax(idd), t rp = t rp(idd); cke is high, cs\ is high between valid com- mands; address bus inputs are switching; data pattern is same as idd4w ma idd5b burst auto refresh current ; t ck = t ck(idd); refresh command at every t rfc(idd) interval; cke is high, cs\ is high between valid commands; other control and address bus inputs are switching; data bus inputs are switching ma idd6 self refresh current ; ck and ck\ at 0v; cke 0.2v; other control and address bus inputs are floating; data bus inputs are floating normal ma low power ma idd7 operating bank interleave read current ; all bank interleaving reads, iout = 0ma; bl = 4, cl = cl(idd), al = t rcd(idd)-1* t ck(idd); t ck = t ck(idd), t rc = t rc(idd), t rrd = t rrd(idd), t rcd = 1* t ck(idd); cke is high, cs\ is high between valid commands; address bus inputs are stable during deselects; data pattern is same as idd4r; refer to the following page for detailed timing conditions ma
page 16 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram notes : 1. idd specifications are tested after the device is properly initialized 2. input slew rate is specified by ac parametric test condition 3. idd parameters are specified with odt disabled. 4. data bus consists of dq, dm, dqs, dqs\, rdqs, rdqs\, ldqs, ldqs\, udqs, and udqs\. idd values must be met with all combi- nations of emrs bits 10 and 11. 5. definitions for idd low is defined as vin vilac(max) high is defined as vin vihac(min) stable is defined as inputs stable at a high or low level floating is defined as inputs at vref = vddq/2 switching is defined as: inputs changing between high and low every other clock cycle (once per two clocks) for address and control signals, and inputs changing between high and low every other data transfer (once per clock) for dq signals not includi ng masks or strobes. for purposes of idd testing, the following parameters are utilized detailed idd7 the detailed timings are shown below for idd7. legend: a = active; ra = read with autoprecharge; d = deselect idd7: operating current: all bank interleave read operation all banks are being interleaved at minimum t rc(idd) without violating t rrd(idd) using a burst length of 4. control and address bus inputs are stable during deselects. iout = 0ma timing patterns for 8bank devices x4/ x8 -ddr2-400 3/3/3 : a0 ra0 a1 ra1 a2 ra2 a3 ra3 a4 ra4 a5 ra5 a6 ra6 a7 ra7 -ddr2-533 4/4/4 : a0 ra0 a1 ra1 a2 ra2 a3 ra3 d d a4 ra4 a5 ra5 a6 ra6 a7 ra7 d d timing patterns for 8bank devices x16 -ddr2-400 3/3/3 : a0 ra0 a1 ra1 a2 ra2 a3 ra3 d d a4 ra4 a5 ra5 a6 ra6 a7 ra7 d d -ddr2-533 4/4/4 : a0 ra0 d a1 ra1 d a2 ra2 d a3 ra3 d d d a4 ra4 d a5 ra5 d a6 ra6 d a7 ra7 d d d ddr2-533 ddr2-400 parameter 4-4-4 3-3-3 units cl(idd) 4 3 tck t rcd(idd) 15 15 ns t rc(idd) 60 55 ns t rrd(idd)-x4/x8 7.5 7.5 ns t rrd(idd)-x16 10 10 ns t ck(idd) 3.75 5 ns t rasmin(idd) 45 40 ns t rp(idd) 15 15 ns t rfc(idd) 127.5 127.5 ns
page 17 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram ddr2 sdram idd spec table symbol 256mx4(k4t1g044qm) unit notes d5(ddr2-533@cl=4) cc(ddr2-400@cl=3) idd0 tbd 90 ma idd1 tbd 100 ma idd2p tbd 12 ma idd2q tbd 30 ma idd2n tbd 35 ma idd3p-f tbd 30 ma idd3p-s tbd 20 ma idd3n tbd 60 ma idd4w tbd 145 ma idd4r tbd 145 ma idd5b tbd 270 ma idd6 normal tbd 12 ma idd7 tbd 350 ma symbol 128mx8(k4t1g084qm) unit notes d5(ddr2-533@cl=4) cc(ddr2-400@cl=3) idd0 tbd 90 ma idd1 tbd 100 ma idd2p tbd 12 ma idd2q tbd 30 ma idd2n tbd 35 ma idd3p-f tbd 30 ma idd3p-s tbd 20 ma idd3n tbd 60 ma idd4w tbd 160 ma idd4r tbd 150 ma idd5b tbd 270 ma idd6 normal tbd 12 ma idd7 tbd 360 ma symbol 64mx16(k4t1g164qm) unit notes d5(ddr2-533@cl=4) cc(ddr2-400@cl=3) idd0 tbd 120 ma idd1 tbd 135 ma idd2p tbd 12 ma idd2q tbd 30 ma idd2n tbd 35 ma idd3p-f tbd 30 ma idd3p-s tbd 20 ma idd3n tbd 60 ma idd4w tbd 190 ma idd4r tbd 185 ma idd5b tbd 270 ma idd6 normal tbd 12 ma idd7 tbd 430 ma
