17.7C 32 ghz amplifier technical data features ? 22 dbm output p (-1 db) ? 8 db gain ?50 w input/output matching ? small size ? bias: 4.5 volts, 250 ma description the HMMC-5032 is a mmic power amplifier designed for use in wireless transmitters that operate within the 17.7 ghz to 32 ghz range. it provides 22 dbm of output power and 8 db of small- signal gain from a small easy-to- use device. the HMMC-5032 was designed to be driven by the hmmc-5040 (20 C 40 ghz) or the hmmc-5618 (5.9 C 20 ghz) mmic amplifier for linear transmit applications. this device has input and output matching circuitry for use in 50 ohm environments. absolute maximum ratings [1] symbol parameters/conditions units min. max. v d1, 2 drain supply voltages v 5 v g1, 2 gate supply voltages v -3.0 0.5 det. bias applied detector bias (optional) v 5 i dd total drain current ma 460 p in rf input power dbm 23 t ch channel temperature [2] c +170 t a backside ambient temp. c -55 +95 t stg storage temperature c -65 +170 t max maximum assembly temp. c +300 notes: 1. absolute maximum ratings for continuous operation unless otherwise noted. 2. refer to dc specifications/physical properties table for derating information. chip size: 1.4 x 0.78 mm (55.1 x 30.7 mils) chip size tolerance: 10 m m ( 0.4 mils) chip thickness: 127 15 m m (5.0 0.6 mils) HMMC-5032
2 HMMC-5032 dc specifications/physical properties [1] symbol parameters and test conditions units min. typ. max. v d1 , 2 drain supply operating voltages v 2 4.5 5 i d1 first stage drain supply current ma 100 140 (v dd = 4.5 v, v g1 @ -0.8 v) i d2 second stage drain supply current ma 150 320 (v dd = 4.5 v, v gg @ -0.8 v) v g1 , 2 gate supply operating voltages v -0.8 (i dd @ 250 ma) v p pinch-off voltage v -2 -1.2 (v dd = 4.5 v, i dd 10 ma) det. bias detector bias voltage (optional) v v d1 , 2 5 q ch-bs thermal resistance [2] c/watt 67 (channel-to-backside at t ch = 160 c) t ch channel temperature [3] (t a = 85 c, mttf > 10 6 hrs, c 160 v dd = 4.5 v, i dd = 250 ma) notes: 1. backside ambient operating temperature t a = 25 c unless otherwise noted. 2. thermal resistance ( c/watt) at a channel temperature t ( c) can be estimated using the equation: q (t) @ q ch-bs x [t( c)+ 273] / [160 c + 273]. 3. derate mttf by a factor of two for every 8 c above t ch . HMMC-5032 rf specifications, t a = 25 c, z o = 50 w , v dd = 4.5 v, i dd = 250 ma low band upper band symbol parameters/conditions units specifications specifications min. typ. max. min. typ. max. bw operating bandwidth ghz 17.7 26.5 25 31.5 gain small signal gain db 7 8 6 7 d gain / dt temperature coefficient of gain db/ c 0.02 0.02 p -1db output power dbm 21 22 21 22 at 1 db gain compression p sat saturated output power [1] dbm 24 24 (rl in ) min minimum input return loss db 8 9 10 15 (rl out ) min minimum output return loss db 9 10 15 20 isolation minimum reverse isolation db 35 30 note: 1. devices operating continuously beyond 1 db gain compression may experience power degradation.
