for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 HMC668LP3 / 668lp3e gaas phemt mmic lna w/ failsafe bypass mode, 700 - 1200 mhz v03.0610 general description features functional diagram the h m c668 lp 3( e ) is a versatile, high dynamic range gaas mmi c l ow noise amplifer that integrates a low loss l na bypass mode on the i c. the amplifer is ide - al for receivers and l na modules operating between 0.7 and 1.2 ghz and provides 0.9 db noise fgure, 16 db of gain and +33 dbm ip 3 from a single supply of +5v @ 57ma. i nput and output return losses are excellent and no external matching components are required. a single control line is used to switch be - tween l na mode and a low loss bypass mode. the failsafe topology enables the l na bypass path, when no dc power is available. the h m c668 lp 3( e ) offers improved noise fgure versus the previously released h m c373 lp 3( e ). noise f igure: 0.9 db o utput ip 3: +33 dbm gain: 16 db f ailsafe o peration: bypass is enabled when l na is unpowered s ingle s upply: +3v or +5v 16 l ead 3x3mm q fn p ackage: 9 mm 2 typical applications the h m c668 lp 3( e ) is ideal for: ? cellular/3g and l t e / w i m ax/4g ? bt s & i nfrastructure ? r epeaters and f emtocells ? tower m ounted amplifers ? test & m easurement e quipment electrical specifcations, t a = +25 c, rbias = 0 ohm p arameter l na m ode bypass m ode f ailsafe m ode units vdd = +3v vdd = +5v m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. f requency r ange 0.7 - 1.2 0.7 - 1.2 0.7 - 1.2 0.7 - 1.2 ghz gain 12 15 13 16 -2.5 -1.5 -2.5 -1.5 db gain variation o ver temperature 0.03 0.016 0.0008 0.0008 db / c noise f igure 0.85 1.1 0.9 1.1 db i nput r eturn l oss 12 13 12 12 db o utput r eturn l oss 13 14 13 13 db r everse i solation 22 23 - - db p ower for 1db compression ( p 1db) [1] 13 13 22 24 dbm third o rder i ntercept ( ip 3) [2] 27 33 26 26 dbm s upply current ( i dd) 32 40 57 70 0.05 - ma s witching s peed (90% -10%) l na m ode to bypass m ode bypass m ode to l na m ode 200 - ns ns 85 85 [1] p 1db for l na m ode is referenced to rfo ut while p 1db for bypass and f ailsafe m odes are referenced to rfi n. [2] ip 3 for l na m ode is referenced to rfo ut while ip 3 for bypass and f ailsafe m odes are referenced to rfi n.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 lna - gain vs. temperature [1] lna - broadband gain & return loss lna - gain vs. temperature [2] HMC668LP3 / 668lp3e v03.0610 gaas phemt mmic lna w/ failsafe bypass mode, 700 - 1200 mhz [1] vdd = 5v [2] vdd = 3v [3] m easurement reference plane shown on evaluation p cb drawing. 10 12 14 16 18 20 22 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c frequency (ghz) gain (db) -25 -20 -15 -10 -5 0 5 10 15 20 25 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 vdd=5v vdd=3v frequency (ghz) response (db) s11 s21 s22 0.2 0.5 0.8 1.1 1.4 1.7 2 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 vdd=5v vdd=3v frequency (ghz) noise figure (db) +85c +25c -40c 10 12 14 16 18 20 22 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c frequency (ghz) gain (db) lna - return loss vs. temperature [1] lna - noise figure vs. temperature [3] lna - output ip3 vs. temperature, output power @ 0 dbm 18 23 28 33 38 43 48 12 17 22 27 32 37 42 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c ip3 (dbm) ip3 (dbm) frequency (ghz) vdd=5v vdd=3v -25 -20 -15 -10 -5 0 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c frequency (ghz) return loss (db) input return loss output return loss
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 HMC668LP3 / 668lp3e v03.0610 gaas phemt mmic lna w/ failsafe bypass mode, 700 - 1200 mhz lna - reverse isolation vs. temperature [1] lna - output p1db vs. temperature [2] lna - output p1db, gain & noise figure [3] vs. vdd @ 900 mhz lna - output p1db vs. temperature [1] [1] vdd = 5v [2] vdd = 3v [3] m easurement reference plane shown on evaluation p cb drawing. 4 6 8 10 12 14 16 18 20 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c frequency (ghz) p1db (dbm) 4 6 8 10 12 14 16 18 20 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c frequency (ghz) p1db (dbm) 10 12 14 16 18 20 0.6 0.7 0.8 0.9 1 1.1 3 3.5 4 4.5 5 p1db gain nf gain (db) & p1db (dbm) noise figure (db) voltage supply (v) -40 -35 -30 -25 -20 -15 -10 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c frequency (ghz) isolation (db) lna - gain, p1db, output ip3 vs. current [2] @ 900 mhz lna - gain, p1db, output ip3 vs. current [1] @ 900 mhz 8 10 12 14 16 18 26 30 34 38 42 46 35 40 45 50 55 60 gain (db) , p1db (dbm) ip3 (dbm) idd (ma) ip3 gain p1db 6 8 10 12 14 16 20 24 28 32 36 40 15 20 25 30 35 gain (db) , p1db (dbm) ip3 (dbm) idd (ma) ip3 gain p1db
