View NLAS324-D_2601830.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? semiconductor components industries, llc, 2002 january, 2002 rev. 2 1 publication order number: nlas324/d nlas324 dual spst analog switch, low voltage, single supply the nlas324 is a dual spst (single pole, single throw) switch, similar to 1/2 a standard 4066. the device permits the independent selection of 2 analog/digital signals. available in the ultrasmall 8 package. the use of advanced 0.6 m cmos process, improves the r on resistance considerably compared to older higher voltage technologies. ? on resistance is 20 w typical at 5.0 v ? matching is < 1 w between sections ? 2 6 v operating range ? ultra low < 5 pc charge injection ? ultra low leakage < 1 na at 5.0 v, 25 c ? wide bandwidth > 200 mhz, 3 db ? cmos/ttl compatible ? 2000 v esd (hbm) ? ron flatness +/ 6 w at 5.0 v ? us8 package ? negative enable ? switches are independent figure 1. pinout v cc no1 com1 gnd in2 nc2 1 2 3 8 7 6 com2 in1 45 http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. ordering information marking diagram pin assignment 1 2 3 in2 nc1 gnd 4 5 com1 in1 6 function table l h on/off enable input state of analog switch on off 7 8 v cc com2 nc2 us8 us suffix case 493 8 1 1 8 l7 d l7 = device code d = date code
nlas324 http://onsemi.com 2 maximum ratings symbol parameter value unit v cc dc supply voltage 0.5 to 7.0 v v i dc input voltage 0.5 to 7.0 v v o dc output voltage 0.5 to 7.0 v i ik dc input diode current v i < gnd 50 ma i ok dc output diode current v o < gnd 50 ma i o dc output sink current 50 ma i cc dc supply current per supply pin 100 ma i gnd dc ground current per ground pin 100 ma t stg storage temperature range 65 to 150 c t l lead temperature, 1 mm from case for 10 seconds 260 c t j junction temperature under bias 150 c ja thermal resistance (note 1) 250 c/w p d power dissipation in still air at 85 c 250 mw msl moisture sensitivity level 1 f r flammability rating oxygen index: 28 to 34 ul 94 v0 @ 0.125 in v esd esd withstand voltage human body model (note 2) machine model (note 3) charged device model (note 4) > 2000 > 150 n/a v maximum ratings are those values beyond which damage to the device may occur. exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. functional operation under absolute maximumrated conditions is not implied. functional operation should be restricted to the recommended operating conditions. 1. measured with minimum pad spacing on an fr4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow. 2. tested to eia/jesd22a114a. 3. tested to eia/jesd22a115a. 4. tested to jesd22c101a. recommended operating conditions symbol characteristics min max unit v cc positive dc supply voltage 2.0 5.5 v v in digital input voltage (enable) gnd 5.5 v v io static or dynamic voltage across an off switch gnd v cc v v is analog input voltage (no, com) gnd v cc v t a operating temperature range, all package types 55 +125 c t r , t f input rise or fall time, v cc = 3.3 v + 0.3 v (enable input) v cc = 5.0 v + 0.5 v 0 0 100 20 ns/v device junction temperature versus time to 0.1% bond failures junction temperature c time, hours time, years 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 normalized failure rate 1 1 10 100 1000 failure rate of plastic = ceramic until intermetallics occur figure 2. failure rate vs. time junction temperature time, years t j = 130 c t j = 120 c t j = 110 c t j = 100 c t j = 90 c t j = 80 c
nlas324 http://onsemi.com 3 dc characteristics digital section (voltages referenced to gnd) guaranteed max limit symbol parameter condition v cc 55 to 25 c <85 c <125 c unit v ih minimum highlevel input voltage, enable inputs 2.0 3.0 4.5 5.5 1.5 2.1 3.15 3.85 1.5 2.1 3.15 3.85 1.5 2.1 3.15 3.85 v v il maximum lowlevel input voltage, enable inputs 2.0 3.0 4.5 5.5 0.5 0.9 1.35 1.65 0.5 0.9 1.35 1.65 0.5 0.9 1.35 1.65 v i in maximum input leakage current, enable inputs v in = 5.5 v or gnd 0 v to 5.5 v + 0.1 + 1.0 + 1.0 m a i cc maximum quiescent sup- ply current (per package) enable and vis = vcc or gnd 5.5 1.0 1.0 2.0 m a dc electrical