page 18 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram input/output capacitance electrical characteristics & ac timing for ddr2-533/400 (0 c < t case < 95 c; v ddq = 1.8v + 0.1v; v dd = 1.8v + 0.1v) refresh parameters by device density speed bins and cl, trcd, trp, trc and tras for corresponding bin parameter symbol ddr2-400 ddr2-533 min max min max units input capacitance, ck and ck cck 1.0 2.0 1.0 2.0 pf input capacitance delta, ck and ck cdck x 0.25 x 0.25 pf input capacitance, all other input-only pins ci 1.0 2.0 1.0 2.0 pf input capacitance delta, all other input-only pins cdi x 0.25 x 0.25 pf input/output capacitance, dq, dm, dqs, dqs cio 2.5 4.0 2.5 4.0 pf input/output capacitance delta, dq, dm, dqs, dqs cdio x 0.5 x 0.5 pf parameter symbol 256mb 512mb 1gb 2gb 4gb units refresh to active/refresh command time trfc 75 105 127.5 195 327.5 ns average periodic refresh interval trefi 0 c t case 85 c 7.8 7.8 7.8 7.8 7.8 s 85 c < t case 95 c 3.9 3.9 3.9 3.9 3.9 s speed ddr2-533(d5) ddr2-400(cc) units bin (cl - trcd - trp) 4 - 4 - 4 3 - 3 - 3 parameter min max min max tck, cl=3 5 8 5 8 ns tck, cl=4 3.75 8 5 8 ns trcd 15 15 ns trp 15 15 ns trc 55 55 ns tras 40 70000 40 70000 ns
page 19 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram timing parameters by speed grade (refer to notes for informations re lated to this table at the bottom) parameter symbol ddr2-533 ddr2-400 units notes min max min max dq output access time from ck/ck tac -500 +500 -600 +600 ps dqs output access time from ck/ck tdqsck -450 +450 -500 +500 ps ck high-level width tch 0.45 0.55 0.45 0.55 tck ck low-level width tcl 0.45 0.55 0.45 0.55 tck ck half period thp min(tcl , tch) x min(tcl , tch) x ps 20,21 clock cycle time, cl=x tck 3750 8000 5000 8000 ps 24 dq and dm input hold time tdh(base) 225 x 275 x ps 15,16, 17,20 dq and dm input setup time tds(base) 100 x 150 x ps 15,16, 17,21 control & address input pulse width for each input tipw 0.6 x0.6 x tck dq and dm input pulse width for each input tdipw 0.35 x0.35 x tck data-out high- impedance time from ck/ck thz x tac max xtac max ps dqs low-impedance time from ck/ck tlz(dqs) tac min tac max tac min tac max ps 27 dq low-impedance time from ck/ck tlz(dq) 2* tac min tac max 2* tac min tac max ps 27 dqs-dq skew for dqs and associated dq signals tdqsq x300x350 ps 22 dq hold skew factor tqhs x400x450 ps 21 dq/dqs output hold time from dqs tqh thp - tqhs x thp - tqhs x ps write command to first dqs latching transition tdqss -0.25 0.25 -0.25 0.25 tck dqs input high pulse width tdqsh 0.35 x 0.35 x tck dqs input low pulse width tdqsl 0.35 x 0.35 x tck dqs falling edge to ck setup time tdss 0.2 x 0.2 x tck dqs falling edge hold time from ck tdsh 0.2 x 0.2 x tck
page 20 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram parameter symbol ddr2-533 ddr2-400 units notes min max min max mode register set command cycle time tmrd 2 x 2 x tck write postamble twpst 0.4 0.6 0.4 0.6 tck 19 write preamble twpre 0.35 x 0.35 x tck address and control input hold time tih(base) 375 x 475 x ps 14,16, 18,23 address and control input setup time tis(base) 250 x 350 x ps 14,16, 18,22 read preamble trpre 0.9 1.1 0.9 1.1 tck 28 read postamble trpst 0.4 0.6 0.4 0.6 tck 28 active to active command period for 1kb page size products trrd 7.5 x 7.5 x ns 12 active to active command period for 2kb page size products trrd 10 x 10 x ns 12 four activate window for 1kb page size products tfaw 37.5 37.5 ns four activate window for 2kb page size products tfaw 50 50 ns cas to cas command delay tccd 2 2 tck write recovery time twr 15 x 15 x ns auto precharge write recovery + precharge time tdal wr+tr p x wr+tr p x tck 23 internal write to read command delay twtr 7.5 x10 x ns 33 internal read to precharge command delay trtp 7.5 7.5 ns 11 exit self refresh to a non-read command txsnr trfc + 10 trfc + 10 ns exit self refresh to a read command txsrd 200 200 tck exit precharge power down to any non-read command txp 2 x 2 x tck exit active power down to read command txard 2 x 2 x tck 9