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 HMC668LP3 / 668lp3e v03.0610 gaas phemt mmic lna w/ failsafe bypass mode, 700 - 1200 mhz bypass mode - input ip3 vs. output power @ 900 mhz bypass mode - broadband gain & return loss bypass mode - insertion loss vs. temperature bypass mode - input ip3 vs. temperature, output power @ 5 dbm 16 20 24 28 32 36 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c frequency (ghz) ip3 (dbm) -5 -4 -3 -2 -1 0 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c frequency (ghz) gain (db) 15 20 25 30 35 40 -10 -5 0 5 10 15 +25c +85c -40c pout (dbm) ip3 (dbm) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 s21 s11 s22 frequency (ghz) response (db) bypass mode - output return loss vs. temperature bypass mode - input return loss vs. temperature -25 -20 -15 -10 -5 0 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c frequency (ghz) return loss (db) -20 -15 -10 -5 0 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c frequency (ghz) return loss (db)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 HMC668LP3 / 668lp3e v03.0610 gaas phemt mmic lna w/ failsafe bypass mode, 700 - 1200 mhz failsafe mode - input ip3 vs. output power @ 900 mhz failsafe mode - broadband gain & return loss failsafe mode - insertion loss vs. temperature failsafe mode - output return loss vs. temperature failsafe mode - input return loss vs. temperature failsafe mode - input ip3 vs. temperature, output power @ 5 dbm 16 20 24 28 32 36 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c frequency (ghz) ip3 (dbm) -5 -4 -3 -2 -1 0 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c frequency (ghz) gain (db) -25 -20 -15 -10 -5 0 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c frequency (ghz) return loss (db) -20 -15 -10 -5 0 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c -40c frequency (ghz) return loss (db) 15 20 25 30 35 40 -10 -5 0 5 10 15 +25c +85c -40c pout (dbm) ip3 (dbm) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 s21 s11 s22 frequency (ghz) response (db)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 absolute maximum ratings truth table ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s drain bias voltage (vdd) +6 vdc control voltage (vctl) +6 vdc rf i nput p ower ( rfi n) l na m ode bypass / f ailsafe m ode +5 dbm +20 dbm channel temperature 150 c continuous p diss (t = 85 c) (derate 10.71 m w /c above 85 c) 0.70 w thermal r esistance (channel to ground paddle) 93.33 c/ w s torage temperature -65 to +150 c o perating temperature -40 to +85 c es d s ensitivity (hb m ) class 1a HMC668LP3 / 668lp3e v03.0610 gaas phemt mmic lna w/ failsafe bypass mode, 700 - 1200 mhz typical supply current vs. vdd l na m ode vctl = vdd = 3 to 5v bypass m ode vctl= 0v, vdd = 3 to 5v f ailsafe m ode vctl = vdd = n/c r bias ? i dd (ma) vdd= 3v vdd= 5v 0 32 57 15 26 49 47 20 37 180 [1] 10 20 [1] r ecommended maximum r bias
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 7 HMC668LP3 / 668lp3e v03.0610 gaas phemt mmic lna w/ failsafe bypass mode, 700 - 1200 mhz outline drawing n ot es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d ime n sio n s a re i n i nch es [ millime t ers ] 3. le ad sp ac i ng t oler anc e is n o n-cu m u l at i v e 4. p ad bu rr le ngth s ha ll b e 0.15mm m ax im u m . p ad bu rr h ei ght s ha ll b e 0.05mm m ax im u m . 5. p ackag e w a rp s ha ll n ot e xc ee d 0.05mm. 6. a ll g ro und le ad s and g ro und p add le m u s t b e sol d ere d to p cb rf g ro und. 7. refer to h i tt i t e a ppli cat io n n ot e for s ugg es t e d l and p att er n. p art number p ackage body m aterial l ead f inish msl r ating p ackage m arking [3] h m c668 lp 3 l ow s tress i njection m olded p lastic s n/ p b s older msl 1 [1] 668 xxxx h m c668 lp 3 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] 668 xxxx [1] m ax peak refow temperature of 235 c [2] m ax peak refow temperature of 260 c [3] 4-digit lot number xxxx package information
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 8 pin descriptions p in number f unction description i nterface s chematic 1, 2, 4, 5, 8, 9, 11, 12, 13, 15 n/c no connection required. these pins may be connected to rf gnd. p erformance will not be affected. 3 rfi n this pin is dc coupled. o ff-chip dc blocking capacitor required. 6 acg ac ground. attach bypass capacitor per application circuit. 7 res e xternal resistor pin for current control. s ee table for external resistor value vs. bias current data. 10 rfo ut this pin is matched to 50 o hms 14 vdd p ower s upply voltage pin. e xternal bypass capacitors required. 16 vctl control voltage pin for l na / bypass m odes. s etting voltage equal to vdd enables l na m ode. e xternal bypass capacitor required. HMC668LP3 / 668lp3e v03.0610 gaas phemt mmic lna w/ failsafe bypass mode, 700 - 1200 mhz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 9 HMC668LP3 / 668lp3e v03.0610 gaas phemt mmic lna w/ failsafe bypass mode, 700 - 1200 mhz application circuit
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 10 evaluation pcb the circuit board used in the application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from hittite upon request. i tem description j1 - j2 p cb m ount sm a connector j3 - j4 dc p in c1 100 p f capacitor, 0402 p kg. c2 8200 p f capacitor, 0402 p kg. c3 10 n f capacitor, 0603 p kg. c4 1 f capacitor, 0603 p kg. c5 100 p f capacitor, 0603 p kg. l 2 15 nh i nductor, 0402 p kg. r 1 0 o hm r esistor, 0402 p kg. u1 h m c668 lp 3( e ) amplifer p cb [2] 118911 e valuation board [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 list of materials for evaluation pcb 121922 [1] HMC668LP3 / 668lp3e v03.0610 gaas phemt mmic lna w/ failsafe bypass mode, 700 - 1200 mhz
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