dc C 20 ghz hbt series-shunt amplifier technical data HMMC-5200 features ? high bandwidth, f -1db : 21 ghz typical ? moderate gain: 9.5 db 1 db @ 1.5 ghz ?p -1db @ 1.5 ghz: 12 dbm typical ? low l/f noise corner: <20 khz typical ? single supply operation: >4.75 volts @ 44 ma typ. ? low power dissipation: 190 mw typ. for chip description the HMMC-5200 is a dc to 20 ghz, 9.5 db gain, feedback amplifier designed to be used as a cascadable gain block for a variety of applications. the device consists of a modified darlington feedback pair which reduces the sensitivity to process variations and provides 50 ohm input/output port matches. furthermore, this amplifier is fabricated using mwtds heterojunction bipolar transistor (hbt) process which provides excellent process uniformity, reliability and 1/f noise perfor- mance. the device requires a single positive supply voltage and generally operates class-a for good distortion performance. chip size: 410 x 460 m m (16.1 x 18.1 mils) chip size tolerance: 10 m m ( 0.4 mils) chip thickness: 127 15 m m (5.0 0.6 mils) pad dimensions: 70 x 70 m m (2.8 x 2.8 mils), or larger absolute maximum ratings [1] symbol parameters/conditions units min. max. v cc v cc pad voltage volts 8.0 v pad output pad voltage volts 3.5 p in rf input power dbm 13 t j junction temperature c +150 t op operating temperature c -55 +85 t stg storage temperature c -65 +165 t max maximum assembly temp. c +300 note: 1. operation in excess of any one of these ratings may result in permanent damage to this device. for normal operation, all combined bias and thermal conditions should be chosen such that the maximum junction temperature (t j ) is not exceeded. t a = 25 c except for t op , t stg , and t max . gnd in out gnd v cc gnd gnd
2 dc specifications/physical properties [1] , (typicals are for v cc = +5 v, r out = 64 w ) symbol parameters and test conditions units min. typ. max. v cc supply voltage volts 4.75 6.0 i c1 stage-one supply current ma 14.5 17 20 i c2 stage-two supply current ma 28 32 i c1 + i c2 total supply current ma 45 q j-bs thermal resistance [1] c/watt 340 (junction-to-backside at t j = 150 c) [2] notes: 1. backside ambient operating temperature t a = t op = 25 c unless otherwise noted. 2. thermal resistance (in c/watt) at a junction temperature t( c) can be estimated using the equation: q (t) @ q (t j ) [t( c)+273] / [t j ( c)+273] where q (t j =150 c) = q j-bs . rf specifications, t a = 25 c, v cc = +5 v, r out = 64 w , 50 w system symbol parameters and test conditions units min. typ. max. bw operating bandwidth (f -3 db ) ghz 20 bw operating bandwidth (f -1 db ) ghz 21 s 21 small signal gain (@1.5 ghz) db 8.5 10.5 d gain small signal gain flatness (dc C 5 ghz) db 0.2 small signal gain flatness (dc C 20 ghz) db 1 tc temperature coefficient of gain (dc C 13 ghz) db/ c 0.004 temperature coefficient of gain (13 C 20 ghz) db/ c 0.02 (rl in ) min minimum input return loss (dc C 15 ghz) db -15 minimum input return loss (15 C 20 ghz) db -12 (rl out ) min minimum output return loss db -15 isolation reverse isolation db -15 p -1 db output power at 1 db gain compression (@ 1.5 ghz) dbm 12 p sat saturated output power (@ 1.5 ghz) dbm 13 nf noise figure db 6.5
