we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications.all operating parameters must be validated for each customer application by the c ustomer. smd-led 16.11.2007 rev. 04 radiation infrared absolute maximum ratings at t amb = 25c, unless otherwise specified symbol value unit i f 50 ma i fm 100 ma p 100 mw t amb -40 to +85 c t stg -55 to +100 c electrical and optical characteristics at t amb = 25c, unless otherwise specified parameter test conditions symbol min typ max unit forward voltage i f = 20 ma v f 1,6 1,9 v reverse voltage i f = 100 a v r 5v radiant power i f = 100 ma e 4.6 6.0 mw radiant intensity i f = 100 ma e 1.25 1.6 mw/sr peak wavelength i f = 100 ma p 860 875 890 nm spectral bandwidth at 50% i f = 100 ma ? 0.5 30 nm viewing angle i f = 100 ma ? 120 deg. switching time i f = 100 ma t r , t f 20 ns note: all measurements carried out with epigap equipment high-power, high speed led in standard smd package, compact design allows for easy circuit board mounting or assembling of arrays optical communications, remote control and light barriers, measurement applications and security systems, automation description ELS-880-894 algaas/algaas smd 0805 case peak forward current smd type technology t p 10 s, t p /t 0.1 parameter test onditions applications dc forward current storage temperature range power dissipation operating temperature range 0,4 1,25 2,0 1,0 0,9 0,4 1,2 cathode mark die all dimensions in mm tolerances: 0,1mm epigap optoelektronik gmbh, d-12555 berlin, k?penicker str.325 b, haus 201 tel.: +49-30-6576 2543, fax : +49-30-6576 2545 1 of 1
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