for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 1 amplifiers - l ine a r & p ower - sm t HMC797LP5E gaas phemt mmic 1 watt power amplifier, dc - 22 ghz v02.0811 general description features functional diagram the h m c797 lp 5 e is a gaas mmi c ph em t distrib - uted p ower amplifer which operates between dc and 22 ghz. the amplifer provides 13.5 db of gain, 39 dbm output ip 3 and +28 dbm of output power at 1 db gain compression while requiring 400 ma from a +10 v supply. this versatile p a exhibits a positive gain slope from 4 to 20 ghz making it ideal for ew , e c m , r adar and test equipment applications. the h m c797 lp 5 e amplifer i / o s are internally matched to 50 o hms facilitating integration into mutli-chip- modules ( m c m s), is packaged in a leadless q fn 5x5 mm surface mount package, and requires no external matching components. high p 1db o utput p ower: 28 dbm high p sat o utput p ower: 29.5 dbm high gain: 13.5 db high o utput ip 3: 39 dbm s upply voltage: +10 v @ 400 ma 50 o hm m atched i nput/ o utput 32 l ead 5x5 mm sm t p ackage: 25 mm2 typical applications the h m c797 lp 5 e is ideal for: ? test instrumentation ? microwave radio & vsat ? military & space ? telecom infrastructure ? fiber optics electrical specifcations, t a = +25 c, vdd = +10 v, vgg2 = +3.5 v, idd = 400 ma* p arameter m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. units f requency r ange dc - 12 12 - 18 18 - 22 ghz gain 11 12.5 11 13.5 11 13.5 db gain f latness 0.7 0.5 0.5 db gain variation o ver temperature 0.012 0.008 0.008 db/ c i nput r eturn l oss 13 15 15 db o utput r eturn l oss 12 16 13 db o utput p ower for 1 db compression ( p 1db) 26 28 25 27 23.5 25.5 dbm s aturated o utput p ower ( p sat) 29.5 29 27 dbm o utput third o rder i ntercept ( ip 3) 39 37 35 dbm n oise f igure 3.5 4 6 db s upply current ( i dd) (vdd= 10v, vgg1= -0.8v typ.) 400 440 400 440 400 440 ma * adjust vgg1 between -2 to 0 v to achieve idd = 400 ma typical.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 2 output return loss vs. temperature gain & return loss gain vs. temperature low frequency gain & return loss input return loss vs. temperature noise figure vs. temperature HMC797LP5E v02.0811 gaas phemt mmic 1 watt power amplifier, dc - 22 ghz -30 -20 -10 0 10 20 0 5 10 15 20 25 30 s21 s11 s22 response (db) frequency (ghz) -40 -30 -20 -10 0 0 4 8 12 16 20 24 +25c +85c -40c return loss (db) frequency (ghz) -45 -35 -25 -15 -5 5 15 25 0.00001 0.0001 0.001 0.01 0.1 1 10 s21 s11 s22 response (db) frequency (ghz) 0 2 4 6 8 10 0 4 8 12 16 20 24 +25c +85c -40c noise figure(db) frequency (ghz) -40 -30 -20 -10 0 0 4 8 12 16 20 24 +25c +85c -40c return loss (db) frequency (ghz) 6 8 10 12 14 16 18 0 4 8 12 16 20 24 +25c +85c -40c gain (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 3 amplifiers - l ine a r & p ower - sm t psat vs. supply current psat vs. temperature psat vs. supply voltage p1db vs. supply current HMC797LP5E v02.0811 gaas phemt mmic 1 watt power amplifier, dc - 22 ghz 20 22 24 26 28 30 32 0 4 8 12 16 20 24 +25c +85c -40c psat (dbm) frequency (ghz) 20 22 24 26 28 30 32 0 4 8 12 16 20 24 +8v +10v +11v psat (dbm) frequency (ghz) 20 22 24 26 28 30 32 0 4 8 12 16 20 24 300 ma 350 ma 400 ma psat (dbm) frequency (ghz) 20 22 24 26 28 30 32 0 4 8 12 16 20 24 300 ma 