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revisions ltr description date (yr-mo-da) approved a add two packages, c-5 and c-4. make changes to table i, and throughout. for case x, the dimensions have been changed and figure 2 has been replaced with d-10 configuration. inactivate devices 01xx and 02xx for new design. use m38510 device. add a truth table. 90-01-24 m. a. frye b add device types 05, 06, 07, and 08. add vendors cages 1es66, oh9k9, and 33256. editorial changes throughout. 93-03-15 m. a. frye c add class v devices. add z package. editorial changes throughout. 97-04-15 r. monnin d changes in accordance with nor 5962-r368-97. C drw 97-06-23 raymond monnin e change descriptive designator for case outline z from gdfp2-f28 to cdfp3-f28. editorial changes throughout. redrawn. - drw 99-12-30 raymond monnin f sheet 7, table i, v il test, change max limit from C0.8 v to 0.8 v. - drw 00-03-01 raymond monnin g add radiation features and post irradiation limits. - drw 01-05-16 raymond monnin the original first page of this drawing has been replaced rev sheet rev gggggg sheet 15 16 17 18 19 20 rev status rev ggggggggggggg g of sheets sheet 1234567891011121314 pmic n/a prepared by sandra b. rooney defense supply center columbus standard microcircuit drawing checked by charles e. besore columbus, ohio 43216 http://www.d scc.dla.mil this drawing is available for use by all departments approved by michael a. frye microcircuit, linear, microprocessor compatible, 12-bit analog-to-digital and agencies of the department of defense drawing approval date 86-07-10 converters, monolithic silicon amsc n/a revision level g size a cage code 67268 5962-85127 sheet 1 of 20 dscc form 2233 apr 97 5962-e374-01 distribution statement a. approved for public release; distribution is unlimited.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope. this drawing documents two product assurance class levels consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiation hardness assurance (rha) levels are reflected in the pin. 1.2 pin. the pin is as shown in the following examples. for device classes m and q: 5962 - 85127 01 x x federal stock class desi g nator rha desi g nator ( see 1.2.1 ) device type ( see 1.2.2 ) case outline ( see 1.2.4 ) lead finish ( see 1.2.5 ) \ / \/ drawing number for device class v: 5962 - 85127 01 v x x federal stock class desi g nator rha desi g nator ( see 1.2.1 ) device type ( see 1.2.2 ) device class desi g nator case outline ( see 1.2.4 ) lead finish ( see 1.2.5 ) \ / ( see 1.2.3 ) \/ drawing number 1.2.1 rha designator. device classes q and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device types. the device types identify the circuit function as follows: device type generic number circuit function 01 574au monolithic, high performance, 12-bit a/d converter with microprocessor interface 02 574at monolithic, medium performance, 12-bit a/d converter with microprocessor interface 03 574au multi-chip, high performance, 12-bit a/d converter with microprocessor interface 04 574at multi-chip, medium performance, 12-bit a/d converter with microprocessor interface 05 574za monolithic, high performance, low power, 12-bit a/d converter with microprocessor interface 06 574zb monolithic, medium performance, low power, 12-bit a/d converter with microprocessor interface 07 574au monolithic, high performance, low power, 12-bit a/d converter with microprocessor interface 08 574at monolithic, medium performance, low power, 12-bit a/d converter with microprocessor interface
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 3 dscc form 2234 apr 97 1.2.3 device class designator. the device class designator is a single letter identifying the product assurance level as liste d below. since the device class designator has been added after the original issuance of this drawing, device classes m and q designators will not be included in the pin and will not be marked on the device. device class device requirements documentation m vendor self-certification to the requirements for mil-std-883 compliant, non- jan class level b microcircuits in accordance with mil-prf-38535, appendix a q or v certification and qualification to mil-prf-38535 1.2.4 case outlines. the case outlines are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style x gdip1-t28 or cdip2-t28 28 dual-in-line y cqcc1-n44 44 square leadless chip carrier z cdfp3-f28 28 flat pack 3 cqcc1-n28 28 square leadless chip carrier 1.2.5 lead finish. the lead finish is as specified in mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 1.3 absolute maximum ratings. 1 / v cc to digital common .................................................................................................... 0 to +1 6.5 v dc v ee to digital common .................................................................................................... 0 to -1 6.5 v dc v log to digital common .................................................................................................. 0 to +7 v dc analog to digital common: device types 01, 02, 03, 04 ........................................................................................ +1 v dc device types 05, 06, 07, 08 ........................................................................................ -0.5 v dc to +1 v dc control inputs (ce, cs, a o , 12/8, r/c) to digital common............................................. -0.5 v dc to v log +0.5 v dc analog inputs (ref in, bip off, 10 v in ) to analog common........................................ v ee to v cc 20 v in analog input voltage to analog common ............................................................. +24 v dc v ref out .......................................................................................................................... ind efinite short to common, 10 ms short to v cc power dissipation at 75 q c: device types 01, 02, 05, 06, 07, 08 ............................................................................ 1,000 mw 2/ device types 03, 04 .................................................................................................... 2,080 mw 2/ lead temperature (soldering, 10 seconds) .................................................................... +300 q c storage temperature ...................................................................................................... -65 q c to +150 q c thermal resistance, junction-to-ambient ( t ja ): cases x and 3 ............................................................................................................ 70 q c/w case y........................................................................................................................ 38 q c/w case z ........................................................................................................................ 60 q c/w thermal resistance, junction-to-case ( t jc )..................................................................... see mil-std-1835 junction temperature (t j ) .............................................................................................. +175 q c 1/ stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2/ for cases x and 3, derate linearly above t a = +75 q c at 20.8 mw/ q c. for cases y, derate linearly above t a = +75 q c at 22.7 mw/ q c. for cases z, derate linearly above t a = +115 q c at 17 mw/ q c.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 4 dscc form 2234 apr 97 1.4 recommended operating conditions. power supply operating voltage range: positive supply (v log ) ............................................................................................. +4.5 v dc to +5.5 v dc positive supply (v cc ) ............................................................................................... +11.4 v dc to +16.5 v dc negative supply (v ee ).............................................................................................. -11.4 v dc to -16.5 v dc ambient operating temperature range ........................................................................... -55 q c to +125 q c 1.5 radiation features maximum total dose available (dose rate = 50 C 300 rad/s) .......................................... d 100 krads 2. applicable documents 2.1 government specification, standards, and handbooks. the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of these documents are those liste d in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation. specification department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. mil-std-1835 - interface standard electronic component case outlines. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specification, standards, and handbooks are available from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 order of precedence. in the event of a conflict between the text of this drawing and the references cited herein, the tex t of this drawing takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements. the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 5 dscc form 2234 apr 97 3.2 design, construction, and physical dimensions. the design, construction, and physical dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outlines. the case outlines shall be in accordance with 1.2.4 herein. 3.2.2 terminal connections. the terminal connections shall be as specified on figure 1. 3.2.3 truth table. the truth table shall be as specified on figure 2. 3.2.4 block or logic diagrams. the block or logic diagrams shall be as specified on figure 3. 3.2.5 radiation exposure circuit. the radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 electrical performance characteristics and postirradiation parameter limits. unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table i and shall apply over th e full ambient operating temperature range. 3.4 electrical test requirements. the electrical test requirements shall be the subgroups specified in table iia. the electr ical tests for each subgroup are defined in table i. 3.5 marking. the part shall be marked with the pin listed in 1.2 herein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for packages where marking of the entire smd pin number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device classes q and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark. the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance. for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). for device class m, a certifica te of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to dscc-va prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes q and v, the requirements of mil-prf-38535 and herein or for device class m, the requirements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance. a certificate of conformance as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m. for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-prf-38535, appendix a. 3.9 verification and review for device class m. for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offshore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m. device class m devices covered by this drawing shall be in microcircuit group number 81 (see mil-prf-38535, appendix a).