page 21 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram parameter symbol ddr2-533 ddr2-400 units notes min max min max exit active power down to read command (slow exit, lower power) txards 6 - al 6 - al tck 9, 10 cke minimum pulse width (high and low pulse width) t cke 33 tck 36 odt turn-on delay t aond 222 2tck odt turn-on t aon tac(mi n) tac(m ax)+1 tac(mi n) tac(ma x)+1 ns 13, 25 odt turn-on(power- down mode) t aonpd tac(mi n)+2 2tck+t ac(ma x)+1 tac(mi n)+2 2tck+t ac (max)+ 1 ns odt turn-off delay t aofd 2.5 2.5 2.5 2.5 tck odt turn-off t aof tac(min) tac(ma x)+ 0.6 tac(mi n) tac(max )+ 0.6 ns 26 odt turn-off (power- down mode) t aofpd tac(mi n)+2 2.5tck + tac(m ax)+1 tac(mi n)+2 2.5tck + tac(ma x)+1 ns odt to power down entry latency tanpd 3 3 tck odt power down exit latency taxpd 8 8 tck ocd drive mode output delay toit 0 12 0 12 ns minimum time clocks remains on after cke asynchronously drops low tdelay tis+tck +tih tis+tck +tih ns 24
page 22 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram general notes, which may apply for all ac parameters 1. slew rate measurement levels a. output slew rate for falling and rising edges is measured between vtt - 250 mv and vtt + 250 mv for single ended signals. for differential signals (e.g. dqs - dqs ) output slew rate is measured between dqs - dqs = -500 mv and dqs - dqs = +500mv. output slew rate is guaranteed by design, but is not necessarily tested on each device. b. input slew rate for single ended signals is measured from dc-level to ac-level: from v il (dc) to v ih (ac) for rising edges and from v ih (dc) and v il (ac) for falling edges. for differential signals (e.g. ck - ck ) slew rate for rising edges is measured from ck - ck = -250 mv to ck - ck = +500 mv (250mv to -500 mv for falling edges). c. vid is the magnitude of the difference between the input voltage on ck and the input voltage on ck , or between dqs and dqs for differential strobe. 2. ddr2 sdram ac timing reference load following figure represents the timing reference load us ed in defining the relevant timing parameters of the part. it is not intended to be either a precise represen tation of the typical system environment or a depiction of the actual load presented by a producti on tester. system designers will use ibis or other simulation tools to correlate the timing reference load to a system envir onment. manufacturers will correlate to their production test conditions (generally a coaxial transmission line termi nated at the tester electronics). the output timing reference voltage level for single ended signals is the crosspoint with vtt. the output tim- ing reference voltage level for differential signals is the crosspoint of the true (e.g. dqs) and the complement (e.g. dqs) signal. 3. ddr2 sdram output slew rate test load output slew rate is characterized under the te st conditions as shown in the following figure. vddq dut dq dqs dqs rdqs rdqs output v tt = v ddq /2 25 ? timing reference point vddq dut dq dqs, dqs rdqs, rdqs output v tt = v ddq /2 25 ? test point
page 23 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram 4. differential data strobe ddr2 sdram pin timings are specified for either single ended mode or differential mode depending on the setting of the emrs ?enable dqs? mode bit; timi ng advantages of differential mode are realized in sys- tem design. the method by which t he ddr2 sdram pin timings are measured is mode dependent. in single ended mode, timing relationships are measured relative to the rising or falling edges of dqs crossing at vref. in differential mode, these timing relationships ar e measured relative to the crosspoint of dqs and its complement, dqs . this distinction in timing methods is guarant eed by design and characterization. note that when differential data strobe mode is disabled via the emrs, the complementary pin, dqs , must be tied externally to vss through a 20 ohm to 10 k ohm resisor to insure proper operation. 