TESDG5V0A 5v, 2-channels esd protection array small signal diode ? protect two i/o lines and power line ? low leakage, low operating and clamping voltage ? low capacitance (<0.9pf) for high-speed interfaces ? pb free version and rohs compliant min max min max 1.50 1.70 0.059 0.067 1.10 1.30 0.043 0.051 ? case : sot-563 package, molded plastic 0.17 0.27 0.007 0.011 1.50 1.70 0.059 0.067 0.50 0.60 0.020 0.024 ? cordless phones ? monitors and flat panel displays ? digital cameras ? mp3 players part no. package code package packing marking TESDG5V0A rfg sot-563 3k / 7" reel 2a maximum ratings electrical characteristics reverse breakdown voltage i r = 1ma reverse leakage current v r =5v junction capacitance 0.9(typ.) pf sot-563 v r =0v, f=1mhz c j 9.8 v i pp =3a,tp=8/20 s 16.0 1 clamping voltage i pp =1a,tp=8/20 s v c - i r -ua v (br) 6-v units working voltage v rwm -5v type number symbol min max junction and storage temperature range t j , t stg . -55 to + 150 . c esd per iec 61000-4-2 (air) esd per iec 61000-4-2 (contact) v esd 15 8 v reverse peak pulse current (tp = 8/20 s) i ppr 1 ua peak pulse current (tp = 8/20 s) i pp 3 a peak pulse power (tp = 8/20 s) p pp 50 w maximum ratings and electrical characteristics rating at 25 c ambient temperature unless otherwise specified. type number symbol value units ? high temperature soldering guaranteed: 260 c/10s a dimensions e features f unit (mm) ? iec61000-4-2 rating. 16kv(air), 8kv(contact) b c ? green compound (halogen free) with suffix "g" on packing code and prefix "g" on date code mechanical data ? terminal: matte tin plated, lead free, solderable per mil-std-202, method 202 guaranteed 0.50 bsc 0.02 bsc unit (inch) d ordering information applications ? cellular handsets & accessories ? weight: 0.003 gram (approx.) ? marking code : 2a a d c g f e b version : a11
TESDG5V0A 5v, 2-channels esd protection array small signal diode rating and sharacteristic curves 0.01 0.1 1 10 0.1 1 10 100 100 0 peak pulse power ppp (kw) fig 3 admissible power dissipation curve 0 10 20 30 40 50 60 70 80 90 100 110 0 25 50 75 100 125 150 % of power derating fig 4 typical junction capacitance 0.0 0.2 0.4 0.6 0.8 1.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 junction capacitance (pf) fig 1 non-repetitive peak pulse power vs. pulse pulse duration (us) fig 2 pulse waveform 0 10 20 30 40 50 60 70 80 90 100 110 0 5 10 15 20 25 30 percent of i pp time (us) td=ipp/2 ambient tempeatature ( o c) reverse voltage (v) 10 11 12 13 14 15 16 17 18 0 0.5 1 1.5 2 2.5 3 clamping voltage, vc (v) waveform parameters : tr=8us, td=20us peak pulse current, ipp(a) version : a11
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