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 6 dscc form 2234 apr 97 table i. electrical performance characteristics. test symbol conditions -55 q c d t a d +125 q c v cc = +15 v, v log = +5 v, v ee = -15 v 1/ group a subgroups device type limits unit unless otherwise specified min max power supply current i log 1, 2, 3 01, 02, 40 ma from v log 03, 04 m, d, l, r 1 02 40 1, 2, 3 05, 06, 07, 08 1 power supply current i cc 1, 2, 3 01, 02 5 ma from v cc m, d, l, r 1 02 5 1, 2, 3 03, 04 15 05, 06, 07, 08 9 power supply current i ee 1, 2, 3 01, 02, -30 ma 03, 04 from v ee m, d, l, r 1 02 -30 1, 2, 3 05, 06, 07, 08 0 resolution 1, 2, 3 all 12 bits integral linearity error ile 1 all -0.5 0.5 lsb 2, 3 -1.0 1.0 m, d, l, r 1 02 -1.0 1.0 differential linearity error (minimum resolution for dle 1 all 12 bits which no missing codes guaranteed) 2/ 2, 3 12 unipolar offset voltage error v io t a = +25 q c 1 all -2.0 2.0 lsb m, d, l, r 1 02 -3.0 3.0 12 01 -1.0 1.0 unipolar offset drift ' v io using internal reference 2, 3 all -1.0 1.0 lsb 2/ ' t bipolar offset voltage error b z t a = +25 q c 1 all -4.0 4.0 lsb m, d, l, r 1 02 -5.0 5.0 12 01 -2.0 2.0 bipolar zero offset drift ' b z using internal reference 2, 3 01, 03, -1.0 1.0 lsb 2/ t 05, 07 02, 04, -2.0 2.0 06, 08 see footnotes at end of table.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 7 dscc form 2234 apr 97 table i. electrical performance characteristics C continued. test symbol conditions -55 q c d t a d +125 q c v cc = +15 v, v log = +5 v, v ee = -15 v 1/ group a subgroups device type limits unit unless otherwise specified min max gain error ' a e t a = +25 q c 1 01, 02 0.25 % of m, d, l, r 1 02 0.35 f.s. with 50 : resistor from 1 03, 04, 0.30 ref out to ref in 05, 06, 07, 08 12 01 0.125 gain error drift ' a e using internal reference 2, 3 01, 03, -12.5 12.5 ppm/ q c 2/ ' t 05, 07 02, 04, -25.0 25.0 06, 08 power supply sensitivity +p ss1 +13.5 v < v cc < +16.5 v 1 all -1.0 1.0 lsb (maximum change in t a = +25 q c full scale calibration) +p ss2 +11.4 v < v cc < +12.6 v 2/ t a = +25 q c +p ss3 +4.5 v < v log < +5.5 v 1 all -0.5 0.5 t a = +25 q c -p ss1 -16.5 v < v ee < -13.5 v 1 all -1.0 1.0 t a = +25 q c -p ss2 -12.6 v < v ee < -11.4 v t a = +25 q c input impedance z in 10 v span, t a = +25 q c 4all37 k : 2/ 20 v span, t a = +25 q c 4 01, 02, 6 14 03, 04 05, 06, 15 25 07, 08 internal reference voltage v ref t a = +25 q c 3/ 1 01, 02 9.98 10.02 v m, d, l, r 1 02 9.95 10.05 1 03, 04 9.90 10.10 07, 08 05, 06 9.97 10.03 12 01 9.99 10.01 output current i o available for external loads 1 01, 02, 1.5 ma 2/, 4 / t a = +25 q c 03, 04 05, 06, 2.0 07, 08 see footnotes at end of table.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 8 dscc form 2234 apr 97 table i. electrical performance characteristics C continued. test symbol conditions -55 q c d t a d +125 q c v cc = +15 v, v log = +5 v, v ee = -15 v 1/ group a subgroups device type limits unit unless otherwise specified min max in put voltage (ce, cs, 12/8, v ih logic 1, t a = +25 q c 1 01, 02, 2.0 5.5 v r/c, a o ) 05, 06, 2/, 5 / 07, 08 03, 04 2.4 5.5 v il logic 0, t a = +25 q c1all-0.50.8 input current i in t a = +25 q c 1 01, 02, -20 +20 p a 2/ 03, 04, 07, 08 05,06 -1 1 output voltage v ol logic 0, t a = +25 q c, 1 all 0.4 v (db11-db0, sts) 2/ i sink = +1.6 ma output voltage v oh logic 1, t a = +25 q c, 1 all 2.4 v (db11-db0) 2/ i source = +500 p a1 high impedance state i z high-z state, t a = +25 q c, 1 01, 02, -20 +20 p a output current 2/ db11 C db0 only 03, 04, 07, 08 05, 06 -5 +5 functional tests see 4.4.1b, t a = +25 q c 7all see figure 4 9, 10, 11 01, 02 250 ns low r/c pulse width t hrl 03, 04 350 2/, 6 / 05, 06, 50 07, 08 see figure 4 9, 10, 11 01, 02, 600 ns sts delay from r/c t ds 03, 04 2/, 6 / 05, 06, 200 07, 08 see figure 4 9, 10, 11 01, 02, 25 ns data valid after r/c low t hdr 05, 06, 2/, 6 / 07, 08 03, 04 15 see figure 4 9, 10, 11 01, 02, 300 1000 ns sts delay after valid data t hs 05, 06, 2/, 6 / 07, 08 03, 04 300 1200 see figure 4 9, 10, 11 01, 02, 300 ns high r/c pulse width t hrh 03, 04 2/, 7 / 05, 06, 150 07, 08 see footnotes at end of table.