3 applications the HMMC-5200 can be used for a variety of applications requiring moderate amounts of gain and low power dissipation in a 50 w system. biasing and operation the HMMC-5200 can be operated from a single positive supply. this supply must be connected to two points on the chip, namely the v cc pad and the output pad. the supply voltage may be directly connected to the v cc pad as long as the voltage is between +4.75 to +7 volts; however, if the supply is higher than +7 volts, a series resistor ( r cc ) should be used to reduce the voltage to the v cc pad. see the bonding diagra m for the equation used to select r cc . in the case of the output pad, the supply voltage must be connected to the output transmission line through a resistor and an inductor. the required value of the resistor is given by the equation: r out = 35 . 7 v supply -114.3 w , where v supply is in volts. i f r out is greater than 300 w , the inductor may be omitted, however, the amplifiers gain ma y be reduced by ~0.5 db. figure 4 shows a recommended bonding strategy. the chip contains a backsid e via to provide a low inductance ground path; therefore, the ground pads on the ic should not be bonded. the voltage at the in and out pads of the ic will be approxi- matel y 3.2 volts; therefore, dc blocking caps should be used at these ports. assembly techniques solder die attach using a fluxless gold-tin (ausn) solder preform is the recommended assembly method. a conductive epoxy such as ablebond ? 71-1lm1 or ablebond ? 36-2 may also be used for die attaching provided the absolute maximum thermal ratings are not exceeded. the device should be attached to an electrically conductive surface to complete the dc and rf ground paths. ground path inductance should be minimized. the back- side metallization on the device is gold. it is recommended that the rf input and rf output connections be made using 0.7 mi l diameter gold wire. the chip i s designed to operate with 0.1 C 0.3 nh of inductance at the r f input and output. this can b e accomplished by using 10 mil bond wire lengths on the rf input and output. the bias supply wire can be a 0.7 mil diamete r gold wire attached to the v cc bonding pad. thermosonic wedge is the preferred method for wire bondin g to the gold bond pads. mesh wires can be attached using a 2 mil round tacking tool and a tool force of approximately 2 2 grams with an ultrasonic powe r of roughly 55 db for a duration o f 76 8 msec. a guided wedge at an ultrasonic power level of 64 db can be used for the 0.7 mil wire. the recom-mended wire bond stage temperature is 150 2 c. for more detailed information see agilent application note #999 gaas mmic assembly and handling guidelines. gaas mmics are esd sensitive. proper precautions should be used when handling these devices. figure 1. hmmc-52 0 0 simplified schematic diagram. in gnd v cc gnd out gnd gnd
4 scattering parameters [1] , (t a = 25 c, v cc = +6 v, r out = 100 w , l in/out = 0.17 nh) freq. s 11 s 12 s 21 s 22 ghz db mag. ang. db mag. ang. db mag. ang. db mag. ang. 0.0 -30.4 0.030 28.9 -14.1 0.197 0.0 9.5 3.013 179.9 -28.4 0.038 -1.5 1.0 -29.5 0.033 24.9 -14.1 0.195 -2.0 9.5 2.999 171.5 -29.3 0.034 -7.049 2.0 -28.7 0.037 27.3 -14.2 0.194 -4.1 9.5 2.992 163.2 -30.8 0.029 -15.233 3.0 -27.2 0.043 33.5 -14.2 0.195 -6.2 9.5 3.009 155.0 -31.5 0.026 -23.9 4.0 -25.6 0.052 32.4 -14.1 0.195 -8.3 9.6 3.036 146.7 -33.6 