data sheet silicon transistor 2sc3582 microwave low noise amplifier npn silicon epitaxial transistor data sheet document no. p10359ej2v1ds00 (2nd edition) date published march 1997 n printed in japan 1984 ? description the 2sc3582 is an npn epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from vhf band to uhf band. low- noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. this is achieved by direct nitride passivated base surface process (dnp process) which is an nec proprietary new fabrication technique. features ? nf 1.2 db typ. @f = 1.0 ghz ? ga 12 db typ. @f = 1.0 ghz absolute maximum ratings (t a = 25 c) collector to base voltage v cbo 20 v collector to emitter voltage v ceo 10 v emitter to base voltage v ebo 1.5 v collector current i c 65 ma total power dissipation p t 600 mw junction temperature t j 150 c storage temperature t stg 65 to +150 c electrical characteristics (t a = 25 c) characteristic symbol min. typ. max. unit test conditions collector cutoff current i cbo 1.0 av cb = 10 v, i e = 0 emitter cutoff current i ebo 1.0 av eb = 1 v, i c = 0 dc current gain h fe 50 100 250 v ce = 8 v, i c = 20 ma gain bandwidth product f t 8 ghz v ce = 8 v, i c = 20 ma feed-back capacitance c re 0.4 0.9 pf v cb = 10 v, i e = 0, f = 1.0 mhz insertion power gain s 21e 2 911 dbv ce = 8 v, i c = 20 ma, f = 1.0 ghz maximum available gain mag 13 db v ce = 8 v, i c = 20 ma, f = 1.0 ghz noise figure nf 1.2 2.5 db v ce = 8 v, i e = 7 ma, f = 1.0 ghz h fe classification class k marking k h fe 50 to 250 packafe dimensions in millimeters (inches) 5.2 max. (0.204 max.) 0.5 (0.02) 2.54 (0.1) 1. 2. 3. base emitter collector eiaj jedec iec : sc-43b : to-92 : pa33 1.27 (0.05) 5.5 max. (0.216 max.) 4.2 max. (0.165 max.) 1.77 max. (0.069 max.) 14 min. (0.551 min.) 123
2 2sc3582 typical characteristics (t a = 25 c) total power dissipation vs. ambient temperature 1000 500 0 10 20 50 100 200 50 1 5 10 50 0.5 100 150 t a -ambient temperature- c i c -collector current-ma dc current gain vs. collector current p t -total power dissipation-mw h fe -dc current gain v ce = 8 v 0 5 10 15 0.5 1 5 10 50 70 i c -collector current-ma insertion gain vs. collector current |s 21e | 2 -insertion gain-db v ce = 8 v f = 1.0 ghz 0.1 0.5 0.3 0.2 0.7 1 3 2 13 257102030 v cb -collector to base voltage-v feed-back capacitance vs. collector to base voltage c re -feed-back capacitance-pf f = 1.0 mhz 0 12 8 4 16 20 0.1 0.3 0.2 0.5 70. 1.0 2.0 3.0 f-frequency-ghz insertion gain, maximum available gain vs. frequency mag-maximum available gain-db |s 21e | 2 -insetion gain -db v ce = 8 v i c = 20 ma 1 5 3 2 7 10 30 20 13 257102030 i c -collector current-ma gain bandwidth produut vs. collector current f t -gain bandwidth product-ghz v ce = 8 v free air |s 21e | 2 mag
