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  ?006 fairchild semiconductor corporation 1 www.fairchildsemi.com FOD814 series, fod617 series, fod817 series rev. 1.0.5 FOD814 series, fod617 series, fod817 series 4-pin high operating temperature phototransistor optocouplers tm may 2006 FOD814 series, fod617 series, fod817 series 4-pin high operating temperature phototransistor optocouplers features ac input response (FOD814 only) applicable to pb-free ir re?w soldering compact 4-pin package current transfer ratio in selected groups: fod617a: 40?0% fod817: 50?00% fod617b: 63?25% fod817a:80?60% fod617c: 100?00% fod817b: 130?60% fod617d: 160?20% fod817c:200?00% FOD814: 20?00% fod817d:300?00% FOD814a: 50?50% c-ul, ul and vde approved high input-output isolation voltage of 5000vrms minimum bv ceo of 70v guaranteed higher operating temperatures (versus h11axxx counterparts) applications FOD814 series ac line monitor unknown polarity dc sensor t elephone line interface fod617 and fod817 series po w er supply regulators digital logic inputs microprocessor inputs description the FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. the fod617/817 series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. functional block diagram 4 1 1 anode, cathode 2 4 3 cathode, anode collector emitter 1 2 4 3 emitter collector anode cathode FOD814 fod617/817
2 www.fairchildsemi.com FOD814 series, fod617 series, fod817 series rev. 1.0.5 FOD814 series, fod617 series, fod817 series 4-pin high operating temperature phototransistor optocouplers absolute maximum ratings (t a = 25? unless otherwise speci?d.) symbol parameter v alue units FOD814 fod617/817 tot al device t stg storage temperature -55 to +150 ? t opr operating temperature -55 to +105 -55 to +110 ? t sol lead solder temperature 260 for 10 sec ? p tot t otal power dissipation 200 mw emitter i f continuous forward current ?0 50 ma v r reverse voltage 6 p d po w er dissipation derate above 100? 70 1.7 mw mw/? detector v ceo collector-emitter voltage 70 v v eco emitter-collector voltage 6 6 (fod817) 7 (fod617) v i c continuous collector current 50 ma p c collector power dissipation derate above 90? 150 2.9 mw mw/?
3 www.fairchildsemi.com FOD814 series, fod617 series, fod817 series rev. 1.0.5 FOD814 series, fod617 series, fod817 series 4-pin high operating temperature phototransistor optocouplers electrical characteristics (t a = 25? unless otherwise speci?d.) individual component characteristics t ransfer characteristics (t a = 25? unless otherwise speci?d.) *typical values at t a = 25? symbol parameter device test conditions min. typ.* max. unit emitter v f f orward voltage FOD814 i f = ?0ma 1.2 1.4 v fod617 i f = 60ma 1.35 1.65 fod817 i f = 20ma 1.2 1.4 i r reverse leakage current fod617 v r = 6.0v 0.001 10 ? fod817 v r = 4.0v 10 c t te r minal capacitance FOD814 v = 0, f = 1khz 50 250 pf fod617 v = 0, f = 1khz 30 250 fod817 v = 0, f = 1khz 30 250 detector i ceo collector dark current FOD814 v ce = 20v, i f = 0 100 na fod617c/d v ce = 10v, i f = 0 1 100 fod617a/b v ce = 10v, i f = 0 1 50 fod817 v ce = 20v, i f = 0 100 bv ceo collector-emitter breakdown v oltage FOD814 i c = 0.1ma, i f = 0 70 v fod617 i c = 100?, i f = 0 70 fod817 i c = 0.1ma, i f = 0 70 bv eco emitter-collector breakdown v oltage FOD814 i e = 10?, i f = 0 6 v fod617 i e = 10?, i f = 0 7 fod817 i e = 10?, i f = 0 6 symbol dc characteristic device test conditions min. typ.* max. unit ctr current transfer ratio FOD814 i f = ?ma, v ce = 5v (1) 20 300 % FOD814a 50 150 fod617a i f = 10ma, v ce = 5v (1) 40 80 fod617b 63 125 fod617c 100 200 fod617d 160 320 fod617a i f = 1ma, v ce = 5v (1) 13 fod617b 22 fod617c 34 fod617d 56 fod817 i f = 5ma, v ce = 5v (1) 50 600 fod817a 80 160 fod817b 130 260 fod817c 200 400 fod817d 300 600 v ce (sat) collector-emitter saturation voltage FOD814 i f = ?0ma, i c = 1ma 0.1 0.2 v fod617 i f = 10ma, i c = 2.5ma 0.4 fod817 i f = 20ma, i c = 1ma 0.1 0.2