0.022 -42.7 5.0 -24.8 0.058 33.3 -14.1 0.195 -10.4 9.7 3.062 138.2 -35.8 0.016 -72.8 6.0 -24.0 0.063 31.1 -14.1 0.196 -12.6 9.8 3.097 129.6 -36.6 0.015 -109.3 7.0 -23.1 0.070 27.1 -14.1 0.197 -14.7 9.9 3.135 120.9 -34.1 0.020 -143.3 8.0 -22.6 0.074 21.9 -14.0 0.197 -16.9 10.0 3.181 112.0 -30.1 0.031 -166.4 9.0 -22.5 0.074 15.7 -14.0 0.198 -19.1 10.1 3.225 102.9 -26.9 0.045 176.1 10.0 -22.3 0.076 8.55 -14.0 0.199 -21.4 10.2 3.266 93.5 -24.4 0.060 164.4 11.0 -22.4 0.076 -0.36 -13.9 0.200 -23.6 10.3 3.298 83.9 -22.5 0.075 154.2 12.0 -22.5 0.075 -13.5 -13.9 0.201 -25.8 10.4 3.322 74.2 -20.9 0.090 147.9 13.0 -22.8 0.072 -27.9 -13.8 0.203 -28.2 10.4 3.338 64.4 -19.5 0.105 141.1 14.0 -23.2 0.069 -47.1 -13.8 0.204 -30.6 10.4 3.332 54.2 -18.3 0.121 134.2 15.0 -22.9 0.071 -69.7 -13.7 0.205 -33.1 10.3 3.306 44.0 -17.5 0.133 128.4 16.0 -22.5 0.075 -93.4 -13.6 0.207 -35.7 10.2 3.253 33.7 -16.7 0.145 122.0 17.0 -20.8 0.091 -115.1 -13.6 0.208 -37.9 10.0 3.181 23.5 -16.0 0.158 118.6 18.0 -19.2 0.109 -134.4 -13.5 0.210 -40.8 9.7 3.085 13.4 -15.5 0.167 112.3 19.0 -17.4 0.134 -149.6 -13.4 0.212 -43.8 9.4 2.975 3.5 -15.3 0.172 109.7 20.0 -15.8 0.161 -161.7 -13.4 0.213 -46.8 9.0 2.844 -6.0 -15.2 0.172 106.0 21.0 -14.4 0.190 -172.3 -13.4 0.213 -49.8 8.6 2.706 -15.4 -14.9 0.179 105.1 22.0 -13.1 0.220 178.7 -13.4 0.213 -52.9 8.1 2.560 -24.4 -14.9 0.178 104.0 23.0 -12.0 0.250 170.7 -13.4 0.212 -55.6 7.6 2.416 -33.0 -14.7 0.183 103.0 24.0 -11.0 0.281 163.3 -13.4 0.212 -58.3 7.1 2.272 -41.3 -14.5 0.187 104.9 25.0 -10.1 0.313 157.0 -13.5 0.211 -61.2 6.5 2.134 -49.2 -14.2 0.193 105.7 26.0 -9.29 0.343 150.8 -13.4 0.212 -63.9 6.0 1.997 -56.9 -13.8 0.203 106.8 note: 1. s-parameter data obtained from on-wafer device measurement plus simulation of input and output wire bond inductance. figure 2. typical s 21 and s 12 response. figure 3. typical s 11 and s 22 response. 12 10 8 6 4 2 0 -5 -10 -15 -20 -25 s 21 (db) s 12 (db) 0.10 13 26 frequency (ghz) t a = 25 c, v cc = +6v, r out = 100 , l in/out = 0.17 nh [1] s 12 s 21 0 -10 -20 -30 -40 -50 0 -10 -20 -30 -40 -50 s 11 (db) s 22 (db) 0.10 13 26 frequency (ghz) t a = 25 c, v cc = +6v, r out = 100 , l in/out = 0.17 nh [1] s 22 s 11
5 figure 4. HMMC-5200 assembly diagram. figure 5. HMMC-5200 bonding pad positions. (all dimensions in microns) rf input c block c block l choke [2] r out 5v v supply r cc rf output [1] [1] if 4.75v v supply 7v, r cc = 0 if v supply > 7v, r cc = [(v supply ?6.5) * (1/0.01725)] r out = [(v supply ?3.2) * (1/0.028)] notes: blocking cap required on input and output. 1. for optimum performance, the input and output bond wire inductances should each be 0.1 0.3 nh. (bond wire has about 20 ph/mil of inductance). 2. l choke is optional if r out is greater than 300 , however, gain will be reduced by about 0.5 db. gnd in out gnd v cc gnd gnd 0 410 240 390 0 90 70 340 175 460 gnd in out gnd v cc gnd gnd this data sheet contains a variety of typical performance data. the information supplied should not be interpreted as a complete list of circuit specifications. in this data sheet the term typical refers to the 50th percentile performance. for additional information contact your local agilent sales representative.
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5968-1783e (11/99)
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