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 9 dscc form 2234 apr 97 table i. electrical performance characteristics C continued. test symbol conditions -55 q c d t a d +125 q c v cc = +15 v, v log = +5 v, v ee = -15 v 1/ group a subgroups device type limits unit unless otherwise specified min max data access time t ddr see figure 4 9, 10, 11 01, 02, 250 ns 2/, 7 / 03, 04 05, 06, 150 07, 08 sts delay from ce t dsc see figure 4 9, 10, 11 01, 02, 350 ns 2/, 7 / 03, 04 05, 06, 200 07, 08 ce pulse width t hec see figure 5 9, 10, 11 01, 02, 300 ns 2/, 7 / 03, 04 05, 06, 50 07, 08 conversion time t c 8-bit cycle 9, 10, 11 01,02 4/ 10 24 p s 2/, 8 / see figure 5 03, 04, 10 17 05, 06, 07, 08 12-bit cycle 9, 10, 11 01,02 4/ 15 35 see figure 5 03, 04, 15 25 05, 06, 07, 08 access time (from ce) t dd see figure 6 9, 10, 11 01, 02 200 ns 2/, 6 / 03, 04 250 05, 06, 150 07, 08 data valid after ce low t hd see figure 6 9, 10, 11 01, 02, 25 ns 2/, 6 / 05, 06, 07, 08 03, 04 15 output float delay t hl see figure 6 9, 10, 11 01, 02 100 ns 2/, 6 / 03, 04, 150 05, 06, 07, 08 1/ devices supplied to this drawing have been characterized through all levels m, d, l, and r of irradiation. however, this device is only tested at the r level. pre and post irradiation values are identical unless otherwise specified in table i. when performing post irradiation electrical measurements for any rha level, t a = +25 q c. 2/ this parameter is not tested post irradiation. 3/ the reference voltage external load current shall be a constant dc and shall not exceed 1.5 ma. 4/ reference should be buffered for operation on + 12 v supplies. external load should not change during conversion. 5/ for devices 01 and 02, 12/8 is not ttl compatible and must be hard wired to v log or digital ground. 6/ subgroups 10 and 11, if not tested, shall be guaranteed to the specified limits. 7/ parameters t hrh , t ddr , t dsc , and t hec , if not tested, shall be guaranteed to the specified limits. 8/ for devices 03 and 04, time measured from 50 percent level of digital transitions, tested with 50 pf and 3.0 k : load.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 10 dscc form 2234 apr 97 device types all 01, 02 01, 02, 05, 06, 07, 08 03, 04 case outlines x z 3 y terminal number terminal symbol terminal symbol 1 v log v log 2 12/8 12/8 3cs cs 4aoao 5r/cnc 6cenc 7v cc nc 8 ref out nc 9 agnd r/c 10 ref in ce 11 v ee v cc 12 bip off ref out 13 10 v in agnd 14 20 v in ref in 15 dgnd v ee 16 db0 nc 17 db1 bip off 18 db2 10 v in 19 db3 20 v in 20 db4 nc 21 db5 nc 22 db6 nc 23 db7 nc 24 db8 dgnd 25 db9 nc 26 db10 nc 27 db11 (msb) db0 28 sts db1 29 db2 30 nc 31 db3 32 db4 33 db5 34 db6 35 db7 36 db8 37 db9 38 nc 39 nc 40 nc 41 nc 42 db10 43 db11 (msb) 44 sts figure 1. terminal connections.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 11 dscc form 2234 apr 97 ce cs r/c 12/8 a o operation 0 x x x x none x 1 x x x none 1 0 0 x 0 initiate 12-bit conversion 1 0 0 x 1 initiate 8-bit conversion 1 0 1 1 x enable 12-bit parallel output 1 0 1 0 0 enable 8 most significant bits 1 0 1 0 1 enable 4 lsbs + 4 trailing zeros figure 2. truth table.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 12 dscc form 2234 apr 97 device types 01, 02, 03, and 04 note: for device types 03 and 04, the resistor value is 9.95 k : . figure 3. block diagram.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 13 dscc form 2234 apr 97 device types 05, 06, 07, and 08 figure 3. block diagram - continued.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 14 dscc form 2234 apr 97 b o figure 4. high/low pulse for r/c outputs.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 15 dscc form 2234 apr 97 figure 5. convert start diagram.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 16 dscc form 2234 apr 97 figure 6. read cycle timing.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 17 dscc form 2234 apr 97 4. quality assurance provisions 4.1 sampling and inspection. for device classes q and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening. for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 additional criteria for device class m. a. burn-in test, method 1015 of mil-std-883. (1) test condition a, b, c or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) t a = +125 q c, minimum. b. interim and final electrical test parameters shall be as specified in table iia herein. c. optional subgroup 12, for device 01, is used for grading the part selection at 25 q c. 4.2.2 additional criteria for device classes q and v. a. the burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the burn-in test circuit shall be maintained under document revision level control of the device manufacturer's technology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil-std-883. b. interim and final electrical test parameters shall be as specified in table iia herein. c. additional screening for device class v beyond the requirements of device class q shall be as specified in mil-prf-38535, appendix b. 4.3 qualification inspection for device classes q and v. qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be performed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4).
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 18 dscc form 2234 apr 97 table iia. electrical test requirements. test requirements subgroups (in accordance with mil-std-883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) device class m device class q device class v interim electrical parameters (see 4.2) 111 final electrical parameters (see 4.2) 1/ 1, 2, 3, 4, 12 1/ 1, 2, 3, 4, 12 1/, 2 / 1, 2, 3, 4, 12 group a test requirements (see 4.4) 1, 2, 3, 4, 7, 9, 10, 11, 12 1, 2, 3, 4, 7, 9, 10, 11, 12 1, 2, 3, 4, 7, 9, 10, 11, 12 group c end-point electrical parameters (see 4.4) 1, 4 1, 4 2/ 1, 4 group d end-point electrical parameters (see 4.4) 1, 4 1, 4 1, 4 group e end-point electrical parameters (see 4.4) - - - - - - 1 1/ pda applies to subgroup 1. 2/ delta limits as specified in table iib shall be required where specified, and the delta limits shall be computed with reference to the previous interim electrical parameters. table iib. 240 hour burn-in and group c end-point electrical parameters. endpoint limits test title min max delta limits units uni vio -1 2 +0.5 lsb bpze -5.5 4.5 +1 lsb ae -0.35 0.35 +.10 %fsr 4.4 conformance inspection. technology conformance inspection for classes q and v shall be in accordance with mil-prf-38535 including groups a, b, c, d, and e inspections and as specified. quality conformance inspection for device class m shall be in accordance with mil-prf-38535, appendix a and as specified herein. inspections to be performed for device class m shall be those specified in method 5005 of mil-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4.1 group a inspection. a. tests shall be as specified in table iia herein. b. for device class m, subgroups 7 tests shall be sufficient to verify the truth table. for device classes q and v, subgroups 7 shall include verifying the functionality of the device. c. subgroups 5, 6, and 8 in table i, method 5005 of mil-std-883 shall be omitted. d. optional subgroup 12, for device type 01, is used for grading the part selection at 25 q c.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 19 dscc form 2234 apr 97 4.4.2 group c inspection. the group c inspection end-point electrical parameters shall be as specified in table iia herein. 4.4.2.1 additional criteria for device class m. steady-state life test conditions, method 1005 of mil-std-883: a. test condition a, b, c or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. b. t a = +125 q c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil-std-883. 4.4.2.2 additional criteria for device classes q and v. the steady-state life test duration, test condition and test temperat ure, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the test circuit shall be maintained under document revision level control by the device manufacturer's trb in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. 4.4.3 group d inspection. the group d inspection end-point electrical parameters shall be as specified in table iia herein. 4.4.4 group e inspection. group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. end-point electrical parameters shall be as specified in table iia herein. b. for device classes q and v, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in mil-prf-38535 for the rha level being tested. for device class m, the devices shall be subjected to radiation hardness assured tests as specified in mil-prf-38535, appendix a for the rha level being tested. all device classes must meet the postirradiation end-point electrical parameter limits as defined in table i at t a = +25 q c r 5 q c, after exposure, to the subgroups specified in table iia herein. c. when specified in the purchase order or contract, a copy of the rha delta limits shall be supplied. 5. packaging 5.1 packaging requirements. the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m.
standard microcircuit drawing size a 5962-85127 defense supply center columbus columbus, ohio 43216-5000 revision level g sheet 20 dscc form 2234 apr 97 6. notes 6.1 intended use. microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 replaceability. microcircuits covered by this drawing will replace the same generic device covered by a contractor- prepared specification or drawing. 6.2 configuration control of smd's. all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users. military and industrial users should inform defense supply center columbus when a system application requires configuration control and which smd's are applicable to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) should contact dscc-va, telephone (614) 692-0525. 6.4 comments. comments on this drawing should be directed to dscc-va, columbus, ohio 43216-5000, or telephone (614) 692-0547. 6.5 abbreviations, symbols, and definitions. the abbreviations, symbols, and definitions used herein are defined in mil-prf-38535 and mil-hdbk-1331. v log logic supply 12/8 data mode select input cs chip select input a0 byte address/short cycle input r/c read/convert input ce chip enable input v cc positive power supply ref out reference output agnd analog ground ref in reference input v ee negative power supply bip off bipolar offset input v in span input dgnd digital ground d0-d11 tree-state data outputs sts status output nc no connection 6.6 sources of supply. 6.6.1 sources of supply for device classes q and v. sources of supply for device classes q and v are listed in qml-38535. the vendors listed in qml-38535 have submitted a certificate of compliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m. approved sources of supply for class m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va.
standard microcircuit drawing bulletin date: 01-05-16 approved sources of supply for smd 5962-85127 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by dscc-va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml-38535. standard microcircuit drawing pin 1/ vendor cage number vendor similar pin 2/ 5962-85127013a 24355 ad574aue/883b 24355 ad574aud/883b 5962-8512701xa 1es66 mx574auq/883b 5962-8512701xc 1es66 mx574aud/883b 5962-8512701vxa 24355 ad574aud/qmlv 5962-8512701vza 24355 ad574auf/qmlv 24355 ad574ate/883b 5962-85127023a 1es66 mx574ate/883b 24355 ad574atd/883b 5962-8512702xa 1es66 mx574atq/883b 5962-8512702xc 1es66 mx574atd/883b 5962-8512702vxa 24355 ad574atd/qmlv 5962-8512702vza 24355 ad574atf/qmlv 5962r8512702vxa 24355 ad574atd/qmlr 5962r8512702vza 24355 ad574atf/qmlr 5962-8512703xa 34371 hi1-574aud/883 5962-8512703ya 34371 hi4-574aue/883 5962-8512704xa 34371 hi1-574atd/883 5962-8512704ya 34371 hi4-574ate/883 5962-85127053a 3/ hadc574zamc/883 5962-8512705xc 3/ hadc574zamj/883 5962-85127063a 3/ hadc574zbmc/883 5962-8512706xc 3/ hadc574zbmj/883 5962-85127073c 3/ hs574au/b-lcc 5962-8512707xc 3/ hs574au/b 5962-85127083c 3/ hs574at/b-lcc 5962-8512708xc 3/ hs574at/b 1/ the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed contact the vendor to determine its availability. 2/ caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. 3/ not available from an approved source. sheet 1 of 2
standard microcircuit drawing bulletin - continued vendor cage vendor name number and address 24355 analog devices incorporated route 1 industrial park po box 9106 norwood, ma 02062-9106 point of contact: 1500 space park drive po box 58020 santa clara, ca 95050-8020 1es66 maxim integrated products 120 san gabriel drive sunnyvale, ca 94086-5126 34371 intersil corporation 2401 palm bay blvd po box 883 melbourne, fl 32902-0883 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin.

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