3 2sc3582 0 2 1 5 4 3 7 6 0.5 1 5 10 50 70 i c -collector current-ma noise figure vs. collector current nf-noise figure-db v ce = 8 v f = 1.0 ghz s-parameter v ce = 8.0 v, i c = 5.0 ma, z o = 50 f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 400 600 800 1000 1200 1400 1600 1800 2000 0.668 0.425 0.294 0.214 0.167 0.132 0.098 0.073 0.071 0.070 45.8 61.5 73.2 79.4 79.5 79.8 75.2 72.0 63.7 60.6 11.385 7.014 5.189 3.967 3.485 2.831 2.604 2.182 2.135 1.879 128.9 103.7 88.6 75.4 64.7 57.0 48.5 39.1 31.0 21.6 0.049 0.063 0.088 0.103 0.123 0.147 0.175 0.192 0.215 0.221 83.5 76.3 68.5 64.5 60.8 55.9 50.7 47.9 44.2 38.0 0.833 0.681 0.620 0.580 0.561 0.549 0.561 0.573 0.595 0.617 26.9 31.1 36.0 40.8 46.3 53.4 60.3 69.1 71.8 78.0 v ce = 8.0 v, i c = 20 ma, z o = 50 f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 400 600 800 1000 1200 1400 1600 1800 2000 0.333 0.195 0.158 0.156 0.146 0.143 0.134 0.132 0.131 0.130 51.4 49.2 44.3 41.0 35.8 30.7 25.8 22.3 20.0 17.8 17.197 8.729 6.149 4.603 3.997 3.205 2.939 2.463 2.396 2.107 107.7 89.7 78.8 68.7 60.4 54.1 46.7 38.1 30.7 22.1 0.053 0.064 0.078 0.111 0.136 0.168 0.185 0.218 0.234 0.238 97.5 90.1 80.3 70.0 64.2 58.1 53.2 47.3 41.3 36.5 0.638 0.585 0.573 0.549 0.537 0.524 0.524 0.524 0.557 0.579 29.7 31.8 35.0 38.2 42.4 57.1 55.4 62.0 68.5 74.8
4 2sc3582 s-parameter a n g l e o f r e f l e c t i o n c o e f f c i e n t i n d e g r e e s 20 30 40 50 00 60 70 80 90 100 110 120 130 140 150 - 160 - 150 - 140 - 130 - 120 - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 0.28 0.22 0.30 0.20 0.32 0.18 0.34 0.16 0.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.46 0.04 0.21 0.19 0.17 0.15 0.13 0.11 0.09 0.07 0.05 0.03 0.29 0.31 0.33 0.35 0.37 0.39 0.41 0.43 0.45 0.47 0.02 0.48 0.01 0.49 0 0 0.49 0.01 0.48 0.02 0.47 0.03 0.46 0.04 0.45 0.05 0.44 0.06 0.43 0.07 0.42 0.08 0.41 0.09 0.40 0.10 0.39 0.11 0.38 0.12 0.37 0.13 0.36 0.14 0.35 0.15 0.34 0.16 0.33 0.17 0.32 0.18 0.31 0.19 0.30 0.20 0.29 0.21 0.28 0.22 0.27 0.23 0.26 0.24 0.25 0.25 0.24 0.26 0.23 0.27 w a v e l e n g t h s t o w a r d l o a d w a v e l e n g t h s t o w a r d g e n e r a t o r 2.0 50 10 6.0 4.0 3.0 1.8 1.6 1.4 1.2 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1.0 ( +jx CCCC z o ) 0.2 0.4 0.6 0.8 1.0 0.8 0.7 0.6 0.3 0.2 0.1 0.2 1.0 0.8 0.6 0.4 0.2 1.0 0.8 0.6 0.4 0.4 0.5 5.0 10 50 3.0 4.0 1.8 2.0 1.2 1.0 0.9 1.4 1.6 reactance component ( r CCCC z o ) ne g a t ive r e a c t a n c e c om p o n e n t p os i t i v e r e a c t a n c e co m p o n e n t 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 0 ( - jx CCCC z o ) 20 20 0.2 0.4 0.6 0.8 1.0 s 11e , s 22e -frequency s 21e -frequency 90 0 30 - 30 60 - 60 180 150 - 150 120 - 120 - 90 4 0 8 12 16 20 s 21e 0.2 ghz 0.2 ghz i c = 5 ma i c = 20 ma 90 0 30 - 30 60 - 60 180 150 - 150 120 - 120 - 90 0.05 0 0.10 0.15 0.20 0.25 s 12e 2.0 ghz i c = 20 ma i c = 5 ma s 12e -frequency v ce = 8 v 200 mhz step condition v ce = 8 v condition v ce = 8 v condition 0.2 ghz 0.2 ghz 1.4 ghz 1.4 ghz i c = 20 ma i c = 5 ma i c = 5 ma s 11e s 22e i c = 20 ma 0.2 ghz
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2sc3582 no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96. 5
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