characteristics analog section guaranteed max limit symbol parameter condition v cc 55 to 25 c <85 c <125 c unit r on maximum on resistance (figures 8 12) v in = v ih v is = v cc to gnd i is i = < 10.0ma 3.0 4.5 5.5 45 30 25 50 35 30 55 40 35 r flat(on) on resistance flatness v in = v ih i is i = < 10.0ma v is = 1v, 2v, 3.5v 4.5 4 4 5 i no(off) off leakage current, pin 2 (figure 3) v in = v il v no = 1.0 v, v com = 4.5 v or v com = 1.0 v and v no 4.5 v 5.5 1 10 100 na i com(off) off leakage current, pin 1 (figure 3) v in = v il v no = 4.5 v or 1.0 v v com = 1.0 v or 4.5 v 5.5 1 10 100 na ac electrical characteristics (input t r = t f = 3.0 ns) guaranteed max limit v cc 55 to 25 c <85 c <125 c symbol parameter test conditions (v) min typ max min typ max min typ max unit t on turnon time r l = 300 c l = 35 pf (figures 4, 5, and 13) 2.03 .04. 55.5 7.0 5.0 4.5 4.5 14 10 9 9 16 12 11 11 16 12 11 11 ns t off turnoff time r l = 300 c l = 35 pf (figures 4, 5, and 13) 2.03 .04. 5 5.5 11.0 7.0 5.0 5.0 22 14 10 10 24 16 12 12 24 16 12 12 ns typical @ 25, vcc = 5.0 v c in c no or c nc c com(off) c com(on) maximum input capacitance, select input analog i/o (switch off) common i/o (switch off) feedthrough (switch on) 8 10 10 20 pf
nlas324 http://onsemi.com 4 additional application characteristics (voltages referenced to gnd unless noted) v cc limit symbol parameter condition v 25 c unit bw maximum onchannel 3db bandwidth v i s = 0 dbm 3.0 190 mhz bw maximum on channel 3db bandwidth or minimum frequency response v is = 0 dbm v is centered between v cc and gnd 3 . 0 4.5 190 200 mhz or minimum frequency res onse v is centered between v cc and gnd (figures 6 and 14) 4.5 5.5 200 220 v o nl maximum feedthrou g h on loss v i s = 0 dbm @ 10 khz 3.0 2 db v onl maximum feedthrough on loss v is = 0 dbm @ 10 khz v is centered between v cc and gnd 3 . 0 4.5 2 2 db v is centered between v cc and gnd (figure 6) 4.5 5.5 2 2 v i so offchannel isolation f = 100 khz; v i s = 1 v rms 3.0 93 db v iso off channel isolation f = 100 khz v is = 1 v rms v is centered between v cc and gnd 3 . 0 4.5 93 db v is centered between v cc and gnd (figures 6 and 15) 4.5 5.5 q char g e injection v i s = v cc to gnd, f i s = 20 khz 3.0 1.5 q charge injection enable input to common i/o v is = v cc t o gnd , f is = 20 khz t r = t f = 3 ns 3 . 0 5.5 1 . 5 3.0 pc enable in ut to common i/o t r t f 3 ns r is = 0 , c l = 1000 pf qc * d v 5.5 3.0 c is l q = c l * d v out (figures 7 and 16) (figures 7 and 16) thd total harmonic distortion f i s = 20 hz to 1 mhz, r l = r g en = 600 , c l = 50 pf 3.3 0.3 % thd total harmonic distortion thd + noise f is = 20 hz to 1 mhz , r l = rgen = 600 , c l = 50 f v is = 3.0 v pp sine wave 3 . 3 5.5 0 . 3 0.15 % thd + noise v is 3.0 v pp sine wave v is = 5.0 v pp sine wave (fi 17) 5.5 0.15 is pp (figure 17) 55 1.00e+03 5 1.00e01 15 35 leakage (pa) 1.00e04 figure 3. switch leakage vs. temperature 1.00e+05 i no(off) temperature ( c) 1.00e03 1.00e02 1.00e+00 1.00e+02 1.00e+04 25 45 1.00e05 1.00e06 1.00e07 1.00e+01 65 85 105 125 145 i com(on) i com(off)
nlas324 http://onsemi.com 5 10% 10% 50% 50% 0 v input output v oh v cc v ol 35 pf com input no dut 90% 90% 50% 50% 0 v input output 35 pf input com dut no figure 4. t on /t off t on t off v oh v cc figure 5. t on /t off v cc t on t off 300 w v ol v out v cc 300 w v out 0.1 f
nlas324 http://onsemi.com 6 transmitted no com dut reference channel switch control/s test socket is normalized. off isolation is measured across an off channel. on loss is the bandwidth of an on switch. v iso , bandwidth and v onl are independent of the input signal direction. v iso = off channel isolation = 20 log for v in at 100 khz v onl = on channel loss = 20 log for v in at 100 khz to 50 mhz bandwidth (bw) = the frequency 3 db below v onl 50 w 50 w generator figure 6. off channel isolation/on channel loss (bw)/crosstalk (on channel to off channel)/v onl v out v in v out v in on off off com dut no d v out v cc gnd output v in c l figure 7. charge injection: (q) v in
