? semiconductor components industries, llc, 2003 august, 2003 ? rev. 0 1 publication order number: bzx84c2v4et1/d bzx84c2v4et1 series zener voltage regulators 225 mw sot?23 surface mount this series of zener diodes is offered in the convenient, surface mount plastic sot?23 package. these devices are designed to provide voltage regulation with minimum space requirement. they are well suited for applications such as cellular phones, hand held portables, and high density pc boards. specification features: ? 225 mw rating on fr?4 or fr?5 board ? zener breakdown voltage range ? 2.4 v to 75 v ? package designed for optimal automated board assembly ? small package size for high density applications ? esd rating of class 3 (>16 kv) per human body model ? peak power ? 225 watt (8 x 20 s) mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode indicated by polarity band flammability rating: ul94 v?0 maximum ratings rating symbol max unit peak power dissipation @ 20 s (note 1) @ t l 25 c p pk 225 watts total power dissipation on fr?5 board, (note 2) @ t a = 25 c derated above 25 c p d 225 1.8 mw mw/ c thermal resistance ? junction to ambient r ja 556 c/w total power dissipation on alumina substrate, (note 3) @ t a = 25 c derated above 25 c p d 300 2.4 mw mw/ c thermal resistance ? junction to ambient r ja 417 c/w junction and storage temperature range t j , t stg ?65 to +150 c 1. non?repetitive current pulse per figure 9 2. fr?5 = 1.0 x 0.75 x 0.62 in. 3. alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina device package shipping ordering information sot?23 case 318 style 8 3 cathode 1 anode bzx84cxxxet1 sot?23 3000/tape & reel marking diagram see specific marking information in the device marking column of the electrical characteristics table on page 2 of this data sheet. device marking information xxx = specific device code m = date code xxx 2the at1o suffix refers to an 8 mm, 7 inch reel. the at3o suffix refers to an 8 mm, 13 inch reel. m bzx84cxxxet3 sot?23 10,000/tape & reel 3 1 2 devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. http://onsemi.com
bzx84c2v4et1 series http://onsemi.com 2 electrical characteristics (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.95 v max. @ i f = 10 ma) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f v z maximum temperature coefficient of v z c max. capacitance @ v r = 0 and f = 1 mhz zener voltage regulator i f v i i r i zt v r v z v f electrical characteristics (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.90 v max. @ i f = 10 ma) v z1 (volts) @i zt1 =5ma (note 4) z zt1 (ohms) v z2 (volts) @i zt2 =1ma (note 4) z zt2 (ohms) v z3 (volts) @i zt3 =20ma (note 4) z zt3 (ohms) max reverse leakage current vz (mv/k) @ i zt1 = 5 ma c (pf) device device marking min nom max (ohms) @ i zt1 = 5 ma min max (ohms) @ i zt2 = 1 ma min max (ohms) @ i zt3 = 20 ma v r volts i r a @ min max c (pf) @ v r = 0 f = 1 mhz bzx84c3v3et1 z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 ?3.5 0 450 bzx84c4v7et1 z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 ?3.5 0.2 260 bzx84c5v1et1 z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 ?2.7 1.2 225 bzx84c5v6et1 z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 ?2.0 2.5 200 bzx84c6v2et1 z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 bzx84c6v8et1 z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 bzx84c7v5et1 z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 bzx84c10et1 z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 bzx84c12et1 y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 bzx84c15et1 y4 14.3 15 15.8 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 bzx84c16et1 y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 bzx84c18et1 y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 bzx84c24et1 y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 v z1 below @i zt1 =2ma z zt1 below v z2 below @i zt2 = 0.1 ma z zt2 below v z3 below @i zt3 =10ma z zt3 below max reverse leakage current vz (mv/k) below @ i zt1 = 2 ma c (pf) device device marking min nom max below @ i zt1 = 2 ma min max below @ i zt4 = 0.5 ma min max below @ i zt3 = 10 ma v r volts i r a @ min max c (pf) @ v r = 0 f = 1 mhz bzx84c27et1 y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70 4. zener voltage is measured with a pulse test current i z at an ambient temperature of 25 c
bzx84c2v4et1 series http://onsemi.com 3 typical characteristics vz , temperature coefficient (mv/ c) q v z , nominal zener voltage (v) -3 -2 -1 0 1 2 3 4 5 6 7 8 12 11 10 9 8 7 6 5 4 3 2 figure 1. temperature coefficients (temperature range ? 55 c to +150 c) typical t c values v z @ i zt vz , temperature coefficient (mv/ c) q 100 10 1 10 100 v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range ? 55 c to +150 c) v z @ i zt 100 v z , nominal zener voltage figure 3. effect of zener voltage on zener impedance 10 1 z zt , dynamic impedance ( ) w 1000 100 10 1 t j = 25 c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma 20 ma v f , forward voltage (v) figure 4. typical forward voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1 75 v (mmbz5267blt1) 91 v (mmbz5270blt1) 150 c 75 c 25 c 0 c typical t c values
bzx84c2v4et1 series http://onsemi.com 4 typical characteristics c, capacitance (pf) 100 v z , nominal zener voltage (v) figure 5. typical capacitance 1000 100 10 1 10 1 bias at 50% of v z nom t a = 25 c 0 v bias 1 v bias 12 v z , zener voltage (v) 100 10 1 0.1 0.01 10 8 6 4 2 0 t a = 25 c i z , zener current (ma) v z , zener voltage (v) 100 10 1 0.1 0.01 10 30 50 70 90 t a = 25 c i r , leakage current ( a) m 90 v z , nominal zener voltage (v) figure 6. typical leakage current 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80 70 60 50 40 30 20 10 0 +150 c +25 c -55 c i z , zener current (ma) figure 7. zener voltage versus zener current (v z up to 12 v) figure 8. zener voltage versus zener current (12 v to 91 v) 100 figure 9. 8 20 s pulse waveform 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s half value i rsm /2 @ 20 s % of peak pulse current peak value i rsm @ 8 s
bzx84c2v4et1 series http://onsemi.com 5 package dimensions sot?23 to?236ab case 318?09 issue ah style 8: pin 1. anode 2. no connection 3. cathode dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0385 0.0498 0.99 1.26 d 0.0140 0.0200 0.36 0.50 g 0.0670 0.0826 1.70 2.10 h 0.0040 0.0098 0.10 0.25 j 0.0034 0.0070 0.085 0.177 k 0.0180 0.0236 0.45 0.60 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.0984 2.10 2.50 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maxiumum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318-01, -02, and -06 obsolete, new standard 318-09. 1 3 2 a l bs v g d h c k j
bzx84c2v4et1 series http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bzx84c2v4et1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com n. american technical support : 800?282?9855 toll free usa/canada
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