5. ac timings are for linear signal transitions. 6. these parameters guarant ee device behavior, but they are not necessarily tested on each device. they may be guaranteed by device design or tester correlation. 7. all voltages are referenced to vss. 8. tests for ac timing, idd, and electrical (ac and dc) characteristics, may be conducted at nominal refer- ence/supply voltage levels, but the re lated specifications and device operation are guaranteed for the full volt- age range specified. t ds t ds t dh t wpre t wpst t dqsh t dqsl dqs dqs d dmin dqs/ dq dm t dh dmin dmin dmin d d d dqs v il (ac) v ih (ac) v il (ac) v ih (ac) v il (dc) v ih (dc) v il (dc) v ih (dc) t ch t cl ck ck ck/ck dqs/dqs dq dqs dqs t rpst q t rpre t dqsqmax t qh t qh t dqsqmax q q q
page 24 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram specific notes for dedicated ac parameters 9. user can choose which active pow er down exit timing to use via mrs(bit 12). txard is expected to be used for fast active power down exit timing. txards is expected to be used for slow active power down exit timing. 10. al = additive latency 11. this is a minimum requirement. minimum read to precharge timing is al + bl/2 providing the trtp and tras(min) have been satisfied. 12. a minimum of two clocks (2 * tck) is required irrespective of operating frequency 13. timings are guaranteed with command/address input slew rate of 1.0 v/ns. 14. these parameters guarantee devic e behavior, but they are not necessa rily tested on each device. they may be guaranteed by device design or tester correlation. 15. timings are guaranteed with data, mask, and (dqs/ rdqs in singled ended mode) input slew rate of 1.0 v/ns. 16. timings are guaranteed with ck/ck differential slew rate of 2.0 v/ns. timings are guaranteed for dqs signals with a differential slew rate of 2.0 v/ns in di fferential strobe mode and a slew rate of 1v/ns in single ended mode. 17. tds and tdh derating for ddr2-400 and ddr2-533 for all input signals the total tds (setup time) and tdh (hold time) required is calculated by adding the datasheet tds(base) and tdh(base) val ue to the delta tds and delta tdh derating value respectively. exam- ple: tds (total setup time) = tds(base) + delta tds. ? tds, ? tdh derating values (all units in ?ps?, note 1 applies to entire table) dqs,dqs differential slew rate 4.0 v/ns 3.0 v/ns 2.0 v/ns 1.8 v/ns 1.6 v/ns 1.4v/ns 1.2v/ns 1.0v/ns 0.8v/ns ? td s ? td h ? td s ? td h ? td s ? td h ? td s ? td h ? td s ? td h ? td s ? td h ? td s ? td h ? td s ? td h ? td s ? td h dq slew rate v/ns 2.0 125 45 125 45 125 45 - - - - - - - - - - - - 1.5 83 21 83 21 83 21 95 33 - - - - - - - - - - 1.0 0 0 0 0 0 0 12 12 24 24 - - - - - - - - 0.9 - - -11 -14 -11 -14 1 -2 13 10 25 22 - - - - - - 0.8 - - - - -25 -31 -13 -19 -1 -7 11 5 23 17 - - - - 0.7 - - - - - - -31 -42 -19 -30 -7 -18 5 -6 17 6 - - 0.6 - - - - - - - - -43 -59 -31 -47 -19 -35 -7 -23 5 -11 0.5 - - - - - - - - - - -74 -89 -62 -77 -50 -65 -38 -53 0.4 - - - - - - - - - - - - -127 -140 -115 -128 -103 -116
page 25 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram 18. tis and tih (input setup and hold) derating. tis, tih derating values for ddr2-400, ddr2-533 ck,ck differential slew rate 2.0 v/ns 1.5 v/ns 1.0 v/ns ? tis ? tih ? tis ? tih ? tis ? tih units notes com- mand/ad- dress slew rate (v/ns) 4.0 +187 +94 +217 +124 +247 +154 ps 1 3.5 +179 +89 +209 +119 +239 +149 ps 1 3.0 +167 +83 +197 +113 +227 +143 ps 1 2.5 +150 +75 +180 +105 +210 +135 ps 1 2.0 +125 +45 +155 +75 +185 +105 ps 1 1.5 +83 +21 +113 +51 +143 +81 ps 1 1.0 0 0 +30 +30 +60 60 ps 1 0.9 -11 -14 +19 +16 +49 +46 ps 1 0.8 -25 -31 +5 -1 +35 +29 ps 1 0.7 -43 -54 -13 -24 +17 +6 ps 1 0.6 -67 -83 -37 -53 -7 -23 ps 1 0.5 -110 -125 -80 -95 -50 -65 ps 1 0.4 -175 -188 -145 -158 -115 -128 ps 1 0.3 -285 -292 -255 -262 -225 -232 ps 1 0.25 -350 -375 -320 -345 -290 -315 ps 1 0.2 -525 -500 -495 -470 -465 -440 ps 1 0.15 -800 -708 -770 -678 -740 -648 ps 1 ? tis and ? tih derating values for ddr2-667, ddr2-800 ck,ck differential slew rate 2.0 v/ns 1.5 v/ns 1.0 v/ns ? tis ? tih ? tis ? tih ? tis ? tih units notes com- mand/ad- dress slew rate (v/ns) 4.0 +150 +94 +180 +124 +210 +154 ps 1 3.5 +143 +89 +173 +119 +203 +149 ps 1 3.0 +133 +83 +163 +113 +193 +143 ps 1 2.5 +120 +75 +150 +105 +180 +135 ps 1 2.0 +100 +45 +130 +75 +160 +105 ps 1 1.5 +67 +21 +97 +51 +127 +81 ps 1 1.0 0 0 +30 +30 +60 +60 ps 1 0.9 -5 -14 +25 +16 +55 +46 ps 1 0.8 -13 -31 +17 -1 +47 +29 ps 1 0.7 -22 -54 +8 -24 +38 +6 ps 1 0.6 -34 -83 -4 -53 +26 -23 ps 1 0.5 -60 -125 -30 -95 0 -65 ps 1 0.4 -100 -188 -70 -158 -40 -128 ps 1 0.3 -168 -292 -138 -262 -108 -232 ps 1 0.25 -200 -375 -170 -345 -140 -315 ps 1 0.2 -325 -500 -295 -470 -265 -440 ps 1 0.15 -517 -708 -487 -678 -457 -648 ps 1 0.1 -1000 -1125 -970 -1095 -940 -1065 ps 1
page 26 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram for all input signals the total tis (setup time) and tih (hold time) required is calculated by adding the datasheet tis(base) and tih(base) value to the delta tis and delta tih derating value respectively. example: tis (total setup time) = tis(base) + delta tis 19. the maximum limit for this parameter is not a devic e limit. the device will operate with a greater value for this parameter, but system performance (b us turnaround) will degrade accordingly. 20. min ( tcl, tch) refers to the smaller of the actual clock low time and the actual clock high time as pro- vided to the device (i.e. this value can be greater than the minimum specification limits for tcl and tch). for example, tcl and tch are = 50% of th e period, less the half period jitter ( tjit(hp)) of the clock source, and less the half period jitter due to crosstalk ( tjit(crosstalk)) into the clock traces. 21. tqh = thp ? tqhs, where: thp = minimum half clock period for any given cycle and is defined by clock high or clock low ( tch, tcl). tqhs accounts for: 1) the pulse duration distortion of on-chip clock circuits; and 2) the worst case push-out of dqs on one transiti on followed by the worst case pull-in of dq on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and p- channel to n-channel variat ion of the output drivers. 22. tdqsq: consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output sl ew rate mismatch between dqs / dqs and associated dq in any given cycle. 23. dal = wr + ru{trp(ns)/tck(ns)}, where ru stands for round up. wr refers to the twr parameter stored in the mrs. for trp, if the result of the division is not already an inte- ger, round up to the next highest integer. tc k refers to the application clock period. example: for ddr533 at tck = 3.75ns with twr programmed to 4 clocks. tdal = 4 + (15 ns / 3.75 ns) cloc ks = 4 + (4) clocks = 8 clocks. 24. the clock frequency is allowed to change during self?refresh mode or precharge power-down mode. in case of clock frequency change during precharge power-down, a specific pr ocedure is required as described in ddr2 device operation 25. odt turn on time min is when the device leaves hi gh impedance and odt resistance begins to turn on. odt turn on time max is when the odt resistance is fully on. both are measured from taond. 26. odt turn off time min is when the device starts to turn off odt resistance. odt turn off time max is when the bus is in high impedance. both are measured from taofd. 27. thz and tlz transitions occur in the same access ti me as valid data transitions. these parameters are ref- erenced to a specific voltage level which specifies when t he device output is no longer driving (thz), or begins driving (tlz). following figure shows a method to calculate the point when dev ice is no longer driving (thz), or begins driving (tlz) by measuring the signal at two different voltages. t he actual voltage measurement points are not critical as long as t he calculation is consistent. 28. trpst end point and trpre begin point are not referenced to a spec ific voltage level but specify when the device output is no longer driving (trpst), or begins driving (trpre). following figure shows a method to calculate these points when the device is no longer driv ing (trpst), or begins dr iving (trpre) by measuring the signal at two different voltages. the actual voltage me asurement points are not cr itical as long as the cal-
page 27 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram culation is consistent. these notes are referenced in the ?timing paramete rs by speed grade? tables for ddr2-400/533/667 and ddr2-800. 29. input waveform timing with diff erential data strobe enabled mr[bit10]=0, is referenced from the input sig- nal crossing at the v ih(ac) level to the differential data strobe cross point for a rising signal, and from the input signal crossing at the v il(ac) level to the differential data strobe crosspoint for a falling signal applied to the device under test. 30. input waveform timing with diff erential data strobe enabled mr[bit10]=0, is referenced from the input sig- nal crossing at the v ih(dc) level to the differential data strobe crosspoint for a rising signal and v il(dc) to the differential data strobe crosspoint for a falling signal applied to the device under test. differential input waveform timing thz trpst end point t1 t2 voh + x mv voh + 2x mv vol + 2x mv vol + x mv tlz trpre begin point t2 t1 vtt + 2x mv vtt + x mv vtt - x mv vtt - 2x mv tlz,trpre begin point = 2*t1-t2 thz,trpst end point = 2*t1-t2 tds v ddq v ih(ac) min v ih(dc) min v ref(dc) v il(dc) max v il(ac) max v ss dqs dqs tdh tds tdh
page 28 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram 31. input waveform timing is referenced from the input signal crossing at the v ih(ac) level for a rising signal and v il(ac) for a falling signal applied to the device under test. 32. input waveform timing is referenced from the input signal crossing at the v ih(dc) level for a rising signal and v il(dc) for a falling signal applied to the device under test. 33. twtr is at lease two clocks (2 * tck) independent of operation frequency. 34. input waveform timing with single- ended data strobe enabled mr[bit10] = 1, is referenced from the input signal crossing at the vih(ac) level to the single-ended data strobe crossing vih/l(dc) at the start of its tran- sition for a rising signal, and from the input signal cros sing at the vil(ac) level to the single-ended data strobe crossing vih/l(dc) at the start of its transition for a falling signal applied to the device under test. the dqs signal must be monotonic betw een vil(dc)max and vih(dc)min. 35. input waveform timing with single- ended data strobe enabled mr[bit10] = 1, is referenced from the input signal crossing at the vih(dc) level to the single-ended da ta strobe crossing vih/l(ac ) at the end of its transi- tion for a rising signal, and from the input signal cr ossing at the vil(dc) level to the single-ended data strobe crossing vih/l(ac) at the end of its tr ansition for a falling signal applied to the device under test. the dqs signal must be monotonic betw een vil(dc)max and vih(dc)min. 36. tckemin of 3 clocks means cke must be regist ered on three consecutive positive clock edges. cke must remain at the valid input level the entire time it ta kes to achieve the 3 clocks of registeration. thus, after any cke transition, cke may not transi tioin from its valid level during the time period of tis + 2*tck + tih. tis v ddq v ih(ac) min v ih(dc) min v ref(dc) v il(dc) max v il(ac) max v ss ck ck tih tis tih
page 29 of 29 1gb m-die ddr2 sdram rev.1.1 jan. 2005 ddr2 sdram revision history version 0.1 (feb. 2004) - initial release version 0.2 (may 2004) - corrected the ordering information version 0.3 (jul. 2004) - corrected typo version 1.0 (dec. 2004) - added current values at ddr2-400 version 1.1 (jan. 2005) - revised current test ac spec condition - added derating table

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