nlas324 http://onsemi.com 7 35.0 30.0 20.0 25.0 15.0 10.0 0.0 35 20 40 15 25 0 45 12 0 60 0.6 30 0.4 0.2 r on ( w ) 0 v com (volts) figure 8. r on vs. v com and v cc (@25 c) figure 9. r on vs. v com and temperature, v cc = 2.0 v r on ( w ) 0 30 25 20 15 1.2 0.9 0.6 10 5 0 0.3 1.5 1.8 3 figure 10. r on vs. v com and temperature, v cc = 2.5 v v com (volts) figure 11. r on vs. v com and temperature, v cc = 3.0 v v com (volts) r on ( w ) r on ( w ) figure 12. r on vs. v com and temperature, v cc = 4.5 v v cc (v) time (ns) 80 2.0 5.5 5.0 4.5 3.0 0 0.2 2.4 0 1.6 2 1.2 0.8 2.4 0.4 2.8 8 14 6 10 0 16 18 55 c t on v is (volts) 10 20 40 50 70 12 10 0.8 1.2 1.4 1.6 1.8 5 30 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.1 2.4 2.7 4 2 3.2 3.6 4 4.4 5.0 25 c 85 c 125 c 55 c 25 c 85 c 125 c t off 55 c 25 c 85 c 125 c 55 c 25 c 85 c 125 c 0 2 2.5 1.5 13 0.5 3.5 4 4.5 5 v cc = 2.0 v cc = 2.5 v cc = 3.0 v cc = 4.5 20 30 10 0 40 50 60 70 80 v com (volts) r on ( w ) 0 0.6 0.4 0.2 r on ( w ) 55 c v is (volts) 12 0.8 1.2 1.4 1.6 1.8 25 c 85 c 125 c figure 13. switching time vs. supply voltage, t = 25 c
nlas324 http://onsemi.com 8 1.20 0.80 1.40 0.60 1.00 0.00 1.60 0.01 0 10 1 0.1 off isolation (db/div) v com (v) figure 14. on channel bandwidth and phase shift over frequency figure 15. off channel isolation q (pc) 10 100 10 100000 10000 1000 1 0.1 0.01 100 figure 16. charge injection vs. v com frequency (hz) thd (%) 0.0 3.0 5.0 frequency (mhz) 100 300 0.40 0.20 1.0 2.0 3.6 4.0 4.5 v cc = 3.0 v 5.5 v 3.3 v v cc = 5.0 v 10 0 figure 17. thd vs. frequency frequency (mhz) bandwidth (db/div) 0.01 100 10 1 300 0.1 phase (degrees) 0 5 bandwidth (on loss) phase (degrees) v cc = 5.0 v ta = 25 c v cc = 5.0 v ta = 25 c 100 50 1000000
nlas324 http://onsemi.com 9 device ordering information device nomenclature device order number circuit indicator technology device function package suffix package type tape and reel size nlas324us nl as 324 us us8 178 mm (7 ) 3000 unit tape trailer (connected to reel hub) no components 160 mm min tape leader no components 400 mm min components direction of feed cavity tape top tape figure 18. tape ends for finished goods figure 19. us8 reel configuration/orientation 1 8.00 + 0.30 0.10 4.00 2.00 1.75 3.50 0.25 1.00 0.25 typ 4.00 direction of feed tape dimensions mm 1.50 typ
nlas324 http://onsemi.com 10 figure 20. reel dimensions 13.0 mm 0.2 mm (0.512 in 0.008 in) 1.5 mm min (0.06 in) 50 mm min (1.969 in) 20.2 mm min (0.795 in) full radius t max g a reel dimensions tape size 8 mm t and r suffix us a max 178 mm (7 in) g 8.4 mm, + 1.5 mm, 0.0 (0.33 in + 0.059 in, 0.00) t max 14.4 mm (0.56 in) figure 21. reel winding direction direction of feed barcode label hole pocket
nlas324 http://onsemi.com 11 package dimensions dim a min max min max inches 1.90 2.10 0.075 0.083 millimeters b 2.20 2.40 0.087 0.094 c 0.60 0.90 0.024 0.035 d 0.17 0.25 0.007 0.010 f 0.20 0.35 0.008 0.014 g 0.50 bsc 0.020 bsc h 0.40 ref 0.016 ref j 0.10 0.18 0.004 0.007 k 0.00 0.10 0.000 0.004 l 3.00 3.20 0.118 0.126 m 0 6 0 6 n 5 10 5 10 p 0.28 0.44 0.011 0.017 r 0.23 0.33 0.009 0.013 s 0.37 0.47 0.015 0.019 u 0.60 0.80 0.024 0.031 v 0.12 bsc 0.005 bsc notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. dimension a" does not include mold flash, protrusion or gate burr. mold flash. protrusion and gate burr shall not exceed 0.140 mm (0.0055") per side. 4. dimension b" does not include inter-lead flash or protrusion. inter-lead flash and protrusion shall not e3xceed 0.140 (0.0055") per side. 5. lead finish is solder plating with thickness of 0.0076-0. 0203 mm. (300-800 inch). 6. all tolerance unless otherwise specified 0.0508 (0.0002"). l b a p g 4 1 5 8 c k d seating j s r u detail e v f h n r 0.10 typ m y x t detail e t m 0.10 (0.004) xy t 0.10 (0.004) plane us8 us suffix case 49301 issue o 3.8 1.8 typ 1.0 0.3 typ 0.5 typ (mm)
nlas324 http://onsemi.com 12 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. nlas324/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada

▲Up To Search▲

Price & Availability of NLAS324-D

	To Download NLAS324-D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .