SMG2390N n-channel enhancement mode mos.fet 1.1 a, 150 v, r ds(on) 0.700 ? elektronische bauelemente 20-aug-2010 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mosf ets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmc ia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sc-59 saves board space. ? fast switching speed. ? high performance trench technology. product summary product summary v ds (v) r ds (on) ( ? ? i d (a) 150 0.700@v gs = 10v 1.1 1.200@v gs = 5.5v 0.8 absolute maximum ratings(t a =25 c unless otherwise noted) parameter symbol ratings unit maximum drain-source voltage v ds 150 v gate-source voltage v gs 20 v continuous drain current a i d 1.1 a pulsed drain current b i dm 10 a continuous source current (diode conduction) a i s 1.1 a power dissipation a p d 1.30 w operating junction and st orage temperature range tj, tstg -55 ~ 150 c thermal resistance ratings parameter symbol typ max unit maximum junction to ambient a t Q 10 sec r ? ja 93 110 c / w steady state 130 150 notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature. top view a l c b d g h j f k e 1 2 3 1 2 3 sc-59 ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50
SMG2390N n-channel enhancement mode mos.fet 1.1 a, 150 v, r ds(on) 0.700 ? elektronische bauelemente 20-aug-2010 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions gate-threshold voltage v gs(th) 1.0 - - v v ds =v gs , i d = 250ua gate-body leakage i gss - - 100 ua v ds = 0v, v gs = 8v zero gate voltage drain current i dss - - 1 ua v ds = 120v, v gs = 0v - - 10 v ds = 120v, v gs = 0v, t j = 55 c on-state drain current a i d(on) 10 - - a v ds = 5v, v gs = 10v drain-source on-resistance a r ds(on) - - 0.700 ? v gs = 10v, i d = 1.1a - - 1.200 v gs = 5.5v, i d = 0.8a forward transconductance a g fs - 11.3 - s v ds = 10v, i d = 1.1a diode forward voltage a v sd - 0.75 - v i s = 1.6a, v gs = 0v dynamic b total gate charge q g - 7.0 - nc v ds = 10v, v gs = 5.5v, i d = 1.1a gate-source charge q gs - 1.1 - gate-drain charge q gd - 2.0 - turn-on delay time t d(on) - 8 - ns v dd = 10v, v gen = 4.5v, r l = 15 ? , i d = 1a rise time t r - 24 - turn-off delay time t d(off) - 35 - fall time t f - 10 - notes a. pulse test pw Q 300 us duty cycle Q 2%. b. guaranteed by design, not su bject to production testing.
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