350 ma 400 ma p1db (dbm) frequency (ghz) p1db vs. temperature p1db vs. supply voltage 20 22 24 26 28 30 32 0 4 8 12 16 20 24 +25c +85c -40c p1db (dbm) frequency (ghz) 20 22 24 26 28 30 32 0 4 8 12 16 20 24 +8v +10v +11v p1db (dbm) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 4 output im3 @ vdd = +11v output ip3 vs. supply voltage @ pout = 18 dbm / tone output im3 @ vdd = +8v output im3 @ vdd = +10v output ip3 vs. temperature @ pout = 18 dbm / tone output ip3 vs. supply currents @ pout = 18 dbm / tone 20 25 30 35 40 45 0 4 8 12 16 20 24 300 ma 350 ma 400 ma ip3 (dbm) frequency (ghz) 0 10 20 30 40 50 60 70 10 12 14 16 18 20 22 24 2 ghz 10 ghz 18 ghz 22 ghz im3 (dbc) pout/tone (dbm) 0 10 20 30 40 50 60 70 10 12 14 16 18 20 22 24 2 ghz 10 ghz 18 ghz 22 ghz im3 (dbc) pout/tone (dbm) 20 25 30 35 40 45 0 4 8 12 16 20 24 +8v +10v +11v ip3 (dbm) frequency (ghz) 0 10 20 30 40 50 60 70 10 12 14 16 18 20 22 24 2 ghz 10 ghz 18 ghz 22 ghz im3 (dbc) pout/tone (dbm) 20 25 30 35 40 45 0 4 8 12 16 20 24 +25c +85c -40c ip3 (dbm) frequency (ghz) HMC797LP5E v02.0811 gaas phemt mmic 1 watt power amplifier, dc - 22 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 5 amplifiers - l ine a r & p ower - sm t HMC797LP5E v02.0811 gaas phemt mmic 1 watt power amplifier, dc - 22 ghz gain & power vs. supply current @ 10 ghz gain & power vs. supply voltage @ 10 ghz 10 15 20 25 30 35 300 320 340 360 380 400 gain p1db psat idd (ma) gain (db), p1db (dbm), psat (dbm) 10 15 20 25 30 35 8 9 10 11 gain p1db psat vdd (v) gain (db), p1db (dbm), psat (dbm) 0 1 2 3 4 5 6 0 4 8 12 16 20 max pdis @ 85c 2 ghz 10 ghz 20 ghz power dissipation (w) input power (dbm) power dissipation power compression @ 10 ghz reverse isolation vs. temperature 0 4 8 12 16 20 24 28 32 0 3 6 9 12 15 18 21 24 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -70 -60 -50 -40 -30 -20 -10 0 0 4 8 12 16 20 24 +25c +85c -40c isolation (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 6 HMC797LP5E v02.0811 gaas phemt mmic 1 watt power amplifier, dc - 22 ghz second harmonics vs. temperature @ pout = 18 dbm, vdd = 10v & vgg = 3.5v second harmonics vs. vdd @ pout = 18 dbm, idd = 400 ma [1] second harmonics vs. idd @ pout = 18 dbm, vgg2 = 3.5v second harmonics vs. pout vdd = 10v & vgg = 3.5v & idd = 400 ma 0 10 20 30 40 50 60 70 0 4 8 12 16 20 24 +25c +85c -40c second harmonic (dbc) frequency(ghz) 0 10 20 30 40 50 60 70 0 4 8 12 16 20 24 +8v +10v +11v second harmonic (dbc) frequency(ghz) 0 10 20 30 40 50 60 70 0 4 8 12 16 20 24 300 ma 350 ma 400 ma second harmonic (dbc) frequency(ghz) 0 10 20 30 40 50 60 70 0 4 8 12 16 20 24 +10 dbm +12 dbm +14 dbm +16 dbm +18 dbm +20 dbm second harmonic (dbc) frequency(ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 7 amplifiers - l ine a r & p ower - sm t HMC797LP5E v02.0811 gaas phemt mmic 1 watt power amplifier, dc - 22 ghz outline drawing p art n umber p ackage body m aterial l ead f inish msl r ating p ackage m arking [1] h m c797 lp 5 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] h797 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 260 c package information absolute maximum ratings n ominal drain s upply to g n d +12.0 v gate bias voltage (vgg1) -3.0 to 0 vdc gate bias current ( i gg1) < +10 ma gate bias voltage (vgg2) +2.0 v to (vdd - 6.5 v) gate bias current ( i gg2) < +10 ma continuous p diss (t= 85 c) (derate 69 m w /c above 85 c) 4.5 w rf i nput p ower +27 dbm o utput p ower into v swr >7:1 +29 dbm s torage temperature -65 to 150 c m ax p eak r efow temperature 260 c es d s ensitivity (hb m ) class 1a ele ct ros tat i c sensi t i v e d e v i c e o b ser v e ha n d lin g pre caut ions vdd (v) i dd (ma) +9 400 +10 400 +11 400 typical supply current vs. vdd junction temperature to m ain - tain 1 m illion hour m tt f 150 c n ominal junction temperature (t=85 c, vdd = 10 v) 144 c thermal r esistance (channel to ground paddle) 14.6 c/ w o perating temperature -40 to +85 c reliability information no t es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d imensions a re in in ch es [ millime t ers ] 3. le ad sp ac in g t oler a n c e is non -cu m u l at i v e . 4. p ad bu rr len gth s ha ll b e 0.15mm m ax im u m . p ad bu rr h ei ght s ha ll b e 0.05mm m ax im u m . 5. p ackag e w a rp s ha ll not e xc ee d 0.05mm. 6. a ll g ro u n d le ad s a n d g ro u n d p add le m u s t b e sol d ere d to p cb rf g ro u n d. 7. refer to h i tt i t e a ppli cat ion not e for s ugg es t e d l a n d p att ern .
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 8 p in n umber f unction description i nterface s chematic 1, 4, 6, 8, 9, 17, 20, 22, 24, 25, 32 p ackage bottom g n d these pins & exposed ground paddle must be connected to rf /dc ground. 2 vgg2 gate control 2 for amplifer. attach bypass capacitor per application circuit herein. f or nominal operation +3.5v should be applied to vgg2. 3, 7, 10 - 12, 14, 18, 19, 23, 26 - 28, 31 n /c n o connection required. these pins may be connected to rf /dc ground without affecting performance. 5 rfin this pad is dc coupled and matched to 50 o hms. blocking capacitor is required. 13 vgg1 gate control 1 for amplifer. attach bypass capacitor per application circuit herein. p lease follow mmi c amplifer biasing p rocedure application note. 15 acg4 l ow frequency termination. attach bypass capacitor per application circuit herein. 16 acg3 21 rfo ut & vdd rf output for amplifer. connect dc bias (vdd) network to provide drain current ( i dd). s ee application circuit herein. 29 acg2 l ow frequency termination. attach bypass capacitor per application circuit herein. 30 acg1 pin descriptions HMC797LP5E v02.0811 gaas phemt mmic 1 watt power amplifier, dc - 22 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 9 amplifiers - l ine a r & p ower - sm t HMC797LP5E v02.0811 gaas phemt mmic 1 watt power amplifier, dc - 22 ghz evaluation pcb list of materials for evaluation pcb 130784 [1] i tem description j1, j2 sm a connectors j3, j4 dc p ins c1 - c4 100 p f capacitor, 0402 p kg. c5, c8 10 kp f capacitor, 0402 p kg. c9 - c11 4.7 f capacitor, tantalum r 1, r 2 0 o h m r esistor, 0402 p kg u1 h m c797 lp 5 e p ower amplifer p cb [2] 127135 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon fr 4 the circuit board used in the application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be con - nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 10 application circuit HMC797LP5E v02.0811 gaas phemt mmic 1 watt power amplifier, dc - 22 ghz note 1: drain bias (vdd) must be applied through a broadband bias tee or external bias network.
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