4 www.fairchildsemi.com FOD814 series, fod617 series, fod817 series rev. 1.0.5 FOD814 series, fod617 series, fod817 series 4-pin high operating temperature phototransistor optocouplers t ransfer characteristics (continued) (t a = 25? unless otherwise speci?d.) isolation characteristics *typical values at t a = 25? notes: 1. current transfer ratio (ctr) = i c /i f x 100%. 2. for test circuit setup and waveforms, refer to page 4. 3. for this test, pins 1 and 2 are common, and pins 3 and 4 are common. symbol ac characteristic device test conditions min. typ.* max. unit f c cut-off frequency FOD814 v ce = 5v, i c = 2ma, r l = 100 ? , -3db 15 80 khz t r response time (rise) FOD814 v ce = 2 v, i c = 2ma, r l = 100 ? (2) ?18 ? fod617 fod817 t f response time (fall) FOD814 3 18 ? fod617 fod817 symbol characteristic device test conditions min. typ.* max. units v iso input-output isolation v oltage (3) FOD814 f = 60hz, t = 1 min, i i-o 2? 5000 vac(rms) fod617 fod817 r iso isolation resistance FOD814 v i-o = 500vdc 5x10 10 1x10 11 ? fod617 fod817 c iso isolation capacitance FOD814 v i-o = 0, f = 1 mhz 0.6 1.0 pf fod617 fod817
5 www.fairchildsemi.com FOD814 series, fod617 series, fod817 series rev. 1.0.5 FOD814 series, fod617 series, fod817 series 4-pin high operating temperature phototransistor optocouplers t ypical electrical/optical characteristics (t a = 25? unless otherwise speci?d.) 0 1 2 3 4 5 6 collector power dissipation p c (mw) fig. 1 collector power dissipation vs. ambient temperature (FOD814) forward current i f (ma) collector-emitter saturation volta ge v ce (sat) (v) fig. 3 collector-emitter saturation voltage vs. forward current fig. 5 forward current vs. forward voltage (fod617/817) forward voltage v f (v) forward current i f (ma) forward current i f (ma) current transfer ratio ctr ( %) fig. 6 current transfer ratio vs. forward current ambient temperature t a ( c) 15.0 12.5 10.0 7.5 5.0 2.5 0 v = 5v ta= 25 c ic = 0 .5 m a 1m a 3m a ta = 25 c 7m a 5m a 0 0. 1 0.2 0.5 1 2 5 10 20 50 100 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 -55 0 50 100 150 200 collector power dissipation p c (mw) fig. 2 collector power dissipation vs. ambient temperature (fod617/817) ambient temperature t a ( c) -40 -20 0 20 40 60 80 100 120 -55 0 50 100 150 200 0.5 1.0 1.5 2.0 t a = 110 o c 75 o c 50 o c 25 o c 0 o c -30 o c -55 o c 0.1 1 10 100 FOD814 fod617/817 fig. 4 forward current vs. forward voltage (FOD814) forward voltage v f (v) forward current i f (ma) 0.5 1.0 1.5 2.0 t a = 105 o c 75 o c 50 o c 25 o c 0 o c -30 o c -55 o c 0.1 1 10 100
6 www.fairchildsemi.com FOD814 series, fod617 series, fod817 series rev. 1.0.5 FOD814 series, fod617 series, fod817 series 4-pin high operating temperature phototransistor optocouplers t ypical electrical/optical characteristics (continued) (t a = 25? unless otherwise speci?d.) ambient temperature t a ( c) fig. 10 collector-emitter saturation voltage vs. ambient temperature collector-emitter saturation voltage v ce (sat) (v) led power dissipation p led (mw) -60 -40 -20 0 20 40 60 80 100 120 0.00 0.02 0.04 0.06 0.08 0.10 0.12 i f = 20ma i c = 1ma fig. 11 led power dissipation vs. ambient temperature (FOD814) ambient temperature t a ( c) -40 -20 0 20 40 60 80 100 120 -55 0 20 40 60 80 100 led power dissipation p led (mw) fig. 12 led power dissipation vs. ambient temperature (fod617/817) ambient temperature t a ( c) -40 -20 0 20 40 60 80 100 120 -55 0 20 40 60 80 100 ambient temperature t a ( c) relative current transfer ratio (%) fig. 9 relative current transfer ratio vs. ambient temperature -60 -40 -20 0 20 40 60 80 100 120 i f = 1 ma v ce = 5v 0 20 40 60 80 100 120 140 160 FOD814 i f = 5ma v ce = 5v fod617/817 collector-emitter voltage v ce (v) collector current i c (ma) fig. 7 collector current vs. collector-emitter voltage (FOD814) ta= 25 c i = 30m a pc (m ax.) 5m a 10m a 1m a f 20 m a 01020304 05060708090100 0 10 20 30 40 50 collector-emitter voltage v ce (v) collector current i c (ma) ta = 25 c i i f = 30ma pc(max.) 5m a 10ma 20ma 30 25 20 15 10 5 0 01020304 05060708090 fig. 8 collector current vs. collector-emitter voltage (fod617/817)
7 www.fairchildsemi.com FOD814 series, fod617 series, fod817 series rev. 1.0.5 FOD814 series, fod617 series, fod817 series 4-pin high operating temperature phototransistor optocouplers t ypical electrical/optical characteristics (continued) (t a = 25? unless otherwise speci?d.) t est circuit for response time te st circuit for frequency response input r output input r d output l vc c td tr tf ts 90% 10% output r d l r vc c load resistance r l (k ? ) response time ( s) fig. 13 response time vs. load resistance frequency f (khz) vo lt a ge gain a v (db) fig. 14 frequency response ce v = 2 v ic = 2m a ta = 25 c tr tf ts td r =10k l 1k 100 v ce = 2v ic = 2ma ta = 25 c -20 0.1 0.1 0.2 0. 5 1 2 5 10 0.2 0.5 1 2 5 10 20 50 100 0.2 -10 0 15 2 0.5 1000 100 10 ambient temperature t a ( c) fig. 15 collector dark current vs. ambient temperature collector dark current i ceo (na) -60 -40 -20 0 20 40 60 80 100 120 0.01 0.1 1 10 100 1000 10000 v ce = 20v
8 www.fairchildsemi.com FOD814 series, fod617 series, fod817 series rev. 1.0.5 FOD814 series, fod617 series, fod817 series 4-pin high operating temperature phototransistor optocouplers pa ck ag e dimensions (through hole) package dimensions (surface mount) footprint dimensions seating plan e 0.200 (5.10) 0.161 (4.10) 0.157 (4.00) 0.118 (3.00) 0.130 (3.30) 0.091 (2.30) 0.150 (3.80) 0.110 (2.80) 0.110 (2.79) 0.090 (2.29) 0.024 (0.60) 0.016 (0.40) 0.020 (0.51) typ 0.300 (7.62) typ 0.010 (0.26) 0.276 (7.00) 0.236 (6.00) 0.312 (7.92) 0.288 (7.32) seati n g plan e 0.200 (5.10) 0.161 (4.10) 0.157 (4.00) 0.118 (3.00) 0.276 (7.00) 0.236 (6.00) 0.024 (0.60) 0.004 (0.10) 0.051 (1.30) 0.043 (1.10) 0.110 (2.79) 0.090 (2.29) 0.412 (10.46) 0.388 (9.86) 0.312 (7.92) 0.288 (7.32) 0.049 (1.25) 0.010 (0.26) 0.030 (0.76) lead coplanarity 0.004 (0.10) max 1.5 2.54 1.3 9 se a t in g pla n e 0.010 (0.26) 0.200 (5.10) 0.161 (4.10) 0.130 (3.30) 0.091 (2.30) 0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40) 0.110 (2.79) 0.090 (2.29) 0.157 (4.00) 0.118 (3.00) 0.276 (7.00) 0.236 (6.00) 0.312 (7.92) 0.288 (7.32) 0.291 (7.40) 0.252 (6.40) 0.110 (2.80) 0.011 (1.80) 0.42 (10.66) 0.38 (9.66) pa ck ag e dimensions (0.4? lead spacing) (surface mount) note: all dimensions are in inches (millimeters).
9 www.fairchildsemi.com FOD814 series, fod617 series, fod817 series rev. 1.0.5 FOD814 series, fod617 series, fod817 series 4-pin high operating temperature phototransistor optocouplers ordering information marking information option part number example description s FOD814s surface mount lead bend sd FOD814sd surface mount; tape and reel w FOD814w 0.4" lead spacing 300 FOD814300 vde approved 300w FOD814300w vde approved, 0.4" lead spacing 3s FOD8143s vde approved, surface mount 3sd FOD8143sd vde approved, surface mount, tape & reel 1 2 6 4 3 5 de?nitions 1f airchild logo 2d e vice number 3 vde mark (note: only appears on parts ordered with vde option ?see order entry table) 4 one digit year code 5t wo digit work week ranging from ?1 to ?3 6 assembly package code 814 x vy zz
10 www.fairchildsemi.com FOD814 series, fod617 series, fod817 series rev. 1.0.5 FOD814 series, fod617 series, fod817 series 4-pin high operating temperature phototransistor optocouplers carrier tape speci?cations note: all dimensions are in millimeters. description symbol dimensions in mm (inches) t ape wide w 16 ?0.3 (.63) pitch of sprocket holes p 0 4 ?0.1 (.15) distance of compartment f p 2 7.5 ?0.1 (.295) 2 ?0.1 (.079) distance of compartment to compartment p 1 12 ?0.1 (.472) compartment a0 10.45 ?0.1 (.411) b0 5.30 ?0.1 (.209) k0 4.25 ?0.1 (.167) p 2 p 1 p 0 1.75 0.1 0.3 0.05 1.55 0.05 f b0 a0 k0 w
11 www.fairchildsemi.com FOD814 series, fod617 series, fod817 series rev. 1.0.5 FOD814 series, fod617 series, fod817 series 4-pin high operating temperature phototransistor optocouplers lead free recommended ir re?ow condition recommended wave soldering condition pro?le feature pb-sn solder assembly lead free assembly preheat condition (tsmin-tsmax / ts) 100? ~ 150? 60 ~ 120 sec 150? ~ 200? 60 ~120 sec melt soldering zone 183? 60 ~ 120 sec 217? 30 ~ 90 sec p eak temperature (tp) 240 +0/-5? 260 +0/-5? ramp-down rate 6?/sec max. 6?/sec max. pro?le feature for all solder assembly p eak temperature (tp) max 260? for 10 sec time (sec) ts (preheat) 25 c temperature ( c) tsmin tsmax tp soldering zon ramp-down
12 www.fairchildsemi.com FOD814 series, fod617 series, fod817 series rev. 1.0.5 FOD814 series, fod617 series, fod817 series 4-pin high operating temperature phototransistor optocouplers rev. i19 trademarks t he following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any pr oducts herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these sp ec if ic at io ns do not expand the terms of fairchild?s worldwide terms and conditions, sp ec if ic a lly the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex activearray bottomless bu ild it now coolfet cross volt dome ecos park e 2 cmos en signa fact fast fastr fps frfet gl obaloptoisolator gto hisec i 2 c i-lo im plieddisconnect in tellimax isoplanar littlefet microc oupler mi crofet mi cropak microwire m sx msxpro ocx ocxpro optologic optoplanar pacman pop po wer247 poweredge powersaver powertrench qfet qs qt optoel ectronics quiet series rapidconfigure rapidconnect serdes scalarpump silent switcher smart start spm stealth superfet supersot-3 supersot-6 supersot-8 sync fet tcm ti nylogic tinyopto tr utranslation uhc unifet ultrafet vcx wire fact quiet series ac ross the board. around the world. t he power franchise pr ogrammable active droop datasheet identification product status definition ad vance information formative or in design th is datasheet contains the design specifications for product development. specifications may change in any manner without notice. pr eliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fa ir child semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. ob solete not in production this datasheet contains specifications on a product t hat has been discontinued by fairchild semiconductor. t he datasheet is printed for reference information only.


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