application high speed power switching features ?low on?esistance high speed switching low drive current 4 v gate drive device - - - can be driven from 5 v source suitable for dc ?dc convertor, motor drive, power switch, solenoid drive table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss ?0 v gate to source voltage v gss ?0 v drain current i d ?.5 a drain peak current i d(pulse) * ?0 a body?rain diode reverse drain current i dr ?.5 a channel dissipation pch** 10 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** value at tc = 25 ? d g s s type 1. gate 2. drain 3. source 4. drain l type dpak 1 2 3 1 2 3 4 4 dpak-1 2sj234 l , 2sj234 s silicon p channel mos fet
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown v (br)dss ?0 v i d = ?0 ma, v gs = 0 voltage gate to source breakdown v (br)gss ?0 v i g = ?00 ?, v ds = 0 voltage gate to source leak current i gss ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss ?00 ? v ds = ?5 v, v gs = 0 gate to source cutoff voltage v gs(off) ?.0 ?.0 v i d = ? ma v ds = ?0 v static drain to source on state r ds(on) 0.3 0.4 ? i d = ?.5 a resistance v gs = ?0 v * 0.5 0.7 i d = ?.5 a v gs = ? v * forward transfer admittance |y fs | 1.0 1.8 s i d = ?.5 a v ds = ?0 v * input capacitance ciss 245 pf v ds = ?0 v output capacitance coss 170 pf v gs = 0 reverse transfer capacitance crss 60 pf f = 1 mhz turn?n delay time t d(on) ? nsi d = ?.5 a rise time t r 25 ns v gs = ?0 v turn?ff delay time t d(off) 85 ns r l = 20 ? fall time t f ?2 ns body?rain diode forward v df ?.1 v i f = ?.5 a, v gs = 0 voltage body?rain diode reverse t rr 80 ns i f = ?.5 a, v gs = 0, recovery time di f / dt = 50 a / ? * pulse test 2sj234 l , 2sj234 s
20 15 10 5 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature derating ?2 4 ?6 ?8 ?10 ?1 ?2 ?3 ?4 ?5 drain current i (a) drain to source voltage v (v) d ds pulse test ?8 v ?6 v ?4 v ?3.5 v ?3 v ?10 v v = ?2.5 v gs 0 typical output characteristics drain to source voltage v (v) drain current i (a) ?0.1 ?0.3 ?1 ?3 ?10 ?30 ?100 ?0.05 ?0.1 ?0.3 ?10 ?30 ?50 ?3 ?1 ds d 100 ? pw = 10 ms (1 shot) dc operation (tc = 25?) 10 s operation in this area is limited by r (on) ds 1 ms ta = 25? maximum safe operation area gate to source voltage v (v) drain current i (a) gs d 0 2 ?4 6 8 10 ?2 ?4 ?6 ?8 ?10 ?25? tc = 25? 75? v = ?0 v pulse test ds typical transfer characteristics 2sj234 l , 2sj234 s
gate to source voltage v (v) drain to source saturation voltage v (on) (v) 0 ?2 ?4 ?6 ?8 ?10 ?0.4 ?0.8 ?1.2 ?1.6 ?2.0 gs ds pulse test ?3 a ?2 a i = ? a d drain to source saturation voltage vs. gage to source voltage case temperature tc (?) static drain?ource on state resistance r (on) ( ) ? ds v = ?0 v gs pulse test v = ?4 v gs i = ?3 a d ?2 a ? a ?3 a ?,?2 a ?40 0 40 80 120 160 0 0.4 0.8 1.2 1.6 2.0 static drain to source on state resistance vs. temperature drain current i (a) static drain?ource on state resistance r (on) ( ) ? ds ?0.2 ?0.5 ? ?2 ?5 ?0 ?20 0.05 0.1 0.2 0.5 1 2 5 d pulse test ?0 v v = ?4 v gs static drain to source on state resistance vs. drain current drain current i (a) forward transfer admittance |y | (s) ?0.2 ?0.5 ? ?2 ?5 ?0 ?20 0.05 0.1 0.2 0.5 1 2 5 d fs v = ?0 v pulse test ds 25? tc = 25? 75? forward transfer admittance vs. drain current 2sj234 l , 2sj234 s
reverse drain current i (a) reverse recovery time trr (ns) dr ?0.01 ?0.03 ?0.1 ?0.3 ? ?3 ?0 1 3 10 30 100 300 1000 di / dt = 50 a / s, ta = 25? v = 0 gs body ?drain diode reverse recovery time gate charge g (nc) drain to source voltage v (v) gate to source voltage v (v) ds gs q 0 4 8 12 16 20 ?50 ?40 ?30 ?20 ?0 0 ?20 ?6 ?2 ?8 ?4 0 ?0 v v = ?0 v dd v = ?25 v dd v ds v gs i = ?3 a d ?25 v dynamic input characteristics drain to source voltage v (v) capacitance c (pf) 0 ?0 ?20 ?30 ?40 ?50 10 100 1000 10000 ds ciss coss crss v = 0 f = 1 mhz gs typical capacitance vs. drain to source voltage ?0.01 ?0.03 ?0.1 ?0.3 ? ?3 ?0 1 3 10 30 100 300 1000 switching time t (ns) drain current i (a) d td (off) tf tr td (on) v = ?0 v,v ?30 v pw = 2 s, duty 1 % gs = . . dd switching characteristics 2sj234 l , 2sj234 s
source to drain voltage v (v) reverse drain current i (a) sd dr 0 ?0.4 ?0.8 ?.2 ?.6 ?2.0 0 ?2 ?4 ?6 ?8 ?0 pulse test ?0 v 0, 5 v ?5 v v = ?5 v gs reverse drain current vs. source to drain voltage 10 100 1 m 10 m 100 m 110 0.01 0.03 0.1 0.3 1.0 3 pulse width pw (s) normalized transient thermal impedance s (t) d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1 shot pulse tc = 25? ch ?c(t) = s(t) ch ?c ch ?c = 12.5? / w. tc = 25? p d = pw t pw t dm . 2sj234 l , 2sj234 s
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