09/06/02 rad-hard irhslna57z60 synchronous rectifier surface mount (smd-2) www.irf.com 1 30v, n-channel features: co-pack n-channel rad-hard mosfet and schottky diode ideal for synchronous rectifiers in dc-dc converters up to 75a output low conduction losses low switching losses low vf schottky rectifier refer to irhsna57z60 for lower rds(on) for footnotes refer to the last page * current is limited by package smd-2 description: the synchfet family of co-pack rad-hard mosfets and schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. rad-hard mosfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifier?s low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of military and space applications. product summary part number radiation level r ds(on) q g irhslna57z60 100k rads (si) 4.0m ? 200nc irhslna53z60 300k rads (si) 4.0m ? 200nc irhslna54z60 600k rads (si) 4.0m ? 200nc IRHSLNA58Z60 1000k rads (si) 4.5m ? 200nc absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain or source current 75* i d @ v gs = 12v, t c = 100c continuous drain or source current 75* i dm pulsed drain current ? 300 p d @ t c = 25c max. power dissipation 250 w linear derating factor 2.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? 75 a e ar repetitive avalanche energy ? 25 mj i f (av)@ t c = 25c schottky and body diode avg. forward current ? 75* i f (av)@ t c =100c schottky and body diode avg. forward current ? 75* t j, t stg opeating and storage temperature range -55 to 150 pckg. mounting surface temp. 300 (for 5s) weight 3.3 (typical) g pre-irradiation a a c pd-94400a
irhslna57z60 2 www.irf.com pre-irradiation electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 30 ? ? v v gs = 0v, i d = 1.0ma r ds(on) static drain-to-source on-state ? ? 3.5 m ? v gs = 12v, i d = 45a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs, i d = 1.0ma g fs forward transconductance 45 ? ? s ( ) v ds > 15v, i ds = 45a i dss zero gate voltage drain current ? ? 50 v ds = 24v, v gs =0v ? ? 50 ma v ds = 24v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 200 v gs =12v, i d = 45a, q gs gate-to-source charge ? ? 55 nc v ds = 15v q gd gate-to-drain (?miller?) charge ? ? 40 t d (on) turn-on delay time ? ? 35 v dd = 15v, i d = 45a, t r rise time ? ? 160 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 78 t f fall time ? ? 26 l s + l d total inductance ? 7.03 ? measured from center of drain pad to center of source pad na ? nh ns a schottky diode & body diode ratings and characteristics parameter min typ max units test conditions v sd diode forward voltage ? ? 1.15 t j = -55c, i d =45a, v gs = 0v ? ? 1.05 t j = 25c, i d = 45a, v gs = 0v ? ? 0.95 t j = 110c, i d =45a, v gs = 0v t rr reverse recovery time ? ? 175 ns t j = 25c, i f =45a, di/dt 100a/ s q rr reverse recovery charge ? ? 500 nc v ds 30v l s + l d total inductance ? 7.95 ? nh measured from center of drain pad to center of source pad (for schottky only) t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d v thermal resistance parameter min typ max units test conditions r thjc junction-to-case (mosfet) ? ? 0.5 r thjc junction-to-case (schottky) ? ? 0.7 c/w note: corresponding spice and saber models are available on the website. for footnotes refer to the last page
irhslna57z60 www.irf.com 3 radiation characteristics international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test condi- tions in order to provide a direct comparison. fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page 0 5 10 15 20 25 30 35 0 -5 -10 -15 -20 vgs vds br i au table 2. single event effect safe operating area ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 37.9 255 33.4 30 30 30 25 20 i 59.4 290 28.8 25 25 20 15 10 au 80.3 313 26.5 22.5 22.5 15 10 ? 1. part numbers irhslna57z60, irhslna53z60 and irhslna54z60 2. part number IRHSLNA58Z60 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 30 ? 30 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 25 a v ds = 24v, v gs =0v r ds(on) static drain-to-source ? ? 4.0 ? 5.0 m ? v gs = 12v, i d =45a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 4.0 ? 4.5 m ? v gs = 12v, i d =45a on-state resistance (smd-2) v sd diode forw ard voltage ? ? 1.3 ? 1.3 v v gs = 0v, i s = 45a
irhslna57z60 4 www.irf.com pre-irradiation fig 1. typical output characteristics fig 2. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 4.0 5.0 6.0 7.0 8.0 v = 15v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 75a 1 10 100 1000 10000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v
irhslna57z60 www.irf.com 5 fig 5. typical gate charge vs. gate-to-source voltage d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 5b. gate charge test circuit q g q gs q gd v g charge 12 v fig 5a. basic gate charge waveform 0 50 100 150 200 250 300 0 4 8 12 16 20 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs i = d 45a v = 15v ds v = 24v ds pre-irradiation
irhslna57z60 6 www.irf.com pre-irradiation fig 7a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 7b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 8. maximum effective transient thermal impedance, junction-to-case, mosfet fig 6. maximum drain current vs. case temperature 25 50 75 100 125 150 0 50 100 150 200 t , case temperature ( c) i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v gs
irhslna57z60 www.irf.com 7 fig 9. maximum avalanche energy vs. drain current fig 9b. unclamped inductive waveforms fig 9a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v . pre-irradiation v gs 25 50 75 100 125 150 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 33.5a 47.4a 75a
irhslna57z60 8 www.irf.com pre-irradiation mosfet body diode & schottky diode characteristics fig. 10 - typical forward voltage drop characterstics fig 11. maximum effective transient thermal impedance, junction-to-case, schottky 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 0.0 0.2 0.4 0.6 0.8 1.0 forward voltage drop - v sd (v) 1 10 100 instantaneous forward current - i s (a) tj = -55c tj = 110c tj = 25c
irhslna57z60 www.irf.com 9 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 08/02 case outline and dimensions ? smd-2 ? repetitive rating; pulse width limited by maximum junction temperature ? pulse width 300 s; duty cycle 2% ? 50% duty cycle, rectangular footnotes: ? v dd = 25v, starting t j = 25c, l= 0.3 mh peak i l = 75a, v gs = 12v ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 24 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. specified radiation characteristics are for radiation hardened mosfet die only. pre-irradiation
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