3 HMMC-5032 applications the HMMC-5032 mmic is a broadband power amplifier designed for use in transmitters that operate in various frequency bands between 17.7 ghz and 32 ghz. it can be attached to the output of the hmmc-5040 (20C 40 ghz) or the hmmc-5618 (5.9C 20 ghz) mmic amplifier, increasing the power handling capability of transmitters requir- ing linear operation. biasing and operation the recommended dc bias condition is with both drains ( v d1 and v d2 ) connected to single 4.5 volt supply and both gates ( v g1 and v g2 ) connected to an adjustable negative voltage supply. the gate voltage is adjusted for a total drain supply current of typically 250 ma. the rf input and output are ac-coupled. an optional output power detec- tor network is also provided. detector sensitivity can be adjusted by biasing the diodes with typically 1 to 5 volts applied to the det-bias terminal. simply connecting det-bias to the v d2 supply is a convenient method of biasing this detector network. the differential voltage between the det-ref and det-out bonding pads can be correlated to the rf power emerging from the rf output port. no ground wires are needed because ground connections are made with plated through-holes to the backside of the device. assembly techniques electrical and thermal conductive epoxy die attach is the preferred assembly method. solder die attach using a fluxless gold-tin (ausn) solder preform can also be used. the device should be attached to an electrically con- ductive surface to complete the dc and rf ground paths. the backside metallization on the device is gold. figure 1. HMMC-5032 simplified schematic diagram. it is recommended that the electrical connections to the bonding pads be made using 0.7 C 1.0 mil diameter gold wire. the microwave/millimeter-wave connections should be kept as short as possible to minimize inductance. for assemblies requiring long bond wires, multiple wires can be attached to the rf bonding pads. thermosonic wedge is the preferred method for wire bonding to the gold bond pads. a guided-wedge at an ultrasonic power level of 64 db can be used for the 0.7 mil wire. the recom- mended wire bond stage tempera- ture is 150 2 c. for more detailed information see agilent application note #999, gaas mmic assembly and handling guidelines. gaas mmics are esd sensitive. proper precautions should be used when handling these devices. v d2 det. bias v d1 v g2 det. ref. det. out v g1 r1 = 10 k stage 1 stage 2 ref. d2 r1 r1 c rf input rf output d1
4 HMMC-5032 typical performance characteristics figure 2. gain and isolation vs. frequency. 12 10 8 6 4 2 0 0 10 20 30 40 50 60 small-signal gain (db) isolation (db) 10 15 20 30 25 40 35 45 frequency (ghz) v dd = 4.5 v, i dd = 250 ma, det bias = open gain isolation spec range 17.7 ?31.5 ghz figure 3. input and output return loss vs. frequency. 0 6 12 18 24 30 0 6 12 18 24 30 input return loss (db) output return loss (db) 10 15 20 30 25 40 35 45 frequency (ghz) v dd = 4.5 v, i dd = 250 ma, det bias = open output r.l. spec range 17.7 ?31.5 ghz input r.l. figure 4. gain vs. temperature. 12 11 10 9 8 7 6 5 4 small-signal gain (db) -55 -35 -15 25 565 45 85 temperature (t a , c) v dd = 4.5 v, i dd = 250 ma (device mounted in a connectorized package) freq. = 30 ghz 0.02 db/ c figure 5. output power loss vs. total drain current. 30 28 26 24 22 20 18 16 14 12 10 8 30 28 26 24 22 20 18 16 14 12 10 8 p -1 db (dbm) p sat (dbm) 190 220 250 280 310 i dd (ma) v dd = 4.5 v, i dd = 250 ma, freq. = 28 ghz p sat p -1 db figure 6. output power vs. frequency. 29 27 25 23 21 19 17 15 29 27 25 23 21 19 17 15 p -1 db (dbm) p sat (dbm) 17 19 21 23 25 27 29 31 33 frequency (ghz) v dd = 4.5 v, i dd = 250 ma p sat p -1 db figure 7. detector voltages vs. output power for various detector bias voltages. 26 22 18 14 10 6 2 0 130 110 90 70 50 30 10 0 (rf det) ?(dc det) (dbmv) (rf det) ?(dc det) (mv) 11 13 15 19 17 21 23 24 rf output power (dbm) v dd = 4.5 v, i dd = 250 ma, freq. = 28 ghz det bias = open figure 8. gain compression and efficiency vs. power out. 12 10 8 6 4 2 16 14 12 10 8 6 4 2 gain (db) efficiency (%) 15 17 19 21 25 23 26 rf output power (dbm) v dd = 4.5 v, i dd = 250 ma, freq. = 28 ghz effic. (%) gain figure 9. gain and total drain current vs. output power. 12 10 8 6 4 2 400 360 320 280 240 200 gain (db) i dd (ma) 15 16 17 18 19 20 21 22 23 24 rf output power (dbm) v dd = 4.5 v, freq. = 28 ghz i dd gain
5 figure 10. assembly diagram illustrating the HMMC-5032 cascaded with the hmmc-5040 for 20 C 32 ghz applications. rf output rf input v gg v gg hmmc-5040 HMMC-5032 v dd 250 ma 3 100 pf 3 100 pf 3 100 pf 3 800 pf v dd 225 300 ma 3 100 pf 3 800 pf figure 11. assembly diagram illustrating the HMMC-5032 cascaded with the hmmc-5618 for 17.7 C 20 ghz applications. rf output rf input v gg hmmc-5618 HMMC-5032 v dd 250 ma 3 100 pf 3 100 pf v dd 115 ma 3 100 pf
this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpreted as a complete list of circuit specifica- tions. in this data sheet the ter m typica l refers to the 50th percentile performance. for additional information contact your local agilent sales representative. figure 12. HMMC-5032 bonding pad locations. (dimensions are in micrometers) 710 525 100 rf input rf output det. bias 790 335 80 v g1 v g2 v d2 v d1 det. ref det. out 210 400 1060 1205 1390 85 355 810 1305 www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 596 6 